DE69421463D1 - Ablagerung des Siliziumnitrids - Google Patents

Ablagerung des Siliziumnitrids

Info

Publication number
DE69421463D1
DE69421463D1 DE69421463T DE69421463T DE69421463D1 DE 69421463 D1 DE69421463 D1 DE 69421463D1 DE 69421463 T DE69421463 T DE 69421463T DE 69421463 T DE69421463 T DE 69421463T DE 69421463 D1 DE69421463 D1 DE 69421463D1
Authority
DE
Germany
Prior art keywords
deposit
silicon nitride
nitride
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69421463T
Other languages
English (en)
Other versions
DE69421463T2 (de
Inventor
Peter H Hey
David Carlson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69421463D1 publication Critical patent/DE69421463D1/de
Application granted granted Critical
Publication of DE69421463T2 publication Critical patent/DE69421463T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
DE69421463T 1993-07-30 1994-07-04 Ablagerung des Siliziumnitrids Expired - Fee Related DE69421463T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10065193A 1993-07-30 1993-07-30

Publications (2)

Publication Number Publication Date
DE69421463D1 true DE69421463D1 (de) 1999-12-09
DE69421463T2 DE69421463T2 (de) 2000-02-10

Family

ID=22280831

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69421463T Expired - Fee Related DE69421463T2 (de) 1993-07-30 1994-07-04 Ablagerung des Siliziumnitrids

Country Status (4)

Country Link
US (1) US5482739A (de)
EP (1) EP0636704B1 (de)
JP (1) JPH07153707A (de)
DE (1) DE69421463T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167605A (ja) * 1994-12-15 1996-06-25 Mitsubishi Electric Corp シリコン窒化膜の製造方法
US6110761A (en) 1997-08-05 2000-08-29 Micron Technology, Inc. Methods for simultaneously electrically and mechanically attaching lead frames to semiconductor dice and the resulting elements
US6099648A (en) * 1997-08-06 2000-08-08 Applied Materials, Inc. Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
US6352593B1 (en) 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6258170B1 (en) * 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
KR19990041688A (ko) * 1997-11-24 1999-06-15 김규현 티타늄 샐리사이드 형성 방법
US6833280B1 (en) 1998-03-13 2004-12-21 Micron Technology, Inc. Process for fabricating films of uniform properties on semiconductor devices
US6635114B2 (en) 1999-12-17 2003-10-21 Applied Material, Inc. High temperature filter for CVD apparatus
US6348420B1 (en) 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US6495476B1 (en) * 2000-08-22 2002-12-17 Promos Technologies, Inc. Method for preventing native oxide growth during nitridation
US6576564B2 (en) * 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
US6844273B2 (en) * 2001-02-07 2005-01-18 Tokyo Electron Limited Precleaning method of precleaning a silicon nitride film forming system
US6923821B2 (en) * 2001-02-28 2005-08-02 Theodore Wortrich Microkeratome blades and methods of making
DE10228990A1 (de) * 2002-06-28 2004-01-15 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Integriertes, kontinuierliches Verfahren zur Herstellung molekularer Einkomponentenvorläufer mit Stickstoff-Brückenfunktion
US7300829B2 (en) * 2003-06-02 2007-11-27 Applied Materials, Inc. Low temperature process for TFT fabrication
US7112541B2 (en) 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
US7273823B2 (en) 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US7794667B2 (en) 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US7709391B2 (en) * 2006-01-20 2010-05-04 Applied Materials, Inc. Methods for in-situ generation of reactive etch and growth specie in film formation processes
KR100754243B1 (ko) * 2006-02-17 2007-09-03 삼성전자주식회사 반도체 제조설비의 진공 장치
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9499909B2 (en) 2013-03-15 2016-11-22 Applied Materials, Inc. Methods for photo-excitation of precursors in epitaxial processes using a rotary scanning unit
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US10591182B2 (en) 2015-03-31 2020-03-17 Lam Research Corporation Apparatus for thermal control of tubing assembly and associated methods
WO2019120358A1 (de) * 2017-12-21 2019-06-27 centrotherm international AG Verfahren zum betrieb einer abscheideanlage
CN114318300A (zh) * 2021-12-30 2022-04-12 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS61101410A (ja) * 1984-10-24 1986-05-20 Hiroshi Ishizuka 多結晶珪素の製造法及びそのための装置
US4996082A (en) * 1985-04-26 1991-02-26 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
JP2677606B2 (ja) * 1988-06-08 1997-11-17 東京エレクトロン株式会社 熱処理装置
US5108792A (en) * 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity

Also Published As

Publication number Publication date
EP0636704B1 (de) 1999-11-03
US5482739A (en) 1996-01-09
EP0636704A1 (de) 1995-02-01
DE69421463T2 (de) 2000-02-10
JPH07153707A (ja) 1995-06-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee