DE69029027T2 - Verfahren und Gerät zum Einschätzen der Ioneneinpflanzungsdosierungshöhen und Halbleitern - Google Patents

Verfahren und Gerät zum Einschätzen der Ioneneinpflanzungsdosierungshöhen und Halbleitern

Info

Publication number
DE69029027T2
DE69029027T2 DE69029027T DE69029027T DE69029027T2 DE 69029027 T2 DE69029027 T2 DE 69029027T2 DE 69029027 T DE69029027 T DE 69029027T DE 69029027 T DE69029027 T DE 69029027T DE 69029027 T2 DE69029027 T2 DE 69029027T2
Authority
DE
Germany
Prior art keywords
semiconductors
ion implantation
dosage levels
implantation dosage
estimating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029027T
Other languages
English (en)
Other versions
DE69029027D1 (de
Inventor
Jon Opsal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Therma Wave Inc
Original Assignee
Therma Wave Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Therma Wave Inc filed Critical Therma Wave Inc
Publication of DE69029027D1 publication Critical patent/DE69029027D1/de
Application granted granted Critical
Publication of DE69029027T2 publication Critical patent/DE69029027T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1702—Systems in which incident light is modified in accordance with the properties of the material investigated with opto-acoustic detection, e.g. for gases or analysing solids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9505—Wafer internal defects, e.g. microcracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
DE69029027T 1989-12-12 1990-12-05 Verfahren und Gerät zum Einschätzen der Ioneneinpflanzungsdosierungshöhen und Halbleitern Expired - Fee Related DE69029027T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/448,882 US5074669A (en) 1989-12-12 1989-12-12 Method and apparatus for evaluating ion implant dosage levels in semiconductors

Publications (2)

Publication Number Publication Date
DE69029027D1 DE69029027D1 (de) 1996-12-05
DE69029027T2 true DE69029027T2 (de) 1997-05-28

Family

ID=23782020

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029027T Expired - Fee Related DE69029027T2 (de) 1989-12-12 1990-12-05 Verfahren und Gerät zum Einschätzen der Ioneneinpflanzungsdosierungshöhen und Halbleitern

Country Status (4)

Country Link
US (1) US5074669A (de)
EP (1) EP0432963B1 (de)
JP (1) JPH06101505B2 (de)
DE (1) DE69029027T2 (de)

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US6323951B1 (en) 1999-03-22 2001-11-27 Boxer Cross Incorporated Apparatus and method for determining the active dopant profile in a semiconductor wafer
US6268916B1 (en) * 1999-05-11 2001-07-31 Kla-Tencor Corporation System for non-destructive measurement of samples
US6317216B1 (en) 1999-12-13 2001-11-13 Brown University Research Foundation Optical method for the determination of grain orientation in films
EP1251348A4 (de) * 2000-01-28 2005-01-12 Asahi Chemical Ind Spektroskopischer analysator mit photothermischer wandlung
US6535285B1 (en) * 2000-02-08 2003-03-18 Therma-Wave, Inc. Combination thermal wave and optical spectroscopy measurement system
US6812047B1 (en) * 2000-03-08 2004-11-02 Boxer Cross, Inc. Evaluating a geometric or material property of a multilayered structure
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US7106425B1 (en) 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6919957B2 (en) 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
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US6806951B2 (en) 2000-09-20 2004-10-19 Kla-Tencor Technologies Corp. Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen
US7130029B2 (en) 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6812045B1 (en) 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6911349B2 (en) * 2001-02-16 2005-06-28 Boxer Cross Inc. Evaluating sidewall coverage in a semiconductor wafer
US6812717B2 (en) * 2001-03-05 2004-11-02 Boxer Cross, Inc Use of a coefficient of a power curve to evaluate a semiconductor wafer
US6940592B2 (en) * 2001-10-09 2005-09-06 Applied Materials, Inc. Calibration as well as measurement on the same workpiece during fabrication
US6971791B2 (en) * 2002-03-01 2005-12-06 Boxer Cross, Inc Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough
US6958814B2 (en) * 2002-03-01 2005-10-25 Applied Materials, Inc. Apparatus and method for measuring a property of a layer in a multilayered structure
US6989899B2 (en) * 2002-03-18 2006-01-24 Therma-Wave, Inc. Ion implant monitoring through measurement of modulated optical response
US6825933B2 (en) 2002-06-07 2004-11-30 N&K Technology, Inc. Computer-implemented reflectance system and method for non-destructive low dose ion implantation monitoring
US7106446B2 (en) * 2002-06-21 2006-09-12 Therma-Wave, Inc. Modulated reflectance measurement system with multiple wavelengths
US6963393B2 (en) * 2002-09-23 2005-11-08 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US7126690B2 (en) 2002-09-23 2006-10-24 Therma-Wave, Inc. Modulated reflectance measurement system using UV probe
WO2004048943A1 (en) * 2002-11-27 2004-06-10 Optical Metrology Patents Limited An optical spectrometer
FR2849195B1 (fr) * 2002-12-20 2005-01-21 Commissariat Energie Atomique Biocapteur a substrat quelconque pouvant etre caracterise en deflexion photothermique
KR100538092B1 (ko) * 2003-02-27 2005-12-21 삼성전자주식회사 불순물 농도의 수직 분포 모니터링 방법 및 장치
US7075058B2 (en) * 2003-03-28 2006-07-11 The United States Of America As Represented By The United States Department Of Energy Photothermal imaging scanning microscopy
US20040253751A1 (en) * 2003-06-16 2004-12-16 Alex Salnik Photothermal ultra-shallow junction monitoring system with UV pump
US7212288B2 (en) * 2003-08-14 2007-05-01 Therma-Wave, Inc. Position modulated optical reflectance measurement system for semiconductor metrology
US7280215B2 (en) * 2003-09-24 2007-10-09 Therma-Wave, Inc. Photothermal system with spectroscopic pump and probe
US7045798B2 (en) * 2004-02-20 2006-05-16 Applied Materials, Inc. Characterizing an electron beam treatment apparatus
US7026175B2 (en) * 2004-03-29 2006-04-11 Applied Materials, Inc. High throughput measurement of via defects in interconnects
US7029933B2 (en) * 2004-06-22 2006-04-18 Tech Semiconductor Singapore Pte. Ltd. Method for monitoring ion implant doses
US7379185B2 (en) 2004-11-01 2008-05-27 Applied Materials, Inc. Evaluation of openings in a dielectric layer
US7499168B2 (en) * 2006-02-14 2009-03-03 Kla-Tencor Corp. Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
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US20080074668A1 (en) * 2006-09-21 2008-03-27 Alex Salnik Modulated optical reflectance measurement system with enhanced sensitivity
US7705977B2 (en) * 2006-12-21 2010-04-27 Kla-Tencor Corporation Methods for depth profiling in semiconductors using modulated optical reflectance technology
US7755752B1 (en) 2008-04-07 2010-07-13 Kla-Tencor Corporation Combined modulated optical reflectance and photoreflectance system
US7660686B1 (en) 2008-04-07 2010-02-09 Kla-Tencor Corporation Ion implant metrology system with fault detection and identification
US7920265B1 (en) * 2008-07-29 2011-04-05 Kla-Tencor Corporation Apparatus and method for noise reduction in modulated optical reflectance metrology system
US8535957B1 (en) * 2010-06-30 2013-09-17 Kla-Tencor Corporation Dopant metrology with information feedforward and feedback
US9772297B2 (en) * 2014-02-12 2017-09-26 Kla-Tencor Corporation Apparatus and methods for combined brightfield, darkfield, and photothermal inspection
US9746310B2 (en) * 2015-11-06 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Metrology system and measurement method using the same
DE102021127596A1 (de) 2021-10-22 2023-04-27 Linseis Messgeräte Gesellschaft mit beschränkter Haftung Temperaturleitfähigkeitsmessgerät

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US4755049A (en) * 1986-12-02 1988-07-05 Ford Motor Company Method and apparatus for measuring the ion implant dosage in a semiconductor crystal

Also Published As

Publication number Publication date
EP0432963B1 (de) 1996-10-30
DE69029027D1 (de) 1996-12-05
EP0432963A2 (de) 1991-06-19
US5074669A (en) 1991-12-24
EP0432963A3 (en) 1992-06-03
JPH03252152A (ja) 1991-11-11
JPH06101505B2 (ja) 1994-12-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee