DE69400562T2 - Herstellungsverfahren für Mikrospitzenkaltkathoden - Google Patents

Herstellungsverfahren für Mikrospitzenkaltkathoden

Info

Publication number
DE69400562T2
DE69400562T2 DE69400562T DE69400562T DE69400562T2 DE 69400562 T2 DE69400562 T2 DE 69400562T2 DE 69400562 T DE69400562 T DE 69400562T DE 69400562 T DE69400562 T DE 69400562T DE 69400562 T2 DE69400562 T2 DE 69400562T2
Authority
DE
Germany
Prior art keywords
microtip
manufacturing process
cold cathodes
cathodes
cold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69400562T
Other languages
English (en)
Other versions
DE69400562D1 (de
Inventor
Pierre Vaudaine
Brigitte Montmayeul
Michel Borel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69400562D1 publication Critical patent/DE69400562D1/de
Application granted granted Critical
Publication of DE69400562T2 publication Critical patent/DE69400562T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/319Circuit elements associated with the emitters by direct integration
DE69400562T 1993-07-12 1994-07-08 Herstellungsverfahren für Mikrospitzenkaltkathoden Expired - Lifetime DE69400562T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9308556A FR2707795B1 (fr) 1993-07-12 1993-07-12 Perfectionnement à un procédé de fabrication d'une source d'électrons à micropointes.

Publications (2)

Publication Number Publication Date
DE69400562D1 DE69400562D1 (de) 1996-10-24
DE69400562T2 true DE69400562T2 (de) 1997-03-27

Family

ID=9449175

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400562T Expired - Lifetime DE69400562T2 (de) 1993-07-12 1994-07-08 Herstellungsverfahren für Mikrospitzenkaltkathoden

Country Status (5)

Country Link
US (1) US5482486A (de)
EP (1) EP0634769B1 (de)
JP (1) JPH0729485A (de)
DE (1) DE69400562T2 (de)
FR (1) FR2707795B1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5731228A (en) 1994-03-11 1998-03-24 Fujitsu Limited Method for making micro electron beam source
US5542866A (en) * 1994-12-27 1996-08-06 Industrial Technology Research Institute Field emission display provided with repair capability of defects
US5589728A (en) * 1995-05-30 1996-12-31 Texas Instruments Incorporated Field emission device with lattice vacancy post-supported gate
US5686782A (en) * 1995-05-30 1997-11-11 Texas Instruments Incorporated Field emission device with suspended gate
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
FR2736465B1 (fr) * 1995-07-03 1997-08-08 Commissariat Energie Atomique Dispositif d'amorcage et/ou de maintien d'une decharge et jauge a vide a cathode froide comportant un tel dispositif
FR2737927B1 (fr) * 1995-08-17 1997-09-12 Commissariat Energie Atomique Procede et dispositif de formation de trous dans une couche de materiau photosensible, en particulier pour la fabrication de sources d'electrons
US5746634A (en) * 1996-04-03 1998-05-05 The Regents Of The University Of California Process system and method for fabricating submicron field emission cathodes
US6611093B1 (en) * 2000-09-19 2003-08-26 Display Research Laboratories, Inc. Field emission display with transparent cathode
US6620012B1 (en) * 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6545422B1 (en) * 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6822626B2 (en) * 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6612889B1 (en) 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
US9159527B2 (en) * 2003-10-16 2015-10-13 Carl Zeiss Microscopy, Llc Systems and methods for a gas field ionization source
FR2873852B1 (fr) * 2004-07-28 2011-06-24 Commissariat Energie Atomique Structure de cathode a haute resolution
JP6953917B2 (ja) 2017-09-01 2021-10-27 王子ホールディングス株式会社 反射防止構造体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3817592A (en) * 1972-09-29 1974-06-18 Linfield Res Inst Method for reproducibly fabricating and using stable thermal-field emission cathodes
US4324999A (en) * 1980-04-30 1982-04-13 Burroughs Corporation Electron-beam cathode having a uniform emission pattern
FR2593953B1 (fr) * 1986-01-24 1988-04-29 Commissariat Energie Atomique Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
FR2687839B1 (fr) * 1992-02-26 1994-04-08 Commissariat A Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ utilisant cette source.

Also Published As

Publication number Publication date
EP0634769B1 (de) 1996-09-18
DE69400562D1 (de) 1996-10-24
FR2707795A1 (fr) 1995-01-20
JPH0729485A (ja) 1995-01-31
EP0634769A1 (de) 1995-01-18
FR2707795B1 (fr) 1995-08-11
US5482486A (en) 1996-01-09

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Legal Events

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8364 No opposition during term of opposition