DE69313275D1 - Plasma-behandlungseinrichtung, wobei ein gleichförmiges elektrisches feld durch ein dielektrisches fenster induziert wird und dazugehöriges verfahren - Google Patents

Plasma-behandlungseinrichtung, wobei ein gleichförmiges elektrisches feld durch ein dielektrisches fenster induziert wird und dazugehöriges verfahren

Info

Publication number
DE69313275D1
DE69313275D1 DE69313275T DE69313275T DE69313275D1 DE 69313275 D1 DE69313275 D1 DE 69313275D1 DE 69313275 T DE69313275 T DE 69313275T DE 69313275 T DE69313275 T DE 69313275T DE 69313275 D1 DE69313275 D1 DE 69313275D1
Authority
DE
Germany
Prior art keywords
chamber
dielectric window
radiofrequency energy
induced
interior
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69313275T
Other languages
English (en)
Other versions
DE69313275T2 (de
Inventor
Ching-Hwa Chen
David Liu
Duc Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE69313275D1 publication Critical patent/DE69313275D1/de
Publication of DE69313275T2 publication Critical patent/DE69313275T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
DE69313275T 1992-05-14 1993-05-13 Plasma-behandlungseinrichtung, wobei ein gleichförmiges elektrisches feld durch ein dielektrisches fenster induziert wird und dazugehöriges verfahren Expired - Fee Related DE69313275T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/883,201 US5226967A (en) 1992-05-14 1992-05-14 Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
PCT/US1993/004496 WO1993023874A1 (en) 1992-05-14 1993-05-13 Plasma treatment apparatus and method in which a uniform electric field is induced by a dielectric window

Publications (2)

Publication Number Publication Date
DE69313275D1 true DE69313275D1 (de) 1997-09-25
DE69313275T2 DE69313275T2 (de) 1997-12-04

Family

ID=25382172

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313275T Expired - Fee Related DE69313275T2 (de) 1992-05-14 1993-05-13 Plasma-behandlungseinrichtung, wobei ein gleichförmiges elektrisches feld durch ein dielektrisches fenster induziert wird und dazugehöriges verfahren

Country Status (9)

Country Link
US (2) US5226967A (de)
EP (1) EP0640244B1 (de)
JP (1) JP3378248B2 (de)
KR (1) KR100278232B1 (de)
AT (1) ATE157197T1 (de)
DE (1) DE69313275T2 (de)
ES (1) ES2105263T3 (de)
TW (1) TW215968B (de)
WO (1) WO1993023874A1 (de)

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JP3378248B2 (ja) 2003-02-17
DE69313275T2 (de) 1997-12-04
TW215968B (en) 1993-11-11
JPH07508125A (ja) 1995-09-07
KR100278232B1 (ko) 2001-02-01
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