DE69215160D1 - Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers - Google Patents

Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers

Info

Publication number
DE69215160D1
DE69215160D1 DE69215160T DE69215160T DE69215160D1 DE 69215160 D1 DE69215160 D1 DE 69215160D1 DE 69215160 T DE69215160 T DE 69215160T DE 69215160 T DE69215160 T DE 69215160T DE 69215160 D1 DE69215160 D1 DE 69215160D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
tunable semiconductor
tunable
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69215160T
Other languages
English (en)
Other versions
DE69215160T2 (de
Inventor
Yasutaka Sakata
Masayuki Yamaguchi
Tatsuya Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69215160D1 publication Critical patent/DE69215160D1/de
Publication of DE69215160T2 publication Critical patent/DE69215160T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/11—Metal-organic CVD, ruehrwein type
DE69215160T 1991-08-09 1992-08-07 Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers Expired - Fee Related DE69215160T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22476391 1991-08-09
JP2204092 1992-01-10

Publications (2)

Publication Number Publication Date
DE69215160D1 true DE69215160D1 (de) 1996-12-19
DE69215160T2 DE69215160T2 (de) 1997-03-06

Family

ID=26359201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215160T Expired - Fee Related DE69215160T2 (de) 1991-08-09 1992-08-07 Verfahren zur Herstellung eines abstimmbaren Halbleiterlasers

Country Status (4)

Country Link
US (1) US5284791A (de)
EP (1) EP0527615B1 (de)
JP (1) JP2943510B2 (de)
DE (1) DE69215160T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360763A (en) * 1992-09-07 1994-11-01 Nec Corporation Method for fabricating an optical semiconductor device
GB2299893B (en) * 1992-09-10 1997-01-22 Mitsubishi Electric Corp Method for producing a quantum wire structure
JPH06232099A (ja) 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
US5565693A (en) * 1993-01-07 1996-10-15 Nec Corporation Semiconductor optical integrated circuits
US5436193A (en) * 1993-11-02 1995-07-25 Xerox Corporation Method of fabricating a stacked active region laser array
JP2770722B2 (ja) * 1993-11-11 1998-07-02 日本電気株式会社 波長可変半導体レーザの製造方法
JP3234086B2 (ja) * 1994-01-18 2001-12-04 キヤノン株式会社 光半導体デバイス及びその製造方法
KR0146714B1 (ko) * 1994-08-08 1998-11-02 양승택 평면 매립형 레이저 다이오드의 제조방법
JP3374878B2 (ja) * 1994-09-02 2003-02-10 三菱電機株式会社 半導体エッチング方法
US5847415A (en) * 1995-03-31 1998-12-08 Nec Corporation Light emitting device having current blocking structure
JPH1075009A (ja) * 1996-08-30 1998-03-17 Nec Corp 光半導体装置とその製造方法
TW393785B (en) * 1997-09-19 2000-06-11 Siemens Ag Method to produce many semiconductor-bodies
US6122109A (en) 1998-04-16 2000-09-19 The University Of New Mexico Non-planar micro-optical structures
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
US6459709B1 (en) * 2001-01-31 2002-10-01 Nova Crystals, Inc. Wavelength-tunable semiconductor laser diode
TWI236193B (en) * 2004-02-18 2005-07-11 Univ Nat Chiao Tung Fast wavelength-tunable laser system using Fabry-Perot laser diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213805A (en) * 1973-05-28 1980-07-22 Hitachi, Ltd. Liquid phase epitaxy method of forming a filimentary laser device
JPS5276890A (en) * 1975-12-23 1977-06-28 Agency Of Ind Science & Technol Production of g#a#-a#a# hetero-junction semiconductor device
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
KR900009229B1 (ko) * 1988-04-28 1990-12-24 한국 과학기술원 선택적 에피택시법에 의한 표면 방출형 AlGaAs/GaAs 반도체 레이저 다이오드의 제조방법
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
DE58904573D1 (de) * 1989-02-15 1993-07-08 Siemens Ag Abstimmbarer halbleiterlaser.
US4940672A (en) * 1989-03-17 1990-07-10 Kopin Corporation Method of making monolithic integrated III-V type laser devices and silicon devices on silicon
US5084894A (en) * 1989-06-20 1992-01-28 Optical Measurement Technology Development Co., Ltd. Optical semiconductor device
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
DE3934998A1 (de) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag Elektrisch wellenlaengenabstimmbarer halbleiterlaser
US5070510A (en) * 1989-12-12 1991-12-03 Sharp Kabushiki Kaisha Semiconductor laser device
JPH0750815B2 (ja) * 1990-08-24 1995-05-31 日本電気株式会社 半導体光集積素子の製造方法

Also Published As

Publication number Publication date
EP0527615B1 (de) 1996-11-13
EP0527615A1 (de) 1993-02-17
JPH05251817A (ja) 1993-09-28
JP2943510B2 (ja) 1999-08-30
US5284791A (en) 1994-02-08
DE69215160T2 (de) 1997-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee