DE69106334T2 - Mehrsicht Film mit magnetoresistiven Effekt und magnetoresitives Element. - Google Patents
Mehrsicht Film mit magnetoresistiven Effekt und magnetoresitives Element.Info
- Publication number
- DE69106334T2 DE69106334T2 DE69106334T DE69106334T DE69106334T2 DE 69106334 T2 DE69106334 T2 DE 69106334T2 DE 69106334 T DE69106334 T DE 69106334T DE 69106334 T DE69106334 T DE 69106334T DE 69106334 T2 DE69106334 T2 DE 69106334T2
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistive
- view film
- effect
- magnetoresistive element
- magnetoresistive effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Revoked
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40102790A JPH04214207A (ja) | 1990-12-10 | 1990-12-10 | 多層磁気抵抗効果膜およびこれを用いた磁気抵抗効果素子 |
JP11012891A JPH04339309A (ja) | 1991-05-15 | 1991-05-15 | 多層磁気抵抗効果膜を用いた磁気抵抗効果素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69106334D1 DE69106334D1 (de) | 1995-02-09 |
DE69106334T2 true DE69106334T2 (de) | 1995-05-04 |
Family
ID=26449808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69106334T Revoked DE69106334T2 (de) | 1990-12-10 | 1991-12-09 | Mehrsicht Film mit magnetoresistiven Effekt und magnetoresitives Element. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5998040A (de) |
EP (1) | EP0490327B1 (de) |
DE (1) | DE69106334T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004053551A1 (de) * | 2004-11-05 | 2006-05-18 | Siemens Ag | Vorrichtung zum Erfassen eines beweglichen oder bewegbaren elektrisch und/oder magnetisch leitenden Teiles |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2693021B1 (fr) * | 1992-06-26 | 1994-08-26 | Thomson Csf | Détecteur de champ magnétique. |
JP3411626B2 (ja) * | 1992-08-27 | 2003-06-03 | ティーディーケイ株式会社 | 磁性多層膜および磁気抵抗効果素子ならびにそれらの製造方法 |
JP2725977B2 (ja) * | 1992-08-28 | 1998-03-11 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 磁気抵抗センサ及びその製造方法、磁気記憶システム |
DE4401476A1 (de) * | 1993-01-20 | 1994-07-28 | Fuji Electric Co Ltd | Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf |
US5657190A (en) * | 1993-03-02 | 1997-08-12 | Tdk Corporation | Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer |
FR2710753B1 (fr) * | 1993-09-27 | 1995-10-27 | Commissariat Energie Atomique | Capteur de courant comprenant un ruban magnétorésistif et son procédé de réalisation. |
FR2715507B1 (fr) * | 1994-01-25 | 1996-04-05 | Commissariat Energie Atomique | Magnétorésistance multicouche polarisée. |
US5825593A (en) * | 1994-02-18 | 1998-10-20 | Seagate Technology, Inc. | Electric field modulated MR sensor |
EP0675554A1 (de) * | 1994-03-24 | 1995-10-04 | Nec Corporation | Element mit magnetoresistivem Effekt |
DE4427495C2 (de) * | 1994-08-03 | 2000-04-13 | Siemens Ag | Sensoreinrichtung mit einem GMR-Sensorelement |
EP0702357B1 (de) * | 1994-09-16 | 2003-06-18 | Kabushiki Kaisha Toshiba | Magnetowiderstandeffektkopf und Magnetaufzeichnungs-/Wiedergabekopf daraus |
FR2725029A1 (fr) * | 1994-09-26 | 1996-03-29 | Crouzet Automatismes | Capteur de courant a magnetoresistance |
US6741494B2 (en) | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
US7050329B2 (en) * | 1995-04-21 | 2006-05-23 | Johnson Mark B | Magnetic spin based memory with inductive write lines |
US6219205B1 (en) * | 1995-10-10 | 2001-04-17 | Read-Rite Corporation | High density giant magnetoresistive transducer with recessed sensor |
EP0789250A3 (de) * | 1996-02-12 | 1997-10-01 | Read Rite Corp | Dünnschicht-Riesenmagnetoresistiver Wandler mit Fluxleitungsanordnung |
US6256171B1 (en) | 1996-09-30 | 2001-07-03 | Kabushiki Kaisha Toshiba | Thin film magnetic head having an improved heat dispersion and magnetic recording apparatus using the same |
JP3528511B2 (ja) * | 1997-04-14 | 2004-05-17 | 松下電器産業株式会社 | 薄膜磁気ヘッド |
JP3838469B2 (ja) * | 1998-04-20 | 2006-10-25 | Tdk株式会社 | 磁気抵抗素子の磁気特性制御方法、該素子を備えた磁気ヘッドの磁気特性制御方法、該素子を備えた磁気ヘッド装置、及び磁気ディスク装置 |
JP2000023423A (ja) * | 1998-06-30 | 2000-01-21 | Ykk Corp | ブラシレスモータ用回転角検出器及びそれを用いたブラシレスモータ |
JP2000057538A (ja) * | 1998-08-05 | 2000-02-25 | Hitachi Ltd | 磁気抵抗センサを用いた磁気ヘッドおよび磁気記録再生装置 |
US6281538B1 (en) * | 2000-03-22 | 2001-08-28 | Motorola, Inc. | Multi-layer tunneling device with a graded stoichiometry insulating layer |
US7050274B2 (en) * | 2001-03-15 | 2006-05-23 | Seagate Technology Llc | Multilayer permanent magnet films |
JP3886802B2 (ja) | 2001-03-30 | 2007-02-28 | 株式会社東芝 | 磁性体のパターニング方法、磁気記録媒体、磁気ランダムアクセスメモリ |
KR100447971B1 (ko) * | 2001-12-18 | 2004-09-10 | 주식회사 하이닉스반도체 | 다층구조의 자기장 센서 제조방법 |
US20050013059A1 (en) * | 2003-07-15 | 2005-01-20 | International Business Machines Corporation | Magnetoresistive sensor with a net magnetic moment |
TWI573301B (zh) * | 2014-05-22 | 2017-03-01 | 宇能電科技股份有限公司 | 異向性磁阻元件及其製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU485500A1 (ru) * | 1972-10-04 | 1975-09-25 | Институт Электронных Управляющих Машин | Датчик дл считывани цилиндрических магнитных доменов |
JPS5138885A (en) * | 1974-09-27 | 1976-03-31 | Fujitsu Ltd | Jikiteikososhi |
JPS5267312A (en) * | 1975-12-01 | 1977-06-03 | Nec Corp | Magnetic resistance effect head |
DE3229774A1 (de) * | 1981-08-10 | 1983-03-24 | Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka | Magnetoresistives element |
JPS60251682A (ja) * | 1984-05-29 | 1985-12-12 | Hitachi Ltd | 磁気抵抗効果型素子 |
DE3507665A1 (de) * | 1985-03-05 | 1986-09-11 | VEB Meßtechnik Mellenbach Betrieb des Kombinates VEB Elektro-Apparate-Werke Berlin-Treptow "Friedrich Ebert", DDR 6428 Mellenbach-Glasbach | Messfuehler zur erfassung von oertlichen magnetfeldern |
US4783711A (en) * | 1985-07-12 | 1988-11-08 | Hitachi, Ltd. | Magnetoresistive sensor having magnetic shields of ferrite |
DE3855322T2 (de) * | 1987-08-21 | 1996-10-10 | Nippon Denso Co | Anordnung zur Detektion von Magnetismus |
DE3820475C1 (de) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
JPH0223681A (ja) * | 1988-07-12 | 1990-01-25 | Nec Corp | 磁気抵抗効果素子 |
-
1991
- 1991-12-09 DE DE69106334T patent/DE69106334T2/de not_active Revoked
- 1991-12-09 US US07/804,013 patent/US5998040A/en not_active Expired - Fee Related
- 1991-12-09 EP EP91121114A patent/EP0490327B1/de not_active Revoked
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004053551A1 (de) * | 2004-11-05 | 2006-05-18 | Siemens Ag | Vorrichtung zum Erfassen eines beweglichen oder bewegbaren elektrisch und/oder magnetisch leitenden Teiles |
Also Published As
Publication number | Publication date |
---|---|
EP0490327A1 (de) | 1992-06-17 |
EP0490327B1 (de) | 1994-12-28 |
US5998040A (en) | 1999-12-07 |
DE69106334D1 (de) | 1995-02-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8331 | Complete revocation |