DE69202554D1 - Tunneltransistor und dessen Herstellungsverfahren. - Google Patents

Tunneltransistor und dessen Herstellungsverfahren.

Info

Publication number
DE69202554D1
DE69202554D1 DE69202554T DE69202554T DE69202554D1 DE 69202554 D1 DE69202554 D1 DE 69202554D1 DE 69202554 T DE69202554 T DE 69202554T DE 69202554 T DE69202554 T DE 69202554T DE 69202554 D1 DE69202554 D1 DE 69202554D1
Authority
DE
Germany
Prior art keywords
manufacturing process
tunnel transistor
tunnel
transistor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69202554T
Other languages
English (en)
Other versions
DE69202554T2 (de
Inventor
Toshio Baba
Tetsuya Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34159391A external-priority patent/JP2792295B2/ja
Priority claimed from JP3341594A external-priority patent/JP2768097B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69202554D1 publication Critical patent/DE69202554D1/de
Publication of DE69202554T2 publication Critical patent/DE69202554T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
DE69202554T 1991-12-25 1992-12-24 Tunneltransistor und dessen Herstellungsverfahren. Expired - Fee Related DE69202554T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34159391A JP2792295B2 (ja) 1991-12-25 1991-12-25 トンネルトランジスタ
JP3341594A JP2768097B2 (ja) 1991-12-25 1991-12-25 トンネルトランジスタ

Publications (2)

Publication Number Publication Date
DE69202554D1 true DE69202554D1 (de) 1995-06-22
DE69202554T2 DE69202554T2 (de) 1995-10-19

Family

ID=26577000

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69202554T Expired - Fee Related DE69202554T2 (de) 1991-12-25 1992-12-24 Tunneltransistor und dessen Herstellungsverfahren.

Country Status (3)

Country Link
US (1) US5705827A (de)
EP (1) EP0549373B1 (de)
DE (1) DE69202554T2 (de)

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AUPP147398A0 (en) 1998-01-23 1998-02-19 Defence Science And Technology Organisation Dual non-parallel electronic field electro-optic effect device
AU743888B2 (en) * 1998-01-23 2002-02-07 Defence Science And Technology Organisation Dual non-parallel electronic field electro-optic effect device
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6596617B1 (en) * 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6754104B2 (en) 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6956262B1 (en) 2001-12-21 2005-10-18 Synopsys Inc. Charge trapping pull up element
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US6617643B1 (en) 2002-06-28 2003-09-09 Mcnc Low power tunneling metal-oxide-semiconductor (MOS) device
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) * 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7465967B2 (en) 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US8575651B2 (en) 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7709269B2 (en) * 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US7812370B2 (en) * 2007-07-25 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling
US7834345B2 (en) * 2008-09-05 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistors with superlattice channels
US8587075B2 (en) * 2008-11-18 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Tunnel field-effect transistor with metal source
US8026509B2 (en) * 2008-12-30 2011-09-27 Intel Corporation Tunnel field effect transistor and method of manufacturing same
KR101265178B1 (ko) * 2011-12-23 2013-05-15 서울대학교산학협력단 간접 밴드갭 반도체를 이용한 전기발광소자
CN104332502B (zh) 2014-11-07 2017-06-06 华为技术有限公司 一种互补隧穿场效应晶体管及其制作方法

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US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
US4379005A (en) * 1979-10-26 1983-04-05 International Business Machines Corporation Semiconductor device fabrication
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4800415A (en) * 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
JPS62209864A (ja) * 1986-03-11 1987-09-16 Fujitsu Ltd 半導体装置
JPH0783108B2 (ja) * 1986-07-25 1995-09-06 株式会社日立製作所 半導体装置
US4905059A (en) * 1986-09-25 1990-02-27 Regents Of The University Of Minnesota Modulation doped radiation emitting semiconductor device
FR2607630B1 (fr) * 1986-11-28 1989-03-10 Rosencher Emmanuel Jonction tunnel controlee par la surface
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
JPH0622248B2 (ja) * 1987-01-30 1994-03-23 日本電気株式会社 電界効果トランジスタ
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
JP2773487B2 (ja) * 1991-10-15 1998-07-09 日本電気株式会社 トンネルトランジスタ

Also Published As

Publication number Publication date
DE69202554T2 (de) 1995-10-19
EP0549373A1 (de) 1993-06-30
EP0549373B1 (de) 1995-05-17
US5705827A (en) 1998-01-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee