DE69116938T2 - Verfahren zum Herstellen einer Halbleiteranordnung - Google Patents

Verfahren zum Herstellen einer Halbleiteranordnung

Info

Publication number
DE69116938T2
DE69116938T2 DE69116938T DE69116938T DE69116938T2 DE 69116938 T2 DE69116938 T2 DE 69116938T2 DE 69116938 T DE69116938 T DE 69116938T DE 69116938 T DE69116938 T DE 69116938T DE 69116938 T2 DE69116938 T2 DE 69116938T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116938T
Other languages
English (en)
Other versions
DE69116938D1 (de
Inventor
Colin Michael Rowe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69116938D1 publication Critical patent/DE69116938D1/de
Publication of DE69116938T2 publication Critical patent/DE69116938T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3178Coating or filling in grooves made in the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/137Resists
DE69116938T 1990-06-20 1991-06-13 Verfahren zum Herstellen einer Halbleiteranordnung Expired - Fee Related DE69116938T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9013787A GB2245420A (en) 1990-06-20 1990-06-20 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
DE69116938D1 DE69116938D1 (de) 1996-03-21
DE69116938T2 true DE69116938T2 (de) 1996-09-19

Family

ID=10677940

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116938T Expired - Fee Related DE69116938T2 (de) 1990-06-20 1991-06-13 Verfahren zum Herstellen einer Halbleiteranordnung

Country Status (6)

Country Link
US (1) US5093283A (de)
EP (1) EP0463669B1 (de)
JP (1) JPH0715896B2 (de)
KR (1) KR920001755A (de)
DE (1) DE69116938T2 (de)
GB (1) GB2245420A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
KR0172237B1 (ko) * 1995-06-26 1999-03-30 김주용 반도체 소자의 미세패턴 형성방법
US11764110B2 (en) * 2020-04-29 2023-09-19 Semiconductor Components Industries, Llc Moat coverage with dielectric film for device passivation and singulation
US20230065066A1 (en) * 2021-08-30 2023-03-02 Polar Semiconductor, Llc Transistor with single termination trench having depth more than 10 microns

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3578515A (en) * 1967-04-05 1971-05-11 Texas Instruments Inc Process for fabricating planar diodes in semi-insulating substrates
US3639186A (en) * 1969-02-24 1972-02-01 Ibm Process for the production of finely etched patterns
US3808069A (en) * 1972-03-15 1974-04-30 Bell Telephone Labor Inc Forming windows in composite dielectric layers
DE2724348A1 (de) * 1976-06-08 1977-12-22 Itt Ind Gmbh Deutsche Glaspassiviertes halbleiterbauelement und verfahren zur herstellung
FR2466859A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de sillonnage et de glassivation par masquage au nitrure de silicium et composants semi-conducteurs obtenus
US4354896A (en) * 1980-08-05 1982-10-19 Texas Instruments Incorporated Formation of submicron substrate element
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4497684A (en) * 1983-02-22 1985-02-05 Amdahl Corporation Lift-off process for depositing metal on a substrate
JPS6281727A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd 埋込型素子分離溝の形成方法
JPS6284520A (ja) * 1985-10-07 1987-04-18 Sharp Corp 絶縁膜への開孔形成方法
GB2206443A (en) * 1987-06-08 1989-01-05 Philips Electronic Associated A method of manufacturing a semiconductor device
GB2206540B (en) * 1987-06-30 1991-03-27 British Aerospace Aperture forming method
JPH0279437A (ja) * 1988-09-14 1990-03-20 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR920001755A (ko) 1992-01-30
JPH0715896B2 (ja) 1995-02-22
JPH04230031A (ja) 1992-08-19
US5093283A (en) 1992-03-03
DE69116938D1 (de) 1996-03-21
EP0463669B1 (de) 1996-02-07
EP0463669A2 (de) 1992-01-02
GB9013787D0 (en) 1990-08-08
GB2245420A (en) 1992-01-02
EP0463669A3 (en) 1992-08-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee