DE69417346D1 - Bildaufnehmer und Herstellungsverfahren - Google Patents
Bildaufnehmer und HerstellungsverfahrenInfo
- Publication number
- DE69417346D1 DE69417346D1 DE69417346T DE69417346T DE69417346D1 DE 69417346 D1 DE69417346 D1 DE 69417346D1 DE 69417346 T DE69417346 T DE 69417346T DE 69417346 T DE69417346 T DE 69417346T DE 69417346 D1 DE69417346 D1 DE 69417346D1
- Authority
- DE
- Germany
- Prior art keywords
- imager
- manufacturing process
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/149,888 US5399884A (en) | 1993-11-10 | 1993-11-10 | Radiation imager with single passivation dielectric for transistor and diode |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69417346D1 true DE69417346D1 (de) | 1999-04-29 |
DE69417346T2 DE69417346T2 (de) | 1999-10-14 |
Family
ID=22532222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69417346T Expired - Fee Related DE69417346T2 (de) | 1993-11-10 | 1994-10-19 | Bildaufnehmer und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US5399884A (de) |
EP (1) | EP0652596B1 (de) |
JP (1) | JP3863923B2 (de) |
DE (1) | DE69417346T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5435608A (en) * | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
US5619033A (en) * | 1995-06-07 | 1997-04-08 | Xerox Corporation | Layered solid state photodiode sensor array |
US5693567A (en) * | 1995-06-07 | 1997-12-02 | Xerox Corporation | Separately etching insulating layer for contacts within array and for peripheral pads |
US5648674A (en) * | 1995-06-07 | 1997-07-15 | Xerox Corporation | Array circuitry with conductive lines, contact leads, and storage capacitor electrode all formed in layer that includes highly conductive metal |
GB9520791D0 (en) * | 1995-10-13 | 1995-12-13 | Philips Electronics Nv | Image sensor |
US5663577A (en) * | 1996-03-01 | 1997-09-02 | General Electric Company | Solid state imager array with address line spacer structure |
US6288764B1 (en) * | 1996-06-25 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device or electronic device having liquid crystal display panel |
US5959312A (en) * | 1996-09-27 | 1999-09-28 | Xerox Corporation | Sensor with doped microcrystalline silicon channel leads with bubble formation protection means |
US5814530A (en) * | 1996-09-27 | 1998-09-29 | Xerox Corporation | Producing a sensor with doped microcrystalline silicon channel leads |
US6337520B1 (en) | 1997-02-26 | 2002-01-08 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof |
US6445004B1 (en) * | 1998-02-26 | 2002-09-03 | Samsung Electronics Co., Ltd. | Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof |
US6037609A (en) | 1997-01-17 | 2000-03-14 | General Electric Company | Corrosion resistant imager |
JP3003998B2 (ja) * | 1998-03-18 | 2000-01-31 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ドライエッチング方法およびその方法を用いたtftの製造方法 |
JP2000131444A (ja) * | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
EP1113290A3 (de) * | 1999-12-27 | 2001-07-18 | General Electric Company | Strahlungs-Bildaufnahmevorrichtung mit lichtabsorbierender Schicht |
KR100630880B1 (ko) * | 1999-12-31 | 2006-10-02 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
US6465824B1 (en) * | 2000-03-09 | 2002-10-15 | General Electric Company | Imager structure |
US6724010B1 (en) | 2000-08-03 | 2004-04-20 | General Electric Company | Solid state imager having gated photodiodes and method for making same |
US6465286B2 (en) | 2000-12-20 | 2002-10-15 | General Electric Company | Method of fabricating an imager array |
US6566284B2 (en) * | 2001-08-07 | 2003-05-20 | Hrl Laboratories, Llc | Method of manufacture for 80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio and resonant tunneling diode therefrom |
US6740884B2 (en) | 2002-04-03 | 2004-05-25 | General Electric Company | Imaging array and methods for fabricating same |
US6777685B2 (en) * | 2002-04-03 | 2004-08-17 | General Electric Company | Imaging array and methods for fabricating same |
US6559506B1 (en) * | 2002-04-03 | 2003-05-06 | General Electric Company | Imaging array and methods for fabricating same |
US6784434B2 (en) * | 2002-06-25 | 2004-08-31 | General Electric Company | Imaging array and method for manufacturing same |
US7473903B2 (en) * | 2003-02-12 | 2009-01-06 | General Electric Company | Method and apparatus for deposited hermetic cover for digital X-ray panel |
KR101085451B1 (ko) * | 2005-02-11 | 2011-11-21 | 삼성전자주식회사 | 표시장치용 박막트랜지스터 기판과 그 제조방법 |
US7615731B2 (en) * | 2006-09-14 | 2009-11-10 | Carestream Health, Inc. | High fill-factor sensor with reduced coupling |
JP5286691B2 (ja) | 2007-05-14 | 2013-09-11 | 三菱電機株式会社 | フォトセンサー |
JP5366410B2 (ja) * | 2008-01-30 | 2013-12-11 | 富士フイルム株式会社 | 電磁波検出素子の製造方法 |
US9031195B2 (en) | 2011-05-20 | 2015-05-12 | General Electric Company | Imaging detector and methods for image detection |
US9935152B2 (en) | 2012-12-27 | 2018-04-03 | General Electric Company | X-ray detector having improved noise performance |
US9917133B2 (en) | 2013-12-12 | 2018-03-13 | General Electric Company | Optoelectronic device with flexible substrate |
US9257480B2 (en) * | 2013-12-30 | 2016-02-09 | General Electric Company | Method of manufacturing photodiode detectors |
WO2015138329A1 (en) | 2014-03-13 | 2015-09-17 | General Electric Company | Curved digital x-ray detector for weld inspection |
CN108376688A (zh) * | 2018-04-28 | 2018-08-07 | 京东方科技集团股份有限公司 | 一种感光组件及其制备方法、阵列基板、显示装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4719498A (en) * | 1984-05-18 | 1988-01-12 | Fujitsu Limited | Optoelectronic integrated circuit |
JPH0783096B2 (ja) * | 1985-12-17 | 1995-09-06 | セイコーエプソン株式会社 | 固体撮像装置 |
JPS62293763A (ja) * | 1986-06-13 | 1987-12-21 | Seiko Epson Corp | 固体撮像装置 |
JPS63158871A (ja) * | 1986-12-22 | 1988-07-01 | Nec Corp | 光・電子集積回路 |
JPS63174361A (ja) * | 1987-01-13 | 1988-07-18 | Nec Corp | 光・電子集積回路 |
JPS6465867A (en) * | 1987-09-05 | 1989-03-13 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
JPH03109770A (ja) * | 1989-09-25 | 1991-05-09 | Ricoh Co Ltd | イメージセンサ |
JPH0734467B2 (ja) * | 1989-11-16 | 1995-04-12 | 富士ゼロックス株式会社 | イメージセンサ製造方法 |
US5182625A (en) * | 1990-04-26 | 1993-01-26 | Fuji Xerox Co., Ltd. | Image sensor and method of manufacturing the same |
JPH0423470A (ja) * | 1990-05-18 | 1992-01-27 | Fuji Xerox Co Ltd | イメージセンサ |
US5153438A (en) * | 1990-10-01 | 1992-10-06 | General Electric Company | Method of forming an x-ray imaging array and the array |
US5187369A (en) * | 1990-10-01 | 1993-02-16 | General Electric Company | High sensitivity, high resolution, solid state x-ray imaging device with barrier layer |
CA2048785A1 (en) * | 1990-10-05 | 1992-04-06 | Robert F. Kwasnick | Imager having improved thin film transistor and photosensitive device structures |
US5198694A (en) * | 1990-10-05 | 1993-03-30 | General Electric Company | Thin film transistor structure with improved source/drain contacts |
JPH0787243B2 (ja) * | 1990-10-18 | 1995-09-20 | 富士ゼロックス株式会社 | 半導体装置 |
EP0523784A1 (de) * | 1991-07-15 | 1993-01-20 | Philips Electronics Uk Limited | Bildgebender Detektor und Methode seiner Herstellung |
US5179284A (en) * | 1991-08-21 | 1993-01-12 | General Electric Company | Solid state radiation imager having a reflective and protective coating |
US5132539A (en) * | 1991-08-29 | 1992-07-21 | General Electric Company | Planar X-ray imager having a moisture-resistant sealing structure |
US5233181A (en) * | 1992-06-01 | 1993-08-03 | General Electric Company | Photosensitive element with two layer passivation coating |
US5401668A (en) * | 1993-09-02 | 1995-03-28 | General Electric Company | Method for fabrication solid state radiation imager having improved scintillator adhesion |
US5391507A (en) * | 1993-09-03 | 1995-02-21 | General Electric Company | Lift-off fabrication method for self-aligned thin film transistors |
US5384271A (en) * | 1993-10-04 | 1995-01-24 | General Electric Company | Method for reduction of off-current in thin film transistors |
-
1993
- 1993-11-10 US US08/149,888 patent/US5399884A/en not_active Expired - Lifetime
-
1994
- 1994-10-19 EP EP94307662A patent/EP0652596B1/de not_active Expired - Lifetime
- 1994-10-19 DE DE69417346T patent/DE69417346T2/de not_active Expired - Fee Related
- 1994-10-28 US US08/330,955 patent/US5516712A/en not_active Expired - Fee Related
- 1994-11-10 JP JP27544494A patent/JP3863923B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0652596A1 (de) | 1995-05-10 |
JPH07221279A (ja) | 1995-08-18 |
DE69417346T2 (de) | 1999-10-14 |
JP3863923B2 (ja) | 2006-12-27 |
US5399884A (en) | 1995-03-21 |
EP0652596B1 (de) | 1999-03-24 |
US5516712A (en) | 1996-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: ROEGER UND KOLLEGEN, 73728 ESSLINGEN |
|
8339 | Ceased/non-payment of the annual fee |