DE69518787T2 - Statischer Induktionsthyristor und dessen Herstellungsverfahren - Google Patents

Statischer Induktionsthyristor und dessen Herstellungsverfahren

Info

Publication number
DE69518787T2
DE69518787T2 DE69518787T DE69518787T DE69518787T2 DE 69518787 T2 DE69518787 T2 DE 69518787T2 DE 69518787 T DE69518787 T DE 69518787T DE 69518787 T DE69518787 T DE 69518787T DE 69518787 T2 DE69518787 T2 DE 69518787T2
Authority
DE
Germany
Prior art keywords
manufacturing process
static induction
induction thyristor
thyristor
static
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69518787T
Other languages
English (en)
Other versions
DE69518787D1 (de
Inventor
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE69518787D1 publication Critical patent/DE69518787D1/de
Application granted granted Critical
Publication of DE69518787T2 publication Critical patent/DE69518787T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
DE69518787T 1994-04-28 1995-04-28 Statischer Induktionsthyristor und dessen Herstellungsverfahren Expired - Fee Related DE69518787T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9247894 1994-04-28

Publications (2)

Publication Number Publication Date
DE69518787D1 DE69518787D1 (de) 2000-10-19
DE69518787T2 true DE69518787T2 (de) 2001-03-22

Family

ID=14055423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69518787T Expired - Fee Related DE69518787T2 (de) 1994-04-28 1995-04-28 Statischer Induktionsthyristor und dessen Herstellungsverfahren

Country Status (3)

Country Link
US (2) US5648665A (de)
EP (1) EP0680093B1 (de)
DE (1) DE69518787T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法
US5648665A (en) * 1994-04-28 1997-07-15 Ngk Insulators, Ltd. Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
JPH0855978A (ja) * 1994-06-09 1996-02-27 Ngk Insulators Ltd 半導体装置およびその製造方法
JP3277075B2 (ja) * 1994-09-07 2002-04-22 日本碍子株式会社 半導体装置およびその製造方法
US6143583A (en) 1998-06-08 2000-11-07 Honeywell, Inc. Dissolved wafer fabrication process and associated microelectromechanical device having a support substrate with spacing mesas
TW447046B (en) * 2000-04-19 2001-07-21 United Microelectronics Corp CMOS sensing area structure having surrounding silicon oxide and method for manufacturing the same
JP3957038B2 (ja) * 2000-11-28 2007-08-08 シャープ株式会社 半導体基板及びその作製方法
US6746890B2 (en) * 2002-07-17 2004-06-08 Tini Alloy Company Three dimensional thin film devices and methods of fabrication
US7040323B1 (en) * 2002-08-08 2006-05-09 Tini Alloy Company Thin film intrauterine device
US7422403B1 (en) 2003-10-23 2008-09-09 Tini Alloy Company Non-explosive releasable coupling device
US7632361B2 (en) * 2004-05-06 2009-12-15 Tini Alloy Company Single crystal shape memory alloy devices and methods
US7763342B2 (en) * 2005-03-31 2010-07-27 Tini Alloy Company Tear-resistant thin film methods of fabrication
US7441888B1 (en) 2005-05-09 2008-10-28 Tini Alloy Company Eyeglass frame
US7629209B2 (en) * 2005-10-17 2009-12-08 Chunghwa Picture Tubes, Ltd. Methods for fabricating polysilicon film and thin film transistors
US8349099B1 (en) 2006-12-01 2013-01-08 Ormco Corporation Method of alloying reactive components
WO2008092028A1 (en) 2007-01-25 2008-07-31 Tini Alloy Company Frangible shape memory alloy fire sprinkler valve actuator
US8584767B2 (en) 2007-01-25 2013-11-19 Tini Alloy Company Sprinkler valve with active actuation
US8007674B2 (en) 2007-07-30 2011-08-30 Tini Alloy Company Method and devices for preventing restenosis in cardiovascular stents
US8556969B2 (en) 2007-11-30 2013-10-15 Ormco Corporation Biocompatible copper-based single-crystal shape memory alloys
US7842143B2 (en) 2007-12-03 2010-11-30 Tini Alloy Company Hyperelastic shape setting devices and fabrication methods
US8382917B2 (en) 2007-12-03 2013-02-26 Ormco Corporation Hyperelastic shape setting devices and fabrication methods
JP5305731B2 (ja) * 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の閾値電圧の制御方法
US11040230B2 (en) 2012-08-31 2021-06-22 Tini Alloy Company Fire sprinkler valve actuator
US10124197B2 (en) 2012-08-31 2018-11-13 TiNi Allot Company Fire sprinkler valve actuator

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926741C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekt-Transistor und Verfahren zu seiner Herstellung
JPS579226A (en) * 1980-06-19 1982-01-18 Ricoh Kk Safety device for capacitor
US4528745A (en) * 1982-07-13 1985-07-16 Toyo Denki Seizo Kabushiki Kaisha Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
JPS5917547A (ja) * 1982-07-20 1984-01-28 Shimadzu Corp Ｘ線透視撮影台
JPS605064A (ja) * 1983-06-20 1985-01-11 株式会社東芝 窒化系セラミツクス成形用バインダ
DE3617977A1 (de) * 1985-12-05 1987-06-11 Bayer Ag 5-dichloracetamido-4-nitro-1-aryl-pyrazole
CH670333A5 (de) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
JPH07109882B2 (ja) * 1988-02-26 1995-11-22 三菱電機株式会社 バイポーラ型半導体スイッチング装置
JPS6426187A (en) * 1988-07-08 1989-01-27 Hitachi Ltd Core structure of nuclear reactor
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
US5352909A (en) * 1991-12-19 1994-10-04 Nec Corporation Field effect transistor and method for manufacturing the same
JP2811526B2 (ja) * 1993-04-19 1998-10-15 東洋電機製造株式会社 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法
US5648665A (en) * 1994-04-28 1997-07-15 Ngk Insulators, Ltd. Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
US5424231A (en) * 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor

Also Published As

Publication number Publication date
US5648665A (en) 1997-07-15
DE69518787D1 (de) 2000-10-19
EP0680093A3 (de) 1997-07-30
US5930651A (en) 1999-07-27
EP0680093B1 (de) 2000-09-13
EP0680093A2 (de) 1995-11-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee