DE69119382D1 - Halbleiteranordnung mit einem bipolaren Hochgeschwindigkeits-Schalttransistor - Google Patents

Halbleiteranordnung mit einem bipolaren Hochgeschwindigkeits-Schalttransistor

Info

Publication number
DE69119382D1
DE69119382D1 DE69119382T DE69119382T DE69119382D1 DE 69119382 D1 DE69119382 D1 DE 69119382D1 DE 69119382 T DE69119382 T DE 69119382T DE 69119382 T DE69119382 T DE 69119382T DE 69119382 D1 DE69119382 D1 DE 69119382D1
Authority
DE
Germany
Prior art keywords
semiconductor device
switching transistor
speed switching
bipolar high
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69119382T
Other languages
English (en)
Other versions
DE69119382T2 (de
Inventor
Hisao Shigekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69119382D1 publication Critical patent/DE69119382D1/de
Publication of DE69119382T2 publication Critical patent/DE69119382T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
DE69119382T 1990-12-28 1991-12-20 Halbleiteranordnung mit einem bipolaren Hochgeschwindigkeits-Schalttransistor Expired - Fee Related DE69119382T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02408533A JP3074736B2 (ja) 1990-12-28 1990-12-28 半導体装置

Publications (2)

Publication Number Publication Date
DE69119382D1 true DE69119382D1 (de) 1996-06-13
DE69119382T2 DE69119382T2 (de) 1996-09-12

Family

ID=18517975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69119382T Expired - Fee Related DE69119382T2 (de) 1990-12-28 1991-12-20 Halbleiteranordnung mit einem bipolaren Hochgeschwindigkeits-Schalttransistor

Country Status (4)

Country Link
US (2) US5349230A (de)
EP (1) EP0492558B1 (de)
JP (1) JP3074736B2 (de)
DE (1) DE69119382T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置
JPH05152574A (ja) * 1991-11-29 1993-06-18 Fuji Electric Co Ltd 半導体装置
DE4236557C2 (de) * 1992-10-29 2002-08-01 Semikron Elektronik Gmbh Leistungs- Halbleiterbauelement
DE4244272A1 (de) * 1992-12-28 1994-06-30 Daimler Benz Ag Feldeffektgesteuertes Halbleiterbauelement
US5838057A (en) * 1994-08-03 1998-11-17 Texas Instruments Incorporated Transistor switches
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
KR970054363A (ko) * 1995-12-30 1997-07-31 김광호 다이오드를 내장한 절연게이트 바이폴라 트랜지스터 및 그 제조방법
US5825079A (en) * 1997-01-23 1998-10-20 Luminous Intent, Inc. Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage
JP3494023B2 (ja) * 1998-07-28 2004-02-03 株式会社日立製作所 半導体装置および半導体装置の駆動方法並びに電力変換装置
US6420757B1 (en) 1999-09-14 2002-07-16 Vram Technologies, Llc Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability
US6433370B1 (en) 2000-02-10 2002-08-13 Vram Technologies, Llc Method and apparatus for cylindrical semiconductor diodes
DE10022268B4 (de) 2000-05-08 2005-03-31 Infineon Technologies Ag Halbleiterbauelement mit zwei Halbleiterkörpern in einem gemeinsamen Gehäuse
JP2001345388A (ja) * 2000-05-31 2001-12-14 Hitachi Electronics Eng Co Ltd ダイオード素子回路およびこれを利用したスイッチ回路
US6580150B1 (en) 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6537921B2 (en) 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
JP2003023769A (ja) * 2001-07-06 2003-01-24 Sansha Electric Mfg Co Ltd 電力用半導体モジュール
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US6919603B2 (en) * 2003-04-30 2005-07-19 Texas Instruments Incorporated Efficient protection structure for reverse pin-to-pin electrostatic discharge
JP2005026392A (ja) * 2003-07-01 2005-01-27 Renesas Technology Corp 半導体装置および半導体装置の製造方法
US7280769B2 (en) * 2003-07-28 2007-10-09 Emerson Electric Co. Method and apparatus for operating an optical receiver for low intensity optical communication in a high speed mode
DE102004007991B4 (de) * 2004-02-18 2015-07-30 Infineon Technologies Ag Halbleiter-Schaltelement
JP4899301B2 (ja) * 2004-09-17 2012-03-21 富士電機株式会社 半導体装置
KR101194040B1 (ko) * 2005-11-22 2012-10-24 페어차일드코리아반도체 주식회사 트랜지스터에 프리휠링 다이오드가 구현된 고집적회로
JP5444758B2 (ja) * 2009-02-27 2014-03-19 日産自動車株式会社 半導体装置
JP2014158356A (ja) * 2013-02-15 2014-08-28 Toshiba Lighting & Technology Corp 整流回路
JP6276560B2 (ja) * 2013-11-01 2018-02-07 一般財団法人電力中央研究所 バイポーラ半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2508703A1 (fr) * 1981-06-30 1982-12-31 Commissariat Energie Atomique Diode zener compensee en temperature et stable sous irradiation et procede de fabrication d'une telle diode
JPS5974728A (ja) * 1982-10-22 1984-04-27 Fuji Electric Co Ltd トランジスタの過電圧保護回路
JPS59189679A (ja) * 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
JPS6197862A (ja) * 1984-10-18 1986-05-16 Nec Kansai Ltd 半導体装置
JPS61180472A (ja) * 1985-02-05 1986-08-13 Mitsubishi Electric Corp 半導体装置
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
US4811065A (en) * 1987-06-11 1989-03-07 Siliconix Incorporated Power DMOS transistor with high speed body diode
JPH02184054A (ja) * 1989-01-11 1990-07-18 Toshiba Corp ハイブリッド型樹脂封止半導体装置
JP2658427B2 (ja) * 1989-01-17 1997-09-30 富士電機株式会社 電力変換用半導体素子のスナバ回路とそのモジュール装置
JPH0671061B2 (ja) * 1989-05-22 1994-09-07 株式会社東芝 樹脂封止型半導体装置
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
JP2590284B2 (ja) * 1990-02-28 1997-03-12 株式会社日立製作所 半導体装置及びその製造方法
JP3074736B2 (ja) * 1990-12-28 2000-08-07 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
JPH04233232A (ja) 1992-08-21
DE69119382T2 (de) 1996-09-12
EP0492558B1 (de) 1996-05-08
JP3074736B2 (ja) 2000-08-07
US5469103A (en) 1995-11-21
US5349230A (en) 1994-09-20
EP0492558A3 (en) 1993-04-21
EP0492558A2 (de) 1992-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee