DE69428399D1 - Verfahren zur Herstellung von ohmschen Kontakten für eine komplementäre Halbleiteranordnung - Google Patents
Verfahren zur Herstellung von ohmschen Kontakten für eine komplementäre HalbleiteranordnungInfo
- Publication number
- DE69428399D1 DE69428399D1 DE69428399T DE69428399T DE69428399D1 DE 69428399 D1 DE69428399 D1 DE 69428399D1 DE 69428399 T DE69428399 T DE 69428399T DE 69428399 T DE69428399 T DE 69428399T DE 69428399 D1 DE69428399 D1 DE 69428399D1
- Authority
- DE
- Germany
- Prior art keywords
- ohmic contacts
- semiconductor arrangement
- complementary semiconductor
- producing ohmic
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/083,751 US5444016A (en) | 1993-06-25 | 1993-06-25 | Method of making ohmic contacts to a complementary III-V semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69428399D1 true DE69428399D1 (de) | 2001-10-31 |
DE69428399T2 DE69428399T2 (de) | 2002-07-04 |
Family
ID=22180464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69428399T Expired - Fee Related DE69428399T2 (de) | 1993-06-25 | 1994-06-23 | Verfahren zur Herstellung von ohmschen Kontakten für eine komplementäre Halbleiteranordnung |
Country Status (3)
Country | Link |
---|---|
US (1) | US5444016A (de) |
EP (1) | EP0631324B1 (de) |
DE (1) | DE69428399T2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
US5940695A (en) * | 1996-10-11 | 1999-08-17 | Trw Inc. | Gallium antimonide complementary HFET |
US5827753A (en) * | 1997-03-20 | 1998-10-27 | Motorola, Inc. | Monolithic integration of driver circuits with LED array and methods of manufacture |
JP3109449B2 (ja) * | 1997-04-25 | 2000-11-13 | 日本電気株式会社 | 多層配線構造の形成方法 |
US6329063B2 (en) * | 1998-12-11 | 2001-12-11 | Nova Crystals, Inc. | Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6528405B1 (en) | 2000-02-18 | 2003-03-04 | Motorola, Inc. | Enhancement mode RF device and fabrication method |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6462360B1 (en) | 2001-08-06 | 2002-10-08 | Motorola, Inc. | Integrated gallium arsenide communications systems |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US7504677B2 (en) * | 2005-03-28 | 2009-03-17 | Freescale Semiconductor, Inc. | Multi-gate enhancement mode RF switch and bias arrangement |
US8283653B2 (en) | 2009-12-23 | 2012-10-09 | Intel Corporation | Non-planar germanium quantum well devices |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3684930A (en) * | 1970-12-28 | 1972-08-15 | Gen Electric | Ohmic contact for group iii-v p-types semiconductors |
DE2359640C2 (de) * | 1973-11-30 | 1983-09-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrischer Anschlußkontakt an einen Halbleiterkörper und Verwendung |
US4188710A (en) * | 1978-08-11 | 1980-02-19 | The United States Of America As Represented By The Secretary Of The Navy | Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films |
US4313971A (en) * | 1979-05-29 | 1982-02-02 | Rca Corporation | Method of fabricating a Schottky barrier contact |
JPS5984580A (ja) * | 1982-11-08 | 1984-05-16 | Nippon Telegr & Teleph Corp <Ntt> | 超短ゲ−ト電界効果トランジスタ |
US4540446A (en) * | 1983-09-19 | 1985-09-10 | Oki Electric Industry Co., Ltd. | Method of forming ohmic contact on GaAs by Ge film and implanting impurity ions therethrough |
US4712291A (en) * | 1985-06-06 | 1987-12-15 | The United States Of America As Represented By The Secretary Of The Air Force | Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs |
US4729000A (en) * | 1985-06-21 | 1988-03-01 | Honeywell Inc. | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates |
DE3682119D1 (de) * | 1985-06-21 | 1991-11-28 | Honeywell Inc | Komplementaere ic-struktur mit hoher steilheit. |
JPS62149138A (ja) * | 1985-12-23 | 1987-07-03 | Nec Corp | 半導体装置の製造方法 |
JPS62149125A (ja) * | 1985-12-23 | 1987-07-03 | Nec Corp | 半導体装置の製造方法 |
US5214298A (en) * | 1986-09-30 | 1993-05-25 | Texas Instruments Incorporated | Complementary heterostructure field effect transistors |
JPS6395620A (ja) * | 1986-10-09 | 1988-04-26 | Mitsubishi Electric Corp | オ−ミツク電極形成法 |
US4746627A (en) * | 1986-10-30 | 1988-05-24 | Mcdonnell Douglas Corporation | Method of making complementary GaAs heterojunction transistors |
US4998158A (en) * | 1987-06-01 | 1991-03-05 | Motorola, Inc. | Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier |
US5093280A (en) * | 1987-10-13 | 1992-03-03 | Northrop Corporation | Refractory metal ohmic contacts and method |
US4833042A (en) * | 1988-01-27 | 1989-05-23 | Rockwell International Corporation | Nonalloyed ohmic contacts for n type gallium arsenide |
US4830980A (en) * | 1988-04-22 | 1989-05-16 | Hughes Aircraft Company | Making complementary integrated p-MODFET and n-MODFET |
JP2893723B2 (ja) * | 1988-06-13 | 1999-05-24 | 住友電気工業株式会社 | オーミック電極の製造方法 |
US5144410A (en) * | 1989-03-29 | 1992-09-01 | Vitesse Semiconductor Corporation | Ohmic contact for III-V semiconductor devices |
US5045502A (en) * | 1990-05-10 | 1991-09-03 | Bell Communications Research, Inc. | PdIn ohmic contact to GaAs |
KR950009893B1 (ko) * | 1990-06-28 | 1995-09-01 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체기억장치 |
US5060031A (en) * | 1990-09-18 | 1991-10-22 | Motorola, Inc | Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices |
US5100835A (en) * | 1991-03-18 | 1992-03-31 | Eastman Kodak Company | Shallow ohmic contacts to N-GaAs |
US5116774A (en) * | 1991-03-22 | 1992-05-26 | Motorola, Inc. | Heterojunction method and structure |
US5275971A (en) * | 1992-04-20 | 1994-01-04 | Motorola, Inc. | Method of forming an ohmic contact to III-V semiconductor materials |
US5389564A (en) * | 1992-06-22 | 1995-02-14 | Motorola, Inc. | Method of forming a GaAs FET having etched ohmic contacts |
-
1993
- 1993-06-25 US US08/083,751 patent/US5444016A/en not_active Expired - Lifetime
-
1994
- 1994-06-23 DE DE69428399T patent/DE69428399T2/de not_active Expired - Fee Related
- 1994-06-23 EP EP94109688A patent/EP0631324B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69428399T2 (de) | 2002-07-04 |
EP0631324A1 (de) | 1994-12-28 |
EP0631324B1 (de) | 2001-09-26 |
US5444016A (en) | 1995-08-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |
|
8339 | Ceased/non-payment of the annual fee |