DE69433993D1 - Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler - Google Patents

Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler

Info

Publication number
DE69433993D1
DE69433993D1 DE69433993T DE69433993T DE69433993D1 DE 69433993 D1 DE69433993 D1 DE 69433993D1 DE 69433993 T DE69433993 T DE 69433993T DE 69433993 T DE69433993 T DE 69433993T DE 69433993 D1 DE69433993 D1 DE 69433993D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
control method
photoelectric
converter
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69433993T
Other languages
English (en)
Other versions
DE69433993T2 (de
Inventor
Noriyuki Kaifu
Hidemasa Mizutani
Shinichi Takeda
Isao Kobayashi
Satoshi Itabashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69433993D1 publication Critical patent/DE69433993D1/de
Application granted granted Critical
Publication of DE69433993T2 publication Critical patent/DE69433993T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
DE69433993T 1993-12-27 1994-12-27 Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler Expired - Lifetime DE69433993T2 (de)

Applications Claiming Priority (20)

Application Number Priority Date Filing Date Title
JP33169093 1993-12-27
JP33169093 1993-12-27
JP19667094 1994-08-22
JP19664094 1994-08-22
JP19664594 1994-08-22
JP19664594 1994-08-22
JP19664394 1994-08-22
JP19664394 1994-08-22
JP19664194 1994-08-22
JP19664894 1994-08-22
JP19664294 1994-08-22
JP19664194 1994-08-22
JP19664494 1994-08-22
JP19664894 1994-08-22
JP19664294 1994-08-22
JP19664494 1994-08-22
JP19667094 1994-08-22
JP19664094 1994-08-22
JP6313392A JP3066944B2 (ja) 1993-12-27 1994-12-16 光電変換装置、その駆動方法及びそれを有するシステム
JP31339294 1994-12-16

Publications (2)

Publication Number Publication Date
DE69433993D1 true DE69433993D1 (de) 2004-10-21
DE69433993T2 DE69433993T2 (de) 2005-09-22

Family

ID=27580393

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69433993T Expired - Lifetime DE69433993T2 (de) 1993-12-27 1994-12-27 Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler

Country Status (4)

Country Link
US (7) US6075256A (de)
EP (4) EP0660421B9 (de)
JP (1) JP3066944B2 (de)
DE (1) DE69433993T2 (de)

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
US5912465A (en) 1995-09-05 1999-06-15 Canon Kabushiki Kaisha Photoelectric converter
JP3183390B2 (ja) 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
JP4750878B2 (ja) * 1995-09-05 2011-08-17 キヤノン株式会社 光電変換装置及び放射線撮像装置
JP4557763B2 (ja) * 1995-09-05 2010-10-06 キヤノン株式会社 光電変換装置及び放射線撮像装置
JPH1056180A (ja) * 1995-09-29 1998-02-24 Canon Inc 半導体装置及びその製造方法
JP3618945B2 (ja) 1996-02-21 2005-02-09 キヤノン株式会社 基板の切断方法及び基板切断装置
JP3957803B2 (ja) * 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
JP3897389B2 (ja) * 1996-02-22 2007-03-22 キヤノン株式会社 光電変換装置の駆動方法及び光電変換装置
US6690493B1 (en) 1996-02-22 2004-02-10 Canon Kabushiki Kaisha Photoelectric conversion device and driving method therefor
JP3880094B2 (ja) * 1996-02-22 2007-02-14 キヤノン株式会社 放射線検出装置及びその製造方法
JP3893181B2 (ja) * 1996-02-26 2007-03-14 キヤノン株式会社 放射線撮像装置及び該装置の駆動方法
US6448561B1 (en) 1996-02-26 2002-09-10 Canon Kabushiki Kaisha Photoelectric conversion apparatus and driving method of the apparatus
US6127684A (en) * 1996-02-26 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus and driving method of the apparatus
US6271880B1 (en) 1996-02-26 2001-08-07 Canon Kabushiki Kaisha Apparatus having a photoelectric conversion element and a transistor, in which the duration of the on time of the transistor is based on a detected temperature of the conversion element or transistor
JP4654321B2 (ja) * 1996-03-13 2011-03-16 キヤノン株式会社 光電変換装置、ｘ線撮像装置、及び該装置を有するシステム
JP4597171B2 (ja) * 1996-03-13 2010-12-15 キヤノン株式会社 光電変換装置、ｘ線撮像装置、及び該装置を有するシステム
JP3984676B2 (ja) * 1996-03-26 2007-10-03 キヤノン株式会社 光電変換装置、及び該装置を有するシステム
JP4100739B2 (ja) * 1996-10-24 2008-06-11 キヤノン株式会社 光電変換装置
JP3416432B2 (ja) * 1996-12-24 2003-06-16 キヤノン株式会社 光電変換装置及びその駆動方法
JP3667058B2 (ja) * 1997-11-19 2005-07-06 キヤノン株式会社 光電変換装置
JPH11307756A (ja) 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
JPH11331703A (ja) * 1998-03-20 1999-11-30 Toshiba Corp 撮像装置
JP4011734B2 (ja) 1998-06-02 2007-11-21 キヤノン株式会社 ２次元光センサ、それを用いた放射線検出装置及び放射線診断システム
US6420691B1 (en) * 1998-07-08 2002-07-16 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Charge-coupled device for low background observations
JP4311693B2 (ja) 1998-07-30 2009-08-12 キヤノン株式会社 光電変換装置及びそのリペア方法、それを用いたｘ線撮像システム
JP3604968B2 (ja) 1998-08-31 2004-12-22 キヤノン株式会社 放射線撮影装置
JP2000131444A (ja) 1998-10-28 2000-05-12 Canon Inc 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法
US6414318B1 (en) * 1998-11-06 2002-07-02 Bridge Semiconductor Corporation Electronic circuit
JP2002529742A (ja) * 1998-11-06 2002-09-10 オンガード システムズ，インク． 電子回路
EP2287917B1 (de) 1999-02-25 2016-05-25 Canon Kabushiki Kaisha Lichtempfangendes Element und photoelektrische Umwandlungsanordnung
US6885404B1 (en) 1999-06-30 2005-04-26 Canon Kabushiki Kaisha Image pickup apparatus
US6980248B1 (en) 1999-06-30 2005-12-27 Canon Kabushiki Kaisha Image pickup apparatus
US6882368B1 (en) 1999-06-30 2005-04-19 Canon Kabushiki Kaisha Image pickup apparatus
US6833873B1 (en) 1999-06-30 2004-12-21 Canon Kabushiki Kaisha Image pickup apparatus
US6859229B1 (en) 1999-06-30 2005-02-22 Canon Kabushiki Kaisha Image pickup apparatus
US6489618B1 (en) * 1999-07-30 2002-12-03 Canon Kabushiki Kaisha Radiation image pickup device
JP2001074845A (ja) 1999-09-03 2001-03-23 Canon Inc 半導体装置及びそれを用いた放射線撮像システム
US6450684B2 (en) 1999-12-24 2002-09-17 Canon Kabushiki Kaisha Radiographic apparatus, radiographic table and radiographic system
US6928145B2 (en) 2000-02-01 2005-08-09 Canon Kabushiki Kaisha Radiographic apparatus
JP4508335B2 (ja) * 2000-02-01 2010-07-21 キヤノン株式会社 放射線撮影装置
US6855935B2 (en) 2000-03-31 2005-02-15 Canon Kabushiki Kaisha Electromagnetic wave detector
US6717151B2 (en) * 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
US6800836B2 (en) * 2000-07-10 2004-10-05 Canon Kabushiki Kaisha Image pickup device, radiation image pickup device and image processing system
TW449929B (en) * 2000-08-02 2001-08-11 Ind Tech Res Inst Structure and manufacturing method of amorphous-silicon thin film transistor array
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
JP3588053B2 (ja) * 2001-02-07 2004-11-10 シャープ株式会社 電磁波検出器
JP3610348B2 (ja) 2001-08-27 2005-01-12 キヤノン株式会社 カセッテ型撮像装置及び放射線撮影装置
JP4500488B2 (ja) * 2001-11-13 2010-07-14 キヤノン株式会社 放射線検出装置及びその駆動方法、光電変換装置
US7034309B2 (en) * 2001-11-13 2006-04-25 Canon Kabushiki Kaisha Radiation detecting apparatus and method of driving the same
EP2629509B1 (de) 2002-03-01 2018-08-08 Canon Kabushiki Kaisha Strahlungsbilderfassungsvorrichtung und Ansteuerverfahren dafür
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
US7214945B2 (en) * 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
EP1388740B1 (de) * 2002-08-09 2014-11-05 Canon Kabushiki Kaisha Vorrichtung und Verfahren zur Strahlungsabbildung
US7148487B2 (en) 2002-08-27 2006-12-12 Canon Kabushiki Kaisha Image sensing apparatus and method using radiation
JP4393048B2 (ja) * 2002-09-11 2010-01-06 キヤノン株式会社 放射線変換基板、放射線撮影装置および放射線撮影システム
JP2004166923A (ja) 2002-11-19 2004-06-17 Canon Inc Ｘ線コンピューター断層撮影装置
US7154100B2 (en) * 2002-12-13 2006-12-26 Konstantinos Spartiotis Switching/depolarizing power supply for a radiation imaging device
JP4217505B2 (ja) * 2003-02-28 2009-02-04 キヤノン株式会社 撮像装置及びｘ線撮像装置
JP5140235B2 (ja) * 2003-03-19 2013-02-06 富士通セミコンダクター株式会社 半導体装置
KR100459512B1 (ko) * 2003-04-11 2004-12-03 학교법인 인제학원 대면적 디지털 엑스레이 이미지 디텍터
JP4307138B2 (ja) 2003-04-22 2009-08-05 キヤノン株式会社 光電変換装置、及び光電変換装置の制御方法
JP2004344249A (ja) * 2003-05-20 2004-12-09 Canon Inc 放射線撮影装置、放射線撮影方法、放射線撮影プログラム及び記録媒体
JP4412704B2 (ja) 2003-06-09 2010-02-10 キヤノン株式会社 画像処理方法および装置並びにｘ線撮影装置
DE602004000379T2 (de) 2003-06-18 2006-10-19 Canon K.K. Vorrichtung und Verfahren für Röntgenaufnahmen
JP2005012049A (ja) * 2003-06-20 2005-01-13 Shimadzu Corp 放射線検出器およびそれを備えた放射線撮像装置
JP4659341B2 (ja) 2003-06-23 2011-03-30 キヤノン株式会社 Ｘ線撮影装置
JP4603823B2 (ja) 2003-10-14 2010-12-22 キヤノン株式会社 放射線撮像装置、放射線撮像方法及びプログラム
JP4533010B2 (ja) 2003-11-20 2010-08-25 キヤノン株式会社 放射線撮像装置、放射線撮像方法及び放射線撮像システム
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
CN100534151C (zh) * 2003-11-21 2009-08-26 佳能株式会社 放射线图像摄取装置和方法,以及放射线图像摄取系统
JP4307230B2 (ja) 2003-12-05 2009-08-05 キヤノン株式会社 放射線撮像装置及び放射線撮像方法
JP4441294B2 (ja) * 2004-03-12 2010-03-31 キヤノン株式会社 放射線撮像装置及びその制御方法
JP4469638B2 (ja) 2004-03-12 2010-05-26 キヤノン株式会社 読み出し装置及び画像撮影装置
JP4307322B2 (ja) 2004-05-18 2009-08-05 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP4845352B2 (ja) * 2004-06-15 2011-12-28 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線撮像システム
US7208810B2 (en) * 2004-07-01 2007-04-24 Varian Medical Technologies, Inc. Integrated MIS photosensitive device using continuous films
US8067813B2 (en) * 2004-07-01 2011-11-29 Varian Medical Systems Technologies, Inc. Integrated MIS photosensitive device using continuous films
WO2006014764A2 (en) 2004-07-20 2006-02-09 Medtronic, Inc. Implantable cerebral spinal fluid drainage device and method of draining cerebral spinal fluid
US7282719B2 (en) 2004-09-30 2007-10-16 Canon Kabushiki Kaisha Image pickup apparatus and radiation image pickup apparatus
US7557355B2 (en) 2004-09-30 2009-07-07 Canon Kabushiki Kaisha Image pickup apparatus and radiation image pickup apparatus
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
WO2006051994A2 (en) * 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Light-emitting device
US7868326B2 (en) * 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7233005B2 (en) * 2005-02-16 2007-06-19 Hologic, Inc. Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
EP1724844A2 (de) 2005-05-20 2006-11-22 Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandlungsvorrichtung, Herstellungsverfahren und Halbleitervorrichtung
JP5058517B2 (ja) 2005-06-14 2012-10-24 キヤノン株式会社 放射線撮像装置及びその制御方法並びに放射線撮像システム
JP5043374B2 (ja) * 2005-07-11 2012-10-10 キヤノン株式会社 変換装置、放射線検出装置、及び放射線検出システム
JP5207583B2 (ja) * 2005-07-25 2013-06-12 キヤノン株式会社 放射線検出装置および放射線検出システム
US20070041063A1 (en) * 2005-08-18 2007-02-22 Matsushita Electric Industrial Co., Ltd. Image sensor
JP2007104219A (ja) 2005-10-03 2007-04-19 Canon Inc 放射線撮影装置及びその制御方法、放射線撮影システム
JP4810182B2 (ja) 2005-10-17 2011-11-09 キヤノン株式会社 放射線撮影装置
JP2007123721A (ja) * 2005-10-31 2007-05-17 Rohm Co Ltd 光電変換装置の製造方法および光電変換装置
JP4834518B2 (ja) 2005-11-29 2011-12-14 キヤノン株式会社 放射線撮像装置、その制御方法、及びそれを実行させるためのプログラムを記録した記録媒体
JP2007153702A (ja) 2005-12-07 2007-06-21 Canon Inc 亜鉛とタングステンからなる三斜晶系構造の複合酸化物および発光体
JP4850730B2 (ja) 2006-03-16 2012-01-11 キヤノン株式会社 撮像装置、その処理方法及びプログラム
JP4858540B2 (ja) * 2006-03-24 2012-01-18 コニカミノルタエムジー株式会社 光電変換装置及び放射線像撮像装置
JP5173234B2 (ja) * 2006-05-24 2013-04-03 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP5196739B2 (ja) 2006-06-09 2013-05-15 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
JP4989120B2 (ja) 2006-06-16 2012-08-01 キヤノン株式会社 放射線撮像システム及びその駆動方法
JP5159161B2 (ja) 2006-06-26 2013-03-06 キヤノン株式会社 放射線撮像装置、放射線撮像システム及びその制御方法
JP2008042478A (ja) * 2006-08-04 2008-02-21 Canon Inc 撮像装置、放射線撮像装置、及びその駆動方法
US20080308585A1 (en) * 2006-09-27 2008-12-18 John Foley Nozzle
JP2008227000A (ja) * 2007-03-09 2008-09-25 Fujifilm Corp 放射線撮像素子
JP5107747B2 (ja) * 2007-03-09 2012-12-26 富士フイルム株式会社 放射線画像検出器
JP5408842B2 (ja) * 2007-04-27 2014-02-05 キヤノン株式会社 発光装置およびその製造方法
JP2008306080A (ja) * 2007-06-11 2008-12-18 Hitachi Ltd 光センサ素子、およびこれを用いた光センサ装置、画像表示装置
US7572057B2 (en) 2007-06-21 2009-08-11 Canon Kabushiki Kaisha Radiography control apparatus and radiography control method
US7608832B2 (en) * 2007-06-26 2009-10-27 Fujifilm Corporation Image detection device and method of driving image detector
JP5406473B2 (ja) * 2007-07-19 2014-02-05 キヤノン株式会社 放射線検出装置
JP5235348B2 (ja) 2007-07-26 2013-07-10 富士フイルム株式会社 放射線撮像素子
JP5171178B2 (ja) * 2007-09-13 2013-03-27 富士フイルム株式会社 イメージセンサ及びその製造方法
US8008627B2 (en) 2007-09-21 2011-08-30 Fujifilm Corporation Radiation imaging element
JP5032276B2 (ja) 2007-11-19 2012-09-26 株式会社東芝 放射線検出装置
JP5305387B2 (ja) * 2007-12-25 2013-10-02 セイコーインスツル株式会社 光検出装置、及び画像表示装置
JPWO2009081971A1 (ja) * 2007-12-25 2011-05-06 セイコーインスツル株式会社 光検出装置、及び画像表示装置
JP2009231643A (ja) * 2008-03-24 2009-10-08 Casio Comput Co Ltd 光感知素子及びフォトセンサ並びに表示装置
JP2009267025A (ja) * 2008-04-24 2009-11-12 Konica Minolta Holdings Inc 光センサ、光センサアレイ、撮像素子および撮像装置
CN101574262B (zh) * 2008-05-09 2013-03-20 Ge医疗系统环球技术有限公司 X射线探测设备和x射线成像装置
JP4546560B2 (ja) * 2008-05-23 2010-09-15 キヤノン株式会社 放射線撮像装置、その駆動方法及び放射線撮像システム
WO2009150794A1 (ja) * 2008-06-13 2009-12-17 ローム株式会社 モータ駆動回路
WO2009154953A2 (en) * 2008-06-20 2009-12-23 Carl Zeiss Smt Inc. Sample inspection methods, systems and components
KR101322137B1 (ko) * 2008-06-24 2013-10-25 엘지디스플레이 주식회사 액정표시장치
JP2010104581A (ja) 2008-10-30 2010-05-13 Canon Inc Ｘ線撮影装置及びｘ線撮影方法
JP5377081B2 (ja) * 2009-06-01 2013-12-25 キヤノン株式会社 放射線撮影装置及びその制御方法
JP5222240B2 (ja) * 2009-07-09 2013-06-26 株式会社ジャパンディスプレイイースト 光センサ回路、および光センサアレイ
JP5438424B2 (ja) 2009-07-31 2014-03-12 キヤノン株式会社 医用画像撮影装置およびその撮影方法
JP5512228B2 (ja) * 2009-10-30 2014-06-04 株式会社東芝 放射線検出装置
JP5580573B2 (ja) 2009-11-09 2014-08-27 キヤノン株式会社 制御装置、放射線撮影システム、制御方法、管理方法、及びプログラム
EP2564779B1 (de) * 2010-04-30 2017-08-30 Konica Minolta Medical & Graphic, Inc. Vorrichtung zur aufnahme von röntgenbildern
JP5548528B2 (ja) * 2010-06-09 2014-07-16 キヤノン株式会社 Ｘ線撮影装置及びその制御方法、プログラム
JP5745369B2 (ja) 2010-09-06 2015-07-08 株式会社半導体エネルギー研究所 電子機器
WO2012098801A1 (ja) * 2011-01-17 2012-07-26 浜松ホトニクス株式会社 固体撮像装置
JP2015025682A (ja) 2013-07-24 2015-02-05 キヤノン株式会社 放射線撮影装置
JP6438408B2 (ja) 2013-10-24 2018-12-12 キヤノン株式会社 情報処理装置、情報処理方法、制御装置、制御システム、制御方法、トモシンセシス撮影装置、ｘ線撮影装置、画像処理装置、画像処理システム、画像処理方法、及び、コンピュータプログラム
JP6577700B2 (ja) 2014-06-30 2019-09-18 キヤノン株式会社 放射線検出装置、その制御方法、放射線撮影装置、およびプログラム
JP6494207B2 (ja) * 2014-07-31 2019-04-03 キヤノン株式会社 光電変換装置、光電変換システム、光電変換装置の駆動方法
JP6501462B2 (ja) 2014-08-08 2019-04-17 キヤノン株式会社 光電変換装置及び光電変換装置の駆動方法
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6555867B2 (ja) * 2014-09-26 2019-08-07 キヤノン株式会社 撮像装置
JP6727831B2 (ja) 2016-02-09 2020-07-22 キヤノン株式会社 光電変換装置、および、撮像システム
JP7000020B2 (ja) * 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
DE102017204027A1 (de) * 2017-03-10 2018-09-13 Siemens Healthcare Gmbh Röntgendetektor mit Spannungsquellenvorrichtung zum Erzeugen einer gepulsten Potentialdifferenz
JP7088686B2 (ja) * 2018-02-15 2022-06-21 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 イメージセンサ及びイメージセンサの駆動方法
JP6783839B2 (ja) * 2018-10-18 2020-11-11 キヤノン株式会社 光電変換装置、および、撮像システム
CN112083470B (zh) * 2020-09-02 2023-11-24 重庆中易智芯科技有限责任公司 一种阻态敏感CdZnTe辐射探测器及其制造方法

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US576009A (en) * 1897-01-26 Hose-reel
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
GB1529342A (en) * 1975-04-08 1978-10-18 Post Office Display drive circuits
US4004148A (en) * 1976-02-02 1977-01-18 General Electric Company Accumulation mode charge injection infrared sensor
US4341954A (en) * 1980-02-06 1982-07-27 Nippon Telegraph & Telephone Public Corp. Photo-electric converting apparatus
US4383327A (en) 1980-12-01 1983-05-10 University Of Utah Radiographic systems employing multi-linear arrays of electronic radiation detectors
FR2517864A1 (fr) * 1981-12-07 1983-06-10 Telecommunications Sa Dispositif d'enregistrement et de lecture d'images
US4575638A (en) * 1982-05-04 1986-03-11 Nec Corporation Thin film photoelectric converting device
JPS60119100A (ja) * 1983-11-30 1985-06-26 Toshiba Corp Ｘ線装置
US4672454A (en) 1984-05-04 1987-06-09 Energy Conversion Devices, Inc. X-ray image scanner and method
US4675739A (en) * 1984-05-04 1987-06-23 Energy Conversion Devices, Inc. Integrated radiation sensing array
US4689487A (en) 1984-09-03 1987-08-25 Kabushiki Kaisha Toshiba Radiographic image detection apparatus
GB2174492A (en) 1985-04-29 1986-11-05 Philips Nv X-ray examination system and method of controlling an exposure therein
JPH0812932B2 (ja) * 1985-12-06 1996-02-07 キヤノン株式会社 フォトセンサアレイ
US5043582A (en) * 1985-12-11 1991-08-27 General Imagining Corporation X-ray imaging system and solid state detector therefor
US5220170A (en) * 1985-12-11 1993-06-15 General Imaging Corporation X-ray imaging system and solid state detector therefor
FR2598250B1 (fr) 1986-04-30 1988-07-08 Thomson Csf Panneau de prise de vue radiologique, et procede de fabrication
JP2584774B2 (ja) * 1987-06-12 1997-02-26 キヤノン株式会社 密着型光電変換装置
EP0296603A3 (de) * 1987-06-26 1989-02-08 Canon Kabushiki Kaisha Photoelektrischer Umwandler
JPS6415970A (en) * 1987-07-09 1989-01-19 Canon Kk Image reading equipment
AU609508B2 (en) * 1987-08-20 1991-05-02 Canon Kabushiki Kaisha Photosensor device
FR2623019B1 (fr) * 1987-11-10 1990-05-11 Thomson Csf Dispositif de prise d'image radiologique
US5225706A (en) * 1987-12-04 1993-07-06 Thomson-Csf Matrix of photosensitive elements associating a photodiode or a phototransistor and a storage capacitor
JPH01161251A (ja) * 1987-12-18 1989-06-23 Fujitsu Ltd 電子写真感光体
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
DE68924481T2 (de) * 1989-01-20 1996-05-02 Kanegafuchi Chemical Ind Vorrichtung zur Untersuchung der Röntgenstrahlung.
US5262649A (en) * 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
DE4002431A1 (de) 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
US5146303A (en) 1990-04-05 1992-09-08 General Electric Company Compact, thermally efficient focal plane array and testing and repair thereof
US5187369A (en) * 1990-10-01 1993-02-16 General Electric Company High sensitivity, high resolution, solid state x-ray imaging device with barrier layer
US5142557A (en) * 1990-12-21 1992-08-25 Photometrics Ltd. CCD and phosphor screen digital radiology apparatus and method for high resolution mammography
JPH04239869A (ja) * 1991-01-23 1992-08-27 Kanegafuchi Chem Ind Co Ltd イメージセンサユニット
US5680229A (en) 1991-03-27 1997-10-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus with band gap variation in the thickness direction
EP0523784A1 (de) * 1991-07-15 1993-01-20 Philips Electronics Uk Limited Bildgebender Detektor und Methode seiner Herstellung
JP3006216B2 (ja) * 1991-09-05 2000-02-07 富士ゼロックス株式会社 ２次元密着型イメージセンサ及びその駆動方法
JP3189990B2 (ja) * 1991-09-27 2001-07-16 キヤノン株式会社 電子回路装置
US5331166A (en) * 1991-10-25 1994-07-19 Kabushiki Kaisha Morita Seisakusho Dental X-ray image detecting device with an automatic exposure function
JP3691077B2 (ja) 1992-01-08 2005-08-31 浜松ホトニクス株式会社 放射線検出素子およびその製造方法
GB9202693D0 (en) * 1992-02-08 1992-03-25 Philips Electronics Uk Ltd A method of manufacturing a large area active matrix array
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5661309A (en) * 1992-12-23 1997-08-26 Sterling Diagnostic Imaging, Inc. Electronic cassette for recording X-ray images
JP3431228B2 (ja) * 1993-09-21 2003-07-28 株式会社東芝 荷電粒子検出装置及び荷電粒子照射装置
US5376009A (en) * 1993-10-29 1994-12-27 The Whitaker Corporation Electrical connector for flexible circuit substrate
US5436458A (en) * 1993-12-06 1995-07-25 Minnesota Mining And Manufacturing Company Solid state radiation detection panel having tiled photosensitive detectors arranged to minimize edge effects between tiles
JP3066944B2 (ja) * 1993-12-27 2000-07-17 キヤノン株式会社 光電変換装置、その駆動方法及びそれを有するシステム
JPH07236029A (ja) * 1993-12-29 1995-09-05 Xerox Corp コンパクト・ドキュメント・イメージャ
US5381014B1 (en) * 1993-12-29 1997-06-10 Du Pont Large area x-ray imager and method of fabrication
JP3183390B2 (ja) * 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
TW594947B (en) * 2001-10-30 2004-06-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
EP0660421B9 (de) 2005-07-20
EP1453101A2 (de) 2004-09-01
EP1465259A2 (de) 2004-10-06
EP2287911A2 (de) 2011-02-23
USRE42157E1 (en) 2011-02-22
US6512279B2 (en) 2003-01-28
US7022997B2 (en) 2006-04-04
EP1465259A3 (de) 2010-03-03
JP3066944B2 (ja) 2000-07-17
EP2287911A3 (de) 2011-05-04
DE69433993T2 (de) 2005-09-22
USRE39780E1 (en) 2007-08-21
US6075256A (en) 2000-06-13
EP0660421A2 (de) 1995-06-28
US20010050402A1 (en) 2001-12-13
EP1453101A3 (de) 2010-03-03
US20020167061A1 (en) 2002-11-14
US20060027758A1 (en) 2006-02-09
US20040159901A1 (en) 2004-08-19
JPH08116044A (ja) 1996-05-07
EP0660421A3 (de) 1997-11-05
EP0660421B1 (de) 2004-09-15
US6982422B2 (en) 2006-01-03

Similar Documents

Publication Publication Date Title
DE69433993D1 (de) Photoelektrischer Umwandler, sein Steuerverfahren und System mit diesem photoelektrischen Umwandler
DE69011767T2 (de) Schreitroboter mit Beinen und System zu seiner Steuerung.
DE69425247D1 (de) Fernbedienungsteuerungssystem, beleuchtungssystem und filter
DE69401624T2 (de) Abgasreinigungssystem und Abgasreinigungsverfahren
DE69425782T2 (de) Hyterosalpingographie und selektive Salpingographie
DE69721829D1 (de) Einsatzstruktur mit feldsteuerungsring
DE69740088D1 (de) Photoelektrische Umwandlungsvorrichtung und Steuerverfahren dafür
DE69511849T2 (de) Automatische wetterüberwachung und adaptives übertragungssystem
FI963135A (fi) Köysikahmarin ohjausjärjestelmä
DE69714686D1 (de) Passivstrahler und system mit diesem passivstrahler
DE69731341D1 (de) Optisches Bauelement und optisches System mit diesem
DE69714347T2 (de) Aufzugssystem mit Gruppensteuerung
DE59300601D1 (de) Konischer wabenkörper.
NO974372L (no) Brönnstyringssystemer med nettverk nede i brönnen
DE69320709D1 (de) Photoelektrischer Wandler und Steuerverfahren dafür
BR9305038A (pt) Sistema de mudança de velocidade, sistema de sobremarcha e sistema controlador de mudança de velocidade
EP0804959A4 (de) Abgasentgiftungskatalysator und abgasentgiftungsmethode zu seiner verwendung
DE69835551D1 (de) Übertragungssteuerungssystem und -Verfahren
FI920620A0 (fi) Menetelmä tehostaa kolmitoimikatalysaattorin toimintaa
BR8907409A (pt) Sistema de televisao a cabo,controlador e controlador de recapitulacao para o mesmo
DE69705002T2 (de) Laststeuersystem
BR9204588A (pt) Metodo de acionamento de fechadura,fechadura e cadeado
FI970219A (fi) Katalyytti, sen käyttö, sekä menetelmä sen valmistamiseksi
ATA255093A (de) Wandlerschaltung
ES1020228Y (es) Dispositivo tensor-retenedor de cuerdas y similares.