DE69125260T2 - Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen - Google Patents

Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen

Info

Publication number
DE69125260T2
DE69125260T2 DE69125260T DE69125260T DE69125260T2 DE 69125260 T2 DE69125260 T2 DE 69125260T2 DE 69125260 T DE69125260 T DE 69125260T DE 69125260 T DE69125260 T DE 69125260T DE 69125260 T2 DE69125260 T2 DE 69125260T2
Authority
DE
Germany
Prior art keywords
manufacturing
liquid crystal
thin film
crystal display
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125260T
Other languages
English (en)
Other versions
DE69125260D1 (de
Inventor
Yasuhiro Mitani
Katsumasa Ikubo
Yasunori Shimada
Hirohisa Tanaka
Hiroshi Morimoto
Yutaka Nishi
Tomohiko Yamamoto
Kenichi Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP40895990A external-priority patent/JP2694912B2/ja
Priority claimed from JP3004575A external-priority patent/JPH04236431A/ja
Priority claimed from JP3012004A external-priority patent/JPH04247433A/ja
Priority claimed from JP3030511A external-priority patent/JPH04269837A/ja
Priority claimed from JP3144914A external-priority patent/JP2634505B2/ja
Priority claimed from JP21394991A external-priority patent/JP2661672B2/ja
Priority claimed from JP21395091A external-priority patent/JP2709214B2/ja
Priority claimed from JP21395391A external-priority patent/JP2719252B2/ja
Priority claimed from JP21556191A external-priority patent/JPH0555254A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69125260D1 publication Critical patent/DE69125260D1/de
Application granted granted Critical
Publication of DE69125260T2 publication Critical patent/DE69125260T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
DE69125260T 1990-12-28 1991-12-24 Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen Expired - Fee Related DE69125260T2 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP40895990A JP2694912B2 (ja) 1990-12-28 1990-12-28 アクティブマトリクス基板の製造方法
JP3004575A JPH04236431A (ja) 1991-01-18 1991-01-18 アクティブマトリクス基板の製造方法
JP3012004A JPH04247433A (ja) 1991-02-01 1991-02-01 アクティブマトリクス基板の製造方法
JP3030511A JPH04269837A (ja) 1991-02-26 1991-02-26 薄膜トランジスタの製造方法
JP3144914A JP2634505B2 (ja) 1991-06-17 1991-06-17 薄膜トランジスタ及びその製造方法
JP21394991A JP2661672B2 (ja) 1991-08-26 1991-08-26 薄膜トランジスタおよびその製造方法
JP21395091A JP2709214B2 (ja) 1991-08-26 1991-08-26 薄膜トランジスタの製造方法
JP21395391A JP2719252B2 (ja) 1991-08-26 1991-08-26 薄膜トランジスタ
JP21556191A JPH0555254A (ja) 1991-08-27 1991-08-27 薄膜トランジスタおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69125260D1 DE69125260D1 (de) 1997-04-24
DE69125260T2 true DE69125260T2 (de) 1997-10-02

Family

ID=33545751

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125260T Expired - Fee Related DE69125260T2 (de) 1990-12-28 1991-12-24 Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen

Country Status (3)

Country Link
US (1) US5286659A (de)
EP (1) EP0493113B1 (de)
DE (1) DE69125260T2 (de)

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JP5303119B2 (ja) * 2007-06-05 2013-10-02 株式会社ジャパンディスプレイ 半導体装置
JP5704790B2 (ja) * 2008-05-07 2015-04-22 キヤノン株式会社 薄膜トランジスタ、および、表示装置
KR101436120B1 (ko) 2009-12-28 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR20120045178A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 박막 트랜지스터 및 이의 제조 방법
TWI605590B (zh) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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CN103247531B (zh) * 2012-02-14 2016-02-17 群康科技(深圳)有限公司 薄膜晶体管及其制作方法及显示器
JP2013229453A (ja) * 2012-04-26 2013-11-07 Sony Corp 半導体装置、表示装置及び半導体装置の製造方法
CN103489918A (zh) * 2012-06-08 2014-01-01 京东方科技集团股份有限公司 一种薄膜晶体管和阵列基板及其制造方法
WO2013183255A1 (ja) * 2012-06-08 2013-12-12 パナソニック株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
CN103165471A (zh) 2013-02-19 2013-06-19 京东方科技集团股份有限公司 薄膜晶体管及其制作方法和显示装置
CN107146818B (zh) 2017-06-27 2020-02-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法、阵列基板及显示装置
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Also Published As

Publication number Publication date
EP0493113A3 (en) 1992-09-02
EP0493113B1 (de) 1997-03-19
DE69125260D1 (de) 1997-04-24
US5286659A (en) 1994-02-15
EP0493113A2 (de) 1992-07-01

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