DE69428387D1 - Herstellungsverfahren für eine kristallisierte Halbleiterschicht - Google Patents

Herstellungsverfahren für eine kristallisierte Halbleiterschicht

Info

Publication number
DE69428387D1
DE69428387D1 DE69428387T DE69428387T DE69428387D1 DE 69428387 D1 DE69428387 D1 DE 69428387D1 DE 69428387 T DE69428387 T DE 69428387T DE 69428387 T DE69428387 T DE 69428387T DE 69428387 D1 DE69428387 D1 DE 69428387D1
Authority
DE
Germany
Prior art keywords
semiconductor layer
manufacturing process
crystallized semiconductor
crystallized
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69428387T
Other languages
English (en)
Other versions
DE69428387T2 (de
Inventor
Shunpei Yamazaki
Yasuhiko Takemura
Hongyong Zhang
Toru Takayama
Hideki Uochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5048535A external-priority patent/JP3041497B2/ja
Priority claimed from JP5048531A external-priority patent/JPH06244103A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Application granted granted Critical
Publication of DE69428387D1 publication Critical patent/DE69428387D1/de
Publication of DE69428387T2 publication Critical patent/DE69428387T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
DE69428387T 1993-02-15 1994-02-15 Herstellungsverfahren für eine kristallisierte Halbleiterschicht Expired - Lifetime DE69428387T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5048535A JP3041497B2 (ja) 1993-02-15 1993-02-15 半導体の製造方法
JP4853393 1993-02-15
JP5048531A JPH06244103A (ja) 1993-02-15 1993-02-15 半導体の製造方法

Publications (2)

Publication Number Publication Date
DE69428387D1 true DE69428387D1 (de) 2001-10-31
DE69428387T2 DE69428387T2 (de) 2002-07-04

Family

ID=27293320

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428387T Expired - Lifetime DE69428387T2 (de) 1993-02-15 1994-02-15 Herstellungsverfahren für eine kristallisierte Halbleiterschicht

Country Status (6)

Country Link
US (5) US5639698A (de)
EP (2) EP1119053B1 (de)
KR (2) KR0171923B1 (de)
CN (1) CN1052110C (de)
DE (1) DE69428387T2 (de)
TW (3) TW484190B (de)

Families Citing this family (303)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
CN1244891C (zh) 1992-08-27 2006-03-08 株式会社半导体能源研究所 有源矩阵显示器
JP3165304B2 (ja) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体処理装置
US6323071B1 (en) 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US6997985B1 (en) * 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
EP1119053B1 (de) * 1993-02-15 2011-11-02 Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung eines TFT-Halbleiterbauelementes
US5985741A (en) * 1993-02-15 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
TW241377B (de) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US5488000A (en) 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
US6713330B1 (en) 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
TW295703B (de) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
TW369686B (en) * 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
US5663077A (en) 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
JP2814049B2 (ja) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW264575B (de) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
CN1052566C (zh) 1993-11-05 2000-05-17 株式会社半导体能源研究所 制造半导体器件的方法
US6798023B1 (en) * 1993-12-02 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN100472752C (zh) 1993-12-02 2009-03-25 株式会社半导体能源研究所 半导体器件的制造方法
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP3221473B2 (ja) 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6700133B1 (en) 1994-03-11 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3150840B2 (ja) * 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
TW406861U (en) * 1994-07-28 2000-09-21 Semiconductor Energy Lab Laser processing system
JP3897826B2 (ja) * 1994-08-19 2007-03-28 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
JPH0869967A (ja) * 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3464285B2 (ja) * 1994-08-26 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW395008B (en) * 1994-08-29 2000-06-21 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
US6706572B1 (en) 1994-08-31 2004-03-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor using a high pressure oxidation step
JPH0878693A (ja) * 1994-08-31 1996-03-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
JP3359794B2 (ja) * 1994-08-31 2002-12-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW374247B (en) * 1994-09-15 1999-11-11 Semiconductor Energy Lab Co Ltd Method of fabricating semiconductor device
US6242289B1 (en) 1995-09-08 2001-06-05 Semiconductor Energy Laboratories Co., Ltd. Method for producing semiconductor device
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5915174A (en) 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6300659B1 (en) 1994-09-30 2001-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and fabrication method for same
JP3277082B2 (ja) * 1994-11-22 2002-04-22 シャープ株式会社 半導体装置およびその製造方法
JP3418647B2 (ja) * 1994-12-09 2003-06-23 株式会社半導体エネルギー研究所 半導体装置作製方法および結晶成長促進剤
US6337229B1 (en) 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor
TW303526B (de) * 1994-12-27 1997-04-21 Matsushita Electric Ind Co Ltd
JP4130237B2 (ja) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及び半導体装置の作製方法
TW305063B (de) 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
US6011607A (en) * 1995-02-15 2000-01-04 Semiconductor Energy Laboratory Co., Active matrix display with sealing material
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JP3138169B2 (ja) * 1995-03-13 2001-02-26 シャープ株式会社 半導体装置の製造方法
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
KR100265179B1 (ko) 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
US6933182B1 (en) 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
TW463378B (en) 1995-06-01 2001-11-11 Semiconductor Energy Lab Method of manufacturing semiconductor device
US6337109B1 (en) * 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of producing crystalline semiconductor
US5771110A (en) * 1995-07-03 1998-06-23 Sanyo Electric Co., Ltd. Thin film transistor device, display device and method of fabricating the same
US6790714B2 (en) 1995-07-03 2004-09-14 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3295679B2 (ja) * 1995-08-04 2002-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JP3235817B2 (ja) * 1995-09-21 2001-12-04 シャープ株式会社 半導体回路、半導体装置およびそれらの製造方法
JPH09146108A (ja) * 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
JP3917205B2 (ja) 1995-11-30 2007-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3907726B2 (ja) 1995-12-09 2007-04-18 株式会社半導体エネルギー研究所 微結晶シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法
JP3124480B2 (ja) 1995-12-12 2001-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6204101B1 (en) 1995-12-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW319912B (de) * 1995-12-15 1997-11-11 Handotai Energy Kenkyusho Kk
JPH09171192A (ja) 1995-12-19 1997-06-30 Semiconductor Energy Lab Co Ltd アクティブマトリクス型液晶表示装置及びその製造方 法
JP3477301B2 (ja) 1995-12-19 2003-12-10 株式会社半導体エネルギー研究所 アクティブマトリクス型液晶表示装置及びその製造方法
JP3737176B2 (ja) 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 液晶表示装置
