DE69521386D1 - Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens - Google Patents

Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens

Info

Publication number
DE69521386D1
DE69521386D1 DE69521386T DE69521386T DE69521386D1 DE 69521386 D1 DE69521386 D1 DE 69521386D1 DE 69521386 T DE69521386 T DE 69521386T DE 69521386 T DE69521386 T DE 69521386T DE 69521386 D1 DE69521386 D1 DE 69521386D1
Authority
DE
Germany
Prior art keywords
production
electron emitter
impression process
impression
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69521386T
Other languages
English (en)
Other versions
DE69521386T2 (de
Inventor
Atsuo Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Application granted granted Critical
Publication of DE69521386D1 publication Critical patent/DE69521386D1/de
Publication of DE69521386T2 publication Critical patent/DE69521386T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69521386T 1994-10-11 1995-10-11 Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens Expired - Fee Related DE69521386T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27175694 1994-10-11
JP27175594 1994-10-11
JP27175494 1994-10-11

Publications (2)

Publication Number Publication Date
DE69521386D1 true DE69521386D1 (de) 2001-07-26
DE69521386T2 DE69521386T2 (de) 2002-05-29

Family

ID=27335946

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521386T Expired - Fee Related DE69521386T2 (de) 1994-10-11 1995-10-11 Herstellung eines Elektronenemitters mittels eines Abdruckverfahrens

Country Status (3)

Country Link
US (1) US5795208A (de)
EP (1) EP0707333B1 (de)
DE (1) DE69521386T2 (de)

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US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7808694B2 (en) * 1994-05-05 2010-10-05 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7852545B2 (en) 1994-05-05 2010-12-14 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US5599749A (en) * 1994-10-21 1997-02-04 Yamaha Corporation Manufacture of micro electron emitter
US7898722B2 (en) * 1995-05-01 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical device with restoring electrode
US5971825A (en) * 1996-04-03 1999-10-26 Yamaha Corporation Fabrication of field emission element with sharp emitter tip
US5928048A (en) * 1996-10-29 1999-07-27 Yamaha Corporation Manufacture of field emission element with sharp emitter tip
US7929197B2 (en) * 1996-11-05 2011-04-19 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7830588B2 (en) * 1996-12-19 2010-11-09 Qualcomm Mems Technologies, Inc. Method of making a light modulating display device and associated transistor circuitry and structures thereof
TW392197B (en) * 1997-07-31 2000-06-01 Yamaha Corp Method for manufacturing field emission device
JPH1186719A (ja) * 1997-09-05 1999-03-30 Yamaha Corp 電界放射型素子の製造方法
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
WO1999052006A2 (en) * 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
JPH11306957A (ja) * 1998-04-15 1999-11-05 Yamaha Corp 電界放射型素子の製造方法
JP2000011858A (ja) 1998-06-22 2000-01-14 Yamaha Corp 電界放射型素子の製造方法
JP2000011859A (ja) * 1998-06-22 2000-01-14 Yamaha Corp 電界放射型素子の製造方法
US6083069A (en) * 1998-07-01 2000-07-04 Taiwan Semiconductor Manufacturing Company Method of making a micro vacuum tube with a molded emitter tip
JP2000182512A (ja) * 1998-12-14 2000-06-30 Yamaha Corp 電界放射型素子及びその製造方法
US6420822B1 (en) * 1999-07-15 2002-07-16 Northrop Grumman Corporation Thermionic electron emitter based upon the triple-junction effect
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US20040018729A1 (en) * 2002-02-11 2004-01-29 Ghoshal Uttam Shyamalindu Enhanced interface thermoelectric coolers with all-metal tips
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US7476327B2 (en) * 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
US20060151777A1 (en) * 2005-01-12 2006-07-13 Naberhuis Steven L Multi-layer thin film in a ballistic electron emitter
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7527998B2 (en) * 2006-06-30 2009-05-05 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US7684106B2 (en) * 2006-11-02 2010-03-23 Qualcomm Mems Technologies, Inc. Compatible MEMS switch architecture
KR20090125087A (ko) * 2007-02-20 2009-12-03 퀄컴 엠이엠스 테크놀로지스, 인크. 마이크로전자기계 시스템〔ｍｅｍｓ〕의 에칭장치 및 에칭 방법
CN101802985A (zh) * 2007-09-14 2010-08-11 高通Mems科技公司 用于微机电系统生产的蚀刻工艺
CN102834761A (zh) 2010-04-09 2012-12-19 高通Mems科技公司 机电装置的机械层及其形成方法
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
ITMI20130897A1 (it) * 2013-05-31 2014-12-01 St Microelectronics Srl Dispositivo microelettronico a vuoto integrato e relativo metodo di fabbricazione.
US9053890B2 (en) 2013-08-02 2015-06-09 University Health Network Nanostructure field emission cathode structure and method for making
CN107275171B (zh) 2014-03-31 2019-05-03 意法半导体股份有限公司 集成真空微电子结构及其制造方法

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US4962414A (en) * 1988-02-11 1990-10-09 Sgs-Thomson Microelectronics, Inc. Method for forming a contact VIA
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5038070A (en) * 1989-12-26 1991-08-06 Hughes Aircraft Company Field emitter structure and fabrication process
JP2918637B2 (ja) * 1990-06-27 1999-07-12 三菱電機株式会社 微小真空管及びその製造方法
US5141459A (en) * 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
JPH0799666B2 (ja) * 1990-07-18 1995-10-25 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 集積真空超小型電子素子の製造方法及びその構造
DK0539365T3 (da) * 1990-07-18 1997-10-27 Ibm Strukturer og fremgangsmåder til fremstilling af feltemissionskatoder.
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5334908A (en) * 1990-07-18 1994-08-02 International Business Machines Corporation Structures and processes for fabricating field emission cathode tips using secondary cusp
KR920015542A (ko) * 1991-01-14 1992-08-27 김광호 반도체장치의 다층배선형성법
JPH05174703A (ja) * 1991-02-27 1993-07-13 Nippon Steel Corp 電界放出型素子とその製造方法
US5358909A (en) * 1991-02-27 1994-10-25 Nippon Steel Corporation Method of manufacturing field-emitter
US5100355A (en) * 1991-06-28 1992-03-31 Bell Communications Research, Inc. Microminiature tapered all-metal structures
US5285017A (en) * 1991-12-31 1994-02-08 Intel Corporation Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias
JPH05225895A (ja) * 1992-02-14 1993-09-03 Mitsubishi Electric Corp 電界放出陰極の作製方法
KR930020669A (ko) * 1992-03-04 1993-10-20 김광호 고집적 반도체장치 및 그 제조방법
JP3253683B2 (ja) * 1992-07-14 2002-02-04 株式会社東芝 電界放出型冷陰極板の製造方法
JP3231528B2 (ja) * 1993-08-17 2001-11-26 株式会社東芝 電界放出型冷陰極およびその製造方法
JP3022689B2 (ja) * 1992-08-31 2000-03-21 日本電気株式会社 バイポーラトランジスタの製造方法
US5262352A (en) * 1992-08-31 1993-11-16 Motorola, Inc. Method for forming an interconnection structure for conductive layers

Also Published As

Publication number Publication date
DE69521386T2 (de) 2002-05-29
EP0707333B1 (de) 2001-06-20
EP0707333A1 (de) 1996-04-17
US5795208A (en) 1998-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee