DE69513630T2 - Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält - Google Patents
Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthältInfo
- Publication number
- DE69513630T2 DE69513630T2 DE69513630T DE69513630T DE69513630T2 DE 69513630 T2 DE69513630 T2 DE 69513630T2 DE 69513630 T DE69513630 T DE 69513630T DE 69513630 T DE69513630 T DE 69513630T DE 69513630 T2 DE69513630 T2 DE 69513630T2
- Authority
- DE
- Germany
- Prior art keywords
- multiple layer
- barrier structure
- layer arrangement
- tunnel effect
- double barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/49—Fixed mounting or arrangements, e.g. one head per track
- G11B5/4907—Details for scanning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94202882 | 1994-10-05 | ||
PCT/IB1995/000776 WO1996011469A1 (en) | 1994-10-05 | 1995-09-21 | Magnetic multilayer device including a resonant-tunneling double-barrier structure |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69513630D1 DE69513630D1 (de) | 2000-01-05 |
DE69513630T2 true DE69513630T2 (de) | 2000-06-21 |
Family
ID=8217257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69513630T Expired - Fee Related DE69513630T2 (de) | 1994-10-05 | 1995-09-21 | Magnetische mehrlagenanordnung, die eine doppelbarrierenstruktur mit resonantem tunneleffekt enthält |
Country Status (4)
Country | Link |
---|---|
US (1) | US5636093A (de) |
EP (1) | EP0731969B1 (de) |
DE (1) | DE69513630T2 (de) |
WO (1) | WO1996011469A1 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3217703B2 (ja) * | 1995-09-01 | 2001-10-15 | 株式会社東芝 | 磁性体デバイス及びそれを用いた磁気センサ |
EP0801380A3 (de) * | 1996-04-10 | 1998-03-04 | Read-Rite Corporation | Riesenmagnetoresistive Wandler mit erhöhtem Ausgangssignal |
US5898547A (en) * | 1997-10-24 | 1999-04-27 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide |
WO1999022368A2 (en) | 1997-10-29 | 1999-05-06 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a spin-tunnel junction |
US5930087A (en) * | 1997-11-20 | 1999-07-27 | Hewlett-Packard Company | Robust recording head for near-contact operation |
US6169303B1 (en) * | 1998-01-06 | 2001-01-02 | Hewlett-Packard Company | Ferromagnetic tunnel junctions with enhanced magneto-resistance |
US6215301B1 (en) * | 1998-04-24 | 2001-04-10 | U.S. Philips Corporation | Magnetoresistive detector comprising a layer structure and a current directing means |
US6552882B1 (en) * | 1998-09-01 | 2003-04-22 | Nec Corporation | Information reproduction head apparatus and information recording/reproduction system |
US6219212B1 (en) | 1998-09-08 | 2001-04-17 | International Business Machines Corporation | Magnetic tunnel junction head structure with insulating antiferromagnetic layer |
JP2000113421A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 磁気トンネル接合磁気抵抗ヘッド |
GB2343308B (en) * | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
US20040017721A1 (en) | 1998-10-30 | 2004-01-29 | Schwabe Nikolai Franz Gregoe | Magnetic storage device |
US6185079B1 (en) | 1998-11-09 | 2001-02-06 | International Business Machines Corporation | Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor |
US6108177A (en) * | 1998-11-19 | 2000-08-22 | International Business Machines Corporation | Tunnel junction structure with FeX ferromagnetic layers |
US6178074B1 (en) | 1998-11-19 | 2001-01-23 | International Business Machines Corporation | Double tunnel junction with magnetoresistance enhancement layer |
US6223420B1 (en) | 1998-12-04 | 2001-05-01 | International Business Machines Corporation | Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency |
US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
US6275363B1 (en) * | 1999-07-23 | 2001-08-14 | International Business Machines Corporation | Read head with dual tunnel junction sensor |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6272036B1 (en) * | 1999-12-20 | 2001-08-07 | The University Of Chicago | Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage |
US6504689B1 (en) * | 2000-07-12 | 2003-01-07 | International Business Machines Corporation | Tunnel junction read head with flux guide coupled to and magnetically extending a recessed free layer to an air bearing surface |
US6544801B1 (en) * | 2000-08-21 | 2003-04-08 | Motorola, Inc. | Method of fabricating thermally stable MTJ cell and apparatus |
KR20040052495A (ko) * | 2001-04-04 | 2004-06-23 | 시게이트 테크놀로지 엘엘씨 | 연성 하층 바이어스에 의한 수직 자기 기록 헤드 |
US6724587B2 (en) | 2001-06-11 | 2004-04-20 | International Business Machines Corporation | Low temperature yoke type tunnel valve sensor |
JP3565268B2 (ja) * | 2001-06-22 | 2004-09-15 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP2003168287A (ja) * | 2001-07-24 | 2003-06-13 | Toshiba Corp | メモリモジュール、メモリシステム、および、データ転送方法 |
US6785092B2 (en) | 2001-07-24 | 2004-08-31 | Seagate Technology Llc | White head for high anisotropy media |
US6545906B1 (en) | 2001-10-16 | 2003-04-08 | Motorola, Inc. | Method of writing to scalable magnetoresistance random access memory element |
US7095646B2 (en) | 2002-07-17 | 2006-08-22 | Freescale Semiconductor, Inc. | Multi-state magnetoresistance random access cell with improved memory storage density |
US6828260B2 (en) * | 2002-10-29 | 2004-12-07 | Hewlett-Packard Development Company, L.P. | Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device |
JP3836788B2 (ja) * | 2002-12-26 | 2006-10-25 | 株式会社東芝 | 磁気抵抗効果素子、磁気抵抗効果型ヘッドおよび磁気記録再生装置 |
US6956763B2 (en) | 2003-06-27 | 2005-10-18 | Freescale Semiconductor, Inc. | MRAM element and methods for writing the MRAM element |
US6967366B2 (en) | 2003-08-25 | 2005-11-22 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory with reduced switching field variation |
US7477490B2 (en) * | 2004-06-30 | 2009-01-13 | Seagate Technology Llc | Single sensor element that is naturally differentiated |
US7129098B2 (en) | 2004-11-24 | 2006-10-31 | Freescale Semiconductor, Inc. | Reduced power magnetoresistive random access memory elements |
US7736765B2 (en) * | 2004-12-28 | 2010-06-15 | Seagate Technology Llc | Granular perpendicular magnetic recording media with dual recording layer and method of fabricating same |
US8110298B1 (en) | 2005-03-04 | 2012-02-07 | Seagate Technology Llc | Media for high density perpendicular magnetic recording |
US8119263B2 (en) * | 2005-09-22 | 2012-02-21 | Seagate Technology Llc | Tuning exchange coupling in magnetic recording media |
US8697260B2 (en) * | 2008-07-25 | 2014-04-15 | Seagate Technology Llc | Method and manufacture process for exchange decoupled first magnetic layer |
US7867637B2 (en) * | 2008-11-17 | 2011-01-11 | Seagate Technology Llc | Low coupling oxide media (LCOM) |
US8472148B2 (en) * | 2009-07-24 | 2013-06-25 | HGST Netherlands B.V. | Self-aligned double flux guided TMR sensor |
US9142240B2 (en) | 2010-07-30 | 2015-09-22 | Seagate Technology Llc | Apparatus including a perpendicular magnetic recording layer having a convex magnetic anisotropy profile |
TWI569484B (zh) * | 2014-01-24 | 2017-02-01 | 國立臺灣大學 | 具超晶格勢壘之磁穿隧接面及包含具超晶格勢壘磁穿隧接面之裝置 |
US9721596B2 (en) | 2015-02-27 | 2017-08-01 | Seagate Technology Llc | Data reader with resonant tunneling |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
US5350931A (en) * | 1991-07-29 | 1994-09-27 | The United States Of America As Represented By The Secretary Of The Army | Double barrier resonant propagation filter |
US5449561A (en) * | 1992-07-17 | 1995-09-12 | University Of Houston | Semimetal-semiconductor heterostructures and multilayers |
US5399879A (en) * | 1993-02-05 | 1995-03-21 | National Research Council Of Canada | Long wavelength IR photo-induced switching of a resonant tunnelling diode using the intersubband transition |
US5493465A (en) * | 1993-03-15 | 1996-02-20 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element and magnetic recording apparatus |
FR2702919B1 (fr) * | 1993-03-19 | 1995-05-12 | Thomson Csf | Transducteur magnétorésistif et procédé de réalisation. |
JP2784457B2 (ja) * | 1993-06-11 | 1998-08-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ装置 |
TW279977B (de) * | 1993-09-24 | 1996-07-01 | Philips Electronics Nv | |
US5452163A (en) * | 1993-12-23 | 1995-09-19 | International Business Machines Corporation | Multilayer magnetoresistive sensor |
US5565695A (en) * | 1995-04-21 | 1996-10-15 | Johnson; Mark B. | Magnetic spin transistor hybrid circuit element |
-
1995
- 1995-09-21 EP EP95929992A patent/EP0731969B1/de not_active Expired - Lifetime
- 1995-09-21 DE DE69513630T patent/DE69513630T2/de not_active Expired - Fee Related
- 1995-09-21 WO PCT/IB1995/000776 patent/WO1996011469A1/en active IP Right Grant
- 1995-09-28 US US08/535,703 patent/US5636093A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5636093A (en) | 1997-06-03 |
EP0731969B1 (de) | 1999-12-01 |
WO1996011469A1 (en) | 1996-04-18 |
EP0731969A1 (de) | 1996-09-18 |
DE69513630D1 (de) | 2000-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8322 | Nonbinding interest in granting licences declared | ||
8339 | Ceased/non-payment of the annual fee |