DE69133443D1 - Elektromagnetische Umwandler - Google Patents

Elektromagnetische Umwandler

Info

Publication number
DE69133443D1
DE69133443D1 DE69133443T DE69133443T DE69133443D1 DE 69133443 D1 DE69133443 D1 DE 69133443D1 DE 69133443 T DE69133443 T DE 69133443T DE 69133443 T DE69133443 T DE 69133443T DE 69133443 D1 DE69133443 D1 DE 69133443D1
Authority
DE
Germany
Prior art keywords
electromagnetic converters
converters
electromagnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69133443T
Other languages
English (en)
Other versions
DE69133443T8 (de
DE69133443T2 (de
Inventor
Robert M Park
James M Depuydt
Hwa Cheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Application granted granted Critical
Publication of DE69133443D1 publication Critical patent/DE69133443D1/de
Publication of DE69133443T2 publication Critical patent/DE69133443T2/de
Publication of DE69133443T8 publication Critical patent/DE69133443T8/de
Active legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H01L33/285—Materials of the light emitting region containing only elements of group II and group VI of the periodic system characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3059—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping in II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
DE69133443T 1990-08-24 1991-08-20 Elektromagnetische Umwandler Active DE69133443T8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/573,428 US5248631A (en) 1990-08-24 1990-08-24 Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
US573428 1990-08-24

Publications (3)

Publication Number Publication Date
DE69133443D1 true DE69133443D1 (de) 2005-02-24
DE69133443T2 DE69133443T2 (de) 2006-02-09
DE69133443T8 DE69133443T8 (de) 2006-04-27

Family

ID=24291956

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133443T Active DE69133443T8 (de) 1990-08-24 1991-08-20 Elektromagnetische Umwandler

Country Status (6)

Country Link
US (2) US5248631A (de)
EP (3) EP0793281B1 (de)
JP (1) JP3078611B2 (de)
KR (1) KR0156744B1 (de)
DE (1) DE69133443T8 (de)
HK (1) HK1002373A1 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
DE69229265T2 (de) * 1991-03-18 1999-09-23 Univ Boston Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
DE69220942T2 (de) * 1991-05-15 1998-03-05 Minnesota Mining & Mfg Blau-gruen diodenlaser
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
US5541407A (en) * 1992-09-24 1996-07-30 The United States Of America As Represented By The Secretary Of Commerce Arsenic atom source
US5772759A (en) * 1992-09-28 1998-06-30 Aixtron Gmbh Process for producing p-type doped layers, in particular, in II-VI semiconductors
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
KR960704343A (ko) * 1994-06-09 1996-08-31 이데이 노부유키 질소도핑 ii-vi족 화합물반도체의 성막방법
JP3410299B2 (ja) * 1996-08-08 2003-05-26 科学技術振興事業団 高濃度にドーピングしたＺｎＳｅ結晶の製造方法
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors
US5821548A (en) * 1996-12-20 1998-10-13 Technical Visions, Inc. Beam source for production of radicals and metastables
DE19703615A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
US6090637A (en) * 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US5767534A (en) 1997-02-24 1998-06-16 Minnesota Mining And Manufacturing Company Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
US6291085B1 (en) 1998-08-03 2001-09-18 The Curators Of The University Of Missouri Zinc oxide films containing P-type dopant and process for preparing same
US6342313B1 (en) 1998-08-03 2002-01-29 The Curators Of The University Of Missouri Oxide films and process for preparing same
TW434844B (en) * 1999-12-04 2001-05-16 Nat Science Council Ohmic contact structure of II-VI semiconductor and its fabricating method
US6693033B2 (en) * 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20020195057A1 (en) * 2001-06-21 2002-12-26 Motorola, Inc. Apparatus for fabricating semiconductor structures and method of forming the same
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6639249B2 (en) * 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030026310A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Structure and method for fabrication for a lighting device
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
CA2396325C (en) * 2001-09-06 2010-03-30 Sumitomo Electric Industries, Ltd. Zn1-xmgxsyse1-y pin photodiode and zn1-xmgxsyse1-y avalanche-photodiode
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
US6887736B2 (en) * 2002-06-24 2005-05-03 Cermet, Inc. Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
US6963090B2 (en) 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
KR100901427B1 (ko) 2004-02-06 2009-06-05 호야 가부시키가이샤 반도체 재료 및 이를 이용한 반도체 소자
US20060049425A1 (en) * 2004-05-14 2006-03-09 Cermet, Inc. Zinc-oxide-based light-emitting diode
US20070111372A1 (en) * 2004-07-20 2007-05-17 Cermet, Inc. Methods of forming a p-type group ii-vi semiconductor crystal layer on a substrate
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
JP4832250B2 (ja) * 2006-10-23 2011-12-07 Ｈｏｙａ株式会社 ｐ型半導体材料、半導体素子、有機エレクトロルミネッセンス素子、及びｐ型半導体材料の製造方法
TW200949004A (en) * 2008-04-25 2009-12-01 Lumenz Inc Metalorganic chemical vapor deposition of zinc oxide
WO2010009436A2 (en) 2008-07-17 2010-01-21 Uriel Solar Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
JP2012526391A (ja) * 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー インジウム空乏機構を利用してインジウム含有基板上で成長した半導体素子
WO2011072269A2 (en) * 2009-12-10 2011-06-16 Uriel Solar Inc. HIGH POWER EFFICIENCY POLYCRYSTALLINE CdTe THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
CN103597614B (zh) 2011-06-15 2017-03-01 3M创新有限公司 具有改善的转换效率的太阳能电池
RU2511279C1 (ru) * 2012-10-22 2014-04-10 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Нижегородский Государственный Университет Им. Н.И. Лобачевского" Способ напыления в вакууме структур для приборов электронной техники, способ регулирования концентрации легирующих примесей при выращивании таких структур и резистивный источник паров напыляемого материала и легирующей примеси для реализации указанного способа регулирования, а также основанный на использовании этого источника паров способ напыления в вакууме кремний-германиевых структур
US20150053259A1 (en) * 2013-08-22 2015-02-26 Plant PV P-type doping of ii-vi materials with rapid vapor deposition using radical nitrogen
US10526723B2 (en) * 2015-06-16 2020-01-07 Georgia Tech Research Corporation System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux
WO2019103459A2 (ko) 2017-11-22 2019-05-31 주식회사 엘지화학 리튬 이차전지용 양극 첨가제의 제조방법
RU2699949C1 (ru) * 2019-02-08 2019-09-11 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Способ настройки эпитаксиального выращивания в вакууме легированных слоёв кремния и резистивный испарительный блок для его осуществления

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735212A (en) * 1971-02-25 1973-05-22 Zenith Radio Corp P-n junction semiconductor devices
US3745073A (en) * 1971-02-26 1973-07-10 Zenith Radio Corp Single-step process for making p-n junctions in zinc selenide
US4081764A (en) * 1972-10-12 1978-03-28 Minnesota Mining And Manufacturing Company Zinc oxide light emitting diode
US4483725A (en) * 1982-09-30 1984-11-20 At&T Bell Laboratories Reactive vapor deposition of multiconstituent material
JPS61117199A (ja) * 1984-11-08 1986-06-04 Nec Corp 結晶成長法
JPH0621036B2 (ja) * 1984-11-09 1994-03-23 大塚化学株式会社 導電性チタン酸塩誘導体及びその製造法
US4735910A (en) * 1985-09-19 1988-04-05 Matsushita Electric Industrial Co., Ltd. In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
JPH07105342B2 (ja) * 1986-01-17 1995-11-13 三洋電機株式会社 化合物半導体の製造方法
JPH0728052B2 (ja) * 1986-01-27 1995-03-29 株式会社東芝 半導体発光素子およびその製造方法
JPH0617280B2 (ja) * 1987-03-18 1994-03-09 社団法人生産技術振興協会 ＺｎＳｅ単結晶作製法
JPH0728097B2 (ja) * 1987-05-20 1995-03-29 松下電器産業株式会社 半導体レ−ザ
JPH07517B2 (ja) * 1987-05-30 1995-01-11 松下電器産業株式会社 半導体結晶薄膜製造装置
JPH06104600B2 (ja) * 1987-05-30 1994-12-21 松下電器産業株式会社 半導体の製造方法
JPH01232651A (ja) * 1988-03-11 1989-09-18 Hitachi Ltd ラジカルビーム発生装置
JP2712257B2 (ja) * 1988-03-30 1998-02-10 ソニー株式会社 セレン化亜鉛の成長方法
JPH02262380A (ja) * 1989-04-03 1990-10-25 Toshiba Corp 半導体発光素子
JP2588280B2 (ja) * 1989-07-10 1997-03-05 シャープ株式会社 化合物半導体発光素子
US5150191A (en) * 1989-11-21 1992-09-22 Kabushiki Kaisha Toshiba P-type II-VI compound semiconductor doped

Also Published As

Publication number Publication date
HK1002373A1 (en) 1998-08-21
EP1447855A3 (de) 2004-12-29
EP0475606A3 (en) 1992-06-17
EP0475606A2 (de) 1992-03-18
KR0156744B1 (ko) 1998-12-01
EP0793281B1 (de) 2005-01-19
US5574296A (en) 1996-11-12
JP3078611B2 (ja) 2000-08-21
DE69133443T8 (de) 2006-04-27
DE69133443T2 (de) 2006-02-09
EP0793281A3 (de) 1998-02-04
EP1447855A2 (de) 2004-08-18
EP0793281A2 (de) 1997-09-03
JPH04234136A (ja) 1992-08-21
KR920005258A (ko) 1992-03-28
US5248631A (en) 1993-09-28

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