DE69425642T2 - Flüssigkristall-Anzeigevorrichtung - Google Patents
Flüssigkristall-AnzeigevorrichtungInfo
- Publication number
- DE69425642T2 DE69425642T2 DE69425642T DE69425642T DE69425642T2 DE 69425642 T2 DE69425642 T2 DE 69425642T2 DE 69425642 T DE69425642 T DE 69425642T DE 69425642 T DE69425642 T DE 69425642T DE 69425642 T2 DE69425642 T2 DE 69425642T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- liquid
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5337495A JPH07199150A (ja) | 1993-12-28 | 1993-12-28 | 液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425642D1 DE69425642D1 (de) | 2000-09-28 |
DE69425642T2 true DE69425642T2 (de) | 2001-04-19 |
Family
ID=18309194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425642T Expired - Lifetime DE69425642T2 (de) | 1993-12-28 | 1994-12-23 | Flüssigkristall-Anzeigevorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5717473A (de) |
EP (1) | EP0661582B1 (de) |
JP (1) | JPH07199150A (de) |
DE (1) | DE69425642T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08264802A (ja) * | 1995-03-28 | 1996-10-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法、薄膜トランジスタ作製方法および薄膜トランジスタ |
US7271410B2 (en) * | 1995-03-28 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix circuit |
JP3143592B2 (ja) * | 1995-09-14 | 2001-03-07 | キヤノン株式会社 | 表示装置 |
US5917563A (en) * | 1995-10-16 | 1999-06-29 | Sharp Kabushiki Kaisha | Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line |
JP3645379B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US5985740A (en) * | 1996-01-19 | 1999-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device including reduction of a catalyst |
JP3645380B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
JP3729955B2 (ja) * | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR100193987B1 (ko) * | 1996-05-11 | 1999-06-15 | 구자홍 | 구동회로 일체형 액정표시소자 및 제조방법 |
JP3188411B2 (ja) * | 1996-10-18 | 2001-07-16 | キヤノン株式会社 | 反射型液晶装置用画素電極基板、該画素電極基板を用いた液晶装置及び該液晶装置を用いた表示装置 |
JP3513371B2 (ja) * | 1996-10-18 | 2004-03-31 | キヤノン株式会社 | マトリクス基板と液晶装置とこれらを用いた表示装置 |
JP3571887B2 (ja) * | 1996-10-18 | 2004-09-29 | キヤノン株式会社 | アクティブマトリクス基板及び液晶装置 |
US6445004B1 (en) * | 1998-02-26 | 2002-09-03 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
US6433841B1 (en) | 1997-12-19 | 2002-08-13 | Seiko Epson Corporation | Electro-optical apparatus having faces holding electro-optical material in between flattened by using concave recess, manufacturing method thereof, and electronic device using same |
TW413949B (en) * | 1998-12-12 | 2000-12-01 | Samsung Electronics Co Ltd | Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same |
TW478169B (en) * | 1999-07-16 | 2002-03-01 | Seiko Epson Corp | Electro optical device and the projection display device using the same |
JP4647843B2 (ja) * | 2001-06-28 | 2011-03-09 | 株式会社日立製作所 | 液晶表示装置 |
JP3575481B2 (ja) * | 2003-01-16 | 2004-10-13 | セイコーエプソン株式会社 | 液晶装置及びその製造方法並びに電子機器 |
TW594653B (en) * | 2003-06-02 | 2004-06-21 | Toppoly Optoelectronics Corp | Low leakage thin film transistor circuit |
JP2005092122A (ja) * | 2003-09-19 | 2005-04-07 | Nec Corp | 薄膜トランジスタ基板及びその製造方法 |
CN112987418B (zh) * | 2021-03-01 | 2022-07-22 | 福州京东方光电科技有限公司 | 一种显示面板以及显示装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2042238B (en) * | 1979-02-14 | 1982-12-08 | Matsushita Electric Ind Co Ltd | Drive circuit for a liquid crystal display panel |
JPH06105784B2 (ja) * | 1984-07-26 | 1994-12-21 | 株式会社日立製作所 | 半導体装置 |
JPS63316027A (ja) * | 1987-06-18 | 1988-12-23 | Fuji Electric Co Ltd | アクティブマトリクス基板 |
JPH01276755A (ja) * | 1988-04-28 | 1989-11-07 | Sony Corp | 薄膜トランジスタ |
JPH02178965A (ja) * | 1988-12-29 | 1990-07-11 | Nippondenso Co Ltd | 絶縁分離型電界効果半導体装置 |
JP2941908B2 (ja) * | 1989-07-31 | 1999-08-30 | キヤノン株式会社 | 薄膜トランジスタ及びその製造方法並びにそれを有する装置 |
US5305128A (en) * | 1989-12-22 | 1994-04-19 | North American Philips Corporation | Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same |
US5162933A (en) * | 1990-05-16 | 1992-11-10 | Nippon Telegraph And Telephone Corporation | Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium |
JPH04241466A (ja) * | 1991-01-16 | 1992-08-28 | Casio Comput Co Ltd | 電界効果型トランジスタ |
JP3191061B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体装置及び液晶表示装置 |
US5546204A (en) * | 1994-05-26 | 1996-08-13 | Honeywell Inc. | TFT matrix liquid crystal device having data source lines and drain means of etched and doped single crystal silicon |
US5483366A (en) * | 1994-07-20 | 1996-01-09 | David Sarnoff Research Center Inc | LCD with hige capacitance pixel having an ITO active region/poly SI pixel region electrical connection and having poly SI selection line extensions along pixel edges |
-
1993
- 1993-12-28 JP JP5337495A patent/JPH07199150A/ja active Pending
-
1994
- 1994-12-23 EP EP94309743A patent/EP0661582B1/de not_active Expired - Lifetime
- 1994-12-23 DE DE69425642T patent/DE69425642T2/de not_active Expired - Lifetime
- 1994-12-23 US US08/362,982 patent/US5717473A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH07199150A (ja) | 1995-08-04 |
US5717473A (en) | 1998-02-10 |
DE69425642D1 (de) | 2000-09-28 |
EP0661582B1 (de) | 2000-08-23 |
EP0661582A2 (de) | 1995-07-05 |
EP0661582A3 (de) | 1995-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |