DE69222448T2 - Backfilling Verfahren zum Herstellen einer Mikrostruktur mit Membran - Google Patents
Backfilling Verfahren zum Herstellen einer Mikrostruktur mit MembranInfo
- Publication number
- DE69222448T2 DE69222448T2 DE69222448T DE69222448T DE69222448T2 DE 69222448 T2 DE69222448 T2 DE 69222448T2 DE 69222448 T DE69222448 T DE 69222448T DE 69222448 T DE69222448 T DE 69222448T DE 69222448 T2 DE69222448 T2 DE 69222448T2
- Authority
- DE
- Germany
- Prior art keywords
- microstructure
- membrane
- producing
- backfilling process
- backfilling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/652,148 US5295395A (en) | 1991-02-07 | 1991-02-07 | Diaphragm-based-sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69222448D1 DE69222448D1 (de) | 1997-11-06 |
DE69222448T2 true DE69222448T2 (de) | 1998-02-26 |
Family
ID=24615695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69222448T Expired - Fee Related DE69222448T2 (de) | 1991-02-07 | 1992-02-06 | Backfilling Verfahren zum Herstellen einer Mikrostruktur mit Membran |
Country Status (4)
Country | Link |
---|---|
US (3) | US5295395A (de) |
EP (4) | EP1107294A3 (de) |
JP (4) | JP3277467B2 (de) |
DE (1) | DE69222448T2 (de) |
Families Citing this family (102)
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US5220838A (en) * | 1991-03-28 | 1993-06-22 | The Foxboro Company | Overpressure-protected, differential pressure sensor and method of making the same |
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EP0616688B1 (de) * | 1991-12-13 | 1996-04-17 | Honeywell Inc. | Entwurf von piezoresistivem drucksensor aus silizium |
US5323656A (en) * | 1992-05-12 | 1994-06-28 | The Foxboro Company | Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
EP0681691B1 (de) * | 1993-01-19 | 1996-07-31 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. | Drucksensor |
DE4315012B4 (de) * | 1993-05-06 | 2007-01-11 | Robert Bosch Gmbh | Verfahren zur Herstellung von Sensoren und Sensor |
AU658524B1 (en) * | 1993-08-17 | 1995-04-13 | Yokogawa Electric Corporation | Semiconductor type differential pressure measurement apparatus and method for manufacturing the same |
DE4332057A1 (de) * | 1993-09-21 | 1995-03-30 | Siemens Ag | Integrierte mikromechanische Sensorvorrichtung und Verfahren zu deren Herstellung |
US20020053734A1 (en) | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
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US6030851A (en) * | 1995-06-07 | 2000-02-29 | Grandmont; Paul E. | Method for overpressure protected pressure sensor |
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JP3079983B2 (ja) * | 1995-12-26 | 2000-08-21 | 株式会社日立製作所 | 半導体型燃焼圧センサ |
US8033838B2 (en) | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
AU4801297A (en) | 1996-10-07 | 1998-05-05 | Lucas Novasensor | Silicon at least 5 micron high acute cavity with channel by oxidizing fusion bonding and stop etching |
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CN1257578A (zh) * | 1997-03-24 | 2000-06-21 | 集成微型机器公司 | 批量生产的半导体薄膜压力传感器及其制造方法 |
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US5898359A (en) * | 1997-12-19 | 1999-04-27 | Delco Electronics Corp. | Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith |
US5909627A (en) * | 1998-05-18 | 1999-06-01 | Philips Electronics North America Corporation | Process for production of thin layers of semiconductor material |
WO2000002014A1 (en) * | 1998-07-07 | 2000-01-13 | The Goodyear Tire And Rubber Company | Dual output capacitance interface circuit |
US6150681A (en) * | 1998-07-24 | 2000-11-21 | Silicon Microstructures, Inc. | Monolithic flow sensor and pressure sensor |
US6107170A (en) * | 1998-07-24 | 2000-08-22 | Smi Corporation | Silicon sensor contact with platinum silicide, titanium/tungsten and gold |
US20020003274A1 (en) * | 1998-08-27 | 2002-01-10 | Janusz Bryzek | Piezoresistive sensor with epi-pocket isolation |
US6006607A (en) * | 1998-08-31 | 1999-12-28 | Maxim Integrated Products, Inc. | Piezoresistive pressure sensor with sculpted diaphragm |
US6351996B1 (en) * | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
US6346742B1 (en) * | 1998-11-12 | 2002-02-12 | Maxim Integrated Products, Inc. | Chip-scale packaged pressure sensor |
US6229190B1 (en) * | 1998-12-18 | 2001-05-08 | Maxim Integrated Products, Inc. | Compensated semiconductor pressure sensor |
US6617098B1 (en) * | 1999-07-13 | 2003-09-09 | Input/Output, Inc. | Merged-mask micro-machining process |
US6860153B2 (en) * | 2000-02-22 | 2005-03-01 | Simon Fraser University | Gas pressure sensor based on short-distance heat conduction and method for fabricating same |
GB0015500D0 (en) * | 2000-06-23 | 2000-08-16 | Randox Lab Ltd | Production of silicon diaphragms by precision grinding |
JP3920015B2 (ja) * | 2000-09-14 | 2007-05-30 | 東京エレクトロン株式会社 | Si基板の加工方法 |
US6622558B2 (en) * | 2000-11-30 | 2003-09-23 | Orbital Research Inc. | Method and sensor for detecting strain using shape memory alloys |
DE10129821C2 (de) * | 2001-06-13 | 2003-06-18 | X Fab Semiconductor Foundries | Verfahren zum Passivieren anodischer Bondgebiete, die über elektrisch aktiven Strukturen von mikroelektromechanischen Systemen angeordnet sind (Microelectromechnical System: MEMS) |
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JP2003329526A (ja) * | 2002-05-13 | 2003-11-19 | Hitachi Unisia Automotive Ltd | 圧力センサ |
DE10257097B4 (de) * | 2002-12-05 | 2005-12-22 | X-Fab Semiconductor Foundries Ag | Verfahren zur Herstellung von mikroelektromechanischen Systemen (Microelectromechanical Systems: MEMS) mittels Silizium-Hochtemperatur-Fusionsbonden |
US7259466B2 (en) * | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
US7361593B2 (en) * | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
DE10314910A1 (de) * | 2003-04-01 | 2004-11-11 | Siemens Ag | Drucksensor |
DE102004006197B4 (de) * | 2003-07-04 | 2013-10-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Drucksensors |
DE10334238A1 (de) * | 2003-07-28 | 2005-02-24 | Robert Bosch Gmbh | Sensoreinlasskanal |
US7153759B2 (en) * | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
US7089797B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Temperature insensitive pressure sensor |
US7143652B2 (en) | 2004-10-18 | 2006-12-05 | Silverbrook Research Pty Ltd | Pressure sensor for high acceleration environment |
US7159467B2 (en) | 2004-10-18 | 2007-01-09 | Silverbrook Research Pty Ltd | Pressure sensor with conductive ceramic membrane |
JP2008517254A (ja) * | 2004-10-18 | 2008-05-22 | シルバーブルック リサーチ ピーティワイ リミテッド | 微小電気機械圧力センサ |
US7093494B2 (en) | 2004-10-18 | 2006-08-22 | Silverbrook Research Pty Ltd | Micro-electromechanical pressure sensor |
US7234357B2 (en) | 2004-10-18 | 2007-06-26 | Silverbrook Research Pty Ltd | Wafer bonded pressure sensor |
US7240560B2 (en) | 2004-10-18 | 2007-07-10 | Silverbrook Research Pty Ltd | Pressure sensor with remote power source |
US7124643B2 (en) | 2004-10-18 | 2006-10-24 | Silverbrook Research Pty Ltd | Pressure sensor with non-planar membrane |
US7121145B2 (en) * | 2004-10-18 | 2006-10-17 | Silverbrook Research Pty Ltd | Capacitative pressure sensor |
US7089790B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with laminated membrane |
US7089798B2 (en) | 2004-10-18 | 2006-08-15 | Silverbrook Research Pty Ltd | Pressure sensor with thin membrane |
US7194901B2 (en) | 2004-10-18 | 2007-03-27 | Silverbrook Research Pty Ltd | Pressure sensor with apertured membrane guard |
US6968744B1 (en) | 2004-10-18 | 2005-11-29 | Silverbrook Research Pty Ltd | Capacitative pressure sensor with close electrodes |
US7379629B1 (en) | 2004-12-12 | 2008-05-27 | Burns David W | Optically coupled resonant pressure sensor |
US7443509B1 (en) | 2004-12-12 | 2008-10-28 | Burns David W | Optical and electronic interface for optically coupled resonators |
US7605391B2 (en) * | 2004-12-12 | 2009-10-20 | Burns David W | Optically coupled resonator |
US7499604B1 (en) | 2004-12-12 | 2009-03-03 | Burns David W | Optically coupled resonant pressure sensor and process |
US7176048B1 (en) | 2004-12-12 | 2007-02-13 | Burns David W | Optically coupled sealed-cavity resonator and process |
US20060214266A1 (en) * | 2005-03-23 | 2006-09-28 | Jordan Larry L | Bevel dicing semiconductor components |
EP1719993A1 (de) * | 2005-05-06 | 2006-11-08 | STMicroelectronics S.r.l. | Integrierter Differenzdrucksensor und Verfahren zu dessen Herstellung |
US20060276008A1 (en) * | 2005-06-02 | 2006-12-07 | Vesa-Pekka Lempinen | Thinning |
US20070052047A1 (en) * | 2005-09-01 | 2007-03-08 | Costas Hadjiloucas | Metal contact systems for semiconductor-based pressure sensors exposed to harsh chemical and thermal environments |
US7329932B2 (en) * | 2005-09-12 | 2008-02-12 | Teledyne Licensing, Llc | Microelectromechanical (MEM) viscosity sensor and method |
EP2275793A1 (de) * | 2006-05-23 | 2011-01-19 | Sensirion Holding AG | Drucksensor mit einer Kammer und Herstellungsverfahren dafür |
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US7493822B2 (en) * | 2007-07-05 | 2009-02-24 | Honeywell International Inc. | Small gauge pressure sensor using wafer bonding and electrochemical etch stopping |
EP2159558A1 (de) * | 2008-08-28 | 2010-03-03 | Sensirion AG | Verfahren zur Herstellung eines integrierten Drucksensors |
EP2166330A1 (de) * | 2008-09-22 | 2010-03-24 | GE Infrastructure Sensing, Inc. | Miniaturdruckwandler mit länglichem Basiswafer und einsetzbar bei hohen Temperaturen |
FR2977319B1 (fr) * | 2011-07-01 | 2014-03-14 | Commissariat Energie Atomique | Dispositif de mesure de pression a sensiblite optimisee |
US8824706B2 (en) | 2011-08-30 | 2014-09-02 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
US8724832B2 (en) | 2011-08-30 | 2014-05-13 | Qualcomm Mems Technologies, Inc. | Piezoelectric microphone fabricated on glass |
US8811636B2 (en) | 2011-11-29 | 2014-08-19 | Qualcomm Mems Technologies, Inc. | Microspeaker with piezoelectric, metal and dielectric membrane |
DE102012102020A1 (de) * | 2012-03-09 | 2013-09-12 | Epcos Ag | Mikromechanisches Messelement |
WO2014206737A1 (en) * | 2013-06-27 | 2014-12-31 | Soitec | Methods of fabricating semiconductor structures including cavities filled with a sacrifical material |
EP2871456B1 (de) | 2013-11-06 | 2018-10-10 | Invensense, Inc. | Drucksensor und Herstellungsmethode für einen Drucksensor |
EP2871455B1 (de) | 2013-11-06 | 2020-03-04 | Invensense, Inc. | Drucksensor |
US9891161B2 (en) | 2014-03-14 | 2018-02-13 | Rosemount Inc. | Corrosion rate measurement |
JP2015175833A (ja) * | 2014-03-18 | 2015-10-05 | セイコーエプソン株式会社 | 物理量センサー、高度計、電子機器および移動体 |
EP3127158B1 (de) * | 2014-04-04 | 2019-06-12 | Robert Bosch GmbH | Membranbasierter sensor und verfahren zur robusten herstellung eines membranbasierten sensors |
US10830689B2 (en) | 2014-09-30 | 2020-11-10 | Rosemount Inc. | Corrosion rate measurement using sacrificial probe |
US9212054B1 (en) * | 2014-10-15 | 2015-12-15 | DunAn Sensing, LLC | Pressure sensors and methods of making the same |
US9506827B2 (en) * | 2014-10-15 | 2016-11-29 | Dunan Sensing Llc | Pressure sensors and methods of making the same |
US9903779B2 (en) * | 2015-02-09 | 2018-02-27 | Infineon Technologies Ag | Sensor network supporting self-calibration of pressure sensors |
EP3076146B1 (de) | 2015-04-02 | 2020-05-06 | Invensense, Inc. | Drucksensor |
US10190968B2 (en) | 2015-06-26 | 2019-01-29 | Rosemount Inc. | Corrosion rate measurement with multivariable sensor |
US10197462B2 (en) * | 2016-05-25 | 2019-02-05 | Honeywell International Inc. | Differential pressure sensor full overpressure protection device |
US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
CN113785178A (zh) | 2019-05-17 | 2021-12-10 | 应美盛股份有限公司 | 气密性改进的压力传感器 |
US11573145B2 (en) * | 2020-03-31 | 2023-02-07 | Rosemount Aerospace Inc. | Capacitive MEMS pressure sensor and method of manufacture |
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EP0052948A1 (de) * | 1980-11-24 | 1982-06-02 | Motorola, Inc. | Herstellung von Oxid-Isolationen |
DE3148403C2 (de) * | 1981-12-07 | 1986-05-07 | Siemens AG, 1000 Berlin und 8000 München | Miniaturdruckmeßwandler |
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-
1991
- 1991-02-07 US US07/652,148 patent/US5295395A/en not_active Expired - Lifetime
-
1992
- 1992-02-03 JP JP04641192A patent/JP3277467B2/ja not_active Expired - Fee Related
- 1992-02-06 DE DE69222448T patent/DE69222448T2/de not_active Expired - Fee Related
- 1992-02-06 EP EP01200467A patent/EP1107294A3/de not_active Withdrawn
- 1992-02-06 EP EP96115964A patent/EP0756164A3/de not_active Ceased
- 1992-02-06 EP EP92300996A patent/EP0500234B1/de not_active Expired - Lifetime
- 1992-02-06 EP EP01200463A patent/EP1098181A3/de not_active Withdrawn
- 1992-12-21 US US07/994,157 patent/US5318652A/en not_active Expired - Lifetime
-
1994
- 1994-03-24 US US08/217,044 patent/US5683594A/en not_active Expired - Lifetime
-
2000
- 2000-12-12 JP JP2000376904A patent/JP3418611B2/ja not_active Expired - Fee Related
-
2001
- 2001-10-17 JP JP2001319914A patent/JP3462488B2/ja not_active Expired - Fee Related
- 2001-10-17 JP JP2001319918A patent/JP3464657B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3462488B2 (ja) | 2003-11-05 |
EP0756164A3 (de) | 1997-06-04 |
DE69222448D1 (de) | 1997-11-06 |
EP1107294A2 (de) | 2001-06-13 |
EP0500234B1 (de) | 1997-10-01 |
JP2001223368A (ja) | 2001-08-17 |
JPH0626961A (ja) | 1994-02-04 |
EP1107294A3 (de) | 2001-11-14 |
JP3277467B2 (ja) | 2002-04-22 |
EP0500234A3 (en) | 1993-03-24 |
JP2002185014A (ja) | 2002-06-28 |
JP3418611B2 (ja) | 2003-06-23 |
JP3464657B2 (ja) | 2003-11-10 |
EP0756164A2 (de) | 1997-01-29 |
US5295395A (en) | 1994-03-22 |
EP0500234A2 (de) | 1992-08-26 |
EP1098181A3 (de) | 2001-08-01 |
US5318652A (en) | 1994-06-07 |
US5683594A (en) | 1997-11-04 |
EP1098181A2 (de) | 2001-05-09 |
JP2002198540A (ja) | 2002-07-12 |
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