US5330606A
(en)
*
|
1990-12-14 |
1994-07-19 |
Matsushita Electric Industrial Co., Ltd. |
Plasma source for etching
|
US5565247A
(en)
*
|
1991-08-30 |
1996-10-15 |
Canon Kabushiki Kaisha |
Process for forming a functional deposited film
|
US5686050A
(en)
|
1992-10-09 |
1997-11-11 |
The University Of Tennessee Research Corporation |
Method and apparatus for the electrostatic charging of a web or film
|
US5410122A
(en)
*
|
1993-03-15 |
1995-04-25 |
Applied Materials, Inc. |
Use of electrostatic forces to reduce particle contamination in semiconductor plasma processing chambers
|
JP2809041B2
(ja)
*
|
1993-03-18 |
1998-10-08 |
株式会社日本自動車部品総合研究所 |
プラズマcvd装置およびプラズマcvd方法
|
US5938854A
(en)
*
|
1993-05-28 |
1999-08-17 |
The University Of Tennessee Research Corporation |
Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure
|
US5413670A
(en)
*
|
1993-07-08 |
1995-05-09 |
Air Products And Chemicals, Inc. |
Method for plasma etching or cleaning with diluted NF3
|
US5614055A
(en)
*
|
1993-08-27 |
1997-03-25 |
Applied Materials, Inc. |
High density plasma CVD and etching reactor
|
JPH0786242A
(ja)
*
|
1993-09-10 |
1995-03-31 |
Fujitsu Ltd |
半導体装置の製造方法
|
EP0680072B1
(de)
|
1994-04-28 |
2003-10-08 |
Applied Materials, Inc. |
Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
|
EP0697467A1
(de)
*
|
1994-07-21 |
1996-02-21 |
Applied Materials, Inc. |
Verfahren und Vorrichtung zur Reinigung einer Beschichtungskammer
|
US5955174A
(en)
|
1995-03-28 |
1999-09-21 |
The University Of Tennessee Research Corporation |
Composite of pleated and nonwoven webs
|
JP3585578B2
(ja)
*
|
1995-05-30 |
2004-11-04 |
アネルバ株式会社 |
プラズマ処理装置
|
WO1997013266A2
(en)
|
1995-06-19 |
1997-04-10 |
The University Of Tennessee Research Corporation |
Discharge methods and electrodes for generating plasmas at one atmosphere of pressure, and materials treated therewith
|
US6042686A
(en)
*
|
1995-06-30 |
2000-03-28 |
Lam Research Corporation |
Power segmented electrode
|
US6060397A
(en)
*
|
1995-07-14 |
2000-05-09 |
Applied Materials, Inc. |
Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
|
US6794301B2
(en)
|
1995-10-13 |
2004-09-21 |
Mattson Technology, Inc. |
Pulsed plasma processing of semiconductor substrates
|
US5983828A
(en)
*
|
1995-10-13 |
1999-11-16 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
US6253704B1
(en)
|
1995-10-13 |
2001-07-03 |
Mattson Technology, Inc. |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
|
US5817534A
(en)
*
|
1995-12-04 |
1998-10-06 |
Applied Materials, Inc. |
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
|
JPH09167755A
(ja)
*
|
1995-12-15 |
1997-06-24 |
Nec Corp |
プラズマ酸化膜処理装置
|
US6017825A
(en)
*
|
1996-03-29 |
2000-01-25 |
Lam Research Corporation |
Etch rate loading improvement
|
US5976261A
(en)
*
|
1996-07-11 |
1999-11-02 |
Cvc Products, Inc. |
Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
|
JPH1092810A
(ja)
*
|
1996-09-10 |
1998-04-10 |
Mitsubishi Electric Corp |
半導体装置
|
SG70035A1
(en)
*
|
1996-11-13 |
2000-01-25 |
Applied Materials Inc |
Systems and methods for high temperature processing of semiconductor wafers
|
JPH10158842A
(ja)
*
|
1996-12-03 |
1998-06-16 |
Toshiba Corp |
成膜装置
|
US6248624B1
(en)
*
|
1997-08-27 |
2001-06-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for forming a dram stacked capacitor of zig-zag configuration
|
DE69831602T2
(de)
*
|
1997-10-01 |
2006-05-04 |
Dow Global Technologies, Inc., Midland |
Zweiseitige Shower-Head-Magnetron, Plasmaerzeugungsapparat und Substratbeschichtungsmethode
|
US6024044A
(en)
*
|
1997-10-09 |
2000-02-15 |
Applied Komatsu Technology, Inc. |
Dual frequency excitation of plasma for film deposition
|
US6635578B1
(en)
|
1998-02-09 |
2003-10-21 |
Applied Materials, Inc |
Method of operating a dual chamber reactor with neutral density decoupled from ion density
|
US6352049B1
(en)
|
1998-02-09 |
2002-03-05 |
Applied Materials, Inc. |
Plasma assisted processing chamber with separate control of species density
|
US6050506A
(en)
*
|
1998-02-13 |
2000-04-18 |
Applied Materials, Inc. |
Pattern of apertures in a showerhead for chemical vapor deposition
|
JP4256587B2
(ja)
*
|
1998-04-13 |
2009-04-22 |
東京エレクトロン株式会社 |
低減インピーダンスチャンバ
|
US20020053694A1
(en)
|
1998-06-10 |
2002-05-09 |
Sutcliffe Victor C. |
Method of forming a memory cell with self-aligned contacts
|
US6395640B2
(en)
|
1999-12-17 |
2002-05-28 |
Texas Instruments Incorporated |
Apparatus and method for selectivity restricting process fluid flow in semiconductor processing
|
US6335293B1
(en)
|
1998-07-13 |
2002-01-01 |
Mattson Technology, Inc. |
Systems and methods for two-sided etch of a semiconductor substrate
|
US6281132B1
(en)
*
|
1998-10-06 |
2001-08-28 |
Advanced Micro Devices, Inc. |
Device and method for etching nitride spacers formed upon an integrated circuit gate conductor
|
TW455912B
(en)
*
|
1999-01-22 |
2001-09-21 |
Sony Corp |
Method and apparatus for film deposition
|
US6499425B1
(en)
|
1999-01-22 |
2002-12-31 |
Micron Technology, Inc. |
Quasi-remote plasma processing method and apparatus
|
US6242364B1
(en)
|
1999-03-23 |
2001-06-05 |
Silicon Valley Group, Inc. |
Plasma deposition of spin chucks to reduce contamination of silicon wafers
|
JP2000348897A
(ja)
*
|
1999-05-31 |
2000-12-15 |
Sumitomo Metal Ind Ltd |
プラズマ処理装置
|
US6565661B1
(en)
|
1999-06-04 |
2003-05-20 |
Simplus Systems Corporation |
High flow conductance and high thermal conductance showerhead system and method
|
CN100371491C
(zh)
|
1999-08-17 |
2008-02-27 |
东京电子株式会社 |
脉冲等离子体处理方法及其设备
|
KR20010056655A
(ko)
*
|
1999-12-16 |
2001-07-04 |
황 철 주 |
반도체 소자 제조 장치
|
US6537420B2
(en)
|
1999-12-17 |
2003-03-25 |
Texas Instruments Incorporated |
Method and apparatus for restricting process fluid flow within a showerhead assembly
|
US6363882B1
(en)
|
1999-12-30 |
2002-04-02 |
Lam Research Corporation |
Lower electrode design for higher uniformity
|
US20030079983A1
(en)
*
|
2000-02-25 |
2003-05-01 |
Maolin Long |
Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
|
US6476341B2
(en)
|
2000-03-13 |
2002-11-05 |
Advanced Plasma And Thin Films Technologies, Inc. |
Cleaning device with deeply reaching plasma and assisting electrodes
|
US20070048882A1
(en)
*
|
2000-03-17 |
2007-03-01 |
Applied Materials, Inc. |
Method to reduce plasma-induced charging damage
|
US7067034B2
(en)
|
2000-03-27 |
2006-06-27 |
Lam Research Corporation |
Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
|
US6502530B1
(en)
*
|
2000-04-26 |
2003-01-07 |
Unaxis Balzers Aktiengesellschaft |
Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
|
US6412437B1
(en)
*
|
2000-08-18 |
2002-07-02 |
Micron Technology, Inc. |
Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
|
TW511398B
(en)
*
|
2000-09-12 |
2002-11-21 |
Tokyo Electron Ltd |
Apparatus and method to control the uniformity of plasma by reducing radial loss
|
US6471830B1
(en)
|
2000-10-03 |
2002-10-29 |
Veeco/Cvc, Inc. |
Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
|
KR100765539B1
(ko)
*
|
2001-05-18 |
2007-10-10 |
엘지.필립스 엘시디 주식회사 |
화학기상 증착장비
|
US6677711B2
(en)
*
|
2001-06-07 |
2004-01-13 |
Lam Research Corporation |
Plasma processor method and apparatus
|
US6770166B1
(en)
*
|
2001-06-29 |
2004-08-03 |
Lam Research Corp. |
Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
|
US6984288B2
(en)
*
|
2001-08-08 |
2006-01-10 |
Lam Research Corporation |
Plasma processor in plasma confinement region within a vacuum chamber
|
JP3886424B2
(ja)
*
|
2001-08-28 |
2007-02-28 |
鹿児島日本電気株式会社 |
基板処理装置及び方法
|
US6828241B2
(en)
*
|
2002-01-07 |
2004-12-07 |
Applied Materials, Inc. |
Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
|
TW591714B
(en)
*
|
2002-02-20 |
2004-06-11 |
Radiiontech Co Ltd |
Cleaning apparatus using atmospheric pressure plasma
|
JP4109468B2
(ja)
*
|
2002-03-05 |
2008-07-02 |
住友ゴム工業株式会社 |
自動二輪車用ラジアルタイヤ
|
US7500445B2
(en)
*
|
2003-01-27 |
2009-03-10 |
Applied Materials, Inc. |
Method and apparatus for cleaning a CVD chamber
|
US20040157430A1
(en)
*
|
2003-02-07 |
2004-08-12 |
Asml Netherlands B.V. |
Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
|
JP4226597B2
(ja)
*
|
2003-03-04 |
2009-02-18 |
株式会社日立国際電気 |
基板処理装置およびデバイスの製造方法
|
KR20050004995A
(ko)
*
|
2003-07-01 |
2005-01-13 |
삼성전자주식회사 |
플라즈마를 이용하는 기판 가공 장치
|
KR100450643B1
(ko)
*
|
2003-09-26 |
2004-10-01 |
코닉시스템 주식회사 |
플라즈마 급속열처리 장치
|
US20060000552A1
(en)
*
|
2004-07-05 |
2006-01-05 |
Tokyo Electron Limited |
Plasma processing apparatus and cleaning method thereof
|
JP4550507B2
(ja)
*
|
2004-07-26 |
2010-09-22 |
株式会社日立ハイテクノロジーズ |
プラズマ処理装置
|
US8012306B2
(en)
*
|
2006-02-15 |
2011-09-06 |
Lam Research Corporation |
Plasma processing reactor with multiple capacitive and inductive power sources
|
US7432467B2
(en)
*
|
2006-03-28 |
2008-10-07 |
Tokyo Electron Limited |
Plasma processing apparatus
|
US20070227666A1
(en)
*
|
2006-03-30 |
2007-10-04 |
Tokyo Electron Limited |
Plasma processing apparatus
|
US7758718B1
(en)
*
|
2006-12-29 |
2010-07-20 |
Lam Research Corporation |
Reduced electric field arrangement for managing plasma confinement
|
US8137501B2
(en)
*
|
2007-02-08 |
2012-03-20 |
Lam Research Corporation |
Bevel clean device
|
CN101451237B
(zh)
*
|
2007-11-30 |
2012-02-08 |
中微半导体设备(上海)有限公司 |
具有多个等离子体反应区域的包括多个处理平台的等离子体反应室
|
US20090236214A1
(en)
|
2008-03-20 |
2009-09-24 |
Karthik Janakiraman |
Tunable ground planes in plasma chambers
|
JP5211332B2
(ja)
*
|
2008-07-01 |
2013-06-12 |
株式会社ユーテック |
プラズマcvd装置、dlc膜及び薄膜の製造方法
|
EP2293838B1
(de)
|
2008-07-01 |
2012-08-08 |
Endologix, Inc. |
Kathetersystem
|
US20100098875A1
(en)
*
|
2008-10-17 |
2010-04-22 |
Andreas Fischer |
Pre-coating and wafer-less auto-cleaning system and method
|
EP2253735B1
(de)
|
2009-05-13 |
2017-11-22 |
SiO2 Medical Products, Inc. |
Behälterverarbeitung
|
US9458536B2
(en)
|
2009-07-02 |
2016-10-04 |
Sio2 Medical Products, Inc. |
PECVD coating methods for capped syringes, cartridges and other articles
|
US11624115B2
(en)
|
2010-05-12 |
2023-04-11 |
Sio2 Medical Products, Inc. |
Syringe with PECVD lubrication
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US9878101B2
(en)
|
2010-11-12 |
2018-01-30 |
Sio2 Medical Products, Inc. |
Cyclic olefin polymer vessels and vessel coating methods
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
CN103561807B
(zh)
|
2011-03-01 |
2015-11-25 |
恩朵罗杰克斯股份有限公司 |
导管系统及其使用方法
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
US9272095B2
(en)
|
2011-04-01 |
2016-03-01 |
Sio2 Medical Products, Inc. |
Vessels, contact surfaces, and coating and inspection apparatus and methods
|
US20120298302A1
(en)
*
|
2011-05-23 |
2012-11-29 |
Yaomin Xia |
Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma
|
JP5922352B2
(ja)
*
|
2011-08-11 |
2016-05-24 |
Sppテクノロジーズ株式会社 |
窒化膜の製造装置及びその製造方法、並びにその製造プログラム
|
US10189603B2
(en)
|
2011-11-11 |
2019-01-29 |
Sio2 Medical Products, Inc. |
Passivation, pH protective or lubricity coating for pharmaceutical package, coating process and apparatus
|
US11116695B2
(en)
|
2011-11-11 |
2021-09-14 |
Sio2 Medical Products, Inc. |
Blood sample collection tube
|
EP2846755A1
(de)
|
2012-05-09 |
2015-03-18 |
SiO2 Medical Products, Inc. |
Saccharidschutzschicht für eine arzneimittelverpackung
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
*
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
JP6207880B2
(ja)
*
|
2012-09-26 |
2017-10-04 |
東芝メモリ株式会社 |
プラズマ処理装置およびプラズマ処理方法
|
JP6509734B2
(ja)
|
2012-11-01 |
2019-05-08 |
エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド |
皮膜検査方法
|
EP2920567B1
(de)
|
2012-11-16 |
2020-08-19 |
SiO2 Medical Products, Inc. |
Verfahren und vorrichtung zur erkennung von schnellen sperrbeschichtungsintegritätseigenschaften
|
CA2892294C
(en)
|
2012-11-30 |
2021-07-27 |
Sio2 Medical Products, Inc. |
Controlling the uniformity of pecvd deposition on medical syringes, cartridges, and the like
|
US9764093B2
(en)
|
2012-11-30 |
2017-09-19 |
Sio2 Medical Products, Inc. |
Controlling the uniformity of PECVD deposition
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
US20140178604A1
(en)
*
|
2012-12-21 |
2014-06-26 |
Gary S. Selwyn |
Dual-Zone, Atmospheric-Pressure Plasma Reactor for Materials Processing
|
KR20140095825A
(ko)
*
|
2013-01-25 |
2014-08-04 |
삼성전자주식회사 |
플라즈마 설비
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9738976B2
(en)
*
|
2013-02-27 |
2017-08-22 |
Ioxus, Inc. |
Energy storage device assembly
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
WO2014134577A1
(en)
|
2013-03-01 |
2014-09-04 |
Sio2 Medical Products, Inc. |
Plasma or cvd pre-treatment for lubricated pharmaceutical package, coating process and apparatus
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
KR102167557B1
(ko)
|
2013-03-11 |
2020-10-20 |
에스아이오2 메디컬 프로덕츠, 인크. |
코팅된 패키징
|
US9937099B2
(en)
|
2013-03-11 |
2018-04-10 |
Sio2 Medical Products, Inc. |
Trilayer coated pharmaceutical packaging with low oxygen transmission rate
|
EP2971227B1
(de)
|
2013-03-15 |
2017-11-15 |
Si02 Medical Products, Inc. |
Beschichtungsverfahren.
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US11066745B2
(en)
|
2014-03-28 |
2021-07-20 |
Sio2 Medical Products, Inc. |
Antistatic coatings for plastic vessels
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
US9478434B2
(en)
|
2014-09-24 |
2016-10-25 |
Applied Materials, Inc. |
Chlorine-based hardmask removal
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
WO2017004265A1
(en)
|
2015-06-30 |
2017-01-05 |
Endologix, Inc. |
Locking assembly for coupling guidewire to delivery system
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
CA2995225C
(en)
|
2015-08-18 |
2023-08-29 |
Sio2 Medical Products, Inc. |
Pharmaceutical and other packaging with low oxygen transmission rate
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US9773643B1
(en)
*
|
2016-06-30 |
2017-09-26 |
Lam Research Corporation |
Apparatus and method for deposition and etch in gap fill
|
JP6645921B2
(ja)
*
|
2016-07-07 |
2020-02-14 |
キオクシア株式会社 |
プラズマ処理装置およびプラズマ処理方法
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US11339477B2
(en)
*
|
2016-11-30 |
2022-05-24 |
Jiangsu Favored Nanotechnology Co., LTD |
Plasma polymerization coating apparatus and process
|
CN106622824B
(zh)
*
|
2016-11-30 |
2018-10-12 |
江苏菲沃泰纳米科技有限公司 |
一种等离子体聚合涂层装置
|
CN106756888B
(zh)
|
2016-11-30 |
2018-07-13 |
江苏菲沃泰纳米科技有限公司 |
一种纳米镀膜设备旋转货架装置
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
WO2018187679A1
(en)
|
2017-04-07 |
2018-10-11 |
Applied Materials, Inc. |
Plasma density control on substrate edge
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
KR102536206B1
(ko)
*
|
2017-04-14 |
2023-05-23 |
스미토모덴키고교가부시키가이샤 |
샤워 헤드
|
US10358717B2
(en)
*
|
2017-04-21 |
2019-07-23 |
Lam Research Corporation |
Method for depositing high deposition rate, thick tetraethyl orthosilicate film with low compressive stress, high film stability and low shrinkage
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
GB201709446D0
(en)
|
2017-06-14 |
2017-07-26 |
Semblant Ltd |
Plasma processing apparatus
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
SG11201912567RA
(en)
|
2017-06-27 |
2020-01-30 |
Canon Anelva Corp |
Plasma processing apparatus
|
CN114666965A
(zh)
|
2017-06-27 |
2022-06-24 |
佳能安内华股份有限公司 |
等离子体处理装置
|
PL3648552T3
(pl)
|
2017-06-27 |
2022-06-13 |
Canon Anelva Corporation |
Urządzenie do obróbki plazmowej
|
WO2019003312A1
(ja)
*
|
2017-06-27 |
2019-01-03 |
キヤノンアネルバ株式会社 |
プラズマ処理装置
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10555412B2
(en)
|
2018-05-10 |
2020-02-04 |
Applied Materials, Inc. |
Method of controlling ion energy distribution using a pulse generator with a current-return output stage
|
EP3817517A4
(de)
*
|
2018-06-26 |
2022-03-16 |
Canon Anelva Corporation |
Plasmabehandlungsvorrichtung, plasmabehandlungsverfahren, programm und speichermedium
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11476145B2
(en)
|
2018-11-20 |
2022-10-18 |
Applied Materials, Inc. |
Automatic ESC bias compensation when using pulsed DC bias
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
Applied Materials, Inc. |
Ceramic showerheads with conductive electrodes
|
JP7451540B2
(ja)
|
2019-01-22 |
2024-03-18 |
アプライド マテリアルズ インコーポレイテッド |
パルス状電圧波形を制御するためのフィードバックループ
|
US11508554B2
(en)
|
2019-01-24 |
2022-11-22 |
Applied Materials, Inc. |
High voltage filter assembly
|
JP6807420B2
(ja)
*
|
2019-02-21 |
2021-01-06 |
株式会社Kokusai Electric |
半導体装置の製造方法、基板処理装置およびプログラム
|
US11462389B2
(en)
|
2020-07-31 |
2022-10-04 |
Applied Materials, Inc. |
Pulsed-voltage hardware assembly for use in a plasma processing system
|
US11798790B2
(en)
|
2020-11-16 |
2023-10-24 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
US11901157B2
(en)
|
2020-11-16 |
2024-02-13 |
Applied Materials, Inc. |
Apparatus and methods for controlling ion energy distribution
|
US11495470B1
(en)
|
2021-04-16 |
2022-11-08 |
Applied Materials, Inc. |
Method of enhancing etching selectivity using a pulsed plasma
|
US11948780B2
(en)
|
2021-05-12 |
2024-04-02 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
US11791138B2
(en)
|
2021-05-12 |
2023-10-17 |
Applied Materials, Inc. |
Automatic electrostatic chuck bias compensation during plasma processing
|
US11967483B2
(en)
|
2021-06-02 |
2024-04-23 |
Applied Materials, Inc. |
Plasma excitation with ion energy control
|
US11810760B2
(en)
|
2021-06-16 |
2023-11-07 |
Applied Materials, Inc. |
Apparatus and method of ion current compensation
|
US11569066B2
(en)
|
2021-06-23 |
2023-01-31 |
Applied Materials, Inc. |
Pulsed voltage source for plasma processing applications
|
US11776788B2
(en)
|
2021-06-28 |
2023-10-03 |
Applied Materials, Inc. |
Pulsed voltage boost for substrate processing
|
US11476090B1
(en)
|
2021-08-24 |
2022-10-18 |
Applied Materials, Inc. |
Voltage pulse time-domain multiplexing
|
JP2023043720A
(ja)
*
|
2021-09-16 |
2023-03-29 |
キオクシア株式会社 |
基板処理装置、及び半導体装置の製造方法
|
US11694876B2
(en)
|
2021-12-08 |
2023-07-04 |
Applied Materials, Inc. |
Apparatus and method for delivering a plurality of waveform signals during plasma processing
|
CN114908337B
(zh)
*
|
2022-05-27 |
2023-09-08 |
北京北方华创微电子装备有限公司 |
半导体工艺设备
|