DE69128876T2 - Dünnfilm-Halbleitervorrichtung - Google Patents

Dünnfilm-Halbleitervorrichtung

Info

Publication number
DE69128876T2
DE69128876T2 DE69128876T DE69128876T DE69128876T2 DE 69128876 T2 DE69128876 T2 DE 69128876T2 DE 69128876 T DE69128876 T DE 69128876T DE 69128876 T DE69128876 T DE 69128876T DE 69128876 T2 DE69128876 T2 DE 69128876T2
Authority
DE
Germany
Prior art keywords
thin film
semiconductor device
film semiconductor
thin
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69128876T
Other languages
English (en)
Other versions
DE69128876D1 (de
Inventor
Takayuki Shimada
Toshihiro Yamashita
Yasuhiro Matsushima
Yoji Yoshimura
Yutaka Takafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2338880A external-priority patent/JP2846736B2/ja
Priority claimed from JP2338879A external-priority patent/JPH04206971A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69128876D1 publication Critical patent/DE69128876D1/de
Publication of DE69128876T2 publication Critical patent/DE69128876T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
DE69128876T 1990-11-30 1991-11-29 Dünnfilm-Halbleitervorrichtung Expired - Lifetime DE69128876T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2338880A JP2846736B2 (ja) 1990-11-30 1990-11-30 薄膜半導体装置
JP2338879A JPH04206971A (ja) 1990-11-30 1990-11-30 薄膜半導体装置

Publications (2)

Publication Number Publication Date
DE69128876D1 DE69128876D1 (de) 1998-03-12
DE69128876T2 true DE69128876T2 (de) 1998-08-06

Family

ID=26576245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128876T Expired - Lifetime DE69128876T2 (de) 1990-11-30 1991-11-29 Dünnfilm-Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5528056A (de)
EP (1) EP0488801B1 (de)
KR (1) KR950003943B1 (de)
DE (1) DE69128876T2 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556679B2 (ja) 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6975296B1 (en) * 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3254007B2 (ja) 1992-06-09 2002-02-04 株式会社半導体エネルギー研究所 薄膜状半導体装置およびその作製方法
EP0582486A2 (de) * 1992-08-07 1994-02-09 Sharp Kabushiki Kaisha Dünnschicht-Transistor-Paar und Verfahren zu seiner Herstellung
US6624477B1 (en) * 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US6337232B1 (en) 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
JPH08213409A (ja) * 1995-02-06 1996-08-20 Nec Corp 半導体装置
JP3768260B2 (ja) * 1995-02-07 2006-04-19 株式会社半導体エネルギー研究所 トランスファゲイト回路
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JPH10154816A (ja) * 1996-11-21 1998-06-09 Semiconductor Energy Lab Co Ltd 半導体装置
KR100223832B1 (ko) * 1996-12-27 1999-10-15 구본준 반도체 소자 및 그 제조방법
US5923981A (en) * 1996-12-31 1999-07-13 Intel Corporation Cascading transistor gate and method for fabricating the same
JP3353875B2 (ja) * 1997-01-20 2002-12-03 シャープ株式会社 Ｓｏｉ・ｍｏｓ電界効果トランジスタ
US5821564A (en) * 1997-05-23 1998-10-13 Mosel Vitelic Inc. TFT with self-align offset gate
US5866445A (en) * 1997-07-11 1999-02-02 Texas Instruments Incorporated High density CMOS circuit with split gate oxide
US6140160A (en) 1997-07-28 2000-10-31 Micron Technology, Inc. Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
US6020222A (en) * 1997-12-16 2000-02-01 Advanced Micro Devices, Inc. Silicon oxide insulator (SOI) semiconductor having selectively linked body
US6118157A (en) * 1998-03-18 2000-09-12 National Semiconductor Corporation High voltage split gate CMOS transistors built in standard 2-poly core CMOS
US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
US6201267B1 (en) 1999-03-01 2001-03-13 Rensselaer Polytechnic Institute Compact low power complement FETs
US7122835B1 (en) * 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US8853696B1 (en) * 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
TW483287B (en) 1999-06-21 2002-04-11 Semiconductor Energy Lab EL display device, driving method thereof, and electronic equipment provided with the EL display device
GB2358082B (en) * 2000-01-07 2003-11-12 Seiko Epson Corp Semiconductor transistor
US7050878B2 (en) * 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
CN100508140C (zh) * 2001-11-30 2009-07-01 株式会社半导体能源研究所 用于半导体器件的制造方法
US7133737B2 (en) * 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
JP3992976B2 (ja) 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4030758B2 (ja) 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7214991B2 (en) * 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
TW595005B (en) * 2003-08-04 2004-06-21 Au Optronics Corp Thin film transistor and pixel structure with the same
JP4348644B2 (ja) * 2006-09-26 2009-10-21 セイコーエプソン株式会社 薄膜トランジスタ、電気光学装置および電子機器
US20090072313A1 (en) * 2007-09-19 2009-03-19 International Business Machines Corporation Hardened transistors in soi devices
US7692972B1 (en) 2008-07-22 2010-04-06 Actel Corporation Split gate memory cell for programmable circuit device
US8723260B1 (en) * 2009-03-12 2014-05-13 Rf Micro Devices, Inc. Semiconductor radio frequency switch with body contact
US8890256B2 (en) * 2009-03-20 2014-11-18 International Business Machines Corporation Structure for heavy ion tolerant device, method of manufacturing the same and structure thereof
JP2012064854A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
JP6283191B2 (ja) 2012-10-17 2018-02-21 株式会社半導体エネルギー研究所 半導体装置
US10367514B2 (en) 2015-01-24 2019-07-30 Circuit Seed, Llc Passive phased injection locked circuit
KR102201101B1 (ko) 2015-07-29 2021-01-11 서킷 시드, 엘엘씨 상보적 전류 전계효과 트랜지스터 소자 및 증폭기
WO2017019981A1 (en) 2015-07-30 2017-02-02 Circuit Seed, Llc Reference generator and current source transistor based on complementary current field-effect transistor devices
CN108141181A (zh) 2015-07-30 2018-06-08 电路种子有限责任公司 多级式且前馈补偿的互补电流场效应晶体管放大器
US10476457B2 (en) 2015-07-30 2019-11-12 Circuit Seed, Llc Low noise trans-impedance amplifiers based on complementary current field-effect transistor devices
CN111816610A (zh) * 2015-12-14 2020-10-23 电路种子有限责任公司 场效应晶体管
TWI668617B (zh) 2018-08-17 2019-08-11 友達光電股份有限公司 非矩形之異形觸控裝置
CN113823680A (zh) * 2021-01-21 2021-12-21 山东大学 一种新型的AlGaN/GaN异质结场效应晶体管及应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device
JPS56164568A (en) * 1980-05-22 1981-12-17 Toshiba Corp Semiconductor device
JPS6051272B2 (ja) * 1982-05-31 1985-11-13 株式会社東芝 積層型ｃｍｏｓインバ−タ装置
JPS62229873A (ja) * 1986-03-29 1987-10-08 Hitachi Ltd 薄膜半導体装置の製造方法
JP2802618B2 (ja) * 1987-03-26 1998-09-24 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
KR900005354B1 (ko) * 1987-12-31 1990-07-27 삼성전자 주식회사 Hct 반도체 장치의 제조방법
DE68926256T2 (de) * 1988-01-07 1996-09-19 Fujitsu Ltd Komplementäre Halbleiteranordnung
US4951113A (en) * 1988-11-07 1990-08-21 Xerox Corporation Simultaneously deposited thin film CMOS TFTs and their method of fabrication
JPH02137272A (ja) * 1988-11-17 1990-05-25 Ricoh Co Ltd Ｃｍｏｓ型薄膜トランジスター
US5012315A (en) * 1989-01-09 1991-04-30 Regents Of University Of Minnesota Split-gate field effect transistor
US5124769A (en) * 1990-03-02 1992-06-23 Nippon Telegraph And Telephone Corporation Thin film transistor
JPH04241466A (ja) * 1991-01-16 1992-08-28 Casio Comput Co Ltd 電界効果型トランジスタ
JP2572003B2 (ja) * 1992-03-30 1997-01-16 三星電子株式会社 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
KR950003943B1 (ko) 1995-04-21
EP0488801A1 (de) 1992-06-03
KR920010957A (ko) 1992-06-27
DE69128876D1 (de) 1998-03-12
EP0488801B1 (de) 1998-02-04
US5528056A (en) 1996-06-18

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