DE69506734T2 - Verfahren zum herstellen hocheffizienter leuchtdioden - Google Patents

Verfahren zum herstellen hocheffizienter leuchtdioden

Info

Publication number
DE69506734T2
DE69506734T2 DE69506734T DE69506734T DE69506734T2 DE 69506734 T2 DE69506734 T2 DE 69506734T2 DE 69506734 T DE69506734 T DE 69506734T DE 69506734 T DE69506734 T DE 69506734T DE 69506734 T2 DE69506734 T2 DE 69506734T2
Authority
DE
Germany
Prior art keywords
silicon carbide
highly efficient
laser light
producing highly
efficient lighting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69506734T
Other languages
English (en)
Other versions
DE69506734D1 (de
Inventor
Gerald Negley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc, Cree Inc filed Critical Cree Research Inc
Publication of DE69506734D1 publication Critical patent/DE69506734D1/de
Application granted granted Critical
Publication of DE69506734T2 publication Critical patent/DE69506734T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0054—Processes for devices with an active region comprising only group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal
DE69506734T 1994-10-07 1995-10-02 Verfahren zum herstellen hocheffizienter leuchtdioden Expired - Lifetime DE69506734T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/319,803 US5631190A (en) 1994-10-07 1994-10-07 Method for producing high efficiency light-emitting diodes and resulting diode structures
PCT/US1995/012622 WO1996011504A1 (en) 1994-10-07 1995-10-02 Method for producing high efficiency light-emitting diodes and resulting diode structures

Publications (2)

Publication Number Publication Date
DE69506734D1 DE69506734D1 (de) 1999-01-28
DE69506734T2 true DE69506734T2 (de) 1999-07-15

Family

ID=23243704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69506734T Expired - Lifetime DE69506734T2 (de) 1994-10-07 1995-10-02 Verfahren zum herstellen hocheffizienter leuchtdioden

Country Status (9)

Country Link
US (2) US5631190A (de)
EP (1) EP0786150B1 (de)
JP (1) JPH11505666A (de)
KR (1) KR100369751B1 (de)
CN (1) CN1092404C (de)
AT (1) ATE174724T1 (de)
AU (1) AU3761295A (de)
DE (1) DE69506734T2 (de)
WO (1) WO1996011504A1 (de)

Families Citing this family (345)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19624677A1 (de) * 1996-06-20 1998-01-02 Siemens Ag Verfahren zur Vereinzelung von optoelektrischen Bauelementen
EP1014455B1 (de) 1997-07-25 2006-07-12 Nichia Corporation Halbleitervorrichtung aus einer nitridverbindung
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6265289B1 (en) * 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
EP1727189A2 (de) * 1999-12-27 2006-11-29 Matsushita Electric Industrial Co., Ltd. Herstellungsverfahren für ein Halbleiterbauelement
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) * 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子並びに発光性半導体素子の製造方法
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
USRE46589E1 (en) 2001-01-16 2017-10-24 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6747298B2 (en) * 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
EP1677346B1 (de) * 2001-10-01 2011-12-14 Electro Scientific Industries, Inc. Bearbeiten von Substraten, insbesondere von Halbleitersubstraten
JP3875867B2 (ja) * 2001-10-15 2007-01-31 新光電気工業株式会社 シリコン基板の穴形成方法
US6903446B2 (en) * 2001-10-23 2005-06-07 Cree, Inc. Pattern for improved visual inspection of semiconductor devices
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
JP2003151921A (ja) * 2001-11-09 2003-05-23 Sanyo Electric Co Ltd 化合物半導体とその製造方法
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
WO2004027884A1 (en) * 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
KR101045160B1 (ko) * 2002-12-20 2011-06-30 크리 인코포레이티드 자기정렬 반도체 메사와 콘택층을 구비한 반도체 소자형성방법 및 그에 관련된 소자
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US20040259279A1 (en) 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US7531380B2 (en) * 2003-04-30 2009-05-12 Cree, Inc. Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
US7714345B2 (en) * 2003-04-30 2010-05-11 Cree, Inc. Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
KR100558436B1 (ko) * 2003-06-10 2006-03-10 삼성전기주식회사 질화갈륨 단결정 기판의 제조방법
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7041579B2 (en) * 2003-10-22 2006-05-09 Northrop Grumman Corporation Hard substrate wafer sawing process
CA2545628A1 (en) * 2003-11-12 2005-05-26 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting devices (leds) thereon and leds so formed
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US7008861B2 (en) * 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
US7450311B2 (en) * 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
US7615689B2 (en) * 2004-02-12 2009-11-10 Seminis Vegatable Seeds, Inc. Methods for coupling resistance alleles in tomato
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
CN101901858B (zh) * 2004-04-28 2014-01-29 沃提科尔公司 垂直结构半导体器件
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
JP4890746B2 (ja) * 2004-06-14 2012-03-07 株式会社ディスコ ウエーハの加工方法
TWI433343B (zh) * 2004-06-22 2014-04-01 Verticle Inc 具有改良光輸出的垂直構造半導體裝置
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US7118262B2 (en) * 2004-07-23 2006-10-10 Cree, Inc. Reflective optical elements for semiconductor light emitting devices
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
US20060038188A1 (en) * 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
WO2006050372A2 (en) 2004-11-01 2006-05-11 The Regents Of The University Of California Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7322732B2 (en) * 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8288942B2 (en) * 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
NL1029688C2 (nl) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's.
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7170100B2 (en) 2005-01-21 2007-01-30 Luminus Devices, Inc. Packaging designs for LEDs
US7692207B2 (en) * 2005-01-21 2010-04-06 Luminus Devices, Inc. Packaging designs for LEDs
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
TWI342613B (en) * 2005-02-14 2011-05-21 Showa Denko Kk Nitride semiconductor light-emitting device and method for fabrication thereof
US20070045640A1 (en) 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US20070085098A1 (en) * 2005-10-17 2007-04-19 Luminus Devices, Inc. Patterned devices and related methods
US7348603B2 (en) * 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7388233B2 (en) * 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US20080099777A1 (en) * 2005-10-19 2008-05-01 Luminus Devices, Inc. Light-emitting devices and related systems
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
TWI270223B (en) * 2005-11-21 2007-01-01 Epistar Corp A method of making a light emitting element
CN100407461C (zh) * 2005-11-28 2008-07-30 晶元光电股份有限公司 高发光效率的发光元件的制造方法
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
EP1964104A4 (de) 2005-12-21 2012-01-11 Cree Inc Schild und beleuchtungsverfahren
CN101460779A (zh) 2005-12-21 2009-06-17 科锐Led照明技术公司 照明装置
US7614759B2 (en) 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US7442564B2 (en) * 2006-01-19 2008-10-28 Cree, Inc. Dispensed electrical interconnections
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US8264138B2 (en) * 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
KR100764432B1 (ko) * 2006-04-05 2007-10-05 삼성전기주식회사 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US9921428B2 (en) 2006-04-18 2018-03-20 Cree, Inc. Light devices, display devices, backlighting devices, edge-lighting devices, combination backlighting and edge-lighting devices
BRPI0710463A2 (pt) 2006-04-18 2011-08-16 Cree Led Lighting Solutions dispositivo e método de iluminação
EP2052589A4 (de) 2006-04-18 2012-09-19 Cree Inc Beleuchtungsvorrichtung und beleuchtungsverfahren
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
WO2007130536A2 (en) 2006-05-05 2007-11-15 Cree Led Lighting Solutions, Inc. Lighting device
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
US8033692B2 (en) * 2006-05-23 2011-10-11 Cree, Inc. Lighting device
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
US8596819B2 (en) 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US7943952B2 (en) * 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
US7763478B2 (en) * 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
EP3624560A1 (de) 2006-08-23 2020-03-18 IDEAL Industries Lighting LLC Beleuchtungsvorrichtung und beleuchtungsverfahren
WO2008033986A2 (en) 2006-09-13 2008-03-20 Cree Led Lighting Solutions, Inc. Lighting device
EP2066968B1 (de) 2006-09-18 2016-04-27 Cree, Inc. Beleuchtungsvorrichtungen, beleuchtungsanordnungen, halterungen und verwendungsverfahren
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
JP4544231B2 (ja) * 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
TWI475714B (zh) 2006-11-07 2015-03-01 克里公司 照明裝置及照明方法
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
TWI496315B (zh) 2006-11-13 2015-08-11 Cree Inc 照明裝置、被照明的殼體及照明方法
US8486742B2 (en) 2006-11-21 2013-07-16 Epistar Corporation Method for manufacturing high efficiency light-emitting diodes
CN101622493A (zh) 2006-12-04 2010-01-06 科锐Led照明科技公司 照明装置和照明方法
EP2111640B1 (de) * 2007-01-22 2019-05-08 Cree, Inc. Fehlertoleranter lichtemitter und verfahren zu dessen herstellung
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
TWI440210B (zh) 2007-01-22 2014-06-01 Cree Inc 使用發光裝置外部互連陣列之照明裝置及其製造方法
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US8110425B2 (en) * 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US7910944B2 (en) * 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
EP2469151B1 (de) 2007-05-08 2018-08-29 Cree, Inc. Beleuchtungsvorrichtungen und Beleuchtungsverfahren
WO2008137983A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
US20090002979A1 (en) * 2007-06-27 2009-01-01 Cree, Inc. Light emitting device (led) lighting systems for emitting light in multiple directions and related methods
US8042971B2 (en) 2007-06-27 2011-10-25 Cree, Inc. Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
CN101743488B (zh) * 2007-07-17 2014-02-26 科锐公司 具有内部光学特性结构的光学元件及其制造方法
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
WO2009055079A1 (en) * 2007-10-26 2009-04-30 Cree Led Lighting Solutions, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US8866410B2 (en) 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
US8178888B2 (en) * 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US7955875B2 (en) * 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
US8445824B2 (en) * 2008-10-24 2013-05-21 Cree, Inc. Lighting device
US8008845B2 (en) * 2008-10-24 2011-08-30 Cree, Inc. Lighting device which includes one or more solid state light emitting device
US8858032B2 (en) * 2008-10-24 2014-10-14 Cree, Inc. Lighting device, heat transfer structure and heat transfer element
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US10197240B2 (en) * 2009-01-09 2019-02-05 Cree, Inc. Lighting device
TWI470823B (zh) * 2009-02-11 2015-01-21 Epistar Corp 發光元件及其製造方法
US8950910B2 (en) * 2009-03-26 2015-02-10 Cree, Inc. Lighting device and method of cooling lighting device
US9841162B2 (en) 2009-05-18 2017-12-12 Cree, Inc. Lighting device with multiple-region reflector
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8216867B2 (en) 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
US20110012141A1 (en) 2009-07-15 2011-01-20 Le Toquin Ronan P Single-color wavelength-converted light emitting devices
US8716952B2 (en) * 2009-08-04 2014-05-06 Cree, Inc. Lighting device having first, second and third groups of solid state light emitters, and lighting arrangement
US8648546B2 (en) 2009-08-14 2014-02-11 Cree, Inc. High efficiency lighting device including one or more saturated light emitters, and method of lighting
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US9605844B2 (en) * 2009-09-01 2017-03-28 Cree, Inc. Lighting device with heat dissipation elements
US8901845B2 (en) 2009-09-24 2014-12-02 Cree, Inc. Temperature responsive control for lighting apparatus including light emitting devices providing different chromaticities and related methods
US9713211B2 (en) 2009-09-24 2017-07-18 Cree, Inc. Solid state lighting apparatus with controllable bypass circuits and methods of operation thereof
US10264637B2 (en) 2009-09-24 2019-04-16 Cree, Inc. Solid state lighting apparatus with compensation bypass circuits and methods of operation thereof
US8602579B2 (en) 2009-09-25 2013-12-10 Cree, Inc. Lighting devices including thermally conductive housings and related structures
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US9464801B2 (en) 2009-09-25 2016-10-11 Cree, Inc. Lighting device with one or more removable heat sink elements
US9285103B2 (en) * 2009-09-25 2016-03-15 Cree, Inc. Light engines for lighting devices
WO2011037876A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device having heat dissipation element
US8777449B2 (en) * 2009-09-25 2014-07-15 Cree, Inc. Lighting devices comprising solid state light emitters
US9353933B2 (en) * 2009-09-25 2016-05-31 Cree, Inc. Lighting device with position-retaining element
US9068719B2 (en) * 2009-09-25 2015-06-30 Cree, Inc. Light engines for lighting devices
US8845137B2 (en) 2009-09-25 2014-09-30 Cree, Inc. Lighting device having heat dissipation element
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9030120B2 (en) * 2009-10-20 2015-05-12 Cree, Inc. Heat sinks and lamp incorporating same
US9217542B2 (en) 2009-10-20 2015-12-22 Cree, Inc. Heat sinks and lamp incorporating same
WO2011071886A1 (en) * 2009-12-07 2011-06-16 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8508116B2 (en) 2010-01-27 2013-08-13 Cree, Inc. Lighting device with multi-chip light emitters, solid state light emitter support members and lighting elements
WO2011100193A1 (en) 2010-02-12 2011-08-18 Cree, Inc. Lighting device with heat dissipation elements
WO2011100224A2 (en) 2010-02-12 2011-08-18 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US9518715B2 (en) * 2010-02-12 2016-12-13 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
WO2011100195A1 (en) 2010-02-12 2011-08-18 Cree, Inc. Solid state lighting device, and method of assembling the same
US8773007B2 (en) 2010-02-12 2014-07-08 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8508127B2 (en) * 2010-03-09 2013-08-13 Cree, Inc. High CRI lighting device with added long-wavelength blue color
US8476836B2 (en) 2010-05-07 2013-07-02 Cree, Inc. AC driven solid state lighting apparatus with LED string including switched segments
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8896005B2 (en) 2010-07-29 2014-11-25 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
US8960989B2 (en) 2010-08-09 2015-02-24 Cree, Inc. Lighting devices with removable light engine components, lighting device elements and methods
US8410679B2 (en) 2010-09-21 2013-04-02 Cree, Inc. Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
US9515229B2 (en) 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
US8573804B2 (en) 2010-10-08 2013-11-05 Guardian Industries Corp. Light source, device including light source, and/or methods of making the same
US9293653B2 (en) 2010-10-08 2016-03-22 Guardian Industries Corp. Light source with light scattering features, device including light source with light scattering features, and/or methods of making the same
US8357553B2 (en) 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
US8492788B2 (en) 2010-10-08 2013-07-23 Guardian Industries Corp. Insulating glass (IG) or vacuum insulating glass (VIG) unit including light source, and/or methods of making the same
US8434904B2 (en) 2010-12-06 2013-05-07 Guardian Industries Corp. Insulated glass units incorporating emitters, and/or methods of making the same
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
CN102544250B (zh) * 2010-12-27 2014-05-07 同方光电科技有限公司 一种GaN基发光二极管的制作方法
US8589120B2 (en) 2011-01-28 2013-11-19 Cree, Inc. Methods, systems, and apparatus for determining optical properties of elements of lighting components having similar color points
US9053958B2 (en) 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US10098197B2 (en) 2011-06-03 2018-10-09 Cree, Inc. Lighting devices with individually compensating multi-color clusters
US8847513B2 (en) 2011-03-08 2014-09-30 Cree, Inc. Method and apparatus for controlling light output color and/or brightness
US10030863B2 (en) 2011-04-19 2018-07-24 Cree, Inc. Heat sink structures, lighting elements and lamps incorporating same, and methods of making same
US8921875B2 (en) 2011-05-10 2014-12-30 Cree, Inc. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
US9839083B2 (en) 2011-06-03 2017-12-05 Cree, Inc. Solid state lighting apparatus and circuits including LED segments configured for targeted spectral power distribution and methods of operating the same
US8906263B2 (en) 2011-06-03 2014-12-09 Cree, Inc. Red nitride phosphors
US8729790B2 (en) 2011-06-03 2014-05-20 Cree, Inc. Coated phosphors and light emitting devices including the same
US8814621B2 (en) 2011-06-03 2014-08-26 Cree, Inc. Methods of determining and making red nitride compositions
US8747697B2 (en) 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
US8616724B2 (en) 2011-06-23 2013-12-31 Cree, Inc. Solid state directional lamp including retroreflective, multi-element directional lamp optic
US8757840B2 (en) 2011-06-23 2014-06-24 Cree, Inc. Solid state retroreflective directional lamp
US8777463B2 (en) 2011-06-23 2014-07-15 Cree, Inc. Hybrid solid state emitter printed circuit board for use in a solid state directional lamp
US8777455B2 (en) 2011-06-23 2014-07-15 Cree, Inc. Retroreflective, multi-element design for a solid state directional lamp
US8684569B2 (en) 2011-07-06 2014-04-01 Cree, Inc. Lens and trim attachment structure for solid state downlights
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US8742671B2 (en) 2011-07-28 2014-06-03 Cree, Inc. Solid state lighting apparatus and methods using integrated driver circuitry
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US9318669B2 (en) 2012-01-30 2016-04-19 Cree, Inc. Methods of determining and making red nitride compositions
US9554445B2 (en) 2012-02-03 2017-01-24 Cree, Inc. Color point and/or lumen output correction device, lighting system with color point and/or lumen output correction, lighting device, and methods of lighting
US10378749B2 (en) 2012-02-10 2019-08-13 Ideal Industries Lighting Llc Lighting device comprising shield element, and shield element
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US20130310903A1 (en) * 2012-03-21 2013-11-21 Catherine Y. LI Anti-Depression Light-Wave Device and Usage Thereof
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
US8608525B1 (en) 2012-06-05 2013-12-17 Guardian Industries Corp. Coated articles and/or devices with optical out-coupling layer stacks (OCLS), and/or methods of making the same
US9316382B2 (en) 2013-01-31 2016-04-19 Cree, Inc. Connector devices, systems, and related methods for connecting light emitting diode (LED) modules
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9039746B2 (en) 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9565782B2 (en) 2013-02-15 2017-02-07 Ecosense Lighting Inc. Field replaceable power supply cartridge
US9055643B2 (en) 2013-03-13 2015-06-09 Cree, Inc. Solid state lighting apparatus and methods of forming
JP6309211B2 (ja) * 2013-06-14 2018-04-11 新電元工業株式会社 炭化ケイ素半導体装置
DE102013108583A1 (de) 2013-08-08 2015-03-05 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
US9240528B2 (en) 2013-10-03 2016-01-19 Cree, Inc. Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
US10477636B1 (en) 2014-10-28 2019-11-12 Ecosense Lighting Inc. Lighting systems having multiple light sources
WO2016073678A1 (en) 2014-11-06 2016-05-12 Koninklijke Philips N.V. Light emitting device with trench beneath a top contact
US10431568B2 (en) 2014-12-18 2019-10-01 Cree, Inc. Light emitting diodes, components and related methods
US11306897B2 (en) 2015-02-09 2022-04-19 Ecosense Lighting Inc. Lighting systems generating partially-collimated light emissions
US9869450B2 (en) 2015-02-09 2018-01-16 Ecosense Lighting Inc. Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector
US9651227B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Low-profile lighting system having pivotable lighting enclosure
US9746159B1 (en) 2015-03-03 2017-08-29 Ecosense Lighting Inc. Lighting system having a sealing system
US9568665B2 (en) 2015-03-03 2017-02-14 Ecosense Lighting Inc. Lighting systems including lens modules for selectable light distribution
US9651216B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Lighting systems including asymmetric lens modules for selectable light distribution
CN113130725A (zh) 2015-03-31 2021-07-16 科锐Led公司 具有包封的发光二极管和方法
WO2016176625A1 (en) 2015-04-30 2016-11-03 Cree, Inc. Solid state lighting components
USD785218S1 (en) 2015-07-06 2017-04-25 Ecosense Lighting Inc. LED luminaire having a mounting system
US10074635B2 (en) 2015-07-17 2018-09-11 Cree, Inc. Solid state light emitter devices and methods
USD782094S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782093S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
US9651232B1 (en) 2015-08-03 2017-05-16 Ecosense Lighting Inc. Lighting system having a mounting device
CN109791968A (zh) 2016-07-26 2019-05-21 克利公司 发光二极管、组件和相关方法
WO2018052902A1 (en) 2016-09-13 2018-03-22 Cree, Inc. Light emitting diodes, components and related methods
US10804251B2 (en) 2016-11-22 2020-10-13 Cree, Inc. Light emitting diode (LED) devices, components and methods
US10439114B2 (en) 2017-03-08 2019-10-08 Cree, Inc. Substrates for light emitting diodes and related methods
US10410997B2 (en) 2017-05-11 2019-09-10 Cree, Inc. Tunable integrated optics LED components and methods
EP3428975A1 (de) 2017-07-14 2019-01-16 AGC Glass Europe Lichtemittierende vorrichtungen mit antireflektierendem silicium-karbid- oder -saphirsubstrat und verfahren zur herstellung davon
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
US11107857B2 (en) 2017-08-18 2021-08-31 Creeled, Inc. Light emitting diodes, components and related methods
US11101248B2 (en) 2017-08-18 2021-08-24 Creeled, Inc. Light emitting diodes, components and related methods
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
CN109659220A (zh) * 2017-10-11 2019-04-19 中国科学院半导体研究所 激光辅助无掩膜高深宽比碳化硅深槽孔结构制备方法
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
US10734560B2 (en) 2017-11-29 2020-08-04 Cree, Inc. Configurable circuit layout for LEDs
DE102018107922A1 (de) * 2018-04-04 2019-10-10 Infineon Technologies Ag Verfahren zum Verarbeiten eines Siliciumcarbid enthaltenden kristallinen Substrats, Siliciumcarbidchip und Verarbeitungskammer
US10573543B2 (en) 2018-04-30 2020-02-25 Cree, Inc. Apparatus and methods for mass transfer of electronic die
US11024785B2 (en) 2018-05-25 2021-06-01 Creeled, Inc. Light-emitting diode packages
US10453827B1 (en) 2018-05-30 2019-10-22 Cree, Inc. LED apparatuses and methods
US11101410B2 (en) 2018-05-30 2021-08-24 Creeled, Inc. LED systems, apparatuses, and methods
EP3776674A1 (de) 2018-06-04 2021-02-17 Cree, Inc. Led-vorrichtungen und verfahren
JP6491784B1 (ja) * 2018-08-03 2019-03-27 株式会社日立パワーソリューションズ 単結晶炭化ケイ素基板、単結晶炭化ケイ素基板の製造方法、および半導体レーザ
US10964866B2 (en) 2018-08-21 2021-03-30 Cree, Inc. LED device, system, and method with adaptive patterns
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
CN110526205A (zh) * 2019-08-27 2019-12-03 西安交通大学 一种等离子体刻蚀辅助激光加工碳化硅的方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626141A (en) * 1970-04-30 1971-12-07 Quantronix Corp Laser scribing apparatus
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3866398A (en) * 1973-12-20 1975-02-18 Texas Instruments Inc In-situ gas-phase reaction for removal of laser-scribe debris
JPS5157283A (en) * 1974-11-15 1976-05-19 Nippon Electric Co Handotaikibanno bunkatsuhoho
NL7609815A (nl) * 1976-09-03 1978-03-07 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
JPS5916344A (ja) * 1982-07-19 1984-01-27 Toshiba Corp ウエハのレ−ザスクライブ装置
US4529829A (en) * 1982-11-24 1985-07-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4626613A (en) * 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
DE3506995A1 (de) * 1985-02-27 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von blaulicht-leds und anordnung zur durchfuehrung des verfahrens
US4783421A (en) * 1985-04-15 1988-11-08 Solarex Corporation Method for manufacturing electrical contacts for a thin-film semiconductor device
US4599134A (en) * 1985-06-10 1986-07-08 Ibm Corporation Plasma etching with tracer
FR2617979B1 (fr) * 1987-07-10 1989-11-10 Thomson Semiconducteurs Dispositif de detection de la depassivation d'un circuit integre
US4865685A (en) * 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
JP2650730B2 (ja) * 1988-08-08 1997-09-03 シャープ株式会社 炭化珪素半導体を用いたｐｎ接合型発光ダイオード
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
US4948461A (en) * 1989-10-16 1990-08-14 Eastman Kodak Company Dry-etching method and plasma
JPH07120646B2 (ja) * 1990-05-16 1995-12-20 株式会社東芝 メサ型半導体ペレットの製造方法
KR940005622B1 (ko) * 1991-10-22 1994-06-21 현대전자산업 주식회사 화합물 반도체의 광전기 화학적 식각장치
JPH0640797A (ja) * 1992-04-23 1994-02-15 Sumitomo Electric Ind Ltd ダイヤモンドの加工方法
JPH0645651A (ja) * 1992-05-22 1994-02-18 Sanyo Electric Co Ltd ｎ型ＳｉＣ用電極とその形成方法
JPH05330806A (ja) * 1992-05-26 1993-12-14 Sumitomo Electric Ind Ltd 立方晶窒化ホウ素の加工方法
JP2780744B2 (ja) * 1992-11-06 1998-07-30 信越半導体株式会社 ＧａＡｌＡｓ発光素子の製造方法
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
US5432808A (en) * 1993-03-15 1995-07-11 Kabushiki Kaisha Toshiba Compound semicondutor light-emitting device
US5387776A (en) * 1993-05-11 1995-02-07 General Electric Company Method of separation of pieces from super hard material by partial laser cut and pressure cleavage
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

Also Published As

Publication number Publication date
EP0786150B1 (de) 1998-12-16
AU3761295A (en) 1996-05-02
US5631190A (en) 1997-05-20
US5912477A (en) 1999-06-15
JPH11505666A (ja) 1999-05-21
DE69506734D1 (de) 1999-01-28
KR100369751B1 (ko) 2003-04-11
CN1092404C (zh) 2002-10-09
KR970706617A (ko) 1997-11-03
CN1163014A (zh) 1997-10-22
ATE174724T1 (de) 1999-01-15
WO1996011504A1 (en) 1996-04-18
EP0786150A1 (de) 1997-07-30

Similar Documents

Publication Publication Date Title
DE69506734D1 (de) Verfahren zum herstellen hocheffizienter leuchtdioden
SG2009061698A (en) Laser scriber for dicing of semiconductor wafers
MY134301A (en) Dicing method and dicing apparatus for dicing plate-like workpiece
ATE553404T1 (de) Durchsichtige leuchtglieder und herstellungsverfahren
ATE512751T1 (de) Laserbearbeitungsverfahren
MY127500A (en) Light emitting diodes including modifications for light extraction and manufacturing methods therefor
DE60117036D1 (de) Laserbearbeitung von halbleitermaterialen
ITTO20020670A1 (it) Dispositivo emettitore di luce comprendente allumina porosa e relativo procedimento di realizzazione
FR2647973B1 (fr) Lasers de puissance pompes par diodes lasers
DE69116038T2 (de) Oberflächenemittierender Halbleiterlaser
DE69601698T2 (de) Oberflächen-emittierender Halbleiterlaser
WO2002041362A3 (en) Laser separated die with tapered sidewalls for improved light extraction
TW350145B (en) Semiconductor light emitting device with high light emission efficiency
DE69811553D1 (de) Langwelliger oberflächenemittierender Halbleiterlaser mit vertikalem Resonator (VCSEL)
TW200740060A (en) Wafer testing of edge emitting lasers
JP2003088976A5 (de)
WO2004032292A3 (en) High performance vertically emitting lasers
CN108461396B (zh) 光器件晶片的加工方法
EP1504842A4 (de) Einen laserstrahl verwendende endbearbeitungsmaschine
EP0803943A3 (de) Oberflächenemittierende Diodenlasereinheit mit optischer Leistungsüberwachung
EP1732086A4 (de) Verarbeitungsvorrichtung für weiche röntgenstrahlen und verarbeitungsverfahren für weiche röntgenstrahlen
FR2671238B1 (fr) Procede de realisation de lasers semiconducteurs a emission de surface, et lasers obtenus par le procede.
MXPA05008050A (es) Dispositivo para el transporte en aire de recipientes de plastico equipados con un collarin saledizo.
WO2001042152A3 (de) Verfahren und vorrichtung zum durchtrennen von flachen werkstücken aus sprödbrüchigem material
ITMI991271A0 (it) Metodo e dispositivo per condizionare l'emissione luminosa di una schi era di diodi laser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition