DE69219057D1 - Tunneleffekttransistor - Google Patents

Tunneleffekttransistor

Info

Publication number
DE69219057D1
DE69219057D1 DE69219057T DE69219057T DE69219057D1 DE 69219057 D1 DE69219057 D1 DE 69219057D1 DE 69219057 T DE69219057 T DE 69219057T DE 69219057 T DE69219057 T DE 69219057T DE 69219057 D1 DE69219057 D1 DE 69219057D1
Authority
DE
Germany
Prior art keywords
effect transistor
tunnel effect
tunnel
transistor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69219057T
Other languages
English (en)
Other versions
DE69219057T2 (de
Inventor
Toshio Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69219057D1 publication Critical patent/DE69219057D1/de
Application granted granted Critical
Publication of DE69219057T2 publication Critical patent/DE69219057T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
DE69219057T 1991-10-15 1992-10-15 Tunneleffekttransistor Expired - Fee Related DE69219057T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3265749A JP2773487B2 (ja) 1991-10-15 1991-10-15 トンネルトランジスタ

Publications (2)

Publication Number Publication Date
DE69219057D1 true DE69219057D1 (de) 1997-05-22
DE69219057T2 DE69219057T2 (de) 1998-02-26

Family

ID=17421473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69219057T Expired - Fee Related DE69219057T2 (de) 1991-10-15 1992-10-15 Tunneleffekttransistor

Country Status (4)

Country Link
US (1) US5589696A (de)
EP (1) EP0538036B1 (de)
JP (1) JP2773487B2 (de)
DE (1) DE69219057T2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69202554T2 (de) * 1991-12-25 1995-10-19 Nec Corp Tunneltransistor und dessen Herstellungsverfahren.
US6693317B2 (en) * 2001-07-13 2004-02-17 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
AU2003258948A1 (en) * 2002-06-19 2004-01-06 The Board Of Trustees Of The Leland Stanford Junior University Insulated-gate semiconductor device and approach involving junction-induced intermediate region
CN1762047A (zh) 2003-03-20 2006-04-19 松下电器产业株式会社 半导体装置及其制造方法
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
JP5481067B2 (ja) 2005-07-26 2014-04-23 台湾積體電路製造股▲ふん▼有限公司 代替活性エリア材料の集積回路への組み込みのための解決策
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US8441000B2 (en) * 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
EP2062290B1 (de) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defektreduzierung durch kontrolle des aspektverhältnisses
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
JP2008252086A (ja) 2007-03-12 2008-10-16 Interuniv Micro Electronica Centrum Vzw ゲートトンネル障壁を持つトンネル電界効果トランジスタ
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
JP5416212B2 (ja) 2008-09-19 2014-02-12 台湾積體電路製造股▲ふん▼有限公司 エピタキシャル層の成長によるデバイス形成
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
JP5910965B2 (ja) * 2012-03-07 2016-04-27 国立研究開発法人産業技術総合研究所 トンネル電界効果トランジスタの製造方法及びトンネル電界効果トランジスタ
EP2674978B1 (de) * 2012-06-15 2020-07-29 IMEC vzw Tunnelfeldeffekttransistorvorrichtung und Verfahren zur Herstellung der Vorrichtung
JP2014053435A (ja) 2012-09-06 2014-03-20 Toshiba Corp 半導体装置
EP2808897B1 (de) 2013-05-30 2021-06-30 IMEC vzw Tunnelfeldeffekttransistor und Verfahren zur Herstellung davon
US8975123B2 (en) 2013-07-09 2015-03-10 International Business Machines Corporation Tunnel field-effect transistors with a gate-swing broken-gap heterostructure
JP6331375B2 (ja) * 2013-12-17 2018-05-30 富士通株式会社 電界効果型半導体装置
JP6175411B2 (ja) * 2014-06-16 2017-08-02 東芝メモリ株式会社 半導体装置
WO2016168994A1 (zh) * 2015-04-22 2016-10-27 华为技术有限公司 隧穿晶体管及隧穿晶体管的制备方法
CN109065615B (zh) * 2018-06-12 2021-05-07 西安电子科技大学 一种新型平面InAs/Si异质隧穿场效应晶体管及其制备方法
CN110459541B (zh) * 2019-06-27 2022-05-13 西安电子科技大学 一种平面互补型隧穿场效应晶体管反相器
CN111640791A (zh) * 2020-04-26 2020-09-08 西安电子科技大学 基于InAs/GaSb异质结的量子阱隧穿场效应晶体管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390352A (en) * 1961-11-06 1968-06-25 Itt Tunnel-effect semiconductor, used as an oscillator or amplifier, forms part of surface of waveguide or chamber
JPH0673375B2 (ja) * 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
EP0667645A1 (de) * 1984-11-05 1995-08-16 Hitachi, Ltd. Supraleitende Anordnung
JPS63250855A (ja) * 1987-04-08 1988-10-18 Hitachi Ltd バイポ−ラ型トランジスタ
US4969019A (en) * 1987-08-27 1990-11-06 Texas Instruments Incorporated Three-terminal tunnel device
JPH02268429A (ja) * 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマエッチング装置
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions
CA2052970C (en) * 1990-10-08 1996-07-02 Takao Nakamura Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPH05235057A (ja) * 1992-02-19 1993-09-10 Sanyo Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH05110086A (ja) 1993-04-30
EP0538036B1 (de) 1997-04-16
DE69219057T2 (de) 1998-02-26
US5589696A (en) 1996-12-31
JP2773487B2 (ja) 1998-07-09
EP0538036A2 (de) 1993-04-21
EP0538036A3 (de) 1995-03-22

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee