DE69232932T2 - Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen - Google Patents

Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen

Info

Publication number
DE69232932T2
DE69232932T2 DE69232932T DE69232932T DE69232932T2 DE 69232932 T2 DE69232932 T2 DE 69232932T2 DE 69232932 T DE69232932 T DE 69232932T DE 69232932 T DE69232932 T DE 69232932T DE 69232932 T2 DE69232932 T2 DE 69232932T2
Authority
DE
Germany
Prior art keywords
type
substrate material
doped
pct
walls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69232932T
Other languages
English (en)
Other versions
DE69232932D1 (de
Inventor
Ross Wenham
Andrew Green
Yousef Taouk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSG Solar AG
Original Assignee
Pacific Solar Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pacific Solar Pty Ltd filed Critical Pacific Solar Pty Ltd
Application granted granted Critical
Publication of DE69232932D1 publication Critical patent/DE69232932D1/de
Publication of DE69232932T2 publication Critical patent/DE69232932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
DE69232932T 1991-12-09 1992-12-09 Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen Expired - Lifetime DE69232932T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPK994691 1991-12-09
PCT/AU1992/000658 WO1993012543A1 (en) 1991-12-09 1992-12-09 Buried contact, interconnected thin film and bulk photovoltaic cells

Publications (2)

Publication Number Publication Date
DE69232932D1 DE69232932D1 (de) 2003-04-03
DE69232932T2 true DE69232932T2 (de) 2003-08-14

Family

ID=3775878

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232932T Expired - Lifetime DE69232932T2 (de) 1991-12-09 1992-12-09 Vergrabener kontakt, miteinander verbundene dünnschicht- und grossvolumige photovoltaische zellen

Country Status (8)

Country Link
US (1) US5595607A (de)
EP (1) EP0616727B1 (de)
JP (1) JP3416707B2 (de)
AT (1) ATE233433T1 (de)
AU (1) AU663350B2 (de)
CA (1) CA2125580A1 (de)
DE (1) DE69232932T2 (de)
WO (1) WO1993012543A1 (de)

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US6572631B1 (en) 1993-10-22 2003-06-03 Gynetech Pty Ltd. Transvaginal tube as an aid to laparoscopic surgery
AUPM483494A0 (en) * 1994-03-31 1994-04-28 Pacific Solar Pty Limited Multiple layer thin film solar cells
AU680130B2 (en) * 1994-03-31 1997-07-17 Csg Solar Ag Multiple layer thin film solar cells with buried contacts
NL1000264C2 (nl) * 1995-05-01 1996-11-04 Frans Willem Saris Zonnecel met meerlaagsstructuur van dunne films silicium.
AUPN703895A0 (en) * 1995-12-07 1996-01-04 Unisearch Limited Solar cell contacting machine
US5864168A (en) * 1997-02-18 1999-01-26 Texas Instruments Incorporated Apparatus and method for reduced substrate noise coupling
EP0881694A1 (de) * 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solarzelle und Verfahren zu ihrer Herstellung
JPH11103079A (ja) 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6034321A (en) * 1998-03-24 2000-03-07 Essential Research, Inc. Dot-junction photovoltaic cells using high-absorption semiconductors
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20100108118A1 (en) * 2008-06-02 2010-05-06 Daniel Luch Photovoltaic power farm structure and installation
US6363629B1 (en) 2000-02-18 2002-04-02 Curtis International, Inc. Vehicle hitch mount assembly for a snow plow
JP3904559B2 (ja) * 2001-10-19 2007-04-11 仗祐 中田 発光又は受光用半導体モジュールおよびその製造方法
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
DE10345736A1 (de) * 2003-10-01 2005-05-04 Wulf Naegel Photovoltaikelement
US7335555B2 (en) * 2004-02-05 2008-02-26 Advent Solar, Inc. Buried-contact solar cells with self-doping contacts
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
EP1787327A4 (de) * 2004-06-04 2010-09-08 Newsouth Innovations Pty Ltd Dünnfilm-solarzellen-verbindung
US7936019B2 (en) * 2004-07-13 2011-05-03 Rochester Institute Of Technology Nano and MEMS power sources and methods thereof
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
JP4324970B2 (ja) * 2005-03-28 2009-09-02 セイコーエプソン株式会社 光電変換装置、画像表示装置、光電変換装置の製造方法、および画像表示装置の製造方法
DE102005038027A1 (de) * 2005-08-06 2007-02-08 Jenoptik Automatisierungstechnik Gmbh Verfahren zum Durchtrennen von spröden Flachmaterialien
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8829336B2 (en) * 2006-05-03 2014-09-09 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
WO2008022383A1 (en) * 2006-08-22 2008-02-28 Newsouth Innovations Pty Ltd Thin-film solar module
CA2568136C (en) * 2006-11-30 2008-07-29 Tenxc Wireless Inc. Butler matrix implementation
WO2008080160A1 (en) * 2006-12-22 2008-07-03 Advent Solar, Inc. Interconnect technologies for back contact solar cells and modules
JP5285880B2 (ja) * 2007-08-31 2013-09-11 シャープ株式会社 光電変換素子、光電変換素子接続体および光電変換モジュール
US20090126786A1 (en) * 2007-11-13 2009-05-21 Advent Solar, Inc. Selective Emitter and Texture Processes for Back Contact Solar Cells
KR101139456B1 (ko) 2008-01-07 2012-04-30 엘지전자 주식회사 백 컨택 태양전지 및 그 제조방법
TWI390747B (zh) * 2008-04-29 2013-03-21 Applied Materials Inc 使用單石模組組合技術製造的光伏打模組
WO2010134019A2 (en) * 2009-05-19 2010-11-25 Ramot At Tel Aviv University Ltd. Vertical junction pv cells
JP2010272738A (ja) * 2009-05-22 2010-12-02 Sanyo Electric Co Ltd 太陽電池モジュールの製造方法
WO2011097676A1 (en) * 2010-02-15 2011-08-18 Csg Solar Ag Contact composition
TWI470818B (zh) * 2010-03-24 2015-01-21 Hitachi Ltd Solar battery
US10211354B2 (en) * 2013-03-01 2019-02-19 Newsouth Innovations Pty Limited Monolithically integrated solar cell system
GB2526482A (en) 2013-03-15 2015-11-25 Mtpv Power Corp Method and structure for multi-cell devices without physical isolation

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US3682708A (en) * 1969-10-07 1972-08-08 Westinghouse Electric Corp Solar cell
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
FR2390014A1 (de) * 1977-05-05 1978-12-01 Ibm
US4283589A (en) * 1978-05-01 1981-08-11 Massachusetts Institute Of Technology High-intensity, solid-state solar cell
US4200472A (en) * 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4278473A (en) * 1979-08-24 1981-07-14 Varian Associates, Inc. Monolithic series-connected solar cell
FR2480501A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication
US4295002A (en) * 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4595790A (en) * 1984-12-28 1986-06-17 Sohio Commercial Development Co. Method of making current collector grid and materials therefor
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
US4933021A (en) * 1988-11-14 1990-06-12 Electric Power Research Institute Monolithic series-connected solar cells employing shorted p-n junctions for electrical isolation
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same

Also Published As

Publication number Publication date
EP0616727A4 (de) 1996-11-13
EP0616727B1 (de) 2003-02-26
JPH07501660A (ja) 1995-02-16
AU663350B2 (en) 1995-10-05
EP0616727A1 (de) 1994-09-28
US5595607A (en) 1997-01-21
DE69232932D1 (de) 2003-04-03
ATE233433T1 (de) 2003-03-15
WO1993012543A1 (en) 1993-06-24
CA2125580A1 (en) 1993-06-24
AU3078192A (en) 1993-07-19
JP3416707B2 (ja) 2003-06-16

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: CSG SOLAR AG,, 06766 THALHEIM, DE

8364 No opposition during term of opposition