DE69324578T2 - Phasenstruktur um die optische aufloesung fuer ein beleuchtungssystem durch projektion zu erhoehen - Google Patents

Phasenstruktur um die optische aufloesung fuer ein beleuchtungssystem durch projektion zu erhoehen

Info

Publication number
DE69324578T2
DE69324578T2 DE69324578T DE69324578T DE69324578T2 DE 69324578 T2 DE69324578 T2 DE 69324578T2 DE 69324578 T DE69324578 T DE 69324578T DE 69324578 T DE69324578 T DE 69324578T DE 69324578 T2 DE69324578 T2 DE 69324578T2
Authority
DE
Germany
Prior art keywords
projection
increase
lighting system
phase structure
optical resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324578T
Other languages
English (en)
Other versions
DE69324578D1 (de
Inventor
Den Hove Luc Van
Rainer Pforr
Kurt Ronse
Rik Jonckheere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of DE69324578D1 publication Critical patent/DE69324578D1/de
Application granted granted Critical
Publication of DE69324578T2 publication Critical patent/DE69324578T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
DE69324578T 1993-02-23 1993-02-23 Phasenstruktur um die optische aufloesung fuer ein beleuchtungssystem durch projektion zu erhoehen Expired - Fee Related DE69324578T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/BE1993/000009 WO1994019723A1 (en) 1993-02-23 1993-02-23 Resolution-enhancing optical phase structure for a projection illumination system

Publications (2)

Publication Number Publication Date
DE69324578D1 DE69324578D1 (de) 1999-05-27
DE69324578T2 true DE69324578T2 (de) 1999-10-14

Family

ID=3886770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324578T Expired - Fee Related DE69324578T2 (de) 1993-02-23 1993-02-23 Phasenstruktur um die optische aufloesung fuer ein beleuchtungssystem durch projektion zu erhoehen

Country Status (6)

Country Link
US (1) US5624773A (de)
EP (1) EP0637393B1 (de)
JP (1) JPH07506224A (de)
KR (1) KR950701091A (de)
DE (1) DE69324578T2 (de)
WO (1) WO1994019723A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989752A (en) * 1996-05-29 1999-11-23 Chiu; Tzu-Yin Reconfigurable mask
US5786116A (en) * 1997-02-14 1998-07-28 Micron Technology, Inc. Atom lithographic mask having diffraction grating aligned with primary mask pattern
US5851701A (en) * 1997-04-01 1998-12-22 Micron Technology, Inc. Atom lithographic mask having diffraction grating and attenuated phase shifters
US6139994A (en) * 1999-06-25 2000-10-31 Broeke; Doug Van Den Use of intersecting subresolution features for microlithography
EP1251397A3 (de) * 2001-03-27 2005-07-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellung von optisch abgebildeten Strukturen mit einer Phasenschiebung von transmittierten Lichtanteilen
US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
KR100562195B1 (ko) * 2002-03-08 2006-03-20 에이에스엠엘 네델란즈 비.브이. 리소그래피용 마스크, 마스크 제조방법, 리소그래피장치및 디바이스제조방법
US7241539B2 (en) * 2002-10-07 2007-07-10 Samsung Electronics Co., Ltd. Photomasks including shadowing elements therein and related methods and systems
KR100486270B1 (ko) * 2002-10-07 2005-04-29 삼성전자주식회사 웨이퍼 상의 임계 선폭을 제어할 수 있는 포토 마스크제조 방법, 이에 의한 포토 마스크 및 이를 이용한 노광방법
EP1494100A1 (de) * 2003-06-30 2005-01-05 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur parametrierbaren Steuerung
DE10330421A1 (de) * 2003-07-04 2005-02-03 Leonhard Kurz Gmbh & Co. Kg Belichtungsstation für Folienbahnen
DE10355599B4 (de) * 2003-11-28 2009-05-14 Qimonda Ag Verfahren zur Durchführung einer lithographischen Belichtung mithilfe polarisierter elektromagnetischer Strahlung in einer lithographischen Belichtungseinrichtung
KR100604941B1 (ko) * 2005-06-15 2006-07-28 삼성전자주식회사 변형 조명을 구현하는 포토마스크, 제조방법 및 이를이용한 패턴 형성방법
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
US20070287075A1 (en) * 2006-06-13 2007-12-13 Rainer Pforr Mask arrangement, optical projection system and method for obtaining grating parameters and absorption properties of a diffractive optical element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2641589B2 (ja) * 1990-03-09 1997-08-13 三菱電機株式会社 フォトマスク
KR950000091B1 (ko) * 1990-06-20 1995-01-09 후지쓰 가부시끼가이샤 위상 천이기가 있는 레티클과 그 제조방법 및 수정방법
EP0967524A3 (de) * 1990-11-15 2000-01-05 Nikon Corporation Verfahren und Vorrichtung zur Projektionsbelichtung
JP3009492B2 (ja) * 1991-02-28 2000-02-14 川崎製鉄株式会社 位相シフトマスクとその製造方法
DE69215942T2 (de) * 1991-04-05 1997-07-24 Nippon Telegraph & Telephone Verfahren und System zur optischen Projetkionsbelichtung
EP0524741A1 (de) * 1991-07-12 1993-01-27 Motorola, Inc. Verfahren zur Erhöhung der Bildauflösung einer Maske für die Herstellung von Halbleiterschaltungen
KR970003593B1 (en) * 1992-09-03 1997-03-20 Samsung Electronics Co Ltd Projection exposure method and device using mask

Also Published As

Publication number Publication date
EP0637393B1 (de) 1999-04-21
EP0637393A1 (de) 1995-02-08
US5624773A (en) 1997-04-29
KR950701091A (ko) 1995-02-20
DE69324578D1 (de) 1999-05-27
JPH07506224A (ja) 1995-07-06
WO1994019723A1 (en) 1994-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee