DE69130389D1 - Lithographische Verfahren - Google Patents

Lithographische Verfahren

Info

Publication number: DE69130389D1
Authority: DE; Germany
Prior art keywords: lithographic processes; lithographic; processes
Prior art date: 1990-12-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69130389T

Other languages

English (en)

Other versions

DE69130389T2 (de

Inventor

Joseph Gerard Garofalo

Robert Louis Kostelak

Christophe Pierrat

Sheila Vaidya

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

AT&T Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-12-05

Filing date

1991-11-28

Publication date

1998-11-26

1991-11-28 Application filed by AT&T Corp filed Critical AT&T Corp

1998-11-26 Publication of DE69130389D1 publication Critical patent/DE69130389D1/de

1999-04-29 Application granted granted Critical

1999-04-29 Publication of DE69130389T2 publication Critical patent/DE69130389T2/de

2011-11-29 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam

DE69130389T 1990-12-05 1991-11-28 Lithographische Verfahren Expired - Lifetime DE69130389T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US62267390A	1990-12-05	1990-12-05
US67360191A	1991-03-21	1991-03-21

Publications (2)

Publication Number	Publication Date
DE69130389D1 true DE69130389D1 (de)	1998-11-26
DE69130389T2 DE69130389T2 (de)	1999-04-29

Family

ID=27089252

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69130389T Expired - Lifetime DE69130389T2 (de)	1990-12-05	1991-11-28	Lithographische Verfahren

Country Status (5)

Country	Link
US (1)	US5275896A (de)
EP (1)	EP0489542B1 (de)
JP (1)	JP2593601B2 (de)
DE (1)	DE69130389T2 (de)
SG (1)	SG47403A1 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5465220A (en)	1992-06-02	1995-11-07	Fujitsu Limited	Optical exposure method
US5350618A (en) *	1991-03-01	1994-09-27	Teijin Seiki Co., Ltd.	Magnetic medium comprising a substrate having pits and grooves of specific shapes and depths
US5525534A (en) *	1992-03-13	1996-06-11	Fujitsu Limited	Method of producing a semiconductor device using a reticle having a polygonal shaped hole
US5308721A (en) *	1992-06-29	1994-05-03	At&T Bell Laboratories	Self-aligned method of making phase-shifting lithograhic masks having three or more phase-shifts
JPH0683029A (ja) *	1992-08-28	1994-03-25	Sony Corp	位相シフトマスク及びその作製方法
US5407785A (en) *	1992-12-18	1995-04-18	Vlsi Technology, Inc.	Method for generating dense lines on a semiconductor wafer using phase-shifting and multiple exposures
JP2500423B2 (ja) *	1993-02-17	1996-05-29	日本電気株式会社	位相シフトマスクの検査方法
JPH07248469A (ja) *	1994-03-11	1995-09-26	Mitsubishi Electric Corp	アパーチャおよびそのアパーチャを用いた光学装置
KR100399444B1 (ko) *	1995-06-30	2004-04-29	주식회사 하이닉스반도체	에지강조형위상반전마스크및그제조방법
JP4056571B2 (ja) *	1995-08-02	2008-03-05	株式会社半導体エネルギー研究所	半導体装置の作製方法
US5741624A (en) *	1996-02-13	1998-04-21	Micron Technology, Inc.	Method for reducing photolithographic steps in a semiconductor interconnect process
US5906911A (en) *	1997-03-28	1999-05-25	International Business Machines Corporation	Process of forming a dual damascene structure in a single photoresist film
US5908718A (en) *	1997-03-31	1999-06-01	Nec Corporation	Phase shifting photomask with two different transparent regions
US5972570A (en) *	1997-07-17	1999-10-26	International Business Machines Corporation	Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
US5981148A (en) *	1997-07-17	1999-11-09	International Business Machines Corporation	Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
US6185473B1 (en) *	1998-01-08	2001-02-06	Micron Technology, Inc.	Optical pattern transfer tool
TW388004B (en) *	1998-04-03	2000-04-21	United Microelectronics Corp	Alternating phase shift mask
US20050032351A1 (en) *	1998-12-21	2005-02-10	Mou-Shiung Lin	Chip structure and process for forming the same
AU2001247687A1 (en) *	2000-03-30	2001-10-15	Tokyo Electron Limited	Dry silylation plasma etch process
US7045444B2 (en) *	2000-12-19	2006-05-16	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en)	2001-01-18	2005-02-22	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing semiconductor device
TW586141B (en) *	2001-01-19	2004-05-01	Semiconductor Energy Lab	Semiconductor device and method of manufacturing the same
US7115453B2 (en) *	2001-01-29	2006-10-03	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and manufacturing method of the same
JP2002231627A (ja) *	2001-01-30	2002-08-16	Semiconductor Energy Lab Co Ltd	光電変換装置の作製方法
US7141822B2 (en) *	2001-02-09	2006-11-28	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP4993810B2 (ja)	2001-02-16	2012-08-08	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP5088993B2 (ja)	2001-02-16	2012-12-05	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP4718700B2 (ja)	2001-03-16	2011-07-06	株式会社半導体エネルギー研究所	半導体装置の作製方法
US7052943B2 (en)	2001-03-16	2006-05-30	Semiconductor Energy Laboratory Co., Ltd.	Method of manufacturing a semiconductor device
US6812081B2 (en) *	2001-03-26	2004-11-02	Semiconductor Energy Laboratory Co.,.Ltd.	Method of manufacturing semiconductor device
US6798073B2 (en)	2001-12-13	2004-09-28	Megic Corporation	Chip structure and process for forming the same
US7374976B2 (en) *	2002-11-22	2008-05-20	Semiconductor Energy Laboratory Co., Ltd.	Method for fabricating thin film transistor
US20040265748A1 (en) *	2003-06-30	2004-12-30	Robert Bristol	Pattern transfer of an extreme ultraviolet imaging layer via flood exposure of contact mask layer (EUV CML)
JP2015102608A (ja) *	2013-11-22	2015-06-04	Hoya株式会社	フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2015106001A (ja) *	2013-11-29	2015-06-08	Hoya株式会社	フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2017076146A (ja) *	2016-12-26	2017-04-20	Hoya株式会社	フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2017068281A (ja) *	2016-12-27	2017-04-06	Hoya株式会社	フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
US11764062B2 (en) *	2017-11-13	2023-09-19	Taiwan Semiconductor Manufacturing Company, Ltd.	Method of forming semiconductor structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3930857A (en) *	1973-05-03	1976-01-06	International Business Machines Corporation	Resist process
JPS61273545A (ja) *	1985-05-29	1986-12-03	Mitsubishi Electric Corp	フオトマスク
JPH0690504B2 (ja) *	1985-06-21	1994-11-14	株式会社日立製作所	ホトマスクの製造方法
US4751170A (en) *	1985-07-26	1988-06-14	Nippon Telegraph And Telephone Corporation	Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US4772539A (en) *	1987-03-23	1988-09-20	International Business Machines Corporation	High resolution E-beam lithographic technique
US4985374A (en) *	1989-06-30	1991-01-15	Kabushiki Kaisha Toshiba	Making a semiconductor device with ammonia treatment of photoresist
JPH0451151A (ja) *	1990-06-19	1992-02-19	Fujitsu Ltd	位相シフトレチクルの製作方法
JPH04128843A (ja) *	1990-09-20	1992-04-30	Fujitsu Ltd	露光用マスク製作方法

1991
- 1991-11-28 EP EP91311017A patent/EP0489542B1/de not_active Expired - Lifetime
- 1991-11-28 DE DE69130389T patent/DE69130389T2/de not_active Expired - Lifetime
- 1991-11-28 SG SG1996000697A patent/SG47403A1/en unknown
- 1991-12-04 JP JP34767991A patent/JP2593601B2/ja not_active Expired - Fee Related
1992
- 1992-09-11 US US07/943,980 patent/US5275896A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE69130389T2 (de)	1999-04-29
JP2593601B2 (ja)	1997-03-26
EP0489542A2 (de)	1992-06-10
JPH04274238A (ja)	1992-09-30
SG47403A1 (en)	1998-04-17
EP0489542A3 (en)	1992-09-23
EP0489542B1 (de)	1998-10-21
US5275896A (en)	1994-01-04

Legal Events

Date	Code	Title	Description
1999-11-18	8364	No opposition during term of opposition

Publication	Publication Date	Title
DE69130389D1 (de)	1998-11-26	Lithographische Verfahren
DE69123610D1 (de)	1997-01-30	Belichtungsverfahren
DE69128750T2 (de)	1998-08-27	Lichtempfindliches Bauelement
DK0450730T3 (da)	1993-05-03	Kloak-skæreapparat
DE69121004T2 (de)	1996-12-19	Beschichtungsverfahren
DE69127479D1 (de)	1997-10-09	Belichtungssystem
DE69128751D1 (de)	1998-02-26	Lichtempfindliches Bauelement
DE69128667T2 (de)	1998-05-07	Positionsbestimmungsmethode
DE69105946D1 (de)	1995-01-26	Verfahren zur vieleckbearbeitung.
DE69118435D1 (de)	1996-05-09	Vervielfältigungsgerät
DE69116322D1 (de)	1996-02-22	Bilderzeugungsverfahren
ITTO911046A0 (it)	1991-12-24	Metodo di sgrassaggio-pulitura
DE59510353D1 (de)	2002-10-10	Lithografisches Verfahren
IT1238759B (it)	1993-09-03	Apparecchio montapanna
DE68925924D1 (de)	1996-04-18	Photographisches Verfahren
DE69208769T2 (de)	1996-07-18	Hochauflösendes lithographisches Verfahren
DE69125860T2 (de)	1997-12-04	Verfahren zur Nodularisierung
BR9103251A (pt)	1992-05-26	Conjunto de acabador
IT9067875A0 (it)	1990-11-08	Veicolo bimodale-ibrido
DE69419802D1 (de)	1999-09-09	Fotografisches Verfahren
MX9100581A (es)	1992-04-01	Procedimiento
SE9001047D0 (sv)	1990-03-22	Stroemdel foer stallar
DE69128598D1 (de)	1998-02-12	Bilderzeugungsverfahren
DK165495C (da)	1993-04-19	Valse
SE9000782D0 (sv)	1990-03-06	Affischeringsmetod