DE69416363T2 - Abbildendes festkörperbauteil und herstellungsverfahren dafür - Google Patents
Abbildendes festkörperbauteil und herstellungsverfahren dafürInfo
- Publication number
- DE69416363T2 DE69416363T2 DE69416363T DE69416363T DE69416363T2 DE 69416363 T2 DE69416363 T2 DE 69416363T2 DE 69416363 T DE69416363 T DE 69416363T DE 69416363 T DE69416363 T DE 69416363T DE 69416363 T2 DE69416363 T2 DE 69416363T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- solid component
- method therefor
- imaging solid
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP06378993A JP3267375B2 (ja) | 1993-03-23 | 1993-03-23 | 固体撮像装置 |
JP5314135A JPH07142694A (ja) | 1993-11-19 | 1993-11-19 | 半導体装置およびその動作方法 |
PCT/JP1994/000452 WO1994022173A1 (en) | 1993-03-23 | 1994-03-22 | Solid state imaging device and process for production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416363D1 DE69416363D1 (de) | 1999-03-18 |
DE69416363T2 true DE69416363T2 (de) | 1999-09-23 |
Family
ID=26404914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416363T Expired - Lifetime DE69416363T2 (de) | 1993-03-23 | 1994-03-22 | Abbildendes festkörperbauteil und herstellungsverfahren dafür |
Country Status (4)
Country | Link |
---|---|
US (2) | US5574293A (de) |
EP (1) | EP0642179B1 (de) |
DE (1) | DE69416363T2 (de) |
WO (1) | WO1994022173A1 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3497627B2 (ja) * | 1994-12-08 | 2004-02-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP3645378B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3645380B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置 |
JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6478263B1 (en) | 1997-01-17 | 2002-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
JP3645379B2 (ja) | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7056381B1 (en) * | 1996-01-26 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device |
US6180439B1 (en) | 1996-01-26 | 2001-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating a semiconductor device |
JP3865145B2 (ja) * | 1996-01-26 | 2007-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
GB9603052D0 (en) * | 1996-02-14 | 1996-04-10 | Philips Electronics Nv | Image sensor |
US6100562A (en) | 1996-03-17 | 2000-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6746905B1 (en) | 1996-06-20 | 2004-06-08 | Kabushiki Kaisha Toshiba | Thin film transistor and manufacturing process therefor |
JP3126661B2 (ja) | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP3634089B2 (ja) * | 1996-09-04 | 2005-03-30 | 株式会社半導体エネルギー研究所 | 表示装置 |
US5994164A (en) * | 1997-03-18 | 1999-11-30 | The Penn State Research Foundation | Nanostructure tailoring of material properties using controlled crystallization |
US5847422A (en) * | 1997-05-19 | 1998-12-08 | Foveonics, Inc. | MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data |
US6001540A (en) * | 1998-06-03 | 1999-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Microlens process |
KR100291179B1 (ko) * | 1998-06-29 | 2001-07-12 | 박종섭 | 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법 |
JP4174862B2 (ja) * | 1998-08-04 | 2008-11-05 | ソニー株式会社 | 薄膜トランジスタの製造方法および半導体装置の製造方法 |
KR100631011B1 (ko) * | 1999-08-12 | 2006-10-04 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 제조방법 |
US7751600B2 (en) | 2000-04-18 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | System and method for identifying an individual |
AU6071501A (en) * | 2000-06-08 | 2001-12-17 | Showa Denko Kabushiki Kaisha | Semiconductor light-emitting device |
TWI256976B (en) * | 2000-08-04 | 2006-06-21 | Hannstar Display Corp | Method of patterning an ITO layer |
US6580053B1 (en) * | 2000-08-31 | 2003-06-17 | Sharp Laboratories Of America, Inc. | Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films |
KR100643038B1 (ko) * | 2000-08-31 | 2006-11-10 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터형 광센서 어레이 기판 |
JP2005005509A (ja) * | 2003-06-12 | 2005-01-06 | Canon Inc | 薄膜トランジスタ及びその製造方法 |
TWI260093B (en) * | 2005-01-25 | 2006-08-11 | Au Optronics Corp | Thin film transistor with microlens structure, forming method thereof and TFT display panel comprising thereof |
DE602006001686D1 (de) * | 2005-05-23 | 2008-08-21 | Semiconductor Energy Lab | Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung |
WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8514165B2 (en) * | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR20080099594A (ko) * | 2007-05-10 | 2008-11-13 | 삼성전자주식회사 | 광센서와, 이를 구비한 표시 패널 및 표시 장치 |
JP2012019146A (ja) * | 2010-07-09 | 2012-01-26 | Sony Corp | 撮像装置、表示撮像装置および電子機器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2284984A1 (fr) * | 1974-09-13 | 1976-04-09 | Commissariat Energie Atomique | Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements |
US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
JPS6329924A (ja) * | 1986-07-23 | 1988-02-08 | Komatsu Ltd | 半導体装置の製造方法 |
JPH0210877A (ja) * | 1988-06-29 | 1990-01-16 | Matsushita Electric Ind Co Ltd | 光学的パターン検出装置の製造方法 |
JPH02181419A (ja) * | 1989-01-06 | 1990-07-16 | Hitachi Ltd | レーザアニール方法 |
JPH02210877A (ja) * | 1989-02-10 | 1990-08-22 | Seiko Epson Corp | 固体撮像装置 |
JPH039562A (ja) * | 1989-06-07 | 1991-01-17 | Sharp Corp | 半導体装置 |
JPH0323671A (ja) * | 1989-06-21 | 1991-01-31 | Nippon Sheet Glass Co Ltd | 集積化機能デバイス及びその製造方法並びにこのデバイスを用いた機能モジュール |
EP0459763B1 (de) * | 1990-05-29 | 1997-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Dünnfilmtransistoren |
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
US5221365A (en) * | 1990-10-22 | 1993-06-22 | Sanyo Electric Co., Ltd. | Photovoltaic cell and method of manufacturing polycrystalline semiconductive film |
KR960001611B1 (ko) * | 1991-03-06 | 1996-02-02 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법 |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
MY109592A (en) * | 1992-11-16 | 1997-03-31 | Tokyo Electron Ltd | Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals. |
-
1994
- 1994-03-22 US US08/343,492 patent/US5574293A/en not_active Expired - Lifetime
- 1994-03-22 DE DE69416363T patent/DE69416363T2/de not_active Expired - Lifetime
- 1994-03-22 EP EP94910053A patent/EP0642179B1/de not_active Expired - Lifetime
- 1994-03-22 WO PCT/JP1994/000452 patent/WO1994022173A1/ja active IP Right Grant
-
1995
- 1995-06-07 US US08/477,104 patent/US5591988A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69416363D1 (de) | 1999-03-18 |
EP0642179B1 (de) | 1999-02-03 |
EP0642179A4 (de) | 1995-08-30 |
WO1994022173A1 (en) | 1994-09-29 |
US5591988A (en) | 1997-01-07 |
US5574293A (en) | 1996-11-12 |
EP0642179A1 (de) | 1995-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: PATENTANWAELTE KNOBLAUCH UND KNOBLAUCH, 60322 FRANK |