DE69425389T2 - Positiv arbeitendes strahlungsempfindliches Gemisch - Google Patents

Positiv arbeitendes strahlungsempfindliches Gemisch

Info

Publication number
DE69425389T2
DE69425389T2 DE69425389T DE69425389T DE69425389T2 DE 69425389 T2 DE69425389 T2 DE 69425389T2 DE 69425389 T DE69425389 T DE 69425389T DE 69425389 T DE69425389 T DE 69425389T DE 69425389 T2 DE69425389 T2 DE 69425389T2
Authority
DE
Germany
Prior art keywords
radiation sensitive
positive working
sensitive mixture
working radiation
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69425389T
Other languages
English (en)
Other versions
DE69425389D1 (de
Inventor
Klaus Juergen Przybilla
Ralph Dammel
Georg Pawlowski
Takanori Kudo
Seiya Masuda
Yoshiaki Kinoshita
Natsumi Suehiro
Munirathna Padmanaban
Hiroshi Okazaki
Hajime Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02575393A external-priority patent/JP3300089B2/ja
Priority claimed from JP5025751A external-priority patent/JPH06242605A/ja
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Application granted granted Critical
Publication of DE69425389D1 publication Critical patent/DE69425389D1/de
Publication of DE69425389T2 publication Critical patent/DE69425389T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
DE69425389T 1993-02-15 1994-02-15 Positiv arbeitendes strahlungsempfindliches Gemisch Expired - Lifetime DE69425389T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02575393A JP3300089B2 (ja) 1993-02-15 1993-02-15 ポジ型放射感応性混合物
JP5025751A JPH06242605A (ja) 1993-02-15 1993-02-15 ポジ型放射感応性混合物

Publications (2)

Publication Number Publication Date
DE69425389D1 DE69425389D1 (de) 2000-09-07
DE69425389T2 true DE69425389T2 (de) 2001-02-01

Family

ID=26363435

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425389T Expired - Lifetime DE69425389T2 (de) 1993-02-15 1994-02-15 Positiv arbeitendes strahlungsempfindliches Gemisch

Country Status (5)

Country Link
US (2) US5525453A (de)
EP (1) EP0611998B1 (de)
KR (1) KR100355254B1 (de)
DE (1) DE69425389T2 (de)
TW (1) TW434457B (de)

Families Citing this family (51)

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DE4306069A1 (de) * 1993-03-01 1994-09-08 Basf Ag Strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen mit verbessertem Kontrast
DE4408318C2 (de) * 1993-03-12 1999-09-09 Toshiba Kk Positiv arbeitende Lichtempfindliche Zusammensetzung
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
JP3317597B2 (ja) * 1994-10-18 2002-08-26 富士写真フイルム株式会社 ポジ型感光性組成物
US5683856A (en) * 1994-10-18 1997-11-04 Fuji Photo Film Co., Ltd. Positive-working photosensitive composition
JP3549592B2 (ja) * 1994-11-02 2004-08-04 クラリアント インターナショナル リミテッド 放射線感応性組成物
JPH08262720A (ja) * 1995-03-28 1996-10-11 Hoechst Ind Kk 可塑剤を含む放射線感応性組成物
US5609989A (en) * 1995-06-06 1997-03-11 International Business Machines, Corporation Acid scavengers for use in chemically amplified photoresists
US5952150A (en) * 1995-06-08 1999-09-14 Jsr Corporation Radiation sensitive resin composition
JP3193027B2 (ja) * 1995-06-15 2001-07-30 東京応化工業株式会社 レジストパターン形成方法
JP2956824B2 (ja) * 1995-06-15 1999-10-04 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液
DE19533608A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
DE19533607A1 (de) * 1995-09-11 1997-03-13 Basf Ag Positivarbeitendes strahlungsempfindliches Gemisch und Verfahren zur Herstellung von Reliefstrukturen
JP3073149B2 (ja) * 1995-10-30 2000-08-07 東京応化工業株式会社 ポジ型レジスト組成物
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
US5879856A (en) 1995-12-05 1999-03-09 Shipley Company, L.L.C. Chemically amplified positive photoresists
EP0869393B1 (de) * 1997-03-31 2000-05-31 Fuji Photo Film Co., Ltd. Positiv-arbeitende photoempfindliche Zusammensetzung
EP0874281B1 (de) * 1997-04-23 2002-12-04 Infineon Technologies AG Chemisch verstärkter Resist
US5866299A (en) * 1997-06-18 1999-02-02 Shipley Company, L.L.C. Negative photoresist composition
US6358672B2 (en) * 1998-02-05 2002-03-19 Samsung Electronics Co., Ltd. Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
US6127089A (en) * 1998-08-28 2000-10-03 Advanced Micro Devices, Inc. Interconnect structure with low k dielectric materials and method of making the same with single and dual damascene techniques
US6852466B2 (en) 1998-12-23 2005-02-08 Shipley Company, L.L.C. Photoresist compositions particularly suitable for short wavelength imaging
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
US6365322B1 (en) 1999-12-07 2002-04-02 Clariant Finance (Bvi) Limited Photoresist composition for deep UV radiation
KR100550936B1 (ko) * 1999-12-08 2006-02-13 제일모직주식회사 히드록시스티렌계 포토레지스트 조성물의 제조방법 및그에 의해 수득된 포토레지스트 조성물
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
US6841330B2 (en) * 2000-11-30 2005-01-11 Fuji Photo Film Co., Ltd. Planographic printing plate precursor
US7192681B2 (en) 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3917422B2 (ja) * 2001-07-26 2007-05-23 富士フイルム株式会社 画像形成材料
US20040067435A1 (en) * 2002-09-17 2004-04-08 Fuji Photo Film Co., Ltd. Image forming material
DE10243742B4 (de) * 2002-09-20 2007-11-08 Qimonda Ag Verfahren zur Strukturierung von Halbleitersubstraten unter Verwendung eines Fotoresists
US7160667B2 (en) * 2003-01-24 2007-01-09 Fuji Photo Film Co., Ltd. Image forming material
JP4009852B2 (ja) * 2003-05-21 2007-11-21 信越化学工業株式会社 塩基性化合物、レジスト材料及びパターン形成方法
JP4081677B2 (ja) * 2003-05-21 2008-04-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4029288B2 (ja) * 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4346358B2 (ja) * 2003-06-20 2009-10-21 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物およびそれを用いた半導体装置の製造方法、パターン形成方法
JP4612999B2 (ja) 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4494060B2 (ja) 2004-03-30 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物
JP4524154B2 (ja) 2004-08-18 2010-08-11 富士フイルム株式会社 化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100839357B1 (ko) * 2006-11-27 2008-06-19 삼성전자주식회사 패턴 형성 방법 및 커패시터 제조 방법
US8153346B2 (en) 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US9551928B2 (en) * 2009-04-06 2017-01-24 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith
US10377692B2 (en) * 2009-09-09 2019-08-13 Sumitomo Chemical Company, Limited Photoresist composition
JP5516384B2 (ja) * 2010-01-05 2014-06-11 住友化学株式会社 レジスト組成物
KR101813298B1 (ko) 2010-02-24 2017-12-28 바스프 에스이 잠재성 산 및 그의 용도
KR20120066924A (ko) * 2010-12-15 2012-06-25 제일모직주식회사 오르토-니트로벤질 에스테르 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
JP6006999B2 (ja) * 2012-06-20 2016-10-12 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
EP3253735B1 (de) 2015-02-02 2021-03-31 Basf Se Latente säuren und ihre verwendung

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US3620786A (en) * 1969-08-27 1971-11-16 Dow Chemical Co Starch and cellulosic products treated with water-soluble sulfonium derivatives of diphenyl ether
US4329480A (en) * 1978-03-31 1982-05-11 The Dow Chemical Company Cyclic meta-sulfonium-phenoxide zwitterions
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4933377A (en) * 1988-02-29 1990-06-12 Saeva Franklin D Novel sulfonium salts and the use thereof as photoinitiators
US5114473A (en) * 1988-08-25 1992-05-19 Union Carbide Chemicals And Plastics Technology Corporation Transition metal recovery
US5047568A (en) * 1988-11-18 1991-09-10 International Business Machines Corporation Sulfonium salts and use and preparation thereof
JPH0451243A (ja) * 1990-06-20 1992-02-19 Hitachi Ltd パターン形成方法
US5334316A (en) * 1990-10-10 1994-08-02 Brigham Young University Process of using polytetraalkylammonium and polytrialkylamine-containing ligands bonded to inorganic supports for removing and concentrating desired ions from solutions
DE4111283A1 (de) * 1991-04-08 1992-10-15 Basf Ag Strahlungsempfindliches gemisch, enthaltend saeurelabile gruppierungen und verfahren zur herstellung von reliefmustern und reliefbildern
US5378802A (en) * 1991-09-03 1995-01-03 Ocg Microelectronic Materials, Inc. Method for removing impurities from resist components and novolak resins
JPH05127369A (ja) * 1991-10-31 1993-05-25 Nec Corp レジスト材料
US5443736A (en) * 1993-10-20 1995-08-22 Shipley Company Inc. Purification process

Also Published As

Publication number Publication date
TW434457B (en) 2001-05-16
EP0611998A3 (en) 1995-11-29
US5843319A (en) 1998-12-01
US5525453A (en) 1996-06-11
EP0611998A2 (de) 1994-08-24
KR100355254B1 (en) 2003-03-31
DE69425389D1 (de) 2000-09-07
EP0611998B1 (de) 2000-08-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP., SOMERVILLE, N.J

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU