DE69513104D1 - Einteiliges Injektionsgerät und Verfahren zum Abgeben von Gasen auf eine Oberfläche - Google Patents
Einteiliges Injektionsgerät und Verfahren zum Abgeben von Gasen auf eine OberflächeInfo
- Publication number
- DE69513104D1 DE69513104D1 DE69513104T DE69513104T DE69513104D1 DE 69513104 D1 DE69513104 D1 DE 69513104D1 DE 69513104 T DE69513104 T DE 69513104T DE 69513104 T DE69513104 T DE 69513104T DE 69513104 D1 DE69513104 D1 DE 69513104D1
- Authority
- DE
- Germany
- Prior art keywords
- injection device
- piece injection
- delivering gases
- delivering
- gases
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45514—Mixing in close vicinity to the substrate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27681594A | 1994-07-18 | 1994-07-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69513104D1 true DE69513104D1 (de) | 1999-12-09 |
DE69513104T2 DE69513104T2 (de) | 2000-02-17 |
Family
ID=23058175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69513104T Expired - Lifetime DE69513104T2 (de) | 1994-07-18 | 1995-07-10 | Einteiliges Injektionsgerät und Verfahren zum Abgeben von Gasen auf eine Oberfläche |
Country Status (7)
Country | Link |
---|---|
US (2) | US5683516A (de) |
EP (1) | EP0697376B1 (de) |
JP (1) | JP2790437B2 (de) |
KR (1) | KR100190355B1 (de) |
DE (1) | DE69513104T2 (de) |
HK (1) | HK1011010A1 (de) |
TW (1) | TW359943B (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6200389B1 (en) | 1994-07-18 | 2001-03-13 | Silicon Valley Group Thermal Systems Llc | Single body injector and deposition chamber |
US6022414A (en) * | 1994-07-18 | 2000-02-08 | Semiconductor Equipment Group, Llc | Single body injector and method for delivering gases to a surface |
US5855957A (en) * | 1997-02-18 | 1999-01-05 | Watkins-Johnson Company | Optimization of SiO2 film conformality in atmospheric pressure chemical vapor deposition |
US5891250A (en) * | 1998-05-05 | 1999-04-06 | Memc Electronic Materials, Inc. | Injector for reactor |
US6179922B1 (en) * | 1998-07-10 | 2001-01-30 | Ball Semiconductor, Inc. | CVD photo resist deposition |
WO2000003060A1 (en) * | 1998-07-10 | 2000-01-20 | Silicon Valley Group Thermal Systems, Llc | Chemical vapor deposition apparatus employing linear injectors for delivering gaseous chemicals and method |
US6240335B1 (en) * | 1998-12-14 | 2001-05-29 | Palo Alto Technologies, Inc. | Distributed control system architecture and method for a material transport system |
KR20010086107A (ko) * | 1998-12-17 | 2001-09-07 | 알프레드 엘. 미첼슨 | 화학 증착용 버너 메니폴드 장치 |
US6736633B1 (en) | 1998-12-17 | 2004-05-18 | Corning Incorporated | Burner manifold apparatus for use in a chemical vapor deposition process |
US6220286B1 (en) | 1999-01-29 | 2001-04-24 | Michael L. Davenport | Gas blanket distributor |
US6143080A (en) * | 1999-02-02 | 2000-11-07 | Silicon Valley Group Thermal Systems Llc | Wafer processing reactor having a gas flow control system and method |
US20010047756A1 (en) * | 1999-05-17 | 2001-12-06 | Bartholomew Lawrence Duane | Gas distribution system |
TW530097B (en) | 1999-05-21 | 2003-05-01 | Silicon Valley Group Thermal | Protective gas shield apparatus |
TW452635B (en) * | 1999-05-21 | 2001-09-01 | Silicon Valley Group Thermal | Gas delivery metering tube and gas delivery metering device using the same |
US6475284B1 (en) * | 1999-09-20 | 2002-11-05 | Moore Epitaxial, Inc. | Gas dispersion head |
US6855370B2 (en) * | 2001-05-04 | 2005-02-15 | E. I. Du Pont De Nemours And Company | Fluoropolymer interlayer dielectric by chemical vapor deposition |
JP2002353184A (ja) * | 2001-05-28 | 2002-12-06 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
TWI287587B (en) * | 2001-08-24 | 2007-10-01 | Asml Us Inc | Protective shield and system for gas distribution |
MY134338A (en) | 2001-08-24 | 2007-12-31 | Asml Us Inc | Atmospheric pressure wafer processing reactor having an internal pressure control system and method |
US6808741B1 (en) * | 2001-10-26 | 2004-10-26 | Seagate Technology Llc | In-line, pass-by method for vapor lubrication |
KR20030038396A (ko) * | 2001-11-01 | 2003-05-16 | 에이에스엠엘 유에스, 인코포레이티드 | 우선적인 화학 기상 증착 장치 및 방법 |
US20040018735A1 (en) * | 2002-05-21 | 2004-01-29 | Park Seung G. | Method of depositing an oxide film by chemical vapor deposition |
RU2304323C2 (ru) * | 2002-06-21 | 2007-08-10 | Е.И.Дюпон Де Немур Энд Компани | Способ получения фторполимерного слоя на тонкопленочном приборе |
US7780787B2 (en) * | 2004-08-11 | 2010-08-24 | First Solar, Inc. | Apparatus and method for depositing a material on a substrate |
JP5156621B2 (ja) * | 2005-03-17 | 2013-03-06 | ノア プレシジョン リミテッド ライアビリティ カンパニー | バブラー用温度制御装置 |
US7794667B2 (en) * | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
CN101003895B (zh) * | 2006-01-16 | 2011-10-19 | 中微半导体设备(上海)有限公司 | 一种传送反应物到基片的装置及其处理方法 |
EP1992007A4 (de) * | 2006-03-03 | 2010-05-05 | Prasad Gadgil | Vorrichtung und verfahren zur chemischen grossflächen-mehrschicht-atomschicht-dampfverarbeitung von dünnfilmen |
US20100015731A1 (en) * | 2007-02-20 | 2010-01-21 | Lam Research Corporation | Method of low-k dielectric film repair |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US8333839B2 (en) * | 2007-12-27 | 2012-12-18 | Synos Technology, Inc. | Vapor deposition reactor |
US20100037820A1 (en) * | 2008-08-13 | 2010-02-18 | Synos Technology, Inc. | Vapor Deposition Reactor |
US8470718B2 (en) * | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
US8758512B2 (en) | 2009-06-08 | 2014-06-24 | Veeco Ald Inc. | Vapor deposition reactor and method for forming thin film |
DE102009042439A1 (de) * | 2009-09-22 | 2011-03-31 | Gühring Ohg | Entschichtungsanlage |
US20110076421A1 (en) * | 2009-09-30 | 2011-03-31 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film on curved surface |
EP2441860A1 (de) * | 2010-10-13 | 2012-04-18 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Vorrichtung und Methode zur Abscheidung auf einer Oberfläche mittels Atomic Layer Deposition |
US8840958B2 (en) | 2011-02-14 | 2014-09-23 | Veeco Ald Inc. | Combined injection module for sequentially injecting source precursor and reactant precursor |
WO2013019285A2 (en) | 2011-03-23 | 2013-02-07 | Pilkington Group Limited | Apparatus for depositing thin film coatings and method of deposition utilizing such apparatus |
US20130068161A1 (en) * | 2011-09-15 | 2013-03-21 | Applied Materials, Inc. | Gas delivery and distribution for uniform process in linear-type large-area plasma reactor |
JP5403113B2 (ja) * | 2012-06-15 | 2014-01-29 | 東京エレクトロン株式会社 | 成膜装置 |
KR20140038070A (ko) * | 2012-09-20 | 2014-03-28 | 삼성코닝정밀소재 주식회사 | 가스 분사 장치 및 이에 사용되는 인젝터 파이프 |
JP6153401B2 (ja) * | 2013-07-02 | 2017-06-28 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
KR102337807B1 (ko) * | 2014-11-14 | 2021-12-09 | 삼성디스플레이 주식회사 | 박막 증착 장치 |
DE102014117492A1 (de) * | 2014-11-28 | 2016-06-02 | Aixtron Se | Vorrichtung zum Abscheiden einer Schicht auf einem Substrat |
US10672920B2 (en) | 2015-03-12 | 2020-06-02 | Vitro Flat Glass Llc | Article with buffer layer |
US10112209B2 (en) | 2015-12-11 | 2018-10-30 | VITRO S.A.B. de C.V. | Glass drawdown coating system |
US10745804B2 (en) * | 2017-01-31 | 2020-08-18 | Ofs Fitel, Llc | Parallel slit torch for making optical fiber preform |
DE102018120580A1 (de) * | 2018-08-23 | 2020-02-27 | Infineon Technologies Ag | Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE107723C (de) * | ||||
GB1282866A (en) * | 1968-08-16 | 1972-07-26 | Pilkington Brothers Ltd | Improvements in or relating to the production of glass having desired surface characteristics |
DD107723A1 (de) * | 1973-12-03 | 1974-08-12 | ||
GB1524326A (en) * | 1976-04-13 | 1978-09-13 | Bfg Glassgroup | Coating of glass |
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
US4136828A (en) * | 1977-06-27 | 1979-01-30 | Corning Glass Works | Oxide depositing ribbon burner |
JPS5437077A (en) * | 1977-08-02 | 1979-03-19 | Agency Of Ind Science & Technol | Chemical evaporation method and apparatus for same |
CA1138725A (en) * | 1978-07-20 | 1983-01-04 | Robert Terneu | Glass coating |
US4369031A (en) * | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
CH643469A5 (fr) * | 1981-12-22 | 1984-06-15 | Siv Soc Italiana Vetro | Installation pour deposer en continu, sur la surface d'un substrat porte a haute temperature, une couche d'une matiere solide. |
US4537795A (en) * | 1982-09-16 | 1985-08-27 | Sovonics Solar Systems | Method for introducing sweep gases into a glow discharge deposition apparatus |
US4499853A (en) * | 1983-12-09 | 1985-02-19 | Rca Corporation | Distributor tube for CVD reactor |
US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US4756272A (en) * | 1986-06-02 | 1988-07-12 | Motorola, Inc. | Multiple gas injection apparatus for LPCVD equipment |
US5221556A (en) * | 1987-06-24 | 1993-06-22 | Epsilon Technology, Inc. | Gas injectors for reaction chambers in CVD systems |
US4834020A (en) | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
EP0322466A1 (de) * | 1987-12-24 | 1989-07-05 | Ibm Deutschland Gmbh | PECVD-(plasmaverstärkte chemische Dampfabscheidung) Verfahren zum Abscheiden von Wolframschichten oder Wolfram enthaltenden Schichten mit In situ-Erzeugung von Wolframfluorid |
JPH02295116A (ja) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | 半導体製造装置 |
US5136975A (en) | 1990-06-21 | 1992-08-11 | Watkins-Johnson Company | Injector and method for delivering gaseous chemicals to a surface |
US5269847A (en) * | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
DE4029268C2 (de) * | 1990-09-14 | 1995-07-06 | Balzers Hochvakuum | Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung |
WO1993006619A1 (en) * | 1991-09-27 | 1993-04-01 | Komatsu Electronic Metals Co., Ltd. | Apparatus for introducing gas, and apparatus and method for epitaxial growth |
FR2682047B1 (fr) * | 1991-10-07 | 1993-11-12 | Commissariat A Energie Atomique | Reacteur de traitement chimique en phase gazeuse. |
US5393563A (en) * | 1991-10-29 | 1995-02-28 | Ellis, Jr.; Frank B. | Formation of tin oxide films on glass substrates |
US5328722A (en) * | 1992-11-06 | 1994-07-12 | Applied Materials, Inc. | Metal chemical vapor deposition process using a shadow ring |
US5453124A (en) * | 1992-12-30 | 1995-09-26 | Texas Instruments Incorporated | Programmable multizone gas injector for single-wafer semiconductor processing equipment |
US5456740A (en) * | 1994-06-22 | 1995-10-10 | Millipore Corporation | High-efficiency metal membrane getter element and process for making |
US5653808A (en) * | 1996-08-07 | 1997-08-05 | Macleish; Joseph H. | Gas injection system for CVD reactors |
-
1995
- 1995-01-13 TW TW084100288A patent/TW359943B/zh not_active IP Right Cessation
- 1995-07-10 EP EP95304783A patent/EP0697376B1/de not_active Expired - Lifetime
- 1995-07-10 DE DE69513104T patent/DE69513104T2/de not_active Expired - Lifetime
- 1995-07-18 JP JP7181702A patent/JP2790437B2/ja not_active Expired - Lifetime
- 1995-07-18 KR KR1019950020958A patent/KR100190355B1/ko not_active IP Right Cessation
-
1996
- 1996-03-22 US US08/621,772 patent/US5683516A/en not_active Expired - Lifetime
-
1997
- 1997-06-04 US US08/869,085 patent/US5935647A/en not_active Expired - Lifetime
-
1998
- 1998-11-09 HK HK98111870A patent/HK1011010A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HK1011010A1 (en) | 1999-07-02 |
JPH0864588A (ja) | 1996-03-08 |
EP0697376A1 (de) | 1996-02-21 |
US5683516A (en) | 1997-11-04 |
JP2790437B2 (ja) | 1998-08-27 |
DE69513104T2 (de) | 2000-02-17 |
TW359943B (en) | 1999-06-01 |
EP0697376B1 (de) | 1999-11-03 |
KR100190355B1 (ko) | 1999-06-01 |
US5935647A (en) | 1999-08-10 |
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