DE69415371T2 - Herstellungsverfahren für einen Bump mit einer aufgerauhten Oberfläche und Halbleiterbauelement mit dem Bump und ein Verfahren zur Montage eines Halbleiterelements auf eine Leiterplatte - Google Patents

Herstellungsverfahren für einen Bump mit einer aufgerauhten Oberfläche und Halbleiterbauelement mit dem Bump und ein Verfahren zur Montage eines Halbleiterelements auf eine Leiterplatte

Info

Publication number
DE69415371T2
DE69415371T2 DE69415371T DE69415371T DE69415371T2 DE 69415371 T2 DE69415371 T2 DE 69415371T2 DE 69415371 T DE69415371 T DE 69415371T DE 69415371 T DE69415371 T DE 69415371T DE 69415371 T2 DE69415371 T2 DE 69415371T2
Authority
DE
Germany
Prior art keywords
bump
mounting
manufacturing
circuit board
printed circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69415371T
Other languages
English (en)
Other versions
DE69415371D1 (de
Inventor
Yoshihiro Tomura
Yoshihiro Bessho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69415371D1 publication Critical patent/DE69415371D1/de
Publication of DE69415371T2 publication Critical patent/DE69415371T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1183—Reworking, e.g. shaping
    • H01L2224/1184—Reworking, e.g. shaping involving a mechanical process, e.g. planarising the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1356—Disposition
    • H01L2224/13562—On the entire exposed surface of the core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1357—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13699—Material of the matrix
    • H01L2224/1379—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13798—Fillers
    • H01L2224/13799—Base material
    • H01L2224/138—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13838—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13839—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13798—Fillers
    • H01L2224/13799—Base material
    • H01L2224/138—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13838—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13844—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13698—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/13798—Fillers
    • H01L2224/13799—Base material
    • H01L2224/138—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13838—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13847—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8134—Bonding interfaces of the bump connector
    • H01L2224/81345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/81499—Material of the matrix
    • H01L2224/8159—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/81498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/81598—Fillers
    • H01L2224/81599—Base material
    • H01L2224/816—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
DE69415371T 1993-01-28 1994-01-28 Herstellungsverfahren für einen Bump mit einer aufgerauhten Oberfläche und Halbleiterbauelement mit dem Bump und ein Verfahren zur Montage eines Halbleiterelements auf eine Leiterplatte Expired - Fee Related DE69415371T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1255993 1993-01-28

Publications (2)

Publication Number Publication Date
DE69415371D1 DE69415371D1 (de) 1999-02-04
DE69415371T2 true DE69415371T2 (de) 1999-05-20

Family

ID=11808705

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69415371T Expired - Fee Related DE69415371T2 (de) 1993-01-28 1994-01-28 Herstellungsverfahren für einen Bump mit einer aufgerauhten Oberfläche und Halbleiterbauelement mit dem Bump und ein Verfahren zur Montage eines Halbleiterelements auf eine Leiterplatte

Country Status (3)

Country Link
US (2) US5545589A (de)
EP (1) EP0616363B1 (de)
DE (1) DE69415371T2 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665639A (en) * 1994-02-23 1997-09-09 Cypress Semiconductor Corp. Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal
US6826827B1 (en) * 1994-12-29 2004-12-07 Tessera, Inc. Forming conductive posts by selective removal of conductive material
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JP2796070B2 (ja) * 1995-04-28 1998-09-10 松下電器産業株式会社 プローブカードの製造方法
JP2842378B2 (ja) * 1996-05-31 1999-01-06 日本電気株式会社 電子回路基板の高密度実装構造
TW324847B (en) * 1996-12-13 1998-01-11 Ind Tech Res Inst The structure of composite bump
US5670418A (en) * 1996-12-17 1997-09-23 International Business Machines Corporation Method of joining an electrical contact element to a substrate
KR100232678B1 (ko) * 1996-12-18 1999-12-01 구본준 돌기가 형성된 범프 및 그 제조방법
US5929521A (en) * 1997-03-26 1999-07-27 Micron Technology, Inc. Projected contact structure for bumped semiconductor device and resulting articles and assemblies
JP3030271B2 (ja) * 1997-05-19 2000-04-10 富士通株式会社 半導体部品の実装方法
JPH1126631A (ja) * 1997-07-02 1999-01-29 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
US6204454B1 (en) * 1997-12-27 2001-03-20 Tdk Corporation Wiring board and process for the production thereof
US6137063A (en) 1998-02-27 2000-10-24 Micron Technology, Inc. Electrical interconnections
US6010340A (en) * 1998-03-04 2000-01-04 Internatinal Business Machines Corporation Solder column tip compliancy modification for use in a BGA socket connector
JP4085536B2 (ja) * 1998-11-09 2008-05-14 株式会社日本自動車部品総合研究所 電気機器およびその製造方法並びに圧接型半導体装置
US6138894A (en) * 1998-11-25 2000-10-31 Intermedics Inc. Method for coupling a circuit component to a substrate
US6246587B1 (en) 1998-12-03 2001-06-12 Intermedics Inc. Surface mounted device with grooves on a termination lead and methods of assembly
JP2000195984A (ja) * 1998-12-24 2000-07-14 Shinko Electric Ind Co Ltd 半導体装置用キャリア基板及びその製造方法及び半導体装置及びその製造方法
JP3693843B2 (ja) * 1999-02-25 2005-09-14 株式会社日立製作所 液晶表示装置
US6110816A (en) * 1999-03-05 2000-08-29 Taiwan Semiconductor Manufacturing Company Method for improving bondability for deep-submicron integrated circuit package
US6442033B1 (en) * 1999-09-24 2002-08-27 Virginia Tech Intellectual Properties, Inc. Low-cost 3D flip-chip packaging technology for integrated power electronics modules
JP2001148401A (ja) * 1999-11-18 2001-05-29 Seiko Epson Corp 半導体装置およびその製造方法
US6469394B1 (en) 2000-01-31 2002-10-22 Fujitsu Limited Conductive interconnect structures and methods for forming conductive interconnect structures
US6623283B1 (en) * 2000-03-08 2003-09-23 Autosplice, Inc. Connector with base having channels to facilitate surface mount solder attachment
KR100628900B1 (ko) * 2000-04-25 2006-09-27 후지쯔 가부시끼가이샤 반도체 칩의 실장방법
JP2002026198A (ja) * 2000-07-04 2002-01-25 Nec Corp 半導体装置及びその製造方法
JP3491827B2 (ja) * 2000-07-25 2004-01-26 関西日本電気株式会社 半導体装置及びその製造方法
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
JP2002222832A (ja) * 2001-01-29 2002-08-09 Nec Corp 半導体装置及び半導体素子の実装方法
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
JP2002243795A (ja) * 2001-02-15 2002-08-28 Mitsubishi Electric Corp ベアチップキャリア、及び半導体装置の製造方法
US7067916B2 (en) * 2001-06-20 2006-06-27 International Business Machines Corporation Extension of fatigue life for C4 solder ball to chip connection
US6512301B1 (en) * 2001-07-12 2003-01-28 Intel Corporation Making interconnections to a non-flat surface
JP3761461B2 (ja) * 2001-12-13 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US7015590B2 (en) * 2003-01-10 2006-03-21 Samsung Electronics Co., Ltd. Reinforced solder bump structure and method for forming a reinforced solder bump
US6959856B2 (en) * 2003-01-10 2005-11-01 Samsung Electronics Co., Ltd. Solder bump structure and method for forming a solder bump
JP3972846B2 (ja) * 2003-03-25 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
CN100416343C (zh) * 2004-01-21 2008-09-03 友达光电股份有限公司 增加金属连线可靠度的结构
US20050221635A1 (en) * 2004-03-30 2005-10-06 International Business Machines Corporation Micro-bumps to enhance lga interconnections
JP4627632B2 (ja) * 2004-05-17 2011-02-09 Ｏｋｉセミコンダクタ株式会社 半導体装置
KR100602621B1 (ko) * 2004-06-16 2006-07-19 한국조폐공사 조립식 콤비카드 및 이의 제조방법
US7453157B2 (en) 2004-06-25 2008-11-18 Tessera, Inc. Microelectronic packages and methods therefor
US7396752B1 (en) * 2004-11-10 2008-07-08 Altera Corporation Method and apparatus for reducing cold joint defects in flip chip products
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
US7361581B2 (en) * 2004-11-23 2008-04-22 International Business Machines Corporation High surface area aluminum bond pad for through-wafer connections to an electronic package
JP4251458B2 (ja) * 2005-12-21 2009-04-08 Ｔｄｋ株式会社 チップ部品の実装方法及び回路基板
CN100458508C (zh) * 2006-06-12 2009-02-04 友达光电股份有限公司 信号传输组件及应用其的显示装置
DE102006028719B4 (de) * 2006-06-20 2008-05-08 Infineon Technologies Ag Halbleiterbauteil mit Halbleiterchipstapel und Verbindungselementen sowie Verfahren zur Herstellung des Halbleiterbauteils
WO2008020392A2 (en) * 2006-08-17 2008-02-21 Nxp B.V. Semiconductor component and assembly with projecting electrode
US8080859B2 (en) * 2006-08-17 2011-12-20 Nxp B.V. Reducing stress between a substrate and a projecting electrode on the substrate
TWI309880B (en) * 2006-09-11 2009-05-11 Siliconware Precision Industries Co Ltd Semiconductor chip and package structure and fabrication method thereof
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
US20080150101A1 (en) * 2006-12-20 2008-06-26 Tessera, Inc. Microelectronic packages having improved input/output connections and methods therefor
JP4454658B2 (ja) * 2007-12-04 2010-04-21 パナソニック株式会社 電子部品製造方法
DE102008005547B4 (de) * 2008-01-23 2013-08-29 Infineon Technologies Ag Leistungshalbleitermodul und Schaltungsanordnung mit einem Leistungshalbleitermodul
JP2009246166A (ja) * 2008-03-31 2009-10-22 Fujitsu Ltd 電子部品パッケージおよび基板ユニット並びにプリント配線板およびその製造方法
US20100044416A1 (en) * 2008-08-21 2010-02-25 Nec Corporation Method of manufacturing electronic components having bump
JP2010087229A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器
CN102244055A (zh) * 2010-05-12 2011-11-16 瑞鼎科技股份有限公司 一种集成电路芯片及其制造方法
US8901736B2 (en) * 2010-05-28 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Strength of micro-bump joints
TWM408126U (en) * 2010-12-10 2011-07-21 Chunghwa Picture Tubes Ltd Conductive pad structure, chip package structure and active device array substrate
US9137903B2 (en) 2010-12-21 2015-09-15 Tessera, Inc. Semiconductor chip assembly and method for making same
US8409979B2 (en) 2011-05-31 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties
DE102011118930A1 (de) * 2011-11-21 2013-05-23 Micronas Gmbh Halbleiter-Gassensor
DE102011119957A1 (de) * 2011-12-02 2013-06-06 Micronas Gmbh Befestigungsvorrichtung
CN102543910A (zh) * 2012-02-06 2012-07-04 三星半导体(中国)研究开发有限公司 芯片封装件及其制造方法
CN104205328B (zh) 2012-03-15 2017-05-10 富士电机株式会社 半导体装置及其制造方法
JP6197319B2 (ja) * 2013-03-21 2017-09-20 富士通株式会社 半導体素子の実装方法
US9583470B2 (en) * 2013-12-19 2017-02-28 Intel Corporation Electronic device with solder pads including projections
US11018099B2 (en) * 2014-11-26 2021-05-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure having a conductive bump with a plurality of bump segments
CN104465424A (zh) * 2014-12-12 2015-03-25 南通富士通微电子股份有限公司 一种金属凸点制作方法
WO2016201289A1 (en) * 2015-06-10 2016-12-15 Translarity, Inc. Shaping of contact structures for semiconductor test, and associated systems and methods
JP2017224736A (ja) * 2016-06-15 2017-12-21 富士電機株式会社 半導体装置、製造方法、及び導電性ポスト
KR102446203B1 (ko) * 2017-12-12 2022-09-23 삼성디스플레이 주식회사 구동칩 및 이를 포함하는 표시 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698075A (en) * 1969-11-05 1972-10-17 Motorola Inc Ultrasonic metallic sheet-frame bonding
US3737986A (en) * 1971-11-26 1973-06-12 Western Electric Co Explosive bonding of workpieces
US3995845A (en) * 1972-12-26 1976-12-07 Rca Corporation Ultrasonic wire bonding chuck
US4172907A (en) * 1977-12-29 1979-10-30 Honeywell Information Systems Inc. Method of protecting bumped semiconductor chips
FR2492164B1 (fr) * 1980-10-15 1987-01-23 Radiotechnique Compelec Procede de realisation simultanee de liaisons electriques multiples, notamment pour le raccordement electrique d'une micro-plaquette de semiconducteurs
GB2130435B (en) * 1982-10-27 1986-10-15 Tokyo Shibaura Electric Co Semiconductor strain sensor and method for manufacturing the same
JPH0695519B2 (ja) * 1985-12-26 1994-11-24 株式会社東芝 バンプ形成方法
JPS62285446A (ja) * 1986-06-03 1987-12-11 Matsushita Electric Ind Co Ltd 電気的接続接点の形成方法
KR910006967B1 (ko) * 1987-11-18 1991-09-14 가시오 게이상기 가부시기가이샤 반도체 장치의 범프 전극 구조 및 그 형성 방법
US5014111A (en) * 1987-12-08 1991-05-07 Matsushita Electric Industrial Co., Ltd. Electrical contact bump and a package provided with the same
JPH063820B2 (ja) * 1988-07-25 1994-01-12 松下電器産業株式会社 半導体装置の実装方法
US4937653A (en) * 1988-07-21 1990-06-26 American Telephone And Telegraph Company Semiconductor integrated circuit chip-to-chip interconnection scheme
JPH02177546A (ja) * 1988-12-28 1990-07-10 Fujitsu Ltd 半導体集積回路の製造方法
JPH0797597B2 (ja) * 1989-06-02 1995-10-18 松下電器産業株式会社 半導体装置
JPH0318826A (ja) * 1989-06-15 1991-01-28 Matsushita Electric Ind Co Ltd 液晶表示素子
JPH04188657A (ja) * 1990-11-19 1992-07-07 Nec Kyushu Ltd 半導体装置用パッケージ

Also Published As

Publication number Publication date
US6088236A (en) 2000-07-11
EP0616363A1 (de) 1994-09-21
US5545589A (en) 1996-08-13
EP0616363B1 (de) 1998-12-23
DE69415371D1 (de) 1999-02-04

Similar Documents

Publication Publication Date Title
DE69415371D1 (de) Herstellungsverfahren für einen Bump mit einer aufgerauhten Oberfläche und Halbleiterbauelement mit dem Bump und ein Verfahren zur Montage eines Halbleiterelements auf eine Leiterplatte
DE69426347D1 (de) Verfahren zum Montieren einer Halbleiteranordnung auf einer Schaltungsplatte und eine Schaltungsplatte mit einer Halbleiteranordnung darauf
DE69737375D1 (de) Verfahren zur Befestigung eines elektronischen Bauteils auf einer Leiterplatte und System zum Ausführen des Verfahrens
DE69635603D1 (de) Höckerkontakt für eine Leiterplatte und Halbleitermodul mit derselben
DE69128140T2 (de) Halbleiteranordnung mit einer Schaltungsplatte zum Zusammenschalten und Verfahren zur Herstellung
ATE375004T1 (de) Eine integrierte schaltung auf einem ultrabiegsamen substrat und ein verfahren für eine drahtverbindung zwischen einer integrierten schaltung und einem ultrabiegsamen substrat
DE857348T1 (de) Mit einer auf einem substrat gedruckten leitfähigen flüssigkeit hergestelltes bauteil für elektrische schaltungen
DE69535656D1 (de) Verfahren und Anordnung zur Befestigung von zwei Elementen, wie einem integrierten Schaltungsstrahler, auf einer gedruckten Schaltungskarte
DE69118642D1 (de) Montageeinrichtung zum Montieren von einem elektronischen Bauelement über einem Substrat bei der Oberflächemontagetechnologie
DE69632516D1 (de) Verfahren und Vorrichtung zum Bestücken einer Leiterplatte mit elektronischen Bauteilen
DE673088T1 (de) Koaxialbinderelement zum Verbinden eines Koaxialkabels mit einer elektronischen gedruckten Schaltung und ein solches Verbinderelement aufweisender Verbinder.
DE69316709T2 (de) Vorrichtung zur Montage von elektronischen Bauteilen auf einer Leiterplatte
DE69113679D1 (de) Verfahren und Bauteil zum Montieren von Bauelementen auf einer Leiterplatte.
DE69401291D1 (de) Integrierte Schaltung für Speicherkarte und Verfahren zum Abzählen der Einheiten in einer Speicherkarte
DE69404082T2 (de) Verfahren zum Montieren eines elektronischen Bauelements auf einer flexiblen Leiterplatte
DE69325751D1 (de) Verfahren zum Testen des Kontakts zwischen einem integrierten Baustein und einer Leiterplatte
DE69514067D1 (de) Verbinder für ein Substrat mit einer elektronischen Schaltung
DE69215771D1 (de) Verfahren zur Montage elektronischer Bauteile auf einem Schaltkreissubstrat und Schaltkreissubstrat mit darauf montierten elektronischen Bauteilen
DE69514895D1 (de) Verfahren zur Montage eines Anschlussstiftes in einer flexiblen Leiterplatte
DE69104734T2 (de) Elektronisches Bauteil auf der Oberfläche einer gedruckten Schaltplatine montierbar und Verfahren zur Montage.
DE59005035D1 (de) Leiterplatte für elektronische Steuergeräte und Verfahren zum Herstellen einer solchen Leiterplatte.
DE69107763T2 (de) Mehrschichtige leiterplatte und verfahren zum aufbau in einer vorherbestimmten reihenfolge.
DE69104678T2 (de) Verfahren zur Montage von elektronischen Bauteilen auf einer Leiterplatte.
DE3787658T2 (de) Reparaturvorrichtung und Reparaturverfahren für Leiterplatten mit Bauteilen in Oberflächenmontagetechnologie.
DE69509032D1 (de) Verbinder für ein Substrat mit einer elektronischen Schaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee