DE69120377T2 - Plasmaätzgerät - Google Patents

Plasmaätzgerät

Info

Publication number
DE69120377T2
DE69120377T2 DE69120377T DE69120377T DE69120377T2 DE 69120377 T2 DE69120377 T2 DE 69120377T2 DE 69120377 T DE69120377 T DE 69120377T DE 69120377 T DE69120377 T DE 69120377T DE 69120377 T2 DE69120377 T2 DE 69120377T2
Authority
DE
Germany
Prior art keywords
plasma etcher
etcher
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69120377T
Other languages
English (en)
Other versions
DE69120377D1 (de
Inventor
Toshihisa Nozawa
Junichi Arami
Keiji Horioka
Isahiro Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Electron Ltd filed Critical Toshiba Corp
Publication of DE69120377D1 publication Critical patent/DE69120377D1/de
Application granted granted Critical
Publication of DE69120377T2 publication Critical patent/DE69120377T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
DE69120377T 1990-11-28 1991-11-28 Plasmaätzgerät Expired - Fee Related DE69120377T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2331317A JPH04196528A (ja) 1990-11-28 1990-11-28 マグネトロンエッチング装置

Publications (2)

Publication Number Publication Date
DE69120377D1 DE69120377D1 (de) 1996-07-25
DE69120377T2 true DE69120377T2 (de) 1996-11-28

Family

ID=18242336

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69120377T Expired - Fee Related DE69120377T2 (de) 1990-11-28 1991-11-28 Plasmaätzgerät

Country Status (5)

Country Link
US (1) US5290381A (de)
EP (1) EP0488307B1 (de)
JP (1) JPH04196528A (de)
KR (1) KR100239389B1 (de)
DE (1) DE69120377T2 (de)

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US5427670A (en) * 1992-12-10 1995-06-27 U.S. Philips Corporation Device for the treatment of substrates at low temperature
KR960006958B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알 장비
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US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
TW262566B (de) * 1993-07-02 1995-11-11 Tokyo Electron Co Ltd
TW277139B (de) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5676205A (en) * 1993-10-29 1997-10-14 Applied Materials, Inc. Quasi-infinite heat source/sink
US5554224A (en) * 1994-03-31 1996-09-10 Foltyn; Steve R. Substrate heater for thin film deposition
US5738751A (en) * 1994-09-01 1998-04-14 Applied Materials, Inc. Substrate support having improved heat transfer
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control
US20050236109A1 (en) * 1995-03-16 2005-10-27 Toshio Masuda Plasma etching apparatus and plasma etching method
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3585578B2 (ja) * 1995-05-30 2004-11-04 アネルバ株式会社 プラズマ処理装置
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US6093456A (en) * 1995-06-07 2000-07-25 Applied Materials, Inc. Beam stop apparatus for an ion implanter
JPH098012A (ja) * 1995-06-21 1997-01-10 Sony Corp 半導体製造用エッチング装置
GB9515090D0 (en) * 1995-07-21 1995-09-20 Applied Materials Inc An ion beam apparatus
AU6962196A (en) * 1995-09-01 1997-03-27 Advanced Semiconductor Materials America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5796074A (en) * 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US5881208A (en) * 1995-12-20 1999-03-09 Sematech, Inc. Heater and temperature sensor array for rapid thermal processing thermal core
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
US5711851A (en) 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
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JP4151749B2 (ja) * 1998-07-16 2008-09-17 東京エレクトロンＡｔ株式会社 プラズマ処理装置およびその方法
US6402844B1 (en) * 1998-09-08 2002-06-11 Tokyo Electron Limited Substrate processing method and substrate processing unit
KR100404778B1 (ko) * 1998-10-29 2003-11-07 동경 엘렉트론 주식회사 진공 처리 장치
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
US6421655B1 (en) * 1999-06-04 2002-07-16 Microsoft Corporation Computer-based representations and reasoning methods for engaging users in goal-oriented conversations
JP2001068538A (ja) 1999-06-21 2001-03-16 Tokyo Electron Ltd 電極構造、載置台構造、プラズマ処理装置及び処理装置
US6373679B1 (en) 1999-07-02 2002-04-16 Cypress Semiconductor Corp. Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
US6406545B2 (en) 1999-07-27 2002-06-18 Kabushiki Kaisha Toshiba Semiconductor workpiece processing apparatus and method
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
KR100330749B1 (ko) * 1999-12-17 2002-04-03 서성기 반도체 박막증착장치
US20010035403A1 (en) 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
DE10104613A1 (de) * 2001-02-02 2002-08-22 Bosch Gmbh Robert Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung
JP2002237486A (ja) * 2001-02-08 2002-08-23 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
AU2002240261A1 (en) * 2001-03-02 2002-09-19 Tokyo Electron Limited Method and apparatus for active temperature control of susceptors
US20050211385A1 (en) * 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
JP4549022B2 (ja) * 2001-04-30 2010-09-22 ラム リサーチ コーポレイション ワーク支持体の表面を横切る空間温度分布を制御する方法および装置
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US6838646B2 (en) * 2002-08-22 2005-01-04 Sumitomo Osaka Cement Co., Ltd. Susceptor device
TW587139B (en) * 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7196535B2 (en) * 2004-04-26 2007-03-27 Intel Corporation Thermal control system for environmental test chamber
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
JP5274918B2 (ja) * 2008-07-07 2013-08-28 東京エレクトロン株式会社 プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置
JP5705133B2 (ja) * 2009-02-04 2015-04-22 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 静電チャックシステムおよび基板表面に亘って温度プロファイルを半径方向に調整するための方法
JP5382744B2 (ja) * 2009-06-24 2014-01-08 キヤノンアネルバ株式会社 真空加熱冷却装置および磁気抵抗素子の製造方法
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
JP6140457B2 (ja) * 2013-01-21 2017-05-31 東京エレクトロン株式会社 接着方法、載置台及び基板処理装置
KR20160054153A (ko) * 2014-11-05 2016-05-16 삼성전자주식회사 레이저 어닐링 장비
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6875417B2 (ja) * 2016-04-08 2021-05-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 真空チャック圧力制御システム
US11004711B2 (en) * 2018-08-17 2021-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Automated wafer monitoring
KR102572570B1 (ko) * 2021-07-02 2023-08-29 광운대학교 산학협력단 멀티존 열전달 구조물을 이용한 기판 처리 장치 및 온도 제어 방법

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Also Published As

Publication number Publication date
EP0488307B1 (de) 1996-06-19
KR920010778A (ko) 1992-06-27
KR100239389B1 (ko) 2000-01-15
EP0488307A2 (de) 1992-06-03
DE69120377D1 (de) 1996-07-25
US5290381A (en) 1994-03-01
JPH04196528A (ja) 1992-07-16
EP0488307A3 (en) 1992-11-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee