DE69117785T2 - Dünnschicht-Halbleiterbauelement - Google Patents
Dünnschicht-HalbleiterbauelementInfo
- Publication number
- DE69117785T2 DE69117785T2 DE69117785T DE69117785T DE69117785T2 DE 69117785 T2 DE69117785 T2 DE 69117785T2 DE 69117785 T DE69117785 T DE 69117785T DE 69117785 T DE69117785 T DE 69117785T DE 69117785 T2 DE69117785 T2 DE 69117785T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- film semiconductor
- semiconductor device
- layer
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 239000011241 protective layer Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2078403A JPH03278437A (ja) | 1990-03-27 | 1990-03-27 | 薄膜半導体装置及びその製造方法 |
JP2078406A JPH03278477A (ja) | 1990-03-27 | 1990-03-27 | 薄膜半導体装置及びこの薄膜半導体装置を用いた光電変換装置 |
JP2078404A JPH03278467A (ja) | 1990-03-27 | 1990-03-27 | 薄膜半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69117785D1 DE69117785D1 (de) | 1996-04-18 |
DE69117785T2 true DE69117785T2 (de) | 1997-02-06 |
Family
ID=27302704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69117785T Expired - Fee Related DE69117785T2 (de) | 1990-03-27 | 1991-03-26 | Dünnschicht-Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (2) | US5576555A (de) |
EP (1) | EP0449598B1 (de) |
AT (1) | ATE135496T1 (de) |
DE (1) | DE69117785T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
KR0145900B1 (ko) * | 1995-02-11 | 1998-09-15 | 김광호 | 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법 |
JPH09270519A (ja) * | 1996-03-31 | 1997-10-14 | Furontetsuku:Kk | 薄膜トランジスタの製造方法 |
US6010923A (en) * | 1997-03-31 | 2000-01-04 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region |
US5834356A (en) * | 1997-06-27 | 1998-11-10 | Vlsi Technology, Inc. | Method of making high resistive structures in salicided process semiconductor devices |
TW400554B (en) * | 1997-07-25 | 2000-08-01 | United Microelectronics Corp | The removing method for the thin film layer involved in the semiconductor device |
US6166417A (en) | 1998-06-30 | 2000-12-26 | Intel Corporation | Complementary metal gates and a process for implementation |
US6130123A (en) | 1998-06-30 | 2000-10-10 | Intel Corporation | Method for making a complementary metal gate electrode technology |
EP1118126B1 (de) * | 1999-08-02 | 2009-02-25 | Casio Computer Co., Ltd. | Photosensor und photosensorsystem |
KR100776514B1 (ko) * | 2000-12-30 | 2007-11-16 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
JP3990167B2 (ja) * | 2002-03-04 | 2007-10-10 | Nec液晶テクノロジー株式会社 | 液晶表示装置の駆動方法およびその駆動方法を用いた液晶表示装置 |
JP4378137B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム |
JP5157161B2 (ja) * | 2006-12-27 | 2013-03-06 | カシオ計算機株式会社 | フォトセンサ |
US7863112B2 (en) * | 2008-01-08 | 2011-01-04 | International Business Machines Corporation | Method and structure to protect FETs from plasma damage during FEOL processing |
JP5615605B2 (ja) * | 2010-07-05 | 2014-10-29 | 三菱電機株式会社 | Ffsモード液晶装置 |
US8679905B2 (en) * | 2011-06-08 | 2014-03-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
US9035932B2 (en) * | 2012-08-31 | 2015-05-19 | Apple Inc. | Thermally compensated pixels for liquid crystal displays (LCDS) |
US9201112B2 (en) | 2013-12-09 | 2015-12-01 | International Business Machines Corporation | Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961964A (ja) * | 1982-10-01 | 1984-04-09 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPS60101940A (ja) * | 1983-11-07 | 1985-06-06 | Ricoh Co Ltd | イメ−ジセンサ |
JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
JPS639157A (ja) * | 1986-06-30 | 1988-01-14 | Canon Inc | 薄膜トランジスタの製造方法 |
US5306648A (en) * | 1986-01-24 | 1994-04-26 | Canon Kabushiki Kaisha | Method of making photoelectric conversion device |
US4843265A (en) * | 1986-02-10 | 1989-06-27 | Dallas Semiconductor Corporation | Temperature compensated monolithic delay circuit |
JPS62253785A (ja) * | 1986-04-28 | 1987-11-05 | Tokyo Univ | 間欠的エツチング方法 |
US5308996A (en) * | 1986-09-25 | 1994-05-03 | Canon Kabushiki Kaisha | TFT device |
JP2702131B2 (ja) * | 1987-06-12 | 1998-01-21 | キヤノン株式会社 | 画像読取装置及び該装置を有する画像情報読取装置 |
JPH01137674A (ja) * | 1987-11-25 | 1989-05-30 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ |
JPH01302769A (ja) * | 1988-05-30 | 1989-12-06 | Seikosha Co Ltd | 逆スタガー型シリコン薄膜トランジスタの製造方法 |
GB2220792B (en) * | 1988-07-13 | 1991-12-18 | Seikosha Kk | Silicon thin film transistor and method for producing the same |
JPH0816756B2 (ja) * | 1988-08-10 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
US5202572A (en) * | 1988-09-21 | 1993-04-13 | Fuji Xerox Co., Ltd. | Thin film transistor |
US4874459A (en) * | 1988-10-17 | 1989-10-17 | The Regents Of The University Of California | Low damage-producing, anisotropic, chemically enhanced etching method and apparatus |
DE68921567T2 (de) * | 1988-11-30 | 1995-07-06 | Nec Corp | Flüssigkristallanzeigetafel mit verminderten Pixeldefekten. |
ATE143175T1 (de) * | 1990-03-27 | 1996-10-15 | Canon Kk | Dünnschicht-halbleiterbauelement |
US5198694A (en) * | 1990-10-05 | 1993-03-30 | General Electric Company | Thin film transistor structure with improved source/drain contacts |
-
1991
- 1991-03-26 EP EP91302658A patent/EP0449598B1/de not_active Expired - Lifetime
- 1991-03-26 DE DE69117785T patent/DE69117785T2/de not_active Expired - Fee Related
- 1991-03-26 AT AT91302658T patent/ATE135496T1/de not_active IP Right Cessation
-
1995
- 1995-05-26 US US08/451,968 patent/US5576555A/en not_active Expired - Lifetime
- 1995-06-07 US US08/476,026 patent/US5705411A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0449598A2 (de) | 1991-10-02 |
US5705411A (en) | 1998-01-06 |
EP0449598A3 (en) | 1992-01-08 |
US5576555A (en) | 1996-11-19 |
DE69117785D1 (de) | 1996-04-18 |
ATE135496T1 (de) | 1996-03-15 |
EP0449598B1 (de) | 1996-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |