DE69414311D1 - Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate - Google Patents

Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate

Info

Publication number
DE69414311D1
DE69414311D1 DE69414311T DE69414311T DE69414311D1 DE 69414311 D1 DE69414311 D1 DE 69414311D1 DE 69414311 T DE69414311 T DE 69414311T DE 69414311 T DE69414311 T DE 69414311T DE 69414311 D1 DE69414311 D1 DE 69414311D1
Authority
DE
Germany
Prior art keywords
field effect
insulated gate
gate bipolar
semiconductor device
bipolar field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414311T
Other languages
English (en)
Other versions
DE69414311T2 (de
Inventor
Gehan Anil Amaratunga
Florin Udrea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69414311D1 publication Critical patent/DE69414311D1/de
Application granted granted Critical
Publication of DE69414311T2 publication Critical patent/DE69414311T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
DE69414311T 1993-07-05 1994-06-30 Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate Expired - Fee Related DE69414311T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB939313843A GB9313843D0 (en) 1993-07-05 1993-07-05 A semiconductor device comprising an insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
DE69414311D1 true DE69414311D1 (de) 1998-12-10
DE69414311T2 DE69414311T2 (de) 1999-06-02

Family

ID=10738303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414311T Expired - Fee Related DE69414311T2 (de) 1993-07-05 1994-06-30 Halbleiteranordnung mit einer Bipolarfeldeffektanordnung mit isoliertem Gate

Country Status (5)

Country Link
US (1) US5489787A (de)
EP (1) EP0633611B1 (de)
JP (1) JPH0758332A (de)
DE (1) DE69414311T2 (de)
GB (1) GB9313843D0 (de)

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JP4957840B2 (ja) 2010-02-05 2012-06-20 株式会社デンソー 絶縁ゲート型半導体装置
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JP2014508409A (ja) * 2011-02-12 2014-04-03 フリースケール セミコンダクター インコーポレイテッド 半導体素子及び関連する形成方法
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
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CN103021856A (zh) * 2011-09-28 2013-04-03 比亚迪股份有限公司 具有超级结的半导体结构的形成方法及半导体结构
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CN103578983A (zh) * 2012-08-01 2014-02-12 无锡华润上华半导体有限公司 场中止型绝缘栅型双极晶体管及其制造方法
JP6048317B2 (ja) 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
CN104299907A (zh) * 2013-07-19 2015-01-21 北大方正集团有限公司 Vdmos器件的制作方法
CN104795327B (zh) * 2014-01-16 2017-12-15 北大方正集团有限公司 一种制作平面型vdmos的方法及平面型vdmos
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN104409485B (zh) * 2014-12-05 2018-10-23 国家电网公司 具有低反向传输电容抗闩锁结构的平面栅igbt及其制造方法
CN107546257A (zh) * 2017-08-23 2018-01-05 恒泰柯半导体（上海）有限公司 金属‑氧化物沟道半导体场效应晶体管的外延层结构
CN109599433A (zh) * 2018-12-10 2019-04-09 泉州臻美智能科技有限公司 一种金属氧化物半导体关断晶闸管及其制作方法
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Also Published As

Publication number Publication date
US5489787A (en) 1996-02-06
GB9313843D0 (en) 1993-08-18
EP0633611B1 (de) 1998-11-04
DE69414311T2 (de) 1999-06-02
JPH0758332A (ja) 1995-03-03
EP0633611A1 (de) 1995-01-11

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