DE69117503T2 - Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung - Google Patents

Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Info

Publication number
DE69117503T2
DE69117503T2 DE69117503T DE69117503T DE69117503T2 DE 69117503 T2 DE69117503 T2 DE 69117503T2 DE 69117503 T DE69117503 T DE 69117503T DE 69117503 T DE69117503 T DE 69117503T DE 69117503 T2 DE69117503 T2 DE 69117503T2
Authority
DE
Germany
Prior art keywords
inverse
production
field effect
effect transistor
superconducting field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117503T
Other languages
English (en)
Other versions
DE69117503D1 (de
Inventor
Johannes Georg Dr Bednorz
Jochen Dr Mannhart
Carl Alexander Prof Dr Mueller
Darrell Dr Schlom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69117503D1 publication Critical patent/DE69117503D1/de
Application granted granted Critical
Publication of DE69117503T2 publication Critical patent/DE69117503T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
DE69117503T 1991-07-19 1991-07-19 Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung Expired - Fee Related DE69117503T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91112106A EP0523275B1 (de) 1991-07-19 1991-07-19 Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE69117503D1 DE69117503D1 (de) 1996-04-04
DE69117503T2 true DE69117503T2 (de) 1996-09-19

Family

ID=8206955

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117503T Expired - Fee Related DE69117503T2 (de) 1991-07-19 1991-07-19 Verbesserter supraleitender Feldeffekt-Transistor mit inverser MISFET-Struktur und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US5240906A (de)
EP (1) EP0523275B1 (de)
JP (1) JP2662145B2 (de)
DE (1) DE69117503T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG46182A1 (en) * 1991-01-07 1998-02-20 Ibm Superconducting field-effect transistors with inverted misfet structure and method for making the same
JP2822773B2 (ja) * 1992-04-28 1998-11-11 住友電気工業株式会社 超電導インタフェース回路
US5594257A (en) * 1992-06-24 1997-01-14 Sumitomo Electric Industries, Ltd. Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same
US6052271A (en) 1994-01-13 2000-04-18 Rohm Co., Ltd. Ferroelectric capacitor including an iridium oxide layer in the lower electrode
KR0148598B1 (ko) * 1994-11-21 1998-10-15 정선종 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법
KR0148596B1 (ko) * 1994-11-28 1998-10-15 양승택 결정 입계 채널을 갖는 초전도 전계효과 소자와 그 제조방법
US5830270A (en) * 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
US6815744B1 (en) * 1999-02-17 2004-11-09 International Business Machines Corporation Microelectronic device for storing information with switchable ohmic resistance
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US8204564B2 (en) * 2007-11-07 2012-06-19 Brookhaven Science Associates, Llc High temperature interfacial superconductivity
US9299799B2 (en) 2014-06-10 2016-03-29 International Business Machines Corporation Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
WO2021211197A1 (en) * 2020-04-13 2021-10-21 University Of Pittsburgh - Of The Commonwealth System Of Higher Education Low- voltage electron beam control of conductive state at a complex-oxide interface
IT202100027515A1 (it) 2021-10-27 2023-04-27 Consiglio Nazionale Ricerche Superconducting variable inductance transistor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH069262B2 (ja) * 1984-09-21 1994-02-02 株式会社日立製作所 超電導デバイス
CA1229426A (en) * 1984-04-19 1987-11-17 Yutaka Harada Superconducting device
CA1329952C (en) * 1987-04-27 1994-05-31 Yoshihiko Imanaka Multi-layer superconducting circuit substrate and process for manufacturing same
JPS6424476A (en) * 1987-07-20 1989-01-26 Sharp Kk Superconducting device
AU610260B2 (en) * 1987-10-16 1991-05-16 Furukawa Electric Co. Ltd., The Oxide superconductor shaped body and method of manufacturing the same
US5015620A (en) * 1987-11-06 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce High-Tc superconductor contact unit having low interface resistivity, and method of making
JPH01171247A (ja) * 1987-12-25 1989-07-06 Mitsubishi Metal Corp 超伝導体配線の構造
EP0324044B1 (de) * 1988-01-15 1992-11-25 International Business Machines Corporation Feldeffektanordnung mit supraleitendem Kanal
JP3011411B2 (ja) * 1988-05-25 2000-02-21 株式会社東芝 超電導素子
JP2862137B2 (ja) * 1988-08-11 1999-02-24 古河電気工業株式会社 超電導トランジスタ
JP3020524B2 (ja) * 1988-11-28 2000-03-15 株式会社日立製作所 酸化物超電導素子
US5135908A (en) * 1989-08-07 1992-08-04 The Trustees Of Columbia University In The City Of New York Method of patterning superconducting films
DE69127070T2 (de) * 1991-05-01 1998-02-12 Ibm Supraleitende Schaltkreis-Bauelemente mit metallischem Substrat und deren Herstellungsverfahren

Also Published As

Publication number Publication date
US5240906A (en) 1993-08-31
EP0523275A1 (de) 1993-01-20
DE69117503D1 (de) 1996-04-04
JPH05160455A (ja) 1993-06-25
EP0523275B1 (de) 1996-02-28
JP2662145B2 (ja) 1997-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee