DE69501163T2 - Moduliertes Spektralellipsometer - Google Patents

Moduliertes Spektralellipsometer

Info

Publication number
DE69501163T2
DE69501163T2 DE69501163T DE69501163T DE69501163T2 DE 69501163 T2 DE69501163 T2 DE 69501163T2 DE 69501163 T DE69501163 T DE 69501163T DE 69501163 T DE69501163 T DE 69501163T DE 69501163 T2 DE69501163 T2 DE 69501163T2
Authority
DE
Germany
Prior art keywords
spectral ellipsometer
modulated spectral
modulated
ellipsometer
spectral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69501163T
Other languages
English (en)
Other versions
DE69501163D1 (de
Inventor
Bernard Drevillon
Jean-Yves Parey
Razvigor Ossikovski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE69501163D1 publication Critical patent/DE69501163D1/de
Publication of DE69501163T2 publication Critical patent/DE69501163T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
DE69501163T 1994-01-12 1995-01-10 Moduliertes Spektralellipsometer Expired - Lifetime DE69501163T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9400285A FR2714970B1 (fr) 1994-01-12 1994-01-12 Ellipsomètre spectroscopique modulé.

Publications (2)

Publication Number Publication Date
DE69501163D1 DE69501163D1 (de) 1998-01-22
DE69501163T2 true DE69501163T2 (de) 1998-07-09

Family

ID=9458971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501163T Expired - Lifetime DE69501163T2 (de) 1994-01-12 1995-01-10 Moduliertes Spektralellipsometer

Country Status (5)

Country Link
US (1) US5536936A (de)
EP (1) EP0663590B1 (de)
JP (1) JP3782481B2 (de)
DE (1) DE69501163T2 (de)
FR (1) FR2714970B1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3286138B2 (ja) * 1995-08-03 2002-05-27 日東電工株式会社 導光板、面光源装置、偏光光源装置及び液晶表示装置
FR2737572B1 (fr) * 1995-08-03 1997-10-24 Centre Nat Rech Scient Ellipsometre multi-detecteurs et procede de mesure ellipsometrique multi-detecteurs
US6113733A (en) 1996-11-08 2000-09-05 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
US6849470B1 (en) 1996-11-08 2005-02-01 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
GB9626765D0 (en) * 1996-12-23 1997-02-12 Secr Defence In-situ monitoring of electrical properties by ellipsometry
WO1998048252A1 (en) 1997-04-22 1998-10-29 The Regents Of The University Of California Laser detection of material thickness
WO1999005488A1 (en) 1997-07-28 1999-02-04 Hinds Instruments, Inc. Measurement of waveplate retardation using a photoelastic modulator
JP4629869B2 (ja) 1998-02-20 2011-02-09 ハインズ インスツルメンツ インコーポレイテッド 複屈折特性測定方法および装置
FR2784749B1 (fr) 1998-10-14 2000-12-29 Instruments Sa Appareil de caracterisation optique de materiau en couche mince
AU4059200A (en) * 1999-03-31 2000-10-16 Hinds Instruments, Inc. Integrated diagnostic system for photoelastic modulator
US6268916B1 (en) 1999-05-11 2001-07-31 Kla-Tencor Corporation System for non-destructive measurement of samples
US6697157B2 (en) * 1999-05-24 2004-02-24 Hinds Instruments Birefringence measurement
US6268914B1 (en) 2000-01-14 2001-07-31 Hinds Instruments, Inc. Calibration Process For Birefringence Measurement System
US6535285B1 (en) 2000-02-08 2003-03-18 Therma-Wave, Inc. Combination thermal wave and optical spectroscopy measurement system
US7002685B2 (en) * 2000-03-31 2006-02-21 Hinds Instruments, Inc System for measuring of both circular and linear birefringence
DE10056768B4 (de) * 2000-11-14 2004-08-26 Stephan la Barré Verfahren und Vorrichtung zur Messung von Eigenschaften einer Probe mit Meßsignal-Modulation
WO2002103310A1 (en) * 2001-06-18 2002-12-27 Hinds Instruments, Inc Birefringence measurement at deep-ultraviolet wavelengths
EP1446641A4 (de) * 2001-10-15 2009-01-07 Xiangdong Zhu Verfahren und vorrichtungen zur messung des brechnungsindex und optischer absorptionsdifferenzen
US6963402B2 (en) * 2003-05-22 2005-11-08 Chism Ii William W Polarization modulation photoreflectance characterization of semiconductor quantum confined structures
US7239392B2 (en) 2003-05-22 2007-07-03 Xitronix Corporation Polarization modulation photoreflectance characterization of semiconductor electronic interfaces
US20060114478A1 (en) * 2004-11-26 2006-06-01 Applied Materials, Inc. Evaluating effects of tilt angle in ion implantation
WO2007050570A2 (en) * 2005-10-27 2007-05-03 Xitronix Corporation Method of photo-reflectance characterization of strain and active dopant in semiconductor structures
JP2009047685A (ja) * 2007-07-25 2009-03-05 Keio Gijuku 光弾性測定方法およびその装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211488A (en) * 1978-10-03 1980-07-08 Rca Corporation Optical testing of a semiconductor
US4632561A (en) * 1985-04-30 1986-12-30 Therma-Wave, Inc. Evaluation of surface and subsurface characteristics of a sample
US5329357A (en) * 1986-03-06 1994-07-12 Sopra-Societe De Production Et De Recherches Appliquees Spectroscopic ellipsometry apparatus including an optical fiber
US4866264A (en) * 1988-10-31 1989-09-12 Northrop Corporation Method and apparatus for measuring non-reciprocal loss of thin magnetic films and magnetic mirrors
FR2685962B1 (fr) * 1992-01-07 1994-05-20 Centre Nal Recherc Scientifique Ellipsometre infrarouge.

Also Published As

Publication number Publication date
FR2714970A1 (fr) 1995-07-13
US5536936A (en) 1996-07-16
JPH0850058A (ja) 1996-02-20
JP3782481B2 (ja) 2006-06-07
EP0663590B1 (de) 1997-12-10
EP0663590A1 (de) 1995-07-19
DE69501163D1 (de) 1998-01-22
FR2714970B1 (fr) 1996-03-29

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Legal Events

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