DE69123870D1 - Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer - Google Patents

Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer

Info

Publication number
DE69123870D1
DE69123870D1 DE69123870T DE69123870T DE69123870D1 DE 69123870 D1 DE69123870 D1 DE 69123870D1 DE 69123870 T DE69123870 T DE 69123870T DE 69123870 T DE69123870 T DE 69123870T DE 69123870 D1 DE69123870 D1 DE 69123870D1
Authority
DE
Germany
Prior art keywords
forming
aluminum layer
sputtering process
stepped wafer
stepped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69123870T
Other languages
English (en)
Other versions
DE69123870T2 (de
Inventor
Chien-Rhone Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69123870D1 publication Critical patent/DE69123870D1/de
Publication of DE69123870T2 publication Critical patent/DE69123870T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
DE69123870T 1990-03-30 1991-03-21 Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer Expired - Fee Related DE69123870T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/502,362 US5108570A (en) 1990-03-30 1990-03-30 Multistep sputtering process for forming aluminum layer over stepped semiconductor wafer

Publications (2)

Publication Number Publication Date
DE69123870D1 true DE69123870D1 (de) 1997-02-13
DE69123870T2 DE69123870T2 (de) 1997-05-22

Family

ID=23997467

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69123870T Expired - Fee Related DE69123870T2 (de) 1990-03-30 1991-03-21 Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer

Country Status (5)

Country Link
US (1) US5108570A (de)
EP (1) EP0451571B1 (de)
KR (1) KR100227236B1 (de)
DE (1) DE69123870T2 (de)
ES (1) ES2098279T3 (de)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
DE69031903T2 (de) 1989-11-30 1998-04-16 Sgs Thomson Microelectronics Verfahren zum Herstellen von Zwischenschicht-Kontakten
DE4028776C2 (de) * 1990-07-03 1994-03-10 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement
US6287963B1 (en) * 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
JPH04363024A (ja) * 1990-11-30 1992-12-15 Toshiba Corp 半導体装置の製造方法
KR920010620A (ko) * 1990-11-30 1992-06-26 원본미기재 다층 상호접속선을 위한 알루미늄 적층 접점/통로 형성방법
JP2946978B2 (ja) * 1991-11-29 1999-09-13 ソニー株式会社 配線形成方法
US6051490A (en) * 1991-11-29 2000-04-18 Sony Corporation Method of forming wirings
EP0552893B1 (de) * 1992-01-21 1995-12-06 STMicroelectronics, Inc. Verfahren zur Herstellung eines Aluminiumkontakts
US6033534A (en) * 1992-05-20 2000-03-07 Siemens Aktiengesellschaft Method for producing an Al-containing layer with a planar surface on a substrate having hole structures with a high aspect ratio in the surface
DE69319993T2 (de) * 1992-09-22 1998-12-10 Sgs Thomson Microelectronics Methode zur Herstellung eines Metallkontaktes
US5358616A (en) * 1993-02-17 1994-10-25 Ward Michael G Filling of vias and contacts employing an aluminum-germanium alloy
US5360524A (en) * 1993-04-13 1994-11-01 Rudi Hendel Method for planarization of submicron vias and the manufacture of semiconductor integrated circuits
US5540821A (en) * 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5639357A (en) * 1994-05-12 1997-06-17 Applied Materials Synchronous modulation bias sputter method and apparatus for complete planarization of metal films
JPH08264487A (ja) * 1994-12-14 1996-10-11 Applied Materials Inc リエントリー形状コンタクト・ホールをコーティングまたは埋めるための堆積プロセス
US5766426A (en) * 1995-02-14 1998-06-16 Sputtered Films, Inc. Apparatus for, and method of, depositing a film on a substrate
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
US6238533B1 (en) 1995-08-07 2001-05-29 Applied Materials, Inc. Integrated PVD system for aluminum hole filling using ionized metal adhesion layer
US5807467A (en) * 1996-01-22 1998-09-15 Micron Technology, Inc. In situ preclean in a PVD chamber with a biased substrate configuration
US5741406A (en) * 1996-04-02 1998-04-21 Northerwestern University Solid oxide fuel cells having dense yttria-stabilized zirconia electrolyte films and method of depositing electrolyte films
EP0799903A3 (de) 1996-04-05 1999-11-17 Applied Materials, Inc. Verfahren zum Sputtern eines Metalls auf ein Substrat und Vorrichtung zur Behandlung von Halbleitern
US5997699A (en) * 1996-04-08 1999-12-07 Micron Technology Inc. Insitu faceting during deposition
US5827408A (en) * 1996-07-26 1998-10-27 Applied Materials, Inc Method and apparatus for improving the conformality of sputter deposited films
US6309971B1 (en) 1996-08-01 2001-10-30 Cypress Semiconductor Corporation Hot metallization process
KR100402941B1 (ko) * 1996-08-19 2004-03-18 주식회사 하이닉스반도체 반도체 소자의 금속층 형성방법
GB9619461D0 (en) * 1996-09-18 1996-10-30 Electrotech Ltd Method of processing a workpiece
US6156645A (en) * 1996-10-25 2000-12-05 Cypress Semiconductor Corporation Method of forming a metal layer on a substrate, including formation of wetting layer at a high temperature
US5873983A (en) * 1997-01-13 1999-02-23 Vanguard International Semiconductor Corporation Method for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
US6605197B1 (en) 1997-05-13 2003-08-12 Applied Materials, Inc. Method of sputtering copper to fill trenches and vias
US6176983B1 (en) * 1997-09-03 2001-01-23 Vlsi Technology, Inc. Methods of forming a semiconductor device
FR2769923B1 (fr) * 1997-10-17 2001-12-28 Cypress Semiconductor Corp Procede ameliore de metallisation a chaud
US6140228A (en) 1997-11-13 2000-10-31 Cypress Semiconductor Corporation Low temperature metallization process
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
WO1999027579A1 (en) 1997-11-26 1999-06-03 Applied Materials, Inc. Damage-free sculptured coating deposition
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US6169030B1 (en) * 1998-01-14 2001-01-02 Applied Materials, Inc. Metallization process and method
US6177350B1 (en) 1998-04-14 2001-01-23 Applied Materials, Inc. Method for forming a multilayered aluminum-comprising structure on a substrate
US6140236A (en) * 1998-04-21 2000-10-31 Kabushiki Kaisha Toshiba High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring
US6162332A (en) * 1998-05-07 2000-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing arcing in sputter chamber
US6187667B1 (en) 1998-06-17 2001-02-13 Cypress Semiconductor Corp. Method of forming metal layer(s) and/or antireflective coating layer(s) on an integrated circuit
US6638856B1 (en) 1998-09-11 2003-10-28 Cypress Semiconductor Corporation Method of depositing metal onto a substrate
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6556949B1 (en) * 1999-05-18 2003-04-29 Applied Materials, Inc. Semiconductor processing techniques
US6408220B1 (en) 1999-06-01 2002-06-18 Applied Materials, Inc. Semiconductor processing techniques
US6303395B1 (en) 1999-06-01 2001-10-16 Applied Materials, Inc. Semiconductor processing techniques
US6456894B1 (en) 1999-06-01 2002-09-24 Applied Materials, Inc. Semiconductor processing techniques
US7069101B1 (en) 1999-07-29 2006-06-27 Applied Materials, Inc. Computer integrated manufacturing techniques
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US6640151B1 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Multi-tool control system, method and medium
US6455427B1 (en) 1999-12-30 2002-09-24 Cypress Semiconductor Corp. Method for forming void-free metallization in an integrated circuit
US6969448B1 (en) 1999-12-30 2005-11-29 Cypress Semiconductor Corp. Method for forming a metallization structure in an integrated circuit
US6627056B2 (en) * 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6420263B1 (en) * 2000-02-28 2002-07-16 International Business Machines Corporation Method for controlling extrusions in aluminum metal lines and the device formed therefrom
US6952656B1 (en) 2000-04-28 2005-10-04 Applied Materials, Inc. Wafer fabrication data acquisition and management systems
US6708074B1 (en) 2000-08-11 2004-03-16 Applied Materials, Inc. Generic interface builder
US7188142B2 (en) * 2000-11-30 2007-03-06 Applied Materials, Inc. Dynamic subject information generation in message services of distributed object systems in a semiconductor assembly line facility
US20020128735A1 (en) * 2001-03-08 2002-09-12 Hawkins Parris C.M. Dynamic and extensible task guide
US20020138321A1 (en) * 2001-03-20 2002-09-26 Applied Materials, Inc. Fault tolerant and automated computer software workflow
US7047099B2 (en) 2001-06-19 2006-05-16 Applied Materials Inc. Integrating tool, module, and fab level control
US7160739B2 (en) * 2001-06-19 2007-01-09 Applied Materials, Inc. Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles
US7201936B2 (en) * 2001-06-19 2007-04-10 Applied Materials, Inc. Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7082345B2 (en) * 2001-06-19 2006-07-25 Applied Materials, Inc. Method, system and medium for process control for the matching of tools, chambers and/or other semiconductor-related entities
US6913938B2 (en) * 2001-06-19 2005-07-05 Applied Materials, Inc. Feedback control of plasma-enhanced chemical vapor deposition processes
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US6910947B2 (en) 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7698012B2 (en) 2001-06-19 2010-04-13 Applied Materials, Inc. Dynamic metrology schemes and sampling schemes for advanced process control in semiconductor processing
US7337019B2 (en) * 2001-07-16 2008-02-26 Applied Materials, Inc. Integration of fault detection with run-to-run control
US7225047B2 (en) * 2002-03-19 2007-05-29 Applied Materials, Inc. Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements
US20030199112A1 (en) * 2002-03-22 2003-10-23 Applied Materials, Inc. Copper wiring module control
EP1546828A1 (de) * 2002-08-01 2005-06-29 Applied Materials, Inc. Verfahren, system und medium zur handhabung nicht repräsentativer metrologiedaten mit einem erweiterten prozesssteuersystem
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7272459B2 (en) * 2002-11-15 2007-09-18 Applied Materials, Inc. Method, system and medium for controlling manufacture process having multivariate input parameters
US6794282B2 (en) * 2002-11-27 2004-09-21 Infineon Technologies Ag Three layer aluminum deposition process for high aspect ratio CL contacts
US7333871B2 (en) * 2003-01-21 2008-02-19 Applied Materials, Inc. Automated design and execution of experiments with integrated model creation for semiconductor manufacturing tools
DE10308968B4 (de) * 2003-02-28 2006-09-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer leitenden Barrierenschicht mit verbesserter Bedeckung innerhalb kritischer Öffnungen
US7205228B2 (en) * 2003-06-03 2007-04-17 Applied Materials, Inc. Selective metal encapsulation schemes
US20050014299A1 (en) * 2003-07-15 2005-01-20 Applied Materials, Inc. Control of metal resistance in semiconductor products via integrated metrology
US7354332B2 (en) * 2003-08-04 2008-04-08 Applied Materials, Inc. Technique for process-qualifying a semiconductor manufacturing tool using metrology data
US7356377B2 (en) * 2004-01-29 2008-04-08 Applied Materials, Inc. System, method, and medium for monitoring performance of an advanced process control system
US20080264340A1 (en) * 2004-04-12 2008-10-30 Novellus Systems, Inc. Moving interleaved sputter chamber shields
US6961626B1 (en) 2004-05-28 2005-11-01 Applied Materials, Inc Dynamic offset and feedback threshold
US7096085B2 (en) * 2004-05-28 2006-08-22 Applied Materials Process control by distinguishing a white noise component of a process variance
US7378002B2 (en) * 2005-08-23 2008-05-27 Applied Materials, Inc. Aluminum sputtering while biasing wafer
US8156892B2 (en) * 2008-05-19 2012-04-17 Novellus Systems, Inc. Edge profiling for process chamber shields
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
US20110217465A1 (en) * 2010-03-08 2011-09-08 Novellus Systems Inc. Shields for substrate processing systems
US10276412B2 (en) 2010-07-27 2019-04-30 Tel Solar Ag Heating arrangement and method for heating substrates
US20140120711A1 (en) * 2012-10-26 2014-05-01 United Microelectronics Corp. Method of forming metal gate
US10354871B2 (en) * 2017-09-11 2019-07-16 General Electric Company Sputtering system and method for forming a metal layer on a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4495221A (en) * 1982-10-26 1985-01-22 Signetics Corporation Variable rate semiconductor deposition process
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
KR900005785B1 (ko) * 1985-05-13 1990-08-11 닛뽄덴신덴와 가부시끼가이샤 평탄성 박막의 제조방법
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
JPS6411966A (en) * 1987-07-02 1989-01-17 Fujitsu Ltd High-temperature sputtering method

Also Published As

Publication number Publication date
DE69123870T2 (de) 1997-05-22
EP0451571A2 (de) 1991-10-16
US5108570A (en) 1992-04-28
KR100227236B1 (ko) 1999-11-01
ES2098279T3 (es) 1997-05-01
EP0451571B1 (de) 1997-01-02
EP0451571A3 (en) 1992-07-22

Similar Documents

Publication Publication Date Title
DE69123870T2 (de) Sputterverfahren zum Bilden von einer Aluminiumschicht auf einen gestuften Wafer
DE69200771D1 (de) Verfahren zum Bilden einer gemusterten Oberfläche auf einem Substrat.
DE3852348D1 (de) Gegenstand zum Schützen eines Substrats.
DE69211175D1 (de) Sputterverfahren zum Bilden einer Aluminiumschicht auf einem gestuften Wafer
DE3788155D1 (de) Verfahren zum Entfernen von überschüssigem Material auf einer Halbleiterscheibe.
DE59007942D1 (de) Vorrichtung zum Beschichten von Substraten.
DE3751333T2 (de) Verfahren zum Entfernen von Photoresists auf Halbleitersubstraten.
DE69123802T2 (de) Verfahren zum Auftragen einer Dünnschicht auf ein Substrat durch Sputtern
DE68918150D1 (de) Verfahren zum Aufwachsen einer Galliumarsenid-Schicht auf einem Silizium-Substrat.
DE69125333T2 (de) Herstellen von Metallmustern auf einem Substrat
DE3280233D1 (de) Verfahren zum herstellen eines substrats fuer multischichtschaltung.
DE2967291D1 (en) Process for the deposition of a thin-film pattern on a substrate
DE69104568D1 (de) Verfahren zum Aufbringen abriebfester Schichten auf Schaufeloberflächen.
BE850314A (fr) Procede de revetement d'un substrat de verre
DE3889024D1 (de) Verfahren zum Herstellen einer supraleitenden Dünnschicht.
DE68914061D1 (de) Verfahren zum Niederschlagen einer Wolframschicht.
ATE12844T1 (de) Verfahren zum auftragen einer licht-durchlaessigen schutzschicht auf ein, auf einem substrat- geformtes, tonerbild.
DE69123807T2 (de) Verfahren zum Verbessern der Eigenschaften einer Dünnschicht auf einem Substrat
DE69114371T2 (de) Verfahren zum Gasphasenabscheiden.
DE3576098D1 (de) Verfahren zum selektiven absetzen metallischer schichten auf einem substrat.
DE3486406D1 (de) Verfahren zum Überziehen von Substraten mit einem Überzugsfilm.
DE69016633T2 (de) CVD-Anlage und Verfahren zum Bilden einer Dünnschicht.
DE68923394T2 (de) Verfahren zum Bestimmen einer Bildnummer.
FR2680497B1 (fr) Procede et machine pour recouvrir un substrat.
DE3886429T2 (de) Verfahren zum Herstellen einer supraleitenden Dünnschicht.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee