DE69113141D1 - Laser mit vertikalem Resonator und Spiegel mit steuerbarer Reflektivität. - Google Patents

Laser mit vertikalem Resonator und Spiegel mit steuerbarer Reflektivität.

Info

Publication number
DE69113141D1
DE69113141D1 DE69113141T DE69113141T DE69113141D1 DE 69113141 D1 DE69113141 D1 DE 69113141D1 DE 69113141 T DE69113141 T DE 69113141T DE 69113141 T DE69113141 T DE 69113141T DE 69113141 D1 DE69113141 D1 DE 69113141D1
Authority
DE
Germany
Prior art keywords
mirror
laser
vertical resonator
controllable reflectivity
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69113141T
Other languages
English (en)
Other versions
DE69113141T2 (de
Inventor
Philip J Anthony
Leo M F Chirosvky
Asaro L A D
Vincent D Mattera
Robert Anthony Morgan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69113141D1 publication Critical patent/DE69113141D1/de
Publication of DE69113141T2 publication Critical patent/DE69113141T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
DE69113141T 1990-07-05 1991-06-28 Laser mit vertikalem Resonator und Spiegel mit steuerbarer Reflektivität. Expired - Fee Related DE69113141T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/548,033 US5056098A (en) 1990-07-05 1990-07-05 Vertical cavity laser with mirror having controllable reflectivity

Publications (2)

Publication Number Publication Date
DE69113141D1 true DE69113141D1 (de) 1995-10-26
DE69113141T2 DE69113141T2 (de) 1996-05-09

Family

ID=24187135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113141T Expired - Fee Related DE69113141T2 (de) 1990-07-05 1991-06-28 Laser mit vertikalem Resonator und Spiegel mit steuerbarer Reflektivität.

Country Status (4)

Country Link
US (1) US5056098A (de)
EP (1) EP0465145B1 (de)
JP (1) JP2545165B2 (de)
DE (1) DE69113141T2 (de)

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JPH04107976A (ja) * 1990-08-28 1992-04-09 Mitsubishi Electric Corp 半導体レーザ装置
US5365541A (en) * 1992-01-29 1994-11-15 Trw Inc. Mirror with photonic band structure
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
JPH06291406A (ja) * 1993-03-31 1994-10-18 Fujitsu Ltd 面発光半導体レーザ
US5574738A (en) * 1995-06-07 1996-11-12 Honeywell Inc. Multi-gigahertz frequency-modulated vertical-cavity surface emitting laser
JPH0964334A (ja) * 1995-08-28 1997-03-07 Toshiba Corp 発光素子と外部変調器の集積素子
US5978401A (en) * 1995-10-25 1999-11-02 Honeywell Inc. Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US5757837A (en) * 1996-10-16 1998-05-26 The Regents Of The University Of California Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
US5774487A (en) * 1996-10-16 1998-06-30 Honeywell Inc. Filamented multi-wavelength vertical-cavity surface emitting laser
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
US6341138B1 (en) 1999-06-16 2002-01-22 Gore Enterprise Holdings, Inc. Constant temperature performance laser
FR2805902B1 (fr) * 2000-03-03 2002-05-10 Centre Nat Rech Scient Dispositif optoelectronique semiconducteur a fonction de transfert modulable electriquement
US7065124B2 (en) 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
US6782027B2 (en) 2000-12-29 2004-08-24 Finisar Corporation Resonant reflector for use with optoelectronic devices
US6727520B2 (en) 2000-12-29 2004-04-27 Honeywell International Inc. Spatially modulated reflector for an optoelectronic device
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
DE10102458A1 (de) * 2001-01-15 2002-07-25 Infineon Technologies Ag Vertikallaserdiode mit ausbleichbarem Absorbermittel
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
US6816526B2 (en) * 2001-12-28 2004-11-09 Finisar Corporation Gain guide implant in oxide vertical cavity surface emitting laser
US6965626B2 (en) 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US7210857B2 (en) 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US6887801B2 (en) 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
EP2525450B1 (de) 2011-05-17 2017-10-04 Danmarks Tekniske Universitet Gitterspiegel mit Modulation der Reflektivität
DK2729997T3 (en) 2011-07-04 2016-01-25 Univ Danmarks Tekniske Laser devices
US9557556B2 (en) 2013-03-18 2017-01-31 Si-Ware Systems Integrated apertured micromirror and applications thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1206526B (de) * 1961-08-18 1965-12-09 Standard Elektrik Lorenz Ag Modulierbarer optischer Sender
JPS59115583A (ja) * 1982-12-22 1984-07-04 Sanyo Electric Co Ltd 半導体レ−ザ
JPS6032381A (ja) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd 面発光半導体レ−ザ装置
JPS60154693A (ja) * 1984-01-25 1985-08-14 Fujitsu Ltd 半導体発光装置
JPS6179280A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 面発光型半導体レ−ザ装置及びその製造方法
JPH0793473B2 (ja) * 1987-10-06 1995-10-09 古河電気工業株式会社 光半導体素子
JPS6446996A (en) * 1988-08-03 1989-02-21 Agency Ind Science Techn Method for realizing optical bistable function and optical bistable function element
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
JPH0311689A (ja) * 1989-06-08 1991-01-18 Fujikura Ltd 面発光型波長制御ｄｂｒレーザ
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser

Also Published As

Publication number Publication date
EP0465145A3 (en) 1992-07-22
JPH04233293A (ja) 1992-08-21
JP2545165B2 (ja) 1996-10-16
DE69113141T2 (de) 1996-05-09
US5056098A (en) 1991-10-08
EP0465145B1 (de) 1995-09-20
EP0465145A2 (de) 1992-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee