DE69510888D1 - Positiv arbeitende Fotoresist-Zusammensetzung - Google Patents

Positiv arbeitende Fotoresist-Zusammensetzung

Info

Publication number
DE69510888D1
DE69510888D1 DE69510888T DE69510888T DE69510888D1 DE 69510888 D1 DE69510888 D1 DE 69510888D1 DE 69510888 T DE69510888 T DE 69510888T DE 69510888 T DE69510888 T DE 69510888T DE 69510888 D1 DE69510888 D1 DE 69510888D1
Authority
DE
Germany
Prior art keywords
photoresist composition
positive photoresist
positive
composition
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69510888T
Other languages
English (en)
Other versions
DE69510888T2 (de
Inventor
Koji Shirakawa
Kenichiro Sato
Kunihiko Kodama
Yasumasa Kawabe
Shinji Sakuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69510888D1 publication Critical patent/DE69510888D1/de
Publication of DE69510888T2 publication Critical patent/DE69510888T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
DE69510888T 1994-10-31 1995-10-30 Positiv arbeitende Fotoresist-Zusammensetzung Expired - Lifetime DE69510888T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26749194A JP3278306B2 (ja) 1994-10-31 1994-10-31 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
DE69510888D1 true DE69510888D1 (de) 1999-08-26
DE69510888T2 DE69510888T2 (de) 1999-11-11

Family

ID=17445594

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510888T Expired - Lifetime DE69510888T2 (de) 1994-10-31 1995-10-30 Positiv arbeitende Fotoresist-Zusammensetzung

Country Status (4)

Country Link
US (1) US5629128A (de)
EP (1) EP0710886B1 (de)
JP (1) JP3278306B2 (de)
DE (1) DE69510888T2 (de)

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US5912102A (en) * 1994-12-28 1999-06-15 Nippon Zeon Co., Ltd. Positive resist composition
JP3473931B2 (ja) * 1996-11-11 2003-12-08 東京応化工業株式会社 リフトオフ用ポジ型感光性組成物およびパターン形成方法
US6051358A (en) * 1997-11-04 2000-04-18 Shipley Company, L.L.C. Photoresist with novel photoactive compound
US6027853A (en) * 1998-01-16 2000-02-22 Olin Microelectronic Chemicals, Inc. Process for preparing a radiation-sensitive composition
US6423907B1 (en) * 1998-02-09 2002-07-23 Tessera, Inc. Components with releasable leads
WO2000034829A1 (fr) * 1998-12-10 2000-06-15 Clariant International Ltd. Composition a base de resine photosensible
US6506831B2 (en) 1998-12-20 2003-01-14 Honeywell International Inc. Novolac polymer planarization films with high temperature stability
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
US6492085B1 (en) * 1999-08-10 2002-12-10 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and process and synthesizing polyphenol compound
JP3708049B2 (ja) 2001-12-26 2005-10-19 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2003195495A (ja) 2001-12-26 2003-07-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
KR100783603B1 (ko) * 2002-01-05 2007-12-07 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법
US20050160934A1 (en) 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
WO2005000597A1 (ja) * 2003-06-25 2005-01-06 Asahi Kasei Chemicals Corporation 記録材料用顕色剤
US7939131B2 (en) * 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8142703B2 (en) 2005-10-05 2012-03-27 Molecular Imprints, Inc. Imprint lithography method
US20080110557A1 (en) * 2006-11-15 2008-05-15 Molecular Imprints, Inc. Methods and Compositions for Providing Preferential Adhesion and Release of Adjacent Surfaces
US20100109195A1 (en) 2008-11-05 2010-05-06 Molecular Imprints, Inc. Release agent partition control in imprint lithography

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JPS6210645A (ja) 1985-07-09 1987-01-19 Kanto Kagaku Kk ポジ型フオトレジスト組成物
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JPS62178562A (ja) 1986-01-30 1987-08-05 Japan Synthetic Rubber Co Ltd １，２−キノンジアジド化合物の製造方法
DE3784549D1 (de) 1986-05-02 1993-04-15 Hoechst Celanese Corp Positiv-arbeitendes lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches aufzeichnungsmaterial.
KR920001450B1 (ko) 1986-12-23 1992-02-14 쉬플리 캄파니 인코포레이티드 감광성 내식막의 제조방법, 감광성 내식막 조성물 및 이의 제조방법
US4797345A (en) * 1987-07-01 1989-01-10 Olin Hunt Specialty Products, Inc. Light-sensitive 1,2-naphthoquinone-2-diazide-4-sulfonic acid monoesters of cycloalkyl substituted phenol and their use in light-sensitive mixtures
JPH0814696B2 (ja) 1987-09-17 1996-02-14 富士写真フイルム株式会社 感光性樹脂組成物
JP2552891B2 (ja) 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2800186B2 (ja) 1988-07-07 1998-09-21 住友化学工業株式会社 集積回路製作用ポジ型レジスト組成物の製造方法
JP2715480B2 (ja) 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
US5178986A (en) 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US4957846A (en) 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
US4992356A (en) 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Process of developing a radiation imaged product with trinuclear novolak oligomer having o-naphthoquinone diazide sulfonyl group
JPH087433B2 (ja) 1989-04-19 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
JP2709507B2 (ja) 1989-04-19 1998-02-04 日本ゼオン株式会社 ポジ型レジスト組成物
JP2700918B2 (ja) 1989-04-26 1998-01-21 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2631744B2 (ja) 1989-05-11 1997-07-16 日本ゼオン株式会社 ポジ型レジスト組成物
JP2741243B2 (ja) 1989-05-11 1998-04-15 日本ゼオン株式会社 ポジ型レジスト組成物
JP2571136B2 (ja) 1989-11-17 1997-01-16 日本ゼオン株式会社 ポジ型レジスト組成物
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
JP2761786B2 (ja) 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2830348B2 (ja) 1990-04-09 1998-12-02 住友化学工業株式会社 フェノール化合物およびポジ型レジスト組成物
US5151340A (en) 1990-07-02 1992-09-29 Ocg Microelectronic Materials, Inc. Selected photoactive methylolated cyclohexanol compounds and their use in radiation-sensitive mixtures
US5283155A (en) * 1991-01-11 1994-02-01 Sumitomo Chemical Company, Limited Positive resist composition comprising an alkali-soluble resin and a quinone diazide sulfonic acid ester of a hydroxy flavan derivative
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
JP3094652B2 (ja) 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
JP3466218B2 (ja) * 1992-06-04 2003-11-10 住友化学工業株式会社 ポジ型レジスト組成物
JP3199077B2 (ja) 1992-07-03 2001-08-13 シップレーカンパニー エル エル シー ポジ型感光性組成物
US5401605A (en) * 1992-08-12 1995-03-28 Tokyo Ohka Kogyo Co., Ltd. Positive working photosensitive resin composition containing 1,2-naphthoquinone diazide esterification product of triphenylmethane compound
JPH06148878A (ja) 1992-11-04 1994-05-27 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JPH06202321A (ja) 1992-11-11 1994-07-22 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US5434031A (en) * 1992-11-18 1995-07-18 Tokyo Ohka Kogyo Co., Ltd. Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive
JPH06301203A (ja) * 1993-04-13 1994-10-28 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
EP0710886A1 (de) 1996-05-08
US5629128A (en) 1997-05-13
JP3278306B2 (ja) 2002-04-30
EP0710886B1 (de) 1999-07-21
DE69510888T2 (de) 1999-11-11
JPH08129255A (ja) 1996-05-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP