DE69319854D1 - Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung - Google Patents

Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Info

Publication number
DE69319854D1
DE69319854D1 DE69319854T DE69319854T DE69319854D1 DE 69319854 D1 DE69319854 D1 DE 69319854D1 DE 69319854 T DE69319854 T DE 69319854T DE 69319854 T DE69319854 T DE 69319854T DE 69319854 D1 DE69319854 D1 DE 69319854D1
Authority
DE
Germany
Prior art keywords
light
emitting device
device based
nitride semiconductor
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69319854T
Other languages
English (en)
Other versions
DE69319854T2 (de
Inventor
Shuji Nakamura
Takashi Mukai
Naruhito Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27571840&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69319854(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP7087493A external-priority patent/JP2560964B2/ja
Priority claimed from JP7087393A external-priority patent/JP2560963B2/ja
Priority claimed from JP11454493A external-priority patent/JP2713095B2/ja
Priority claimed from JP11454293A external-priority patent/JP2809045B2/ja
Priority claimed from JP11454393A external-priority patent/JP2713094B2/ja
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Application granted granted Critical
Publication of DE69319854D1 publication Critical patent/DE69319854D1/de
Publication of DE69319854T2 publication Critical patent/DE69319854T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025Physical imperfections, e.g. particular concentration or distribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
DE69319854T 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung Expired - Lifetime DE69319854T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP33555692 1992-11-20
JP1812293 1993-01-08
JP1812393 1993-01-08
JP7087493A JP2560964B2 (ja) 1993-03-05 1993-03-05 窒化ガリウム系化合物半導体発光素子
JP7087393A JP2560963B2 (ja) 1993-03-05 1993-03-05 窒化ガリウム系化合物半導体発光素子
JP11454493A JP2713095B2 (ja) 1993-01-08 1993-05-17 半導体発光素子およびその製造方法
JP11454293A JP2809045B2 (ja) 1992-11-20 1993-05-17 窒化物半導体発光素子
JP11454393A JP2713094B2 (ja) 1993-01-08 1993-05-17 半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE69319854D1 true DE69319854D1 (de) 1998-08-27
DE69319854T2 DE69319854T2 (de) 1999-03-11

Family

ID=27571840

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69319854T Expired - Lifetime DE69319854T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung
DE69333829T Expired - Lifetime DE69333829T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69333829T Expired - Lifetime DE69333829T2 (de) 1992-11-20 1993-11-19 Lichtemittierende Vorrichtung auf Basis einer Galliumnitrid-Halbleiterverbindung

Country Status (4)

Country Link
US (9) US5578839A (de)
EP (2) EP0599224B2 (de)
KR (5) KR970007135B1 (de)
DE (2) DE69319854T2 (de)

Families Citing this family (358)

* Cited by examiner, † Cited by third party
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US6469323B1 (en) 2002-10-22
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EP0844675A2 (de) 1998-05-27
EP0599224A1 (de) 1994-06-01
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US6078063A (en) 2000-06-20
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EP0599224B1 (de) 1998-07-22
US5880486A (en) 1999-03-09
DE69319854T2 (de) 1999-03-11
US6791103B2 (en) 2004-09-14
US5734182A (en) 1998-03-31
US5578839A (en) 1996-11-26
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US20030216011A1 (en) 2003-11-20
KR970007135B1 (ko) 1997-05-02
US20030006424A1 (en) 2003-01-09
US5747832A (en) 1998-05-05
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KR940012684A (ko) 1994-06-24
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