DE69028397D1 - Verfahren zur herstellung einer halbleitervorrichtung - Google Patents

Verfahren zur herstellung einer halbleitervorrichtung

Info

Publication number
DE69028397D1
DE69028397D1 DE69028397T DE69028397T DE69028397D1 DE 69028397 D1 DE69028397 D1 DE 69028397D1 DE 69028397 T DE69028397 T DE 69028397T DE 69028397 T DE69028397 T DE 69028397T DE 69028397 D1 DE69028397 D1 DE 69028397D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028397T
Other languages
English (en)
Other versions
DE69028397T2 (de
Inventor
Hiroki Hozumi
Shinichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69028397D1 publication Critical patent/DE69028397D1/de
Application granted granted Critical
Publication of DE69028397T2 publication Critical patent/DE69028397T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere
DE69028397T 1989-12-26 1990-12-26 Verfahren zur herstellung einer halbleitervorrichtung Expired - Fee Related DE69028397T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01337007A JP3082923B2 (ja) 1989-12-26 1989-12-26 半導体装置の製法
PCT/JP1990/001698 WO1991010262A1 (en) 1989-12-26 1990-12-26 Method of manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
DE69028397D1 true DE69028397D1 (de) 1996-10-10
DE69028397T2 DE69028397T2 (de) 1997-04-10

Family

ID=18304603

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028397T Expired - Fee Related DE69028397T2 (de) 1989-12-26 1990-12-26 Verfahren zur herstellung einer halbleitervorrichtung

Country Status (5)

Country Link
US (1) US5356825A (de)
EP (1) EP0463174B1 (de)
JP (2) JP3082923B2 (de)
DE (1) DE69028397T2 (de)
WO (1) WO1991010262A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374833A (en) * 1990-03-05 1994-12-20 Vlsi Technology, Inc. Structure for suppression of field inversion caused by charge build-up in the dielectric
JP2748070B2 (ja) * 1992-05-20 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH0846139A (ja) * 1994-05-06 1996-02-16 Texas Instr Inc <Ti> ポリシリコン抵抗器とその作成法
US5646057A (en) * 1994-07-25 1997-07-08 Taiwan Semiconductor Manufacturing Company Method for a MOS device manufacturing
US5872381A (en) * 1996-05-23 1999-02-16 Sony Corporation Semiconductor device and its manufacturing method
KR100553615B1 (ko) * 1997-01-31 2007-04-11 산요덴키가부시키가이샤 반도체소자의제조방법
US5966624A (en) * 1997-07-29 1999-10-12 Siemens Aktiengesellschaft Method of manufacturing a semiconductor structure having a crystalline layer
US6100153A (en) * 1998-01-20 2000-08-08 International Business Machines Corporation Reliable diffusion resistor and diffusion capacitor
JPH11330385A (ja) * 1998-05-20 1999-11-30 Mitsumi Electric Co Ltd Ｃｍｏｓデバイス
GB2342776B (en) * 1998-07-06 2000-12-20 United Microelectronics Corp Method of fabricating resistors in integrated circuits
TW409419B (en) 1998-07-06 2000-10-21 United Microelectronics Corp Manufacture method of integrated circuit resistor
US6140198A (en) * 1998-11-06 2000-10-31 United Microelectronics Corp. Method of fabricating load resistor
JP3449535B2 (ja) * 1999-04-22 2003-09-22 ソニー株式会社 半導体素子の製造方法
JP2001217317A (ja) * 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
US8679936B1 (en) * 2005-05-26 2014-03-25 National Semiconductor Corporation Manufacturing resistors with tightened resistivity distribution in semiconductor integrated circuits
US9634081B2 (en) * 2013-10-08 2017-04-25 Infineon Technologies Ag Methods for producing polysilicon resistors
JP6267987B2 (ja) * 2014-02-13 2018-01-24 エスアイアイ・セミコンダクタ株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444880A (en) * 1977-09-16 1979-04-09 Nec Corp Manufacture of semiconductor device
JPS558026A (en) * 1978-06-30 1980-01-21 Matsushita Electric Ind Co Ltd Semi-conductor device manufacturing method
FR2534415A1 (fr) * 1982-10-07 1984-04-13 Cii Honeywell Bull Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant
JPS60109260A (ja) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 補償された多結晶シリコン抵抗素子
JPS6196756A (ja) * 1984-10-17 1986-05-15 Nec Corp 半導体装置及びその製造方法
JPS6196755A (ja) * 1984-10-17 1986-05-15 Nec Corp 半導体装置及びその製造方法
JPS61220452A (ja) * 1985-03-27 1986-09-30 Nec Corp 半導体装置の製造方法
JPS63151064A (ja) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS63155755A (ja) * 1986-12-19 1988-06-28 Sony Corp 半導体装置の製造方法
US4762801A (en) * 1987-02-20 1988-08-09 National Semiconductor Corporation Method of fabricating polycrystalline silicon resistors having desired temperature coefficients
JPS63248157A (ja) * 1987-04-02 1988-10-14 Nec Corp 半導体装置の製造方法
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법

Also Published As

Publication number Publication date
EP0463174A1 (de) 1992-01-02
JP3082923B2 (ja) 2000-09-04
JPH03196668A (ja) 1991-08-28
EP0463174B1 (de) 1996-09-04
EP0463174A4 (en) 1992-04-15
JPH1197451A (ja) 1999-04-09
DE69028397T2 (de) 1997-04-10
US5356825A (en) 1994-10-18
WO1991010262A1 (en) 1991-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee