DE69206579D1 - Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung. - Google Patents

Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung.

Info

Publication number
DE69206579D1
DE69206579D1 DE69206579T DE69206579T DE69206579D1 DE 69206579 D1 DE69206579 D1 DE 69206579D1 DE 69206579 T DE69206579 T DE 69206579T DE 69206579 T DE69206579 T DE 69206579T DE 69206579 D1 DE69206579 D1 DE 69206579D1
Authority
DE
Germany
Prior art keywords
making
integrated circuit
electrical connection
electrical
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69206579T
Other languages
English (en)
Other versions
DE69206579T2 (de
Inventor
Bruce Alan Myers
Christine Redder Coapman
John Karl Isenberg
James Arthur Blanton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Delphi Technologies Inc
Original Assignee
Delco Electronics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delco Electronics LLC filed Critical Delco Electronics LLC
Application granted granted Critical
Publication of DE69206579D1 publication Critical patent/DE69206579D1/de
Publication of DE69206579T2 publication Critical patent/DE69206579T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0102Calcium [Ca]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01049Indium [In]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49121Beam lead frame or beam lead device
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
DE69206579T 1991-10-28 1992-09-15 Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung. Expired - Lifetime DE69206579T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/783,468 US5281772A (en) 1991-10-28 1991-10-28 Electrical connector having energy-formed solder stops and methods of making and using the same

Publications (2)

Publication Number Publication Date
DE69206579D1 true DE69206579D1 (de) 1996-01-18
DE69206579T2 DE69206579T2 (de) 1996-05-02

Family

ID=25129343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69206579T Expired - Lifetime DE69206579T2 (de) 1991-10-28 1992-09-15 Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung.

Country Status (3)

Country Link
US (2) US5281772A (de)
EP (1) EP0540070B1 (de)
DE (1) DE69206579T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3007497B2 (ja) * 1992-11-11 2000-02-07 三菱電機株式会社 半導体集積回路装置、その製造方法、及びその実装方法
US5400950A (en) * 1994-02-22 1995-03-28 Delco Electronics Corporation Method for controlling solder bump height for flip chip integrated circuit devices
TW406454B (en) * 1996-10-10 2000-09-21 Berg Tech Inc High density connector and method of manufacture
US20020033411A1 (en) * 2000-09-20 2002-03-21 Peterson Michael J. Method and apparatus for flex circuit reflow attachment
US6437669B1 (en) * 2000-09-29 2002-08-20 Applied Micro Circuits Corporation Microwave to millimeter wave frequency substrate interface
SE0202288D0 (sv) * 2002-07-22 2002-07-22 St Jude Medical A heart stimulator
TWI221343B (en) * 2003-10-21 2004-09-21 Advanced Semiconductor Eng Wafer structure for preventing contamination of bond pads during SMT process and process for the same
US7172438B2 (en) * 2005-03-03 2007-02-06 Samtec, Inc. Electrical contacts having solder stops
US20060196857A1 (en) * 2005-03-03 2006-09-07 Samtec, Inc. Methods of manufacturing electrical contacts having solder stops
JP5145729B2 (ja) * 2007-02-26 2013-02-20 富士電機株式会社 半田接合方法およびそれを用いた半導体装置の製造方法
JP5017472B1 (ja) * 2011-03-16 2012-09-05 株式会社東芝 電子機器
JP5479406B2 (ja) * 2011-06-30 2014-04-23 日本航空電子工業株式会社 コネクタ
US10076800B2 (en) 2015-11-30 2018-09-18 Cree Fayetteville, Inc. Method and device for a high temperature vacuum-safe solder stop utilizing laser processing of solderable surfaces for an electronic module assembly
US20230010770A1 (en) * 2021-07-09 2023-01-12 Cree, Inc. High Performance Semiconductor Device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405224A (en) * 1966-04-20 1968-10-08 Nippon Electric Co Sealed enclosure for electronic device
US3801366A (en) * 1971-02-16 1974-04-02 J Lemelson Method of making an electrical circuit
US4554732A (en) * 1982-02-16 1985-11-26 General Electric Company High reliability electrical components
JPS58207699A (ja) * 1982-05-28 1983-12-03 株式会社日立製作所 配線回路基板の製造方法
JPS59106140A (ja) * 1982-12-10 1984-06-19 Matsushita Electronics Corp 半導体装置
AT389793B (de) * 1986-03-25 1990-01-25 Philips Nv Leiterplatte fuer gedruckte schaltungen und verfahren zur herstellung solcher leiterplatten
JPH0698506B2 (ja) * 1986-12-08 1994-12-07 トヨタ自動車株式会社 金属基体上への分散合金層の形成方法
US4779339A (en) * 1987-05-06 1988-10-25 Nippon Cmk Corporation Method of producing printed circuit boards
US4931323A (en) * 1987-12-10 1990-06-05 Texas Instruments Incorporated Thick film copper conductor patterning by laser
JPH0728128B2 (ja) * 1988-03-11 1995-03-29 松下電器産業株式会社 セラミック多層配線基板とその製造方法
US4847003A (en) * 1988-04-04 1989-07-11 Delco Electronics Corporation Electrical conductors
US4859808A (en) * 1988-06-28 1989-08-22 Delco Electronics Corporation Electrical conductor having unique solder dam configuration
US4959751A (en) * 1988-08-16 1990-09-25 Delco Electronics Corporation Ceramic hybrid integrated circuit having surface mount device solder stress reduction
JPH02187045A (ja) * 1989-01-13 1990-07-23 Sharp Corp フェイスダウンボンディング用パッドの形成方法
JPH02228050A (ja) * 1989-02-28 1990-09-11 Hitachi Ltd 回路基板とその製法および該基板を用いた電子回路装置
US5041901A (en) * 1989-05-10 1991-08-20 Hitachi, Ltd. Lead frame and semiconductor device using the same
IT1233008B (it) * 1989-09-21 1992-03-14 Sgs Thomson Microelectronics Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici
JP2678804B2 (ja) * 1990-04-06 1997-11-19 トヨタ自動車株式会社 鉄合金基材上に純Cu肉盛層を形成する方法
US5178658A (en) * 1991-09-17 1993-01-12 The Charles Stark Draper Laboratory, Inc. Method for forming an optical waveguide by selective volatization
US5281684A (en) * 1992-04-30 1994-01-25 Motorola, Inc. Solder bumping of integrated circuit die

Also Published As

Publication number Publication date
EP0540070A1 (de) 1993-05-05
EP0540070B1 (de) 1995-12-06
DE69206579T2 (de) 1996-05-02
US5334422A (en) 1994-08-02
US5281772A (en) 1994-01-25

Similar Documents

Publication Publication Date Title
DE69432068T2 (de) Verfahren zur Herstellung einer Isolationsgrabenstruktur für eine integrierte Schaltung.
DE3686125T2 (de) Verfahren zur herstellung einer integrierten schaltung.
DE3587100D1 (de) Verfahren zur herstellung einer auf der halbleiter-auf-isolator-technologie basierenden integrierten schaltung.
DE69033595T2 (de) Verfahren zur Herstellung einer Isolationsstruktur für eine vollständige dielektrische Isolation für halbleiterintegrierte Schaltung
DE68909195T2 (de) Elektrische Verbindungsanordnung und Verfahren zur Herstellung einer elektrischen Verbindung.
DE3889357D1 (de) Verfahren zur Herstellung einer integrierten Kundenwunschschaltung mit isoliertem Gate.
DE68902364D1 (de) Verfahren zur herstellung einer oxiranverbindung.
DE3882412T2 (de) Verfahren zur Herstellung einer elektronischen Vorrichtung.
DE69525273D1 (de) Verfahren zur Herstellung einer integrierten Schaltung
DE69206579T2 (de) Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung.
DE69520779T2 (de) Verfahren zur Herstellung von einer aktiven metallenthaltenden Kupferlegierung
DE59005028D1 (de) Lötverbinder und Verfahren zur Herstellung einer elektrischen Schaltung mit diesem Lötverbinder.
DE68923732D1 (de) Verfahren zur Herstellung einer elektrischen Vorrichtung.
DE69118308T2 (de) Verfahren zur Herstellung einer elektrischen Verbindung für eine integrierte Schaltung
DE3888696D1 (de) Verfahren zur herstellung durchkontaktierter leiterplatten.
DE69535348D1 (de) Verfahren zur Herstellung einer verbesserten dielektrischen Schicht für eine integrierte Schaltung
DE3483809D1 (de) Verfahren zur herstellung einer dielektrisch isolierten integrierten schaltung.
DE3583668D1 (de) Verfahren zur herstellung einer integrierten halbleiterschaltungsanordnung, die misfets enthaelt.
DE3484733D1 (de) Verfahren zur herstellung einer dielektrisch isolierten integrierten schaltungsanordnung.
DE69311926D1 (de) Verfahren zur Herstellung einer elektrisch leitenden Organosiloxanzusammensetzung
DE69015721D1 (de) Verfahren zur Herstellung einer supraleitenden Schaltung.
DE59504089D1 (de) Verfahren zur herstellung einer elektrisch leitenden verbindung
DE68909623D1 (de) Anschlussleiter für Wickelkondensatoren und Verfahren zur Herstellung.
DE3673208D1 (de) Verfahren zur herstellung einer ldd-halbleiteranordnung.
DE69529909T2 (de) Verfahren zur herstellung einer elektronischen schaltung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DELPHI TECHNOLOGIES, INC., TROY, MICH., US