DE69413751D1 - Piezoelektrischer Resonator und Verfahren zur Herstellung - Google Patents

Piezoelektrischer Resonator und Verfahren zur Herstellung

Info

Publication number
DE69413751D1
DE69413751D1 DE69413751T DE69413751T DE69413751D1 DE 69413751 D1 DE69413751 D1 DE 69413751D1 DE 69413751 T DE69413751 T DE 69413751T DE 69413751 T DE69413751 T DE 69413751T DE 69413751 D1 DE69413751 D1 DE 69413751D1
Authority
DE
Germany
Prior art keywords
manufacturing
piezoelectric resonator
resonator
piezoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413751T
Other languages
English (en)
Other versions
DE69413751T2 (de
Inventor
Yoshihiro Tomita
Akihiro Kanaboshi
Yutaka Taguchi
Kazuo Eda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69413751D1 publication Critical patent/DE69413751D1/de
Application granted granted Critical
Publication of DE69413751T2 publication Critical patent/DE69413751T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4981—Utilizing transitory attached element or associated separate material
    • Y10T29/49812—Temporary protective coating, impregnation, or cast layer
DE69413751T 1993-06-10 1994-06-09 Piezoelektrischer Resonator und Verfahren zur Herstellung Expired - Lifetime DE69413751T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5138192A JPH06350371A (ja) 1993-06-10 1993-06-10 圧電デバイスの製造方法

Publications (2)

Publication Number Publication Date
DE69413751D1 true DE69413751D1 (de) 1998-11-12
DE69413751T2 DE69413751T2 (de) 1999-06-10

Family

ID=15216234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413751T Expired - Lifetime DE69413751T2 (de) 1993-06-10 1994-06-09 Piezoelektrischer Resonator und Verfahren zur Herstellung

Country Status (4)

Country Link
US (1) US5666706A (de)
EP (1) EP0631384B1 (de)
JP (1) JPH06350371A (de)
DE (1) DE69413751T2 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5856895A (en) * 1997-07-02 1999-01-05 Seagate Technology, Inc. Internal accelerometer for improved servo performance and shock sensing on high performance disc drive heads
FI108583B (fi) * 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
US6060818A (en) * 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
JP2001171132A (ja) * 1999-12-10 2001-06-26 Samsung Electro Mech Co Ltd インクジェットプリンタヘッド用アクチュエータの製造方法
US6329305B1 (en) * 2000-02-11 2001-12-11 Agere Systems Guardian Corp. Method for producing devices having piezoelectric films
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
GB0016861D0 (en) * 2000-07-11 2000-08-30 Univ Cranfield Improvements in or relating to filters
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6377137B1 (en) * 2000-09-11 2002-04-23 Agilent Technologies, Inc. Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness
US6393681B1 (en) * 2001-01-19 2002-05-28 Magnecomp Corp. PZT microactuator processing
WO2004001849A2 (en) * 2002-04-30 2003-12-31 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
US6816035B2 (en) * 2002-08-08 2004-11-09 Intel Corporation Forming film bulk acoustic resonator filters
US7994877B1 (en) 2008-11-10 2011-08-09 Hrl Laboratories, Llc MEMS-based quartz hybrid filters and a method of making the same
US8766745B1 (en) 2007-07-25 2014-07-01 Hrl Laboratories, Llc Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same
US7830074B2 (en) * 2006-08-08 2010-11-09 Hrl Laboratories, Llc Integrated quartz oscillator on an active electronic substrate
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US8162839B2 (en) * 2003-08-27 2012-04-24 Microtech Medical Technologies Ltd. Protected passive resonating sensors
AU2003304673A1 (en) * 2003-11-27 2005-06-17 Seung-Hwan Yi Piezoelectric microspeaker with corrugated diaphragm
EP1548935A1 (de) * 2003-12-24 2005-06-29 Interuniversitair Microelektronica Centrum Vzw Mikrostrukturierter Dünnfilmresonator
EP1548768B1 (de) 2003-12-24 2012-02-22 Imec Mikrostrukturierter Dünnfilmresonator
US7372346B2 (en) 2003-12-24 2008-05-13 Interuniversitair Microelektronica Centrum (Imec) Acoustic resonator
US7202560B2 (en) * 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
JP2006203372A (ja) * 2005-01-18 2006-08-03 Fujitsu Media Device Kk 圧電振動子及びその製造方法
JP4315174B2 (ja) * 2006-02-16 2009-08-19 セイコーエプソン株式会社 ラム波型高周波デバイスの製造方法
DE102006023165B4 (de) * 2006-05-17 2008-02-14 Infineon Technologies Ag Verfahren zur Herstellung eines akustischen Spiegels aus alternierend angeordneten Schichten hoher und niedriger akustischer Impedanz
KR100791084B1 (ko) 2006-06-27 2008-01-03 충주대학교 산학협력단 압전형 초소형 스피커 및 그 제조 방법
US7555824B2 (en) * 2006-08-09 2009-07-07 Hrl Laboratories, Llc Method for large scale integration of quartz-based devices
US20100020311A1 (en) * 2007-06-14 2010-01-28 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US7884930B2 (en) * 2007-06-14 2011-02-08 Hrl Laboratories, Llc Integrated quartz biological sensor and method
TWI335101B (en) * 2007-06-27 2010-12-21 Ind Tech Res Inst Vertical coupling structure for non-adjacent resonators
CN101350437B (zh) * 2007-07-20 2012-06-27 财团法人工业技术研究院 非相邻垂直共振腔耦合结构
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
JP5270412B2 (ja) * 2008-03-24 2013-08-21 日本碍子株式会社 バルク弾性波装置の製造方法
US7647688B1 (en) * 2008-08-11 2010-01-19 Hrl Laboratories, Llc Method of fabricating a low frequency quartz resonator
JP4743258B2 (ja) * 2008-10-31 2011-08-10 株式会社村田製作所 圧電デバイスの製造方法
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
JP5814774B2 (ja) * 2010-12-22 2015-11-17 日本碍子株式会社 複合基板及び複合基板の製造方法
US8567041B1 (en) * 2011-06-15 2013-10-29 Hrl Laboratories, Llc Method of fabricating a heated quartz crystal resonator
US9250074B1 (en) 2013-04-12 2016-02-02 Hrl Laboratories, Llc Resonator assembly comprising a silicon resonator and a quartz resonator
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
US10110198B1 (en) 2015-12-17 2018-10-23 Hrl Laboratories, Llc Integrated quartz MEMS tuning fork resonator/oscillator
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
WO2018039085A1 (en) * 2016-08-23 2018-03-01 Sharp Kabushiki Kaisha Fluidic assembly process using piezoelectric plates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL122607C (de) * 1961-07-26 1900-01-01
FR2182295A5 (de) * 1972-04-25 1973-12-07 Thomson Csf
US4009516A (en) * 1976-03-29 1977-03-01 Honeywell Inc. Pyroelectric detector fabrication
JPS6227040A (ja) * 1985-07-26 1987-02-05 Sapporo Breweries Ltd 物質を澱粉に吸着あるいは包接させる方法
JPS63285195A (ja) * 1987-05-19 1988-11-22 Yokogawa Electric Corp 単結晶水晶体の接合方法
JP2643620B2 (ja) * 1991-03-13 1997-08-20 松下電器産業株式会社 電圧制御発振器とその製造方法
DE69232277T2 (de) * 1991-09-12 2002-08-08 Matsushita Electric Ind Co Ltd Elektroakustische hybride integrierte Schaltung und Methode zu deren Herstellung

Also Published As

Publication number Publication date
US5666706A (en) 1997-09-16
JPH06350371A (ja) 1994-12-22
DE69413751T2 (de) 1999-06-10
EP0631384A1 (de) 1994-12-28
EP0631384B1 (de) 1998-10-07

Similar Documents

Publication Publication Date Title
DE69413751D1 (de) Piezoelektrischer Resonator und Verfahren zur Herstellung
DE69318159D1 (de) Verfahren zur Herstellung von integrale elastische Stütze und derart hergestellte Stütze
DE69316810D1 (de) SiGe-SOI-MOSFET und Verfahren zur Herstellung
DE69413860T2 (de) Transistoren und Verfahren zur Herstellung
DE69327483D1 (de) Diode und Verfahren zur Herstellung
DE69515189D1 (de) SOI-Substrat und Verfahren zur Herstellung
DE69330499D1 (de) Piezoelektrischer Resonator und Herstellungsverfahren derselben
DE69615959D1 (de) Piezoelektrische Anordnung und Verfahren zur Herstellung
DE69933907D1 (de) Akustischer Resonator und Verfahren zur Herstellung desselben
DE69528625D1 (de) Mehrschichtige Formteile und Verfahren zur Herstellung derselben
DE59401845D1 (de) Rotor und Verfahren zur Herstellung desselben
DE69300528T2 (de) Mikropumpe und Verfahren zur Herstellung.
DE69326373D1 (de) Elektrokatalysator und Verfahren zur Herstellung
DE69412769D1 (de) Kapazitiver Sensor und Verfahren zur Herstellung
DE69431023T2 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69723148D1 (de) Piezoelektrischer Resonator und Verfahren zu seiner Herstellung
DE69426336T2 (de) Mit Diamant bedecktes Glied und Verfahren zur Herstellung
DE69304455D1 (de) Halbleiterlaser und Verfahren zur Herstellung
DE69400093T2 (de) Übungsgeschloss und Verfahren zur Herstellung
DE69404127D1 (de) Verfahren zur herstellung von ultrastabilen ringresonatoren und lasern
DE69123642D1 (de) MESFET und Verfahren zur Herstellung
DE69406271T2 (de) Piezoelektrisches bauelement und verfahren zu seiner herstellung
DE69419516D1 (de) Verfahren zur herstellung von hexafluorocyclobuten und verfahren zur herstellung von hexafluorocyclobutan
DE69510415D1 (de) Körper mit Wabenstruktur und Verfahren zur Herstellung derselben
DE69324587D1 (de) Brillengestell und Verfahren zur Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP