DE69308408T2 - Negativ-arbeitendes Schutzlackmaterial und Verfahren zur Herstellung von Mustern - Google Patents

Negativ-arbeitendes Schutzlackmaterial und Verfahren zur Herstellung von Mustern

Info

Publication number
DE69308408T2
DE69308408T2 DE69308408T DE69308408T DE69308408T2 DE 69308408 T2 DE69308408 T2 DE 69308408T2 DE 69308408 T DE69308408 T DE 69308408T DE 69308408 T DE69308408 T DE 69308408T DE 69308408 T2 DE69308408 T2 DE 69308408T2
Authority
DE
Germany
Prior art keywords
samples
negative
production
protective lacquer
lacquer material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69308408T
Other languages
English (en)
Other versions
DE69308408D1 (de
Inventor
Yoshiyuki Tani
Masayuki Endo
Fumiyoshi Urano
Takanori Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Fujifilm Wako Pure Chemical Corp
Original Assignee
Wako Pure Chemical Industries Ltd
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chemical Industries Ltd, Matsushita Electric Industrial Co Ltd filed Critical Wako Pure Chemical Industries Ltd
Application granted granted Critical
Publication of DE69308408D1 publication Critical patent/DE69308408D1/de
Publication of DE69308408T2 publication Critical patent/DE69308408T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
DE69308408T 1992-07-15 1993-07-01 Negativ-arbeitendes Schutzlackmaterial und Verfahren zur Herstellung von Mustern Expired - Lifetime DE69308408T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21096192 1992-07-15

Publications (2)

Publication Number Publication Date
DE69308408D1 DE69308408D1 (de) 1997-04-10
DE69308408T2 true DE69308408T2 (de) 1997-08-21

Family

ID=16597982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69308408T Expired - Lifetime DE69308408T2 (de) 1992-07-15 1993-07-01 Negativ-arbeitendes Schutzlackmaterial und Verfahren zur Herstellung von Mustern

Country Status (4)

Country Link
US (1) US5389491A (de)
EP (1) EP0579420B1 (de)
KR (1) KR100232387B1 (de)
DE (1) DE69308408T2 (de)

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* Cited by examiner, † Cited by third party
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DE4323289A1 (de) * 1993-07-12 1995-01-19 Siemens Ag Strahlungsempfindliche Lackzusammensetzung
JPH08152716A (ja) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp ネガ型レジスト及びレジストパターンの形成方法
JP3690847B2 (ja) * 1995-09-20 2005-08-31 富士通株式会社 レジスト組成物及びパターン形成方法
US6090518A (en) * 1997-05-07 2000-07-18 Mitsubishi Chemical Corporation Radiation sensitive composition
US6110641A (en) * 1997-12-04 2000-08-29 Shipley Company, L.L.C. Radiation sensitive composition containing novel dye
KR100596125B1 (ko) * 1998-12-22 2006-07-05 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP3929653B2 (ja) * 1999-08-11 2007-06-13 富士フイルム株式会社 ネガ型レジスト組成物
US6338931B1 (en) * 1999-08-16 2002-01-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
TW500976B (en) * 1999-08-25 2002-09-01 Tokyo Ohka Kogyo Co Ltd Multilayered body for photolithographic patterning
JP2003107707A (ja) * 2001-09-28 2003-04-09 Clariant (Japan) Kk 化学増幅型ポジ型感放射線性樹脂組成物
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
KR100495055B1 (ko) * 2002-10-10 2005-06-14 엘지전자 주식회사 자외선 경화수지의 패턴 형성 장치 및 방법
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7235348B2 (en) * 2003-05-22 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
US7981588B2 (en) * 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP5138157B2 (ja) * 2005-05-17 2013-02-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4732038B2 (ja) 2005-07-05 2011-07-27 東京応化工業株式会社 化合物、ポジ型レジスト組成物およびレジストパターン形成方法
US11675267B2 (en) * 2020-03-23 2023-06-13 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4343885A (en) * 1978-05-09 1982-08-10 Dynachem Corporation Phototropic photosensitive compositions containing fluoran colorformer
DE3662952D1 (en) * 1985-08-12 1989-05-24 Hoechst Celanese Corp Process for obtaining negative images from positive photoresists
CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
JPH01293339A (ja) * 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
JPH0215270A (ja) * 1988-07-04 1990-01-18 Tosoh Corp フォトレジスト組成物
JPH02120366A (ja) * 1988-10-31 1990-05-08 Hitachi Ltd 放射線感応性組成物およびそれを用いたパターン形成法
CA2019693A1 (en) * 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
JP2660352B2 (ja) * 1989-09-20 1997-10-08 日本ゼオン株式会社 レジスト組成物
DE4006190A1 (de) * 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2861344B2 (ja) * 1990-09-19 1999-02-24 三菱化学株式会社 ネガ型感光性組成物
JP2861309B2 (ja) * 1990-07-12 1999-02-24 三菱化学株式会社 ネガ型感光性組成物
DE4025959A1 (de) * 1990-08-16 1992-02-20 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
JPH04107560A (ja) * 1990-08-29 1992-04-09 Mitsubishi Kasei Corp ネガ型感光性組成物
JP3000643B2 (ja) * 1990-09-14 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JPH04143761A (ja) * 1990-10-04 1992-05-18 Oki Electric Ind Co Ltd 感光性樹脂組成物
JPH04186248A (ja) * 1990-11-21 1992-07-03 Mitsubishi Electric Corp 化学増幅ネガ型レジスト用組成物
JPH04215658A (ja) * 1990-12-13 1992-08-06 Nippon Kayaku Co Ltd ネガ型感放射線性レジスト組成物
JP2985351B2 (ja) * 1991-04-12 1999-11-29 住友化学工業株式会社 ネガ型フォトレジスト組成物
JPH04291261A (ja) * 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物
JPH04291260A (ja) * 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物

Also Published As

Publication number Publication date
DE69308408D1 (de) 1997-04-10
KR100232387B1 (ko) 1999-12-01
EP0579420A3 (de) 1995-06-14
EP0579420A2 (de) 1994-01-19
KR940005993A (ko) 1994-03-22
EP0579420B1 (de) 1997-03-05
US5389491A (en) 1995-02-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

Owner name: WAKO PURE CHEMICAL INDUSTRIES, LTD., OSAKA, JP