DE69521386T2 - Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens - Google Patents
Herstellung eines Elektronenemitters mittels eines AbdruckverfahrensInfo
- Publication number
- DE69521386T2 DE69521386T2 DE69521386T DE69521386T DE69521386T2 DE 69521386 T2 DE69521386 T2 DE 69521386T2 DE 69521386 T DE69521386 T DE 69521386T DE 69521386 T DE69521386 T DE 69521386T DE 69521386 T2 DE69521386 T2 DE 69521386T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- electron emitter
- impression process
- impression
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30457—Diamond
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27175494 | 1994-10-11 | ||
JP27175594 | 1994-10-11 | ||
JP27175694 | 1994-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69521386D1 DE69521386D1 (de) | 2001-07-26 |
DE69521386T2 true DE69521386T2 (de) | 2002-05-29 |
Family
ID=27335946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69521386T Expired - Fee Related DE69521386T2 (de) | 1994-10-11 | 1995-10-11 | Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens |
Country Status (3)
Country | Link |
---|---|
US (1) | US5795208A (de) |
EP (1) | EP0707333B1 (de) |
DE (1) | DE69521386T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7808694B2 (en) * | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7852545B2 (en) | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US5599749A (en) * | 1994-10-21 | 1997-02-04 | Yamaha Corporation | Manufacture of micro electron emitter |
US7898722B2 (en) * | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
US5971825A (en) * | 1996-04-03 | 1999-10-26 | Yamaha Corporation | Fabrication of field emission element with sharp emitter tip |
US5928048A (en) * | 1996-10-29 | 1999-07-27 | Yamaha Corporation | Manufacture of field emission element with sharp emitter tip |
US7929197B2 (en) * | 1996-11-05 | 2011-04-19 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7830588B2 (en) * | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
TW392197B (en) * | 1997-07-31 | 2000-06-01 | Yamaha Corp | Method for manufacturing field emission device |
JPH1186719A (ja) * | 1997-09-05 | 1999-03-30 | Yamaha Corp | 電界放射型素子の製造方法 |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
KR100703140B1 (ko) * | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
JPH11306957A (ja) * | 1998-04-15 | 1999-11-05 | Yamaha Corp | 電界放射型素子の製造方法 |
JP2000011859A (ja) * | 1998-06-22 | 2000-01-14 | Yamaha Corp | 電界放射型素子の製造方法 |
JP2000011858A (ja) | 1998-06-22 | 2000-01-14 | Yamaha Corp | 電界放射型素子の製造方法 |
US6083069A (en) * | 1998-07-01 | 2000-07-04 | Taiwan Semiconductor Manufacturing Company | Method of making a micro vacuum tube with a molded emitter tip |
JP2000182512A (ja) * | 1998-12-14 | 2000-06-30 | Yamaha Corp | 電界放射型素子及びその製造方法 |
US6420822B1 (en) * | 1999-07-15 | 2002-07-16 | Northrop Grumman Corporation | Thermionic electron emitter based upon the triple-junction effect |
JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
US20040018729A1 (en) * | 2002-02-11 | 2004-01-29 | Ghoshal Uttam Shyamalindu | Enhanced interface thermoelectric coolers with all-metal tips |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7476327B2 (en) * | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US20060151777A1 (en) * | 2005-01-12 | 2006-07-13 | Naberhuis Steven L | Multi-layer thin film in a ballistic electron emitter |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7684106B2 (en) * | 2006-11-02 | 2010-03-23 | Qualcomm Mems Technologies, Inc. | Compatible MEMS switch architecture |
EP2104948A2 (de) * | 2007-02-20 | 2009-09-30 | Qualcomm Mems Technologies, Inc. | Ausrüstung und verfahren zur mems-ätzung |
WO2009036215A2 (en) * | 2007-09-14 | 2009-03-19 | Qualcomm Mems Technologies, Inc. | Etching processes used in mems production |
KR20130100232A (ko) | 2010-04-09 | 2013-09-10 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 전기 기계 디바이스의 기계층 및 그 형성 방법 |
US9134527B2 (en) | 2011-04-04 | 2015-09-15 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
US8963159B2 (en) | 2011-04-04 | 2015-02-24 | Qualcomm Mems Technologies, Inc. | Pixel via and methods of forming the same |
ITMI20130897A1 (it) * | 2013-05-31 | 2014-12-01 | St Microelectronics Srl | Dispositivo microelettronico a vuoto integrato e relativo metodo di fabbricazione. |
US9053890B2 (en) | 2013-08-02 | 2015-06-09 | University Health Network | Nanostructure field emission cathode structure and method for making |
CN204905205U (zh) | 2014-03-31 | 2015-12-23 | 意法半导体股份有限公司 | 集成真空微电子结构 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4962414A (en) * | 1988-02-11 | 1990-10-09 | Sgs-Thomson Microelectronics, Inc. | Method for forming a contact VIA |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US5038070A (en) * | 1989-12-26 | 1991-08-06 | Hughes Aircraft Company | Field emitter structure and fabrication process |
JP2918637B2 (ja) * | 1990-06-27 | 1999-07-12 | 三菱電機株式会社 | 微小真空管及びその製造方法 |
US5141459A (en) * | 1990-07-18 | 1992-08-25 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
DE69030589T2 (de) * | 1990-07-18 | 1997-11-13 | Ibm | Struktur und verfahren für feldemissionskathodenherstellung |
DE69027611T2 (de) * | 1990-07-18 | 1997-01-23 | Ibm | Herstellungsverfahren und struktur einer integrierten vakuum-mikroelektronischen vorrichtung |
US5203731A (en) * | 1990-07-18 | 1993-04-20 | International Business Machines Corporation | Process and structure of an integrated vacuum microelectronic device |
US5334908A (en) * | 1990-07-18 | 1994-08-02 | International Business Machines Corporation | Structures and processes for fabricating field emission cathode tips using secondary cusp |
KR920015542A (ko) * | 1991-01-14 | 1992-08-27 | 김광호 | 반도체장치의 다층배선형성법 |
JPH05174703A (ja) * | 1991-02-27 | 1993-07-13 | Nippon Steel Corp | 電界放出型素子とその製造方法 |
US5358909A (en) * | 1991-02-27 | 1994-10-25 | Nippon Steel Corporation | Method of manufacturing field-emitter |
US5100355A (en) * | 1991-06-28 | 1992-03-31 | Bell Communications Research, Inc. | Microminiature tapered all-metal structures |
US5285017A (en) * | 1991-12-31 | 1994-02-08 | Intel Corporation | Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias |
JPH05225895A (ja) * | 1992-02-14 | 1993-09-03 | Mitsubishi Electric Corp | 電界放出陰極の作製方法 |
KR930020669A (ko) * | 1992-03-04 | 1993-10-20 | 김광호 | 고집적 반도체장치 및 그 제조방법 |
JP3253683B2 (ja) * | 1992-07-14 | 2002-02-04 | 株式会社東芝 | 電界放出型冷陰極板の製造方法 |
JP3231528B2 (ja) * | 1993-08-17 | 2001-11-26 | 株式会社東芝 | 電界放出型冷陰極およびその製造方法 |
JP3022689B2 (ja) * | 1992-08-31 | 2000-03-21 | 日本電気株式会社 | バイポーラトランジスタの製造方法 |
US5262352A (en) * | 1992-08-31 | 1993-11-16 | Motorola, Inc. | Method for forming an interconnection structure for conductive layers |
-
1995
- 1995-10-06 US US08/540,418 patent/US5795208A/en not_active Expired - Fee Related
- 1995-10-11 DE DE69521386T patent/DE69521386T2/de not_active Expired - Fee Related
- 1995-10-11 EP EP95116042A patent/EP0707333B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0707333A1 (de) | 1996-04-17 |
US5795208A (en) | 1998-08-18 |
DE69521386D1 (de) | 2001-07-26 |
EP0707333B1 (de) | 2001-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69521386D1 (de) | Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens | |
DE59504520D1 (de) | Herstellung eines aluminidhaltigen keramischen formkörpers | |
DE69525809D1 (de) | Herstellung eines Mikro-Elektronenemitters | |
DE68923727T2 (de) | Verfahren zur Herstellung eines aktiven Matrixsubstrats. | |
DE69132355D1 (de) | Verfahren zur Herstellung eines länglichen Glaskörpers | |
NO176823C (no) | Fremgangsmåte for fremstilling av fermentert soyasaus | |
DE69525922T2 (de) | Herstellung eines elektrischen Bauteils | |
DE69716767D1 (de) | Verfahren zur herstellung von tolterodin | |
DE69626911D1 (de) | Verfahren zur Herstellung eines Aluminatleuchtstoffs | |
DE68924475T2 (de) | Verfahren zur Herstellung eines Polyvinylalkoholgels und Bildphantoms mittels magnetischer Resonanz. | |
DE69525484T2 (de) | Verfahren zur Herstellung eines Isolieraufbaus | |
DE59500130D1 (de) | Verfahren zur Herstellung von ether- und halogenidfreiem Aluminiumwasserstoff | |
DE69716993D1 (de) | Verfahren zur Herstellung eines ultraweichen Tissuepapiers mit hohem Grundgewicht | |
DE69601594T2 (de) | Verfahren zur Herstellung eines keramischen Körpers mit kleinen durchgehenden Löchern | |
DE69603636D1 (de) | Verfahren zur Herstellung eines Hohlkörpers | |
DE69102380D1 (de) | Verfahren zur Herstellung eines Elektrodenmusters. | |
DE69701915D1 (de) | Verfahren zur Herstellung eines einbügelbaren Einlagestoffs | |
DE68916396D1 (de) | Verfahren zur Herstellung eines Carbonsäurealkenylesters. | |
DE69408720D1 (de) | Verfahren zur Herstellung eines cyclischen Ketons | |
DE59508299D1 (de) | Verfahren zur Herstellung eines Färbereihilfsmittels | |
DE69406004D1 (de) | Verfahren zur Herstellung eines verbesserten Bilds | |
DE69333060T2 (de) | Methoden zur herstellung praktisch reiner eg iii zellulase mittels alkohol | |
DE69227490D1 (de) | Verfahren zur Herstellung aktiver Kohlenstoffasern | |
DE69017570T2 (de) | Verfahren zur Herstellung eines Lactons. | |
DE59811573D1 (de) | Verbessertes Verfahren zur Herstellung von ungesättigten cyclischen Ethern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |