DE69333250D1 - Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe - Google Patents
Lichtemittierende Vorrichtung aus einer Verbindung der GalliumnitridgruppeInfo
- Publication number
- DE69333250D1 DE69333250D1 DE69333250T DE69333250T DE69333250D1 DE 69333250 D1 DE69333250 D1 DE 69333250D1 DE 69333250 T DE69333250 T DE 69333250T DE 69333250 T DE69333250 T DE 69333250T DE 69333250 D1 DE69333250 D1 DE 69333250D1
- Authority
- DE
- Germany
- Prior art keywords
- compound
- light emitting
- emitting device
- gallium nitride
- device made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21859592A JP2658009B2 (ja) | 1991-07-23 | 1992-07-23 | 窒化ガリウム系化合物半導体発光素子 |
| JP21859592 | 1992-07-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69333250D1 true DE69333250D1 (de) | 2003-11-20 |
| DE69333250T2 DE69333250T2 (de) | 2004-09-16 |
Family
ID=16722426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69333250T Expired - Fee Related DE69333250T2 (de) | 1992-07-23 | 1993-01-21 | Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US5408120A (de) |
| EP (2) | EP0579897B1 (de) |
| DE (1) | DE69333250T2 (de) |
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| EP0460710B1 (de) * | 1987-01-31 | 1994-12-07 | Toyoda Gosei Co., Ltd. | Galliumnitridartige Halbleiterverbindung und daraus bestehende lichtemittierende Vorrichtung sowie Verfahren zu deren Herstellung |
| US4946548A (en) * | 1988-04-29 | 1990-08-07 | Toyoda Gosei Co., Ltd. | Dry etching method for semiconductor |
| JP2829319B2 (ja) * | 1988-09-16 | 1998-11-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JPH0281484A (ja) * | 1988-09-16 | 1990-03-22 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体発光素子 |
| JP3140751B2 (ja) * | 1988-09-16 | 2001-03-05 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| JP2809690B2 (ja) * | 1989-01-13 | 1998-10-15 | 株式会社東芝 | 化合物半導体材料とこれを用いた半導体素子およびその製造方法 |
| JP2704181B2 (ja) * | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | 化合物半導体単結晶薄膜の成長方法 |
| JP2809692B2 (ja) * | 1989-04-28 | 1998-10-15 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
| JPH03183173A (ja) * | 1989-12-13 | 1991-08-09 | Canon Inc | 光学素子 |
| DE69126152T2 (de) * | 1990-02-28 | 1997-11-13 | Toyoda Gosei Kk | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung |
| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
| JP3078821B2 (ja) * | 1990-05-30 | 2000-08-21 | 豊田合成株式会社 | 半導体のドライエッチング方法 |
| JP2564024B2 (ja) * | 1990-07-09 | 1996-12-18 | シャープ株式会社 | 化合物半導体発光素子 |
| US5281830A (en) * | 1990-10-27 | 1994-01-25 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| GB2250862B (en) * | 1990-11-26 | 1994-10-19 | Sharp Kk | Electroluminescent device of compound semiconductor |
| US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
-
1993
- 1993-01-21 EP EP93100870A patent/EP0579897B1/de not_active Expired - Lifetime
- 1993-01-21 EP EP03001190A patent/EP1313153A3/de not_active Withdrawn
- 1993-01-21 DE DE69333250T patent/DE69333250T2/de not_active Expired - Fee Related
- 1993-01-22 US US08/006,301 patent/US5408120A/en not_active Ceased
-
1997
- 1997-04-18 US US08/844,386 patent/USRE36747E/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0579897A1 (de) | 1994-01-26 |
| USRE36747E (en) | 2000-06-27 |
| EP0579897B1 (de) | 2003-10-15 |
| EP1313153A3 (de) | 2005-05-04 |
| DE69333250T2 (de) | 2004-09-16 |
| US5408120A (en) | 1995-04-18 |
| EP1313153A2 (de) | 2003-05-21 |
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| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |