DE69031460D1 - Planarisierende Ablagerung aus Silsesquioxan-Copolymer - Google Patents

Planarisierende Ablagerung aus Silsesquioxan-Copolymer

Info

Publication number
DE69031460D1
DE69031460D1 DE69031460T DE69031460T DE69031460D1 DE 69031460 D1 DE69031460 D1 DE 69031460D1 DE 69031460 T DE69031460 T DE 69031460T DE 69031460 T DE69031460 T DE 69031460T DE 69031460 D1 DE69031460 D1 DE 69031460D1
Authority
DE
Germany
Prior art keywords
planarizing
deposit made
silsesquioxane copolymer
silsesquioxane
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031460T
Other languages
English (en)
Other versions
DE69031460T2 (de
Inventor
Harold G Linde
Rosemary A Previti-Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69031460D1 publication Critical patent/DE69031460D1/de
Publication of DE69031460T2 publication Critical patent/DE69031460T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
DE69031460T 1990-03-15 1990-10-05 Planarisierende Ablagerung aus Silsesquioxan-Copolymer Expired - Fee Related DE69031460T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/494,006 US5043789A (en) 1990-03-15 1990-03-15 Planarizing silsesquioxane copolymer coating

Publications (2)

Publication Number Publication Date
DE69031460D1 true DE69031460D1 (de) 1997-10-23
DE69031460T2 DE69031460T2 (de) 1998-03-26

Family

ID=23962616

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031460T Expired - Fee Related DE69031460T2 (de) 1990-03-15 1990-10-05 Planarisierende Ablagerung aus Silsesquioxan-Copolymer

Country Status (4)

Country Link
US (1) US5043789A (de)
EP (1) EP0447611B1 (de)
JP (1) JP2575540B2 (de)
DE (1) DE69031460T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112048226A (zh) * 2020-09-13 2020-12-08 上海普信高分子材料有限公司 一种耐酸碱氟硅丙烯酸树脂涂层及其制备方法

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JPH04233732A (ja) * 1990-08-16 1992-08-21 Motorola Inc 半導体の製造工程で使用するスピン・オン誘電体
US5194928A (en) * 1991-01-14 1993-03-16 International Business Machines Corporation Passivation of metal in metal/polyimide structure
US5492730A (en) * 1992-12-28 1996-02-20 Aluminum Company Of America Siloxane coating process for metal or ceramic substrates
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
US5484867A (en) * 1993-08-12 1996-01-16 The University Of Dayton Process for preparation of polyhedral oligomeric silsesquioxanes and systhesis of polymers containing polyhedral oligomeric silsesqioxane group segments
US5412053A (en) * 1993-08-12 1995-05-02 The University Of Dayton Polymers containing alternating silsesquioxane and bridging group segments and process for their preparation
US5438022A (en) 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
CN1125481A (zh) * 1994-03-11 1996-06-26 川崎制铁株式会社 评价用于形成绝缘膜的硅氧烷的方法、形成绝缘膜的涂布液及其制备方法、半导体器件用绝缘膜成型方法以及采用绝缘膜成膜法制备半导体器件的方法
US5456952A (en) * 1994-05-17 1995-10-10 Lsi Logic Corporation Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
DE69535718T2 (de) * 1994-05-27 2009-03-19 Texas Instruments Inc., Dallas Verbindungsverfahren mit Benutzung eines porösen Isolators zur Reduzierung der Kapazitäten zwischen Leiterbahnen
US5527737A (en) * 1994-05-27 1996-06-18 Texas Instruments Incorporated Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction
US5527562A (en) * 1994-10-21 1996-06-18 Aluminum Company Of America Siloxane coatings for aluminum reflectors
US5534731A (en) * 1994-10-28 1996-07-09 Advanced Micro Devices, Incorporated Layered low dielectric constant technology
KR0179838B1 (ko) * 1995-09-02 1999-04-15 문정환 반도체 소자의 절연막 구조 및 절연막 평탄화 방법
US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
WO2000077575A1 (en) * 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US6569932B2 (en) 2001-07-06 2003-05-27 Benjamin S. Hsiao Blends of organic silicon compounds with ethylene-based polymers
US7423166B2 (en) * 2001-12-13 2008-09-09 Advanced Technology Materials, Inc. Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
US7456488B2 (en) * 2002-11-21 2008-11-25 Advanced Technology Materials, Inc. Porogen material
US7108771B2 (en) * 2001-12-13 2006-09-19 Advanced Technology Materials, Inc. Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
WO2005017058A1 (en) 2003-08-01 2005-02-24 Dow Corning Corporation Silicone based dielectric coatings and films for photovoltaic applications
WO2005037907A1 (en) * 2003-10-07 2005-04-28 Honeywell International Inc. Coatings and hard mask compositions for integrated circuit applications, methods of production and uses thereof
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US8053375B1 (en) 2006-11-03 2011-11-08 Advanced Technology Materials, Inc. Super-dry reagent compositions for formation of ultra low k films
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR20120046532A (ko) * 2010-11-02 2012-05-10 한국생명공학연구원 항생물부착성 ｓｓｑ／ｐｅｇ 네트워크 및 그 제조방법
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US10138381B2 (en) 2012-05-10 2018-11-27 Burning Bush Group, Llc High performance silicon based thermal coating compositions
CN107236453B (zh) 2012-07-03 2019-06-11 伯宁布什集团有限公司 硅基高性能涂料组合物
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen
US10787386B2 (en) 2015-09-02 2020-09-29 Corning Incorporated Antimicrobial-antireflective articles and methods for making the same
US10544330B2 (en) * 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials

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US276597A (en) * 1883-05-01 Stove-pipe thimble and flue-stopper
US4349609A (en) * 1979-06-21 1982-09-14 Fujitsu Limited Electronic device having multilayer wiring structure
US4222792A (en) * 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
US4480009A (en) * 1980-12-15 1984-10-30 M&T Chemicals Inc. Siloxane-containing polymers
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden
US4564562A (en) * 1984-05-29 1986-01-14 At&T Technologies, Inc. Silicone encapsulated devices
US4670299A (en) * 1984-11-01 1987-06-02 Fujitsu Limited Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
US4801507A (en) * 1987-07-02 1989-01-31 Akzo American Inc. Arylsiloxane/silicate compositions useful as interlayer dielectric films
US4981530A (en) * 1988-11-28 1991-01-01 International Business Machines Corporation Planarizing ladder-type silsesquioxane polymer insulation layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112048226A (zh) * 2020-09-13 2020-12-08 上海普信高分子材料有限公司 一种耐酸碱氟硅丙烯酸树脂涂层及其制备方法
CN112048226B (zh) * 2020-09-13 2021-09-03 上海普信高分子材料有限公司 一种耐酸碱氟硅丙烯酸树脂涂层及其制备方法

Also Published As

Publication number Publication date
JP2575540B2 (ja) 1997-01-29
EP0447611B1 (de) 1997-09-17
EP0447611A3 (en) 1991-10-16
US5043789A (en) 1991-08-27
DE69031460T2 (de) 1998-03-26
JPH07258607A (ja) 1995-10-09
EP0447611A2 (de) 1991-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee