DE69411448T2 - Verfahren zum Herstellen von Silizium enthaltenden Kathoden-Targets - Google Patents

Verfahren zum Herstellen von Silizium enthaltenden Kathoden-Targets

Info

Publication number
DE69411448T2
DE69411448T2 DE69411448T DE69411448T DE69411448T2 DE 69411448 T2 DE69411448 T2 DE 69411448T2 DE 69411448 T DE69411448 T DE 69411448T DE 69411448 T DE69411448 T DE 69411448T DE 69411448 T2 DE69411448 T2 DE 69411448T2
Authority
DE
Germany
Prior art keywords
producing silicon
containing cathode
cathode targets
targets
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69411448T
Other languages
English (en)
Other versions
DE69411448D1 (de
Inventor
James Joseph Finley
Thomas Joseph Waynar
Larry Allen Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PPG Industries Ohio Inc
Original Assignee
PPG Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PPG Industries Inc filed Critical PPG Industries Inc
Publication of DE69411448D1 publication Critical patent/DE69411448D1/de
Application granted granted Critical
Publication of DE69411448T2 publication Critical patent/DE69411448T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K2035/008Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of silicium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/002Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of light metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/005Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of a refractory metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • B23K35/007Interlayers, transition pieces for metallurgical bonding of workpieces at least one of the workpieces being of copper or another noble metal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/922Static electricity metal bleed-off metallic stock
    • Y10S428/9335Product by special process
    • Y10S428/937Sprayed metal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674Ge- or Si-base component
DE69411448T 1993-04-02 1994-03-24 Verfahren zum Herstellen von Silizium enthaltenden Kathoden-Targets Expired - Fee Related DE69411448T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/042,185 US5965278A (en) 1993-04-02 1993-04-02 Method of making cathode targets comprising silicon

Publications (2)

Publication Number Publication Date
DE69411448D1 DE69411448D1 (de) 1998-08-13
DE69411448T2 true DE69411448T2 (de) 1999-01-28

Family

ID=21920509

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69411448T Expired - Fee Related DE69411448T2 (de) 1993-04-02 1994-03-24 Verfahren zum Herstellen von Silizium enthaltenden Kathoden-Targets

Country Status (6)

Country Link
US (1) US5965278A (de)
EP (1) EP0623415B1 (de)
JP (1) JP3548221B2 (de)
KR (1) KR0160169B1 (de)
DE (1) DE69411448T2 (de)
ES (1) ES2121107T3 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3311282B2 (ja) * 1997-10-13 2002-08-05 株式会社東芝 金属部材の接合方法及び接合体
SE512906C2 (sv) * 1998-10-02 2000-06-05 Ericsson Telefon Ab L M Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav
US6517908B1 (en) * 2000-01-10 2003-02-11 Nec Electronics, Inc. Method for making a test wafer from a substrate
US6619537B1 (en) * 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6858116B2 (en) * 2000-11-17 2005-02-22 Nikko Materials Company, Limited Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles
US6608432B2 (en) * 2001-04-03 2003-08-19 General Electric Company Cathode target mounting for cathodic arc cathodes
US6673220B2 (en) * 2001-05-21 2004-01-06 Sharp Laboratories Of America, Inc. System and method for fabricating silicon targets
WO2003084709A1 (de) * 2002-04-11 2003-10-16 Grillo-Werke Ag Verfahren zum verbinden von teilen
TWI269815B (en) * 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
WO2004065046A2 (en) * 2003-01-22 2004-08-05 Tosoh Smd, Inc. Brittle material sputtering target assembly and method of making same
US20090078570A1 (en) * 2003-08-11 2009-03-26 Wuwen Yi Target/backing plate constructions, and methods of forming target/backing plate constructions
US20080220558A1 (en) * 2007-03-08 2008-09-11 Integrated Photovoltaics, Inc. Plasma spraying for semiconductor grade silicon
US8498127B2 (en) * 2010-09-10 2013-07-30 Ge Intelligent Platforms, Inc. Thermal interface material for reducing thermal resistance and method of making the same
DE102011083791A1 (de) * 2011-09-29 2013-04-04 Robert Bosch Gmbh Verfahren zur Herstellung einer Lötverbindung
WO2013070679A1 (en) 2011-11-08 2013-05-16 Tosoh Smd, Inc. Silicon sputtering target with special surface treatment and good particle performance and methods of making the same
US9831073B2 (en) 2012-02-14 2017-11-28 Tosoh Smd, Inc. Low deflection sputtering target assembly and methods of making same
JP5799154B2 (ja) * 2013-12-13 2015-10-21 Jx日鉱日石金属株式会社 スパッタリングターゲット及びその製造方法
CN113458523A (zh) * 2021-07-05 2021-10-01 宁波江丰电子材料股份有限公司 一种钽靶材组件的焊接方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922385A (en) * 1973-07-02 1975-11-25 Gen Motors Corp Solderable multilayer contact for silicon semiconductor
US4035526A (en) * 1975-08-20 1977-07-12 General Motors Corporation Evaporated solderable multilayer contact for silicon semiconductor
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
US4209375A (en) * 1979-08-02 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Sputter target
DE2933835A1 (de) * 1979-08-21 1981-03-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum befestigen von in scheiben- oder plattenform vorliegenden targetmaterialien auf kuehlteller fuer aufstaeubanlagen
US4320251A (en) * 1980-07-28 1982-03-16 Solamat Inc. Ohmic contacts for solar cells by arc plasma spraying
DE3039821A1 (de) * 1980-10-22 1982-06-03 Robert Bosch Gmbh, 7000 Stuttgart Mehrschichtsystem fuer waermeschutzanwendung
US4492812A (en) * 1981-07-08 1985-01-08 Solarex Corporation Electrical contacts for a solar cell
EP0098852B1 (de) * 1982-01-20 1986-09-10 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Schmelzschweissverfahren
DE3318828C2 (de) * 1983-05-24 1986-01-02 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum Aufbonden von Targetmaterial
US4511600A (en) * 1984-02-10 1985-04-16 Solarex Corporation Solar cell metal spray process
DE3417732A1 (de) * 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
US4716086A (en) * 1984-12-19 1987-12-29 Ppg Industries, Inc. Protective overcoat for low emissivity coated article
US4690871A (en) * 1986-03-10 1987-09-01 Gordon Roy G Protective overcoat of titanium nitride films
US4847157A (en) * 1986-08-28 1989-07-11 Libbey-Owens-Ford Co. Glass coating method and resulting article
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
DE3716860A1 (de) * 1987-03-13 1988-09-22 Flachglas Ag Verfahren zum herstellen einer vorgespannten und/oder gebogenen glasscheibe mit silberschicht, danach hergestellte glasscheibe sowie deren verwendung
JPS63242948A (ja) * 1987-03-31 1988-10-07 Asahi Glass Co Ltd 熱線反射ガラス
GB8717959D0 (en) * 1987-07-29 1987-09-03 Pilkington Brothers Plc Coated glass
DE3902596A1 (de) * 1989-01-28 1990-08-02 Flachglas Ag Verfahren zum herstellen einer vorgespannten oder gebogenen glasscheibe mit rueckseitiger beschichtung, danach hergestellte glasscheibe sowie deren verwendung
DE3906453A1 (de) * 1989-03-01 1990-09-06 Leybold Ag Verfahren zum beschichten von substraten aus durchscheinendem werkstoff, beispielsweise aus floatglas
US5170291A (en) * 1989-12-19 1992-12-08 Leybold Aktiengesellschaft Coating, composed of an optically effective layer system, for substrates, whereby the layer system has a high anti-reflective effect, and method for manufacturing the coating
WO1992017622A1 (en) * 1991-04-08 1992-10-15 Tosoh Smd, Inc. Thermally compatible sputter target and backing plate assembly
US5185183A (en) * 1992-01-10 1993-02-09 Westinghouse Electric Corp. Apparatus and method for blasting and metal spraying a cylindrical surface

Also Published As

Publication number Publication date
JPH06346215A (ja) 1994-12-20
US5965278A (en) 1999-10-12
DE69411448D1 (de) 1998-08-13
EP0623415B1 (de) 1998-07-08
ES2121107T3 (es) 1998-11-16
KR0160169B1 (ko) 1999-01-15
EP0623415A1 (de) 1994-11-09
JP3548221B2 (ja) 2004-07-28

Similar Documents

Publication Publication Date Title
DE69622505T2 (de) Verfahren zum herstellen von luftreifen
DE69627642D1 (de) Verfahren zum herstellen von pflasterungen
DE59404214D1 (de) Verfahren zum herstellen von diglycerin
DE4410055B4 (de) Verfahren zum Herstellen einer elektrischen Durchführung
DE59814223D1 (de) Verfahren zum Herstellen von einkristallinen Strukturen
DE59305499D1 (de) Verfahren zum herstellen von dreidimensionalen objekten
DE69711416T2 (de) Verfahren zum herstellen von aethylacetat
DE69411448T2 (de) Verfahren zum Herstellen von Silizium enthaltenden Kathoden-Targets
DE69507607T2 (de) Verfahren zum herstellen von diamantfilmen
DE59408739D1 (de) Verfahren zum Herstellen von lackierten Teilen
AT399887B (de) Verfahren zum herstellen von kaltgepressten eisenhältigen briketts
DE69521530D1 (de) Verbessertes verfahren zum herstellen von verbundwerkstoffen
DE69714373T2 (de) Verfahren zum Herstellen von Monomeren
DE59813943D1 (de) Verfahren zum Herstellen von elektronischen Elementen
DE59601949D1 (de) Verfahren zum herstellen von wellpappe
DE69312283D1 (de) Verfahren zum herstellen von wellrohren
ATA66195A (de) Verfahren zum herstellen von gehäusen
ATA58789A (de) Verfahren zum herstellen von schuhwerk
DE69505352T2 (de) Verfahren zum herstellen von optischen isolatoren
DE69504476D1 (de) Verfahren zum herstellen von polyflouroxetanen
ATE237441T1 (de) Verfahren zum herstellen von holzwerkstoffplatten
DE69423681D1 (de) Verfahren zum Härten von metallischen Gegenstanden
ATE217575T1 (de) Verfahren zum herstellen von beuteln
ATA10894A (de) Verfahren zum herstellen von metall-matrix-verbundwerkstoffen
DE59404489D1 (de) Verfahren zum abbau von polygalaktomannanen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PPG INDUSTRIES OHIO, INC., CLEVELAND, OHIO, US

8339 Ceased/non-payment of the annual fee