DE69518682T2 - Kronenetherhaltige Entschichtungsmittel - Google Patents
Kronenetherhaltige EntschichtungsmittelInfo
- Publication number
- DE69518682T2 DE69518682T2 DE69518682T DE69518682T DE69518682T2 DE 69518682 T2 DE69518682 T2 DE 69518682T2 DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T DE69518682 T DE 69518682T DE 69518682 T2 DE69518682 T2 DE 69518682T2
- Authority
- DE
- Germany
- Prior art keywords
- crown ether
- agents containing
- containing crown
- decoating
- decoating agents
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/210,193 US5417802A (en) | 1994-03-18 | 1994-03-18 | Integrated circuit manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518682D1 DE69518682D1 (de) | 2000-10-12 |
DE69518682T2 true DE69518682T2 (de) | 2001-02-01 |
Family
ID=22781941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518682T Expired - Fee Related DE69518682T2 (de) | 1994-03-18 | 1995-03-16 | Kronenetherhaltige Entschichtungsmittel |
Country Status (8)
Country | Link |
---|---|
US (1) | US5417802A (de) |
EP (1) | EP0674231B1 (de) |
JP (1) | JPH07273074A (de) |
KR (1) | KR950034566A (de) |
DE (1) | DE69518682T2 (de) |
ES (1) | ES2150528T3 (de) |
SG (1) | SG24106A1 (de) |
TW (1) | TW295694B (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
US5648324A (en) * | 1996-01-23 | 1997-07-15 | Ocg Microelectronic Materials, Inc. | Photoresist stripping composition |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5817610A (en) * | 1996-09-06 | 1998-10-06 | Olin Microelectronic Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5759973A (en) * | 1996-09-06 | 1998-06-02 | Olin Microelectronic Chemicals, Inc. | Photoresist stripping and cleaning compositions |
US6133158A (en) * | 1998-01-27 | 2000-10-17 | Lucent Technologies Inc. | Process for removing alkali metals from solvents used in the manufacture of semiconductor wafers |
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
MY129673A (en) | 2000-03-20 | 2007-04-30 | Avantor Performance Mat Inc | Method and composition for removing sodium-containing material from microcircuit substrates |
EP1303792B1 (de) * | 2000-07-16 | 2012-10-03 | Board Of Regents, The University Of Texas System | Hoch auflösende ausrichtungsverfahren und entsprechende systeme für die präge-lithographie |
EP2270592B1 (de) * | 2000-07-17 | 2015-09-02 | Board of Regents, The University of Texas System | Verfahren zur Bildung einer Struktur auf einem Substrat |
AU2001280980A1 (en) * | 2000-08-01 | 2002-02-13 | Board Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
US8016277B2 (en) * | 2000-08-21 | 2011-09-13 | Board Of Regents, The University Of Texas System | Flexure based macro motion translation stage |
US20050274219A1 (en) * | 2004-06-01 | 2005-12-15 | Molecular Imprints, Inc. | Method and system to control movement of a body for nano-scale manufacturing |
JP2004523906A (ja) * | 2000-10-12 | 2004-08-05 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | 室温かつ低圧マイクロおよびナノ転写リソグラフィのためのテンプレート |
US6964793B2 (en) * | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
US20040038840A1 (en) * | 2002-04-24 | 2004-02-26 | Shihying Lee | Oxalic acid as a semiaqueous cleaning product for copper and dielectrics |
US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US20030235787A1 (en) * | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US6926929B2 (en) | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7071088B2 (en) * | 2002-08-23 | 2006-07-04 | Molecular Imprints, Inc. | Method for fabricating bulbous-shaped vias |
US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
US6980282B2 (en) | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US6871558B2 (en) * | 2002-12-12 | 2005-03-29 | Molecular Imprints, Inc. | Method for determining characteristics of substrate employing fluid geometries |
US7452574B2 (en) | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US8211214B2 (en) * | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060094612A1 (en) * | 2004-11-04 | 2006-05-04 | Mayumi Kimura | Post etch cleaning composition for use with substrates having aluminum |
US7759407B2 (en) * | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US20080206991A1 (en) * | 2007-02-22 | 2008-08-28 | Nadia Rahhal-Orabi | Methods of forming transistor contacts and via openings |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3562295A (en) * | 1968-12-18 | 1971-02-09 | Du Pont | Macrocyclic polyether compounds and ionic complexes thereof |
US3813309A (en) * | 1969-12-23 | 1974-05-28 | Ibm | Method for stripping resists from substrates |
US3871929A (en) * | 1974-01-30 | 1975-03-18 | Allied Chem | Polymeric etch resist strippers and method of using same |
US3997562A (en) * | 1974-10-01 | 1976-12-14 | E. I. Du Pont De Nemours And Company | Macrocyclic polyether/nitrile complexes |
US4403029A (en) * | 1982-09-02 | 1983-09-06 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
EP0367074A3 (de) * | 1988-10-31 | 1991-06-12 | LeaRonal, Inc. | Vorbereitung von gedruckten Schaltungsplatten für Elektroplattierung |
JP3048207B2 (ja) * | 1992-07-09 | 2000-06-05 | イー.ケー.シー.テクノロジー.インコーポレイテッド | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法 |
-
1994
- 1994-03-18 US US08/210,193 patent/US5417802A/en not_active Expired - Lifetime
-
1995
- 1995-03-15 TW TW084102548A patent/TW295694B/zh not_active IP Right Cessation
- 1995-03-16 EP EP95301748A patent/EP0674231B1/de not_active Expired - Lifetime
- 1995-03-16 ES ES95301748T patent/ES2150528T3/es not_active Expired - Lifetime
- 1995-03-16 DE DE69518682T patent/DE69518682T2/de not_active Expired - Fee Related
- 1995-03-17 JP JP7057836A patent/JPH07273074A/ja active Pending
- 1995-03-17 SG SG1995000121A patent/SG24106A1/en unknown
- 1995-03-18 KR KR1019950005686A patent/KR950034566A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US5417802A (en) | 1995-05-23 |
EP0674231A1 (de) | 1995-09-27 |
TW295694B (de) | 1997-01-11 |
ES2150528T3 (es) | 2000-12-01 |
DE69518682D1 (de) | 2000-10-12 |
SG24106A1 (en) | 1996-02-10 |
KR950034566A (ko) | 1995-12-28 |
JPH07273074A (ja) | 1995-10-20 |
EP0674231B1 (de) | 2000-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |