EP1251556B1
(de)
*
|
1992-01-30 |
2010-03-24 |
Canon Kabushiki Kaisha |
Herstellungsverfahren für Halbleitersubstrat
|
JP3416163B2
(ja)
*
|
1992-01-31 |
2003-06-16 |
キヤノン株式会社 |
半導体基板及びその作製方法
|
US6110833A
(en)
*
|
1998-03-03 |
2000-08-29 |
Advanced Micro Devices, Inc. |
Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
|
JPH07211916A
(ja)
*
|
1994-01-19 |
1995-08-11 |
Sony Corp |
トランジスタ素子及びその作製方法
|
GB9401770D0
(en)
*
|
1994-01-31 |
1994-03-23 |
Philips Electronics Uk Ltd |
Manufacture of electronic devices comprising thin-film circuits
|
US6004406A
(en)
*
|
1994-06-16 |
1999-12-21 |
Nec Corporation |
Silicon on insulating substrate
|
JPH08264400A
(ja)
*
|
1995-03-28 |
1996-10-11 |
Mitsubishi Electric Corp |
シリコン単結晶ウェハおよびその表面の熱酸化方法
|
DE69628505T2
(de)
*
|
1995-07-21 |
2004-05-06 |
Canon K.K. |
Halbleitendes Substrat und dessen Herstellungsverfahren
|
WO1997015946A1
(en)
*
|
1995-10-26 |
1997-05-01 |
Philips Electronics N.V. |
Method of manufacturing a semiconductor device
|
JPH09331049A
(ja)
*
|
1996-04-08 |
1997-12-22 |
Canon Inc |
貼り合わせsoi基板の作製方法及びsoi基板
|
FR2748851B1
(fr)
|
1996-05-15 |
1998-08-07 |
Commissariat Energie Atomique |
Procede de realisation d'une couche mince de materiau semiconducteur
|
US6013583A
(en)
*
|
1996-06-25 |
2000-01-11 |
International Business Machines Corporation |
Low temperature BPSG deposition process
|
KR100230984B1
(ko)
*
|
1996-07-24 |
1999-11-15 |
김광호 |
반도체장치의 비피에스지에 포함된 불순물 측정시 이용되는 계측설비 설정값 보정용 기준 샘플 제조 방법
|
US7470142B2
(en)
*
|
2004-06-21 |
2008-12-30 |
Sang-Yun Lee |
Wafer bonding method
|
SG55413A1
(en)
*
|
1996-11-15 |
1998-12-21 |
Method Of Manufacturing Semico |
Method of manufacturing semiconductor article
|
US6054363A
(en)
*
|
1996-11-15 |
2000-04-25 |
Canon Kabushiki Kaisha |
Method of manufacturing semiconductor article
|
FR2758003B1
(fr)
*
|
1996-12-27 |
1999-06-18 |
France Telecom |
Traitement anti-reflet de surfaces reflectives
|
CA2231625C
(en)
*
|
1997-03-17 |
2002-04-02 |
Canon Kabushiki Kaisha |
Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
|
JP3985065B2
(ja)
|
1997-05-14 |
2007-10-03 |
忠弘 大見 |
多孔質シリコン基板の形成方法及び多孔質シリコン基板の形成装置
|
JP4473349B2
(ja)
*
|
1997-06-30 |
2010-06-02 |
マクス−プランク−ゲゼルシャフト ツル フォルデルング デル ヴァイセンシャフト エー ファウ |
層状構造体製造方法、及び半導体基板
|
EP0895282A3
(de)
|
1997-07-30 |
2000-01-26 |
Canon Kabushiki Kaisha |
Verfahren zur Herstellung eines SOI-Substrates mittels eines Bond-Verfahrens und dadurch hergestelltes SOI-Substrat
|
US6686623B2
(en)
|
1997-11-18 |
2004-02-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Nonvolatile memory and electronic apparatus
|
FR2773261B1
(fr)
|
1997-12-30 |
2000-01-28 |
Commissariat Energie Atomique |
Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
|
JPH11195775A
(ja)
|
1997-12-26 |
1999-07-21 |
Sony Corp |
半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置
|
JP3501642B2
(ja)
|
1997-12-26 |
2004-03-02 |
キヤノン株式会社 |
基板処理方法
|
US5939750A
(en)
*
|
1998-01-21 |
1999-08-17 |
Advanced Micro Devices |
Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers
|
SG71903A1
(en)
*
|
1998-01-30 |
2000-04-18 |
Canon Kk |
Process of reclamation of soi substrate and reproduced substrate
|
JP4236722B2
(ja)
*
|
1998-02-05 |
2009-03-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6043120A
(en)
*
|
1998-03-03 |
2000-03-28 |
Advanced Micro Devices, Inc. |
Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
|
US6030868A
(en)
*
|
1998-03-03 |
2000-02-29 |
Advanced Micro Devices, Inc. |
Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation
|
JPH11251207A
(ja)
*
|
1998-03-03 |
1999-09-17 |
Canon Inc |
Soi基板及びその製造方法並びにその製造設備
|
US6232232B1
(en)
|
1998-04-07 |
2001-05-15 |
Micron Technology, Inc. |
High selectivity BPSG to TEOS etchant
|
US6051451A
(en)
*
|
1998-04-21 |
2000-04-18 |
Advanced Micro Devices, Inc. |
Heavy ion implant process to eliminate polystringers in high density type flash memory devices
|
AU4593499A
(en)
*
|
1998-07-03 |
2000-01-24 |
Interuniversitair Micro-Elektronica Centrum |
A thin-film opto-electronic device and a method of making it
|
CN1495915A
(zh)
*
|
1998-07-03 |
2004-05-12 |
������������ʽ���� |
光电转换元件
|
TW444266B
(en)
*
|
1998-07-23 |
2001-07-01 |
Canon Kk |
Semiconductor substrate and method of producing same
|
JP2000277478A
(ja)
*
|
1999-03-25 |
2000-10-06 |
Canon Inc |
陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
|
JP2000307112A
(ja)
*
|
1999-04-26 |
2000-11-02 |
Mitsubishi Electric Corp |
半導体装置及びその製造方法
|
JP3900741B2
(ja)
*
|
1999-05-21 |
2007-04-04 |
信越半導体株式会社 |
Soiウェーハの製造方法
|
JP2000353797A
(ja)
*
|
1999-06-11 |
2000-12-19 |
Mitsubishi Electric Corp |
半導体ウエハおよびその製造方法
|
JP3245136B2
(ja)
*
|
1999-09-01 |
2002-01-07 |
キヤノン販売株式会社 |
絶縁膜の膜質改善方法
|
US6693033B2
(en)
|
2000-02-10 |
2004-02-17 |
Motorola, Inc. |
Method of removing an amorphous oxide from a monocrystalline surface
|
US6501973B1
(en)
|
2000-06-30 |
2002-12-31 |
Motorola, Inc. |
Apparatus and method for measuring selected physical condition of an animate subject
|
FR2811807B1
(fr)
*
|
2000-07-12 |
2003-07-04 |
Commissariat Energie Atomique |
Procede de decoupage d'un bloc de materiau et de formation d'un film mince
|
US6555946B1
(en)
|
2000-07-24 |
2003-04-29 |
Motorola, Inc. |
Acoustic wave device and process for forming the same
|
US6590236B1
(en)
|
2000-07-24 |
2003-07-08 |
Motorola, Inc. |
Semiconductor structure for use with high-frequency signals
|
US6573126B2
(en)
*
|
2000-08-16 |
2003-06-03 |
Massachusetts Institute Of Technology |
Process for producing semiconductor article using graded epitaxial growth
|
US6493497B1
(en)
|
2000-09-26 |
2002-12-10 |
Motorola, Inc. |
Electro-optic structure and process for fabricating same
|
US6638838B1
(en)
|
2000-10-02 |
2003-10-28 |
Motorola, Inc. |
Semiconductor structure including a partially annealed layer and method of forming the same
|
US6383924B1
(en)
*
|
2000-12-13 |
2002-05-07 |
Micron Technology, Inc. |
Method of forming buried conductor patterns by surface transformation of empty spaces in solid state materials
|
US6673646B2
(en)
|
2001-02-28 |
2004-01-06 |
Motorola, Inc. |
Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
|
WO2002082514A1
(en)
*
|
2001-04-04 |
2002-10-17 |
Massachusetts Institute Of Technology |
A method for semiconductor device fabrication
|
FR2823599B1
(fr)
|
2001-04-13 |
2004-12-17 |
Commissariat Energie Atomique |
Substrat demomtable a tenue mecanique controlee et procede de realisation
|
FR2823596B1
(fr)
*
|
2001-04-13 |
2004-08-20 |
Commissariat Energie Atomique |
Substrat ou structure demontable et procede de realisation
|
US6709989B2
(en)
|
2001-06-21 |
2004-03-23 |
Motorola, Inc. |
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
|
US6646293B2
(en)
|
2001-07-18 |
2003-11-11 |
Motorola, Inc. |
Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
|
US6693298B2
(en)
|
2001-07-20 |
2004-02-17 |
Motorola, Inc. |
Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
|
US6594414B2
(en)
|
2001-07-25 |
2003-07-15 |
Motorola, Inc. |
Structure and method of fabrication for an optical switch
|
US6585424B2
(en)
|
2001-07-25 |
2003-07-01 |
Motorola, Inc. |
Structure and method for fabricating an electro-rheological lens
|
US6667196B2
(en)
|
2001-07-25 |
2003-12-23 |
Motorola, Inc. |
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
|
US6589856B2
(en)
|
2001-08-06 |
2003-07-08 |
Motorola, Inc. |
Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
|
US6639249B2
(en)
|
2001-08-06 |
2003-10-28 |
Motorola, Inc. |
Structure and method for fabrication for a solid-state lighting device
|
US6673667B2
(en)
|
2001-08-15 |
2004-01-06 |
Motorola, Inc. |
Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
|
US6593213B2
(en)
*
|
2001-09-20 |
2003-07-15 |
Heliovolt Corporation |
Synthesis of layers, coatings or films using electrostatic fields
|
US6787012B2
(en)
*
|
2001-09-20 |
2004-09-07 |
Helio Volt Corp |
Apparatus for the synthesis of layers, coatings or films
|
US6881647B2
(en)
*
|
2001-09-20 |
2005-04-19 |
Heliovolt Corporation |
Synthesis of layers, coatings or films using templates
|
US6559372B2
(en)
*
|
2001-09-20 |
2003-05-06 |
Heliovolt Corporation |
Photovoltaic devices and compositions for use therein
|
US6500733B1
(en)
|
2001-09-20 |
2002-12-31 |
Heliovolt Corporation |
Synthesis of layers, coatings or films using precursor layer exerted pressure containment
|
US6736986B2
(en)
|
2001-09-20 |
2004-05-18 |
Heliovolt Corporation |
Chemical synthesis of layers, coatings or films using surfactants
|
KR20030032133A
(ko)
*
|
2001-10-10 |
2003-04-26 |
유종훈 |
비정질실리콘 박막층이 증착된 다공질실리콘 반도체의제조방법
|
FR2830983B1
(fr)
*
|
2001-10-11 |
2004-05-14 |
Commissariat Energie Atomique |
Procede de fabrication de couches minces contenant des microcomposants
|
US20030134486A1
(en)
*
|
2002-01-16 |
2003-07-17 |
Zhongze Wang |
Semiconductor-on-insulator comprising integrated circuitry
|
KR100476901B1
(ko)
*
|
2002-05-22 |
2005-03-17 |
삼성전자주식회사 |
소이 반도체기판의 형성방법
|
US20030227057A1
(en)
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US6995430B2
(en)
*
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
US7074623B2
(en)
*
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
TWI272641B
(en)
*
|
2002-07-16 |
2007-02-01 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
US7176108B2
(en)
*
|
2002-11-07 |
2007-02-13 |
Soitec Silicon On Insulator |
Method of detaching a thin film at moderate temperature after co-implantation
|
FR2847075B1
(fr)
*
|
2002-11-07 |
2005-02-18 |
Commissariat Energie Atomique |
Procede de formation d'une zone fragile dans un substrat par co-implantation
|
FR2848336B1
(fr)
*
|
2002-12-09 |
2005-10-28 |
Commissariat Energie Atomique |
Procede de realisation d'une structure contrainte destinee a etre dissociee
|
US7501329B2
(en)
|
2003-05-21 |
2009-03-10 |
Micron Technology, Inc. |
Wafer gettering using relaxed silicon germanium epitaxial proximity layers
|
US7273788B2
(en)
|
2003-05-21 |
2007-09-25 |
Micron Technology, Inc. |
Ultra-thin semiconductors bonded on glass substrates
|
US7008854B2
(en)
|
2003-05-21 |
2006-03-07 |
Micron Technology, Inc. |
Silicon oxycarbide substrates for bonded silicon on insulator
|
US7662701B2
(en)
*
|
2003-05-21 |
2010-02-16 |
Micron Technology, Inc. |
Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
|
US6875656B2
(en)
*
|
2003-05-22 |
2005-04-05 |
Texas Instruments Incorporated |
Method for improving silicon-on-insulator (SOI) film uniformity on a semiconductor wafer
|
FR2856844B1
(fr)
*
|
2003-06-24 |
2006-02-17 |
Commissariat Energie Atomique |
Circuit integre sur puce de hautes performances
|
US7439158B2
(en)
|
2003-07-21 |
2008-10-21 |
Micron Technology, Inc. |
Strained semiconductor by full wafer bonding
|
FR2857953B1
(fr)
|
2003-07-21 |
2006-01-13 |
Commissariat Energie Atomique |
Structure empilee, et procede pour la fabriquer
|
US7153753B2
(en)
|
2003-08-05 |
2006-12-26 |
Micron Technology, Inc. |
Strained Si/SiGe/SOI islands and processes of making same
|
US7091108B2
(en)
*
|
2003-09-11 |
2006-08-15 |
Intel Corporation |
Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices
|
US20050082526A1
(en)
*
|
2003-10-15 |
2005-04-21 |
International Business Machines Corporation |
Techniques for layer transfer processing
|
FR2861497B1
(fr)
*
|
2003-10-28 |
2006-02-10 |
Soitec Silicon On Insulator |
Procede de transfert catastrophique d'une couche fine apres co-implantation
|
US7772087B2
(en)
*
|
2003-12-19 |
2010-08-10 |
Commissariat A L'energie Atomique |
Method of catastrophic transfer of a thin film after co-implantation
|
KR100609367B1
(ko)
*
|
2004-12-14 |
2006-08-08 |
한국전자통신연구원 |
Soi 기판의 제조방법
|
WO2006082469A1
(en)
*
|
2005-02-03 |
2006-08-10 |
S.O.I.Tec Silicon On Insulator Technologies |
Method for applying a high temperature treatment to a semimiconductor wafer
|
US7244659B2
(en)
*
|
2005-03-10 |
2007-07-17 |
Micron Technology, Inc. |
Integrated circuits and methods of forming a field effect transistor
|
FR2886051B1
(fr)
|
2005-05-20 |
2007-08-10 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince
|
FR2889887B1
(fr)
*
|
2005-08-16 |
2007-11-09 |
Commissariat Energie Atomique |
Procede de report d'une couche mince sur un support
|
DE102005042317B3
(de)
*
|
2005-09-06 |
2007-04-12 |
Infineon Technologies Ag |
Verfahren zum Herstellen einer Schichtanordnung und Schichtanordnung
|
FR2891281B1
(fr)
|
2005-09-28 |
2007-12-28 |
Commissariat Energie Atomique |
Procede de fabrication d'un element en couches minces.
|
US7767904B2
(en)
*
|
2006-01-12 |
2010-08-03 |
Heliovolt Corporation |
Compositions including controlled segregated phase domain structures
|
US20070160763A1
(en)
*
|
2006-01-12 |
2007-07-12 |
Stanbery Billy J |
Methods of making controlled segregated phase domain structures
|
US8084685B2
(en)
*
|
2006-01-12 |
2011-12-27 |
Heliovolt Corporation |
Apparatus for making controlled segregated phase domain structures
|
FR2899378B1
(fr)
*
|
2006-03-29 |
2008-06-27 |
Commissariat Energie Atomique |
Procede de detachement d'un film mince par fusion de precipites
|
US7557002B2
(en)
*
|
2006-08-18 |
2009-07-07 |
Micron Technology, Inc. |
Methods of forming transistor devices
|
FR2910179B1
(fr)
*
|
2006-12-19 |
2009-03-13 |
Commissariat Energie Atomique |
PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
|
US7989322B2
(en)
*
|
2007-02-07 |
2011-08-02 |
Micron Technology, Inc. |
Methods of forming transistors
|
US20080277778A1
(en)
*
|
2007-05-10 |
2008-11-13 |
Furman Bruce K |
Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
|
US8034317B2
(en)
*
|
2007-06-18 |
2011-10-11 |
Heliovolt Corporation |
Assemblies of anisotropic nanoparticles
|
FR2922359B1
(fr)
*
|
2007-10-12 |
2009-12-18 |
Commissariat Energie Atomique |
Procede de fabrication d'une structure micro-electronique impliquant un collage moleculaire
|
FR2925221B1
(fr)
*
|
2007-12-17 |
2010-02-19 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince
|
KR100980738B1
(ko)
*
|
2008-10-10 |
2010-09-08 |
한국전자통신연구원 |
반도체 나노와이어 센서 소자의 제조 방법 및 이에 따라 제조된 반도체 나노와이어 센서 소자
|
AU2010211053A1
(en)
*
|
2009-02-04 |
2010-08-12 |
Heliovolt Corporation |
Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
|
KR20130122693A
(ko)
*
|
2009-06-05 |
2013-11-07 |
헬리오볼트 코오퍼레이션 |
비-접촉 압력 용기를 통해 박막 혹은 복합층을 합성하는 프로세스
|
FR2947098A1
(fr)
*
|
2009-06-18 |
2010-12-24 |
Commissariat Energie Atomique |
Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
|
US8256621B2
(en)
*
|
2009-09-11 |
2012-09-04 |
Pro-Pak Industries, Inc. |
Load tray and method for unitizing a palletized load
|
US20110180896A1
(en)
*
|
2010-01-25 |
2011-07-28 |
International Business Machines Corporation |
Method of producing bonded wafer structure with buried oxide/nitride layers
|
US8021641B2
(en)
*
|
2010-02-04 |
2011-09-20 |
Alliance For Sustainable Energy, Llc |
Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
|
WO2011146115A1
(en)
|
2010-05-21 |
2011-11-24 |
Heliovolt Corporation |
Liquid precursor for deposition of copper selenide and method of preparing the same
|
US9142408B2
(en)
|
2010-08-16 |
2015-09-22 |
Alliance For Sustainable Energy, Llc |
Liquid precursor for deposition of indium selenide and method of preparing the same
|
US9105797B2
(en)
|
2012-05-31 |
2015-08-11 |
Alliance For Sustainable Energy, Llc |
Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
|
US10833175B2
(en)
*
|
2015-06-04 |
2020-11-10 |
International Business Machines Corporation |
Formation of dislocation-free SiGe finFET using porous silicon
|
US11114333B2
(en)
*
|
2018-02-22 |
2021-09-07 |
Micromaterials, LLC |
Method for depositing and reflow of a high quality etch resistant gapfill dielectric film
|
CN113571410B
(zh)
*
|
2021-07-19 |
2024-02-02 |
太原理工大学 |
一种低界面热阻金刚石基氮化镓晶片材料的制备方法
|
CN116525415B
(zh)
*
|
2023-06-09 |
2024-01-30 |
中电科先进材料技术创新有限公司 |
硅外延片的制备方法及硅外延片
|