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) * 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
US6449024B1 (en) 1996-01-26 2002-09-10 Semiconductor Energy Laboratory Co., Inc. Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6055028A (en) * 1996-02-14 2000-04-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optical device
US6697129B1 (en) * 1996-02-14 2004-02-24 Semiconductor Energy Laboratory Co., Ltd. Guest-host mode liquid crystal display device of lateral electric field driving type
US6063654A (en) * 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
TW317643B (de) * 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
JP3472024B2 (ja) 1996-02-26 2003-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3708620B2 (ja) * 1996-03-01 2005-10-19 株式会社半導体エネルギー研究所 アクティブマトリクス型液晶電気光学装置
US6100562A (en) * 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6133119A (en) * 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
TW548686B (en) 1996-07-11 2003-08-21 Semiconductor Energy Lab CMOS semiconductor device and apparatus using the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US5773329A (en) * 1996-07-24 1998-06-30 International Business Machines Corporation Polysilicon grown by pulsed rapid thermal annealing
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3683660B2 (ja) 1996-10-16 2005-08-17 株式会社半導体エネルギー研究所 投射型カラー画像表示装置およびその駆動方法
JP3788649B2 (ja) * 1996-11-22 2006-06-21 株式会社半導体エネルギー研究所 液晶表示装置
JPH10228248A (ja) * 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置およびその作製方法
JP3917698B2 (ja) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
JPH10199807A (ja) 1996-12-27 1998-07-31 Semiconductor Energy Lab Co Ltd 結晶性珪素膜の作製方法
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6331722B1 (en) 1997-01-18 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Hybrid circuit and electronic device using same
US6355509B1 (en) 1997-01-28 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
US6830616B1 (en) * 1997-02-10 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor and manufacturing method of semiconductor device
JPH10223532A (ja) * 1997-02-10 1998-08-21 Semiconductor Energy Lab Co Ltd 半導体の作製方法及び半導体装置の作製方法
JP3942683B2 (ja) 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3973723B2 (ja) * 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3765902B2 (ja) 1997-02-19 2006-04-12 株式会社半導体エネルギー研究所 半導体装置の作製方法および電子デバイスの作製方法
JP4242461B2 (ja) 1997-02-24 2009-03-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844552B2 (ja) 1997-02-26 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW379360B (en) * 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10282414A (ja) * 1997-04-09 1998-10-23 Canon Inc ズームレンズ
US6241817B1 (en) * 1997-05-24 2001-06-05 Jin Jang Method for crystallizing amorphous layer
US6541793B2 (en) 1997-05-30 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and semiconductor device using thin-film transistors
JP3376247B2 (ja) * 1997-05-30 2003-02-10 株式会社半導体エネルギー研究所 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP3844561B2 (ja) 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JP3717634B2 (ja) 1997-06-17 2005-11-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6066547A (en) * 1997-06-20 2000-05-23 Sharp Laboratories Of America, Inc. Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method
JP3830623B2 (ja) 1997-07-14 2006-10-04 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP3295346B2 (ja) 1997-07-14 2002-06-24 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ
US5940693A (en) 1997-07-15 1999-08-17 Sharp Laboratories Of America, Inc. Selective silicide thin-film transistor and method for same
US6326226B1 (en) 1997-07-15 2001-12-04 Lg. Philips Lcd Co., Ltd. Method of crystallizing an amorphous film
JP3754184B2 (ja) 1997-07-16 2006-03-08 株式会社半導体エネルギー研究所 薄膜トランジスタを備えたフラットパネルディスプレイの作製方法
JP3974229B2 (ja) 1997-07-22 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3939399B2 (ja) * 1997-07-22 2007-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4180689B2 (ja) 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5950078A (en) * 1997-09-19 1999-09-07 Sharp Laboratories Of America, Inc. Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates
KR100269312B1 (ko) * 1997-10-14 2000-10-16 윤종용 실리콘막의결정화방법및이를이용한박막트랜지스터-액정표시장치(tft-lcd)의제조방법
US5937315A (en) * 1997-11-07 1999-08-10 Advanced Micro Devices, Inc. Self-aligned silicide gate technology for advanced submicron MOS devices
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料
JP3107024B2 (ja) * 1997-12-09 2000-11-06 日本電気株式会社 薄膜トランジスタの製造方法
JP4376979B2 (ja) 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11204434A (ja) 1998-01-12 1999-07-30 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4236722B2 (ja) * 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6821710B1 (en) 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6060392A (en) * 1998-02-11 2000-05-09 National Semiconductor Corporation Fabrication of silicides by excimer laser annealing of amorphous silicon
US6444390B1 (en) 1998-02-18 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film
EP2261914A3 (de) * 1998-02-23 2011-03-09 Kabushiki Kaisha Toshiba Informationsaufzeichnungsmedium, Informationswiedergabeverfahren und -vorrichtung, und Informationsaufzeichnungsverfahren
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6657225B1 (en) * 1998-03-25 2003-12-02 Seiko Epson Corporation Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate
US6482684B1 (en) * 1998-03-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with Ge seeded amorphous Si layer
US6312979B1 (en) 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
US6228693B1 (en) * 1998-06-05 2001-05-08 Sharp Laboratories Of America, Inc. Selected site, metal-induced, continuous crystallization method
US6015752A (en) * 1998-06-30 2000-01-18 Advanced Micro Devices, Inc. Elevated salicide technology
US6524662B2 (en) * 1998-07-10 2003-02-25 Jin Jang Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7282398B2 (en) * 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) * 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP2000058839A (ja) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6271131B1 (en) * 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6204172B1 (en) 1998-09-03 2001-03-20 Micron Technology, Inc. Low temperature deposition of barrier layers
US6239028B1 (en) 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6284655B1 (en) 1998-09-03 2001-09-04 Micron Technology, Inc. Method for producing low carbon/oxygen conductive layers
US6784034B1 (en) 1998-10-13 2004-08-31 Lg. Philips Lcd Co., Ltd. Method for fabricating a thin film transistor
US6392810B1 (en) 1998-10-05 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device
JP2000174282A (ja) 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6287698B1 (en) 1998-12-08 2001-09-11 H. B. Fuller Licensing & Financing, Inc. Process for improving hydrolysis resistance of polyurethane dispersion adhesives and bonded assemblies produced therefrom
US6380007B1 (en) 1998-12-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP3331999B2 (ja) * 1999-02-09 2002-10-07 日本電気株式会社 半導体薄膜の製造方法
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6329286B1 (en) 1999-04-27 2001-12-11 Micron Technology, Inc. Methods for forming conformal iridium layers on substrates
US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
JP4298131B2 (ja) * 1999-05-14 2009-07-15 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
KR100317641B1 (ko) 1999-05-21 2001-12-22 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법
KR100317639B1 (ko) * 1999-05-21 2001-12-22 구본준, 론 위라하디락사 박막 트랜지스터와 액정표시장치 및 그 제조방법
TW459275B (en) * 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
JP3432187B2 (ja) * 1999-09-22 2003-08-04 シャープ株式会社 半導体装置の製造方法
KR20050013669A (ko) * 1999-10-04 2005-02-04 마츠시타 덴끼 산교 가부시키가이샤 반도체장치의 제조방법
JP3579316B2 (ja) * 1999-10-19 2004-10-20 三洋電機株式会社 半導体装置の製造方法
US7232742B1 (en) 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
TW473800B (en) * 1999-12-28 2002-01-21 Semiconductor Energy Lab Method of manufacturing a semiconductor device
KR100660814B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 박막트랜지스터의 반도체층 형성방법
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor
US7071041B2 (en) * 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW503439B (en) * 2000-01-21 2002-09-21 United Microelectronics Corp Combination structure of passive element and logic circuit on silicon on insulator wafer
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6913986B2 (en) * 2000-04-04 2005-07-05 Matsushita Electric Industrial Co., Ltd. Method and apparatus for fabricating a thin film and thin film transistor and method of fabricating same
US6291255B1 (en) * 2000-05-22 2001-09-18 Industrial Technology Research Institute TFT process with high transmittance
JP2001345451A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法
US20020060321A1 (en) 2000-07-14 2002-05-23 Kazlas Peter T. Minimally- patterned, thin-film semiconductor devices for display applications
US6660631B1 (en) 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
US6599818B2 (en) 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
JP2002176000A (ja) * 2000-12-05 2002-06-21 Semiconductor Energy Lab Co Ltd 熱処理装置及び半導体装置の製造方法
US7045444B2 (en) * 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US7534977B2 (en) * 2000-12-28 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Heat treatment apparatus and method of manufacturing a semiconductor device
KR100715908B1 (ko) * 2000-12-29 2007-05-08 엘지.필립스 엘시디 주식회사 박막 트랜지스터 및 그 제조방법
KR20020057382A (ko) * 2001-01-04 2002-07-11 주승기 반도체 소자 제조 방법 및 장치
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TW586141B (en) * 2001-01-19 2004-05-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3940560B2 (ja) * 2001-01-25 2007-07-04 独立行政法人産業技術総合研究所 半導体装置の製造方法
US6770518B2 (en) * 2001-01-29 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5088993B2 (ja) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG114529A1 (en) * 2001-02-23 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
SG114530A1 (en) * 2001-02-28 2005-09-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
SG160191A1 (en) * 2001-02-28 2010-04-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2001332496A (ja) * 2001-03-30 2001-11-30 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001338877A (ja) * 2001-03-30 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7067416B2 (en) * 2001-08-29 2006-06-27 Micron Technology, Inc. Method of forming a conductive contact
JP4108308B2 (ja) * 2001-09-18 2008-06-25 本田技研工業株式会社 ジェット推進艇の暗証番号解除方法
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
JP2003163221A (ja) * 2001-11-28 2003-06-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN100508140C (zh) * 2001-11-30 2009-07-01 株式会社半导体能源研究所 用于半导体器件的制造方法
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7413966B2 (en) * 2001-12-29 2008-08-19 Lg Phillips Lcd Co., Ltd Method of fabricating polysilicon thin film transistor with catalyst
WO2003098671A1 (en) * 2002-05-22 2003-11-27 Koninklijke Philips Electronics N.V. Active matrix display devices and the manufacture thereof
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3949027B2 (ja) * 2002-08-06 2007-07-25 富士通株式会社 アナログスイッチ回路
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
KR100930362B1 (ko) 2002-11-04 2009-12-08 엘지디스플레이 주식회사 다결정 실리콘막 형성방법과 이를 포함한박막트랜지스터의 제조방법
JP4115252B2 (ja) * 2002-11-08 2008-07-09 シャープ株式会社 半導体膜およびその製造方法ならびに半導体装置およびその製造方法
US7232715B2 (en) * 2002-11-15 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP4097521B2 (ja) * 2002-12-27 2008-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6929564B2 (en) * 2003-01-08 2005-08-16 Taylor Made Golf Company, Inc. Golf club head
JP4059095B2 (ja) * 2003-02-07 2008-03-12 セイコーエプソン株式会社 相補型薄膜トランジスタ回路、電気光学装置、電子機器
TWI254456B (en) * 2003-06-12 2006-05-01 Ind Tech Res Inst A thermal plate crystallization method
US7282738B2 (en) 2003-07-18 2007-10-16 Corning Incorporated Fabrication of crystalline materials over substrates
US7071022B2 (en) 2003-07-18 2006-07-04 Corning Incorporated Silicon crystallization using self-assembled monolayers
US6939754B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Isotropic polycrystalline silicon and method for producing same
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
CN1691277B (zh) * 2004-03-26 2010-05-26 株式会社半导体能源研究所 用于制造半导体器件的方法
US7288480B2 (en) * 2004-04-23 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device
CN101019214A (zh) * 2004-08-05 2007-08-15 加州理工大学 制造结晶硅的方法
US7683373B2 (en) * 2004-10-05 2010-03-23 Samsung Mobile Display Co., Ltd. Thin film transistor and method of fabricating the same
US7365410B2 (en) * 2004-10-29 2008-04-29 Freescale, Semiconductor, Inc. Semiconductor structure having a metallic buffer layer and method for forming
TWI382455B (zh) * 2004-11-04 2013-01-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US7575959B2 (en) * 2004-11-26 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20060197088A1 (en) * 2005-03-07 2006-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
WO2006129428A1 (ja) * 2005-05-31 2006-12-07 Sharp Kabushiki Kaisha フォトダイオード及び表示装置
JP4434080B2 (ja) 2005-06-03 2010-03-17 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
KR100646937B1 (ko) * 2005-08-22 2006-11-23 삼성에스디아이 주식회사 다결정 실리콘 박막트랜지스터 및 그 제조방법
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP5352081B2 (ja) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100839735B1 (ko) 2006-12-29 2008-06-19 삼성에스디아이 주식회사 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
US7754600B2 (en) 2007-03-01 2010-07-13 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
TWI521292B (zh) * 2007-07-20 2016-02-11 半導體能源研究所股份有限公司 液晶顯示裝置
KR101329352B1 (ko) * 2007-10-17 2013-11-13 삼성전자주식회사 반도체 장치의 제조방법
JP5436101B2 (ja) * 2008-09-05 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI455186B (zh) * 2009-01-23 2014-10-01 Univ Nat Chiao Tung Fabrication of metal - induced crystals by ion implantation
TWI384534B (zh) * 2009-01-23 2013-02-01 Univ Nat Chiao Tung A Method for Improving the Properties of Lateral Crystalline Layer by Using Metal to Improve Metal
KR101088457B1 (ko) * 2009-04-07 2011-12-01 주식회사 테라세미콘 금속 촉매를 이용한 폴리 실리콘 마스크의 제조방법 및 이를 이용한 반도체 소자의 제조방법
FR2950477A1 (fr) * 2009-09-18 2011-03-25 Commissariat Energie Atomique Procede de preparation d'une couche mince de silicium polycristallin
KR101049802B1 (ko) * 2009-11-20 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법, 박막트랜지스터, 그를 구비하는 유기전계발광표시장치 및 그들의 제조방법
US8232148B2 (en) * 2010-03-04 2012-07-31 International Business Machines Corporation Structure and method to make replacement metal gate and contact metal
CN107658212B (zh) * 2010-12-10 2021-08-06 帝人株式会社 半导体层叠体、半导体装置，以及它们的制造方法
DE102012213077A1 (de) * 2012-07-25 2014-01-30 Robert Bosch Gmbh Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage
US8946062B2 (en) * 2012-11-21 2015-02-03 Guardian Industries Corp. Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
KR102048941B1 (ko) 2013-04-12 2020-01-09 삼성디스플레이 주식회사 가요성 기판 및 그 제조 방법, 유기 발광 표시 장치
CN103972050A (zh) * 2014-05-14 2014-08-06 京东方科技集团股份有限公司 多晶硅薄膜、多晶硅薄膜晶体管及阵列基板的制备方法
TWI593024B (zh) * 2015-07-24 2017-07-21 友達光電股份有限公司 薄膜電晶體的製造方法
CN111509061B (zh) * 2020-03-20 2023-10-20 中国科学院宁波材料技术与工程研究所 p型多晶硅薄膜制备方法及其在钝化接触太阳电池中的应用

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US28386A (en) * 1860-05-22 Improvement in seed-planters
US28385A (en) * 1860-05-22 Improvement in apparatus for clarifying cane-juice
US3783049A (en) * 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
JPS5833822A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 半導体基体の製作方法
JPS58130517A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 単結晶薄膜の製造方法
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS58190020A (ja) * 1982-04-30 1983-11-05 Seiko Epson Corp エピタキシヤル成長法
JPS5983993A (ja) * 1982-11-02 1984-05-15 Nec Corp 単結晶半導体層の成長方法
JPS60202952A (ja) * 1984-03-28 1985-10-14 Fujitsu Ltd 半導体装置の製造方法
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
EP0178447B1 (de) * 1984-10-09 1993-02-17 Fujitsu Limited Verfahren zur Herstellung einer auf der Halbleiter-auf-Isolator-Technologie basierenden integrierten Schaltung
JPH07105338B2 (ja) * 1985-08-07 1995-11-13 日本電気株式会社 半導体装置の製造方法
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4783379A (en) * 1987-04-17 1988-11-08 Tosoh Smd, Inc. Explosive crystallization in metal/silicon multilayer film
US5225355A (en) * 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
US5010037A (en) * 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
JPH02140915A (ja) * 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
US5075259A (en) * 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
EP0459763B1 (de) * 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Dünnfilmtransistoren
JPH0462976A (ja) * 1990-06-30 1992-02-27 Nippon Seiki Co Ltd 加速度センサの製造方法
GB9014723D0 (en) * 1990-07-03 1990-08-22 Marconi Gec Ltd Crystallisation process
US5147826A (en) 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JP2650003B2 (ja) * 1991-02-14 1997-09-03 信越化学工業株式会社 化学的気相成長法によるシリコン単結晶の製造方法およびその原料クロロシラン類中の超微量元素と製造されたシリコン単結晶中の超微量元素の分別定量方法
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
GB9114018D0 (en) * 1991-06-28 1991-08-14 Philips Electronic Associated Thin-film transistor manufacture
JPH05109737A (ja) * 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
US5244819A (en) * 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
JP2865925B2 (ja) * 1992-01-16 1999-03-08 太陽誘電株式会社 誘電体磁器組成物の製造方法
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP3204735B2 (ja) * 1992-06-01 2001-09-04 株式会社東芝 水素化アモルファスシリコン薄膜トランジスタの製造方法
US5288662A (en) * 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
JP2534189B2 (ja) * 1993-01-29 1996-09-11 株式会社フジクラ 切換分岐盤
US5843225A (en) * 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
JPH06296023A (ja) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
EP1119053B1 (de) * 1993-02-15 2011-11-02 Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung eines TFT-Halbleiterbauelementes
US5275851A (en) * 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
US5624851A (en) * 1993-03-12 1997-04-29 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
TW278219B (de) * 1993-03-12 1996-06-11 Handotai Energy Kenkyusho Kk
TW241377B (de) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100203982B1 (ko) * 1993-03-12 1999-06-15 야마자끼 순페이 반도체장치 및 그의 제작방법
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
US5422311A (en) * 1993-05-03 1995-06-06 Hyundai Electronics Industries Co., Ltd. Method for manufacturing a conductor layer in a semiconductor device
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
TW369686B (en) * 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
JP2975973B2 (ja) * 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH07335904A (ja) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜半導体集積回路
TW264575B (de) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3562590B2 (ja) * 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
US5654203A (en) * 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH07335906A (ja) * 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JP3072000B2 (ja) * 1994-06-23 2000-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5426061A (en) * 1994-09-06 1995-06-20 Midwest Research Institute Impurity gettering in semiconductors
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3942651B2 (ja) * 1994-10-07 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3486240B2 (ja) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
US5756364A (en) * 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法

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US5608232A (en) 1997-03-04
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CN1098554A (zh) 1995-02-08
CN1052110C (zh) 2000-05-03
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US5639698A (en) 1997-06-17
US5897347A (en) 1999-04-27
DE69428387T2 (de) 2002-07-04
EP1119053B1 (de) 2011-11-02
EP0612102A3 (de) 1994-10-19
TW509999B (en) 2002-11-11
